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1. 发明申请

US20050117619A1 Semiconductor laser device and method of manufacturing the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050117619A1
公开(公告)日：2005-06-02
申请号：US10994436
申请日：2004-11-23
申请人： Kouji Makita , Kenji Yoshikawa , Takayuki Kashima , Hideto Adachi
发明人： Kouji Makita , Kenji Yoshikawa , Takayuki Kashima , Hideto Adachi
IPC分类号： H01S5/30 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/323
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/222 , H01S5/32325
摘要： The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; an n-type AlInP block layer 109, has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.
摘要翻译：本发明旨在提供一种具有容易制造，令人满意的温度特性以及高速响应特性的结构的半导体激光器件，它包括：n型GaAs衬底101; 形成在n型GaAs衬底101上的n型AlGaInP包层102; 非掺杂量子阱有源层103; p型AlGaInP第一包覆层104; p型GaInP蚀刻停止层105; p型AlGaInP第二包覆层106; p型GaInP覆盖层107; p型GaAs接触层108; n型AlInP阻挡层109具有形成在脊部两侧的脊部和凸部，并且p型GaAs接触层108仅形成在脊部上。

2. 发明授权

US07139298B2 Semiconductor laser device and method of manufacturing the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07139298B2
公开(公告)日：2006-11-21
申请号：US10994436
申请日：2004-11-23
申请人： Kouji Makita , Kenji Yoshikawa , Takayuki Kashima , Hideto Adachi
发明人： Kouji Makita , Kenji Yoshikawa , Takayuki Kashima , Hideto Adachi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/222 , H01S5/32325
摘要： The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; and an n-type AlInP block layer 109. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.
摘要翻译：本发明的目的在于提供一种具有易于制造，令人满意的温度特性以及高速响应特性的结构的半导体激光器件。该器件包括：n型GaAs衬底101; 形成在n型GaAs衬底101上的n型AlGaInP包层102; 非掺杂量子阱有源层103; p型AlGaInP第一包覆层104; p型GaInP蚀刻停止层105; p型AlGaInP第二包覆层106; p型GaInP覆盖层107; p型GaAs接触层108; 和n型AlInP阻挡层109。该装置具有形成在脊部两侧的脊部和凸部，仅在脊部形成p型GaAs接触层108。

3. 发明申请

US20070237199A1 Semiconductor laser device and manufacturing method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070237199A1
公开(公告)日：2007-10-11
申请号：US11390426
申请日：2006-03-28
申请人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
发明人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/0425 , H01S5/22 , H01S5/34313 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element 110 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate 101. Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements 110 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.
摘要翻译：在能够实现高功率输出的单片双激光半导体激光器件中，通过共同的步骤形成每个激光元件的窗口结构，从而提高器件的可靠性。半导体激光装置具有红外激光元件110和单片集成在n型半导体基板101上的红色激光元件120。红外线和红色激光元件110和120中的每一个具有脊状波导和在每个谐振器面处由Zn扩散形成的窗口结构。红外线和红色激光元件110和120在相应波导的脊上包括p型接触层109和119。 p型接触层109比p型接触层119薄。

4. 发明申请

US20090080483A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20090080483A1
公开(公告)日：2009-03-26
申请号：US12166688
申请日：2008-07-02
申请人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
发明人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
IPC分类号： H01S5/42 , H01S5/00 , H01L21/02
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/22 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/173
摘要： A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.
摘要翻译：半导体激光装置包括第一半导体激光元件和第二半导体激光元件。第一半导体激光元件具有第一端面窗结构，该第一端面窗结构是包括在端面附近形成的第一杂质的区域，第二半导体激光元件具有第二端面窗结构，该第二端面窗结构是包括形成在端面附近的第二杂质的区域。从第一有源层的下端到第一端面窗结构的下端的距离比从第二活性层的下端到第二端面窗结构的下端的距离短。

5. 发明授权

US07633987B2 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07633987B2
公开(公告)日：2009-12-15
申请号：US12166688
申请日：2008-07-02
申请人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
发明人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/22 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/173
摘要： A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.
摘要翻译：半导体激光装置包括第一半导体激光元件和第二半导体激光元件。第一半导体激光元件具有第一端面窗结构，该第一端面窗结构是包括在端面附近形成的第一杂质的区域，第二半导体激光元件具有第二端面窗结构，该第二端面窗结构是包括形成在端面附近的第二杂质的区域。从第一有源层的下端到第一端面窗结构的下端的距离比从第二活性层的下端到第二端面窗结构的下端的距离短。

6. 发明授权

US07505502B2 Semiconductor laser device and manufacturing method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07505502B2
公开(公告)日：2009-03-17
申请号：US11390426
申请日：2006-03-28
申请人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
发明人： Takayuki Kashima , Kouji Makita , Kenji Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/0425 , H01S5/22 , H01S5/34313 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element li0 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate i01. Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements ii0 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.
摘要翻译：在能够实现高功率输出的单片双激光半导体激光器件中，通过共同的步骤形成每个激光元件的窗口结构，从而提高器件的可靠性。半导体激光器件具有单片集成在n型半导体衬底i01上的红外激光元件li0和红色激光元件120。红外线和红色激光元件110和120中的每一个具有脊状波导和在每个谐振器面处由Zn扩散形成的窗口结构。红外和红色激光元件ii0和120包括在各个波导的脊上的p型接触层109和119。 p型接触层109比p型接触层119薄。

7. 发明授权

US07585689B2 Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar 失效
标题翻译：半导体激光器件的制造方法及半导体激光棒的检查方法
公开(公告)号：US07585689B2
公开(公告)日：2009-09-08
申请号：US12196902
申请日：2008-08-22
申请人： Takayuki Kashima , Keiji Ito , Kouji Makita
发明人： Takayuki Kashima , Keiji Ito , Kouji Makita
IPC分类号： H01L21/00
CPC分类号： H01S5/4025 , H01S5/0201 , H01S5/2201
摘要： A method for manufacturing a semiconductor laser device in which a first conductivity type cladding layer, and active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth, the second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of a resonator length is within the tolerance in a simple manner.
摘要翻译：一种半导体激光器件的制造方法，其中通过晶体生长在半导体衬底上依次层叠第一导电型包覆层和有源层，第二导电型第一包层和第二导电型第二包覆层，将第二导电型第二包覆层加工成多个条状的脊状结构部，通过在与脊部结构部的长度方向正交的方向上断裂而形成激光条。根据该方法，可以提供一种制造半导体激光器件的方法和用于在制造过程中检查半导体激光棒的方法，其能够确定每个芯片是否谐振器长度的偏差是否在容忍以简单的方式。

8. 发明授权

US07809042B2 Two-wavelength semiconductor laser device and its fabricating method 有权
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：US07809042B2
公开(公告)日：2010-10-05
申请号：US12269583
申请日：2008-11-12
申请人： Kouji Makita , Takayuki Kashima
发明人： Kouji Makita , Takayuki Kashima
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/2004 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/185
摘要： A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.
摘要翻译：双波长半导体激光器件包括：第一半导体激光器件，包括第一导电型第一包层，由AlGaAs混晶构成的第一引导层;具有由AlGaAs混晶构成的阻挡层的第一量子阱有源层; 由AlGaAs混晶构成的第二引导层和第二导电型第二覆层，以及包括第一导电型第三覆层，由AlGaInP混晶构成的第三引导层的第二半导体激光器件，第二量子阱活性具有由AlGaInP混晶构成的阻挡层的层，由AlGaInP混晶构成的第四引导层和第二导电型第四覆层。至少包含在第一量子阱活性层，第一引导层和第二引导层中的阻挡层各自具有大于0.47和0.60或更小的Al摩尔比。

9. 发明申请

US20090180508A1 TWO-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND ITS FABRICATING METHOD 有权
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：US20090180508A1
公开(公告)日：2009-07-16
申请号：US12269583
申请日：2008-11-12
申请人： Kouji MAKITA , Takayuki Kashima
发明人： Kouji MAKITA , Takayuki Kashima
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/162 , H01S5/2004 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/185
摘要： A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.
摘要翻译：双波长半导体激光器件包括：第一半导体激光器件，包括第一导电型第一包层，由AlGaAs混晶构成的第一引导层;具有由AlGaAs混晶构成的阻挡层的第一量子阱有源层; 由AlGaAs混晶构成的第二引导层和第二导电型第二覆层，以及包括第一导电型第三覆层，由AlGaInP混晶构成的第三引导层的第二半导体激光器件，第二量子阱活性具有由AlGaInP混晶构成的阻挡层的层，由AlGaInP混晶构成的第四引导层和第二导电型第四覆层。至少包含在第一量子阱活性层，第一引导层和第二引导层中的阻挡层各自具有大于0.47和0.60或更小的Al摩尔比。

10. 发明授权

US07852898B2 Semiconductor laser device and method for manufacturing the same 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07852898B2
公开(公告)日：2010-12-14
申请号：US12235320
申请日：2008-09-22
申请人： Takeshi Yokoyama , Takayuki Kashima , Kouji Makita
发明人： Takeshi Yokoyama , Takayuki Kashima , Kouji Makita
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/028 , H01S5/0281 , H01S5/32316 , H01S5/34313 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.
摘要翻译：在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。

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