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1. 发明授权

US08178893B2 Semiconductor element mounting substrate, semiconductor device using the same, and method for manufacturing semiconductor element mounting substrate 有权
标题翻译：半导体元件安装基板，使用该半导体元件安装基板的半导体装置及其制造方法
公开(公告)号：US08178893B2
公开(公告)日：2012-05-15
申请号：US12087214
申请日：2006-12-21
申请人： Kouichi Takashima , Hideaki Morigami , Masashi Narita
发明人： Kouichi Takashima , Hideaki Morigami , Masashi Narita
IPC分类号： H01L33/64
CPC分类号： H01L24/27 , H01L23/14 , H01L23/3732 , H01L24/29 , H01L24/31 , H01L24/83 , H01L2224/2908 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/83801 , H01L2224/83805 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01S5/0213 , H01S5/02484 , H01L2924/01014 , H01L2924/00 , H01L2924/3512 , H01L2224/29144 , H01L2924/00012 , H01L2924/00014
摘要： The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10 μm to 40 μm and a surface-direction diametrical size of 10 μm to 3 mm is 50/cm2 or less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1 μm to 30 μm, an arithmetic mean roughness Ra of a roughness curve showing a surface roughness of Ra≦2 μm, and a maximum height roughness Rz of Rz≦15 μm, and fills and covers the recesses or protrusions, is formed.
摘要翻译：本发明提供了一种半导体元件安装基板，其通过提高基板与另一构件之间的热传导效率，可以可靠地防止例如半导体激光器等发光元件通过发热引起不良操作本身，充分利用金刚石复合材料的高导热性。在半导体元件安装基板中，与发光元件等连接的连接面被完成，使得每单位面积的至少一个深度或高度为10μm〜40μm的凹部或突起的数量 10μm至3mm的面方向直径尺寸为50 / cm 2以下，在连接面上，由焊料或钎焊材料形成的涂层的厚度为1μm〜30μm 形成表示粗糙度曲线的算术平均粗糙度Ra，表示粗糙度Ra＆lt; 1lE;2μm，最大高度粗糙度Rz为Rz＆lt; 1lE;15μm，填充并覆盖凹部或突起。

2. 发明申请

US20090057705A1 Semiconductor Element Mounting Substrate, Semiconductor Device Using the Same, and Method for Manufacturing Semiconductor Element Mounting Substrate 有权
标题翻译：半导体元件安装基板，使用其的半导体器件以及半导体元件安装基板的制造方法
公开(公告)号：US20090057705A1
公开(公告)日：2009-03-05
申请号：US12087214
申请日：2006-12-21
申请人： Kouichi Takashima , Hideaki Morigami , Masashi Narita
发明人： Kouichi Takashima , Hideaki Morigami , Masashi Narita
IPC分类号： H01L23/488 , H01L33/00 , H01L21/768
CPC分类号： H01L24/27 , H01L23/14 , H01L23/3732 , H01L24/29 , H01L24/31 , H01L24/83 , H01L2224/2908 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/83801 , H01L2224/83805 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01S5/0213 , H01S5/02484 , H01L2924/01014 , H01L2924/00 , H01L2924/3512 , H01L2224/29144 , H01L2924/00012 , H01L2924/00014
摘要： The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10 μm to 40 μm and a surface-direction diametrical size of 10 μm to 3 mm is 50/cm2 or less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1 μm to 30 μm, an arithmetic mean roughness Ra of a roughness curve showing a surface roughness of Ra≦2 μm, and a maximum height roughness Rz of Rz≦15 μm, and fills and covers the recesses or protrusions, is formed.
摘要翻译：本发明提供了一种半导体元件安装基板，其通过提高基板与另一构件之间的热传导效率，可以可靠地防止例如半导体激光器等发光元件通过发热引起不良操作本身，充分利用金刚石复合材料的高导热性。在半导体元件安装基板中，与发光元件等连接的连接表面被完成，使得每单位面积的至少一个具有10μm至40μm的深度或高度的凹部或突起的数量 10um〜3mm的表面方向直径尺寸为50 / cm 2以下，在连接面上，由焊料或钎焊材料形成的涂层的厚度为1〜30μm 形成表示粗糙度Ra <=2μm的粗糙度曲线和Rz <=15μm的最大高度粗糙度Rz的算术平均粗糙度Ra，并且填充和覆盖凹部或突起。

3. 发明申请

US20080157347A1 Heat spreader and semiconductor device using the same 有权
标题翻译：散热器和使用相同的半导体器件
公开(公告)号：US20080157347A1
公开(公告)日：2008-07-03
申请号：US12005312
申请日：2007-12-27
申请人： Kouichi Takashima
发明人： Kouichi Takashima
IPC分类号： H01L23/36
CPC分类号： H01S5/02492 , H01L23/36 , H01L2924/0002 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02469 , H01L2924/00
摘要： The present invention provides a heat spreader 1 which includes a substrate 7 composed of a metal-containing material and in which a second-component connection surface 6 of the substrate 7 is provided with wettability with a solder and a solder block layer 14 is formed in at least one of respective regions, adjacent to each other, of the second-component connection surface 6 and a side surface 13. When a semiconductor device 4 is manufactured by connecting a semiconductor laser 2 to the element connection surface 5 through an element connecting layer 8, and then connecting a heat sink 3 to the second-component connection surface 6 through a second-component connecting layer 9 having a melting point lower than that of the element connecting layer 8, the semiconductor block layer 14 can inhibit the melted solder from creeping up along the side surface 13, which can prevent defects that the solder that has crept up short-circuits the semiconductor laser 2 and blocks a luminous flux of laser light emitted from an emission surface 12 of the semiconductor laser 2.
摘要翻译：本发明提供一种散热器1，其包括由含金属材料构成的基板7，并且其中基板7的第二部件连接表面6与焊料具有润湿性，并且在其中形成焊料阻挡层14 第二部件连接表面6和侧表面13彼此相邻的各个区域中的至少一个。当通过元件连接层将半导体激光器2连接到元件连接表面5来制造半导体器件4时然后，如图8所示，然后通过具有低于元件连接层8的熔点的第二部件连接层9将散热器3连接到第二部件连接表面6，半导体阻挡层14可以抑制熔化的焊料从沿着侧表面13爬行，这可以防止已经起伏的焊料短路半导体激光器2并阻挡1a的光通量的缺陷从半导体激光器2的发射表面12发射的光。

4. 发明授权

US4935175A Mold cleaning composition, sheet for cleaning mold, and method for cleaning mold using said cleaning sheet 失效
标题翻译：模具清洗组合物，清洁模具用片材以及使用所述清洁片材清洁模具的方法
公开(公告)号：US4935175A
公开(公告)日：1990-06-19
申请号：US131791
申请日：1987-12-11
申请人： Toshihiko Kitaura , Akio Nakamura , Masayuki Sakamoto , Kouichi Takashima , Kiyotaka Hirakawa , Matao Mizota
发明人： Toshihiko Kitaura , Akio Nakamura , Masayuki Sakamoto , Kouichi Takashima , Kiyotaka Hirakawa , Matao Mizota
IPC分类号： B08B1/00 , B29C33/72 , C08K5/3445 , H01L21/56
CPC分类号： B08B1/00 , B29C33/72 , C08K5/3445 , H01L21/565 , H01L2924/0002
摘要： A mold-cleaning composition and sheet comprising an uncured rubber composition comprising an uncured rubber and a curing agent, and at least one removal aid selected from imidazoles and imidazolines, and a method for cleaning a mold using the mold-cleaning sheet, are disclosed. The mold-cleaining sheet is suitably used to clean molding surfaces of a mold or to remove contaminants such as burr formed at peripheries thereof in the continuous production of semiconductor devices by transfer molding.
摘要翻译：公开了一种模具清洁组合物和片材，其包含未固化的橡胶组合物，其包含未固化的橡胶和固化剂，以及至少一种选自咪唑和咪唑啉的去除助剂，以及使用该模具清洁片清洁模具的方法。脱模板适合用于清洁模具的模制表面或通过传递模塑连续生产半导体器件，去除其外围形成的毛刺等污染物。

5. 发明授权

US07768120B2 Heat spreader and semiconductor device using the same 有权
标题翻译：散热器和使用相同的半导体器件
公开(公告)号：US07768120B2
公开(公告)日：2010-08-03
申请号：US12005312
申请日：2007-12-27
申请人： Kouichi Takashima
发明人： Kouichi Takashima
IPC分类号： H01L23/34 , H01L23/10
CPC分类号： H01S5/02492 , H01L23/36 , H01L2924/0002 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02469 , H01L2924/00
摘要： The present invention provides a heat spreader 1 which includes a substrate 7 composed of a metal-containing material and in which a second-component connection surface 6 of the substrate 7 is provided with wettability with a solder and a solder block layer 14 is formed in at least one of respective regions, adjacent to each other, of the second-component connection surface 6 and a side surface 13. When a semiconductor device 4 is manufactured by connecting a semiconductor laser 2 to the element connection surface 5 through an element connecting layer 8, and then connecting a heat sink 3 to the second-component connection surface 6 through a second-component connecting layer 9 having a melting point lower than that of the element connecting layer 8, the semiconductor block layer 14 can inhibit the melted solder from creeping up along the side surface 13, which can prevent defects that the solder that has crept up short-circuits the semiconductor laser 2 and blocks a luminous flux of laser light emitted from an emission surface 12 of the semiconductor laser 2.
摘要翻译：本发明提供一种散热器1，其包括由含金属材料构成的基板7，并且其中基板7的第二部件连接表面6与焊料具有润湿性，并且在其中形成焊料阻挡层14 第二部件连接表面6和侧表面13彼此相邻的各个区域中的至少一个。当通过元件连接层将半导体激光器2连接到元件连接表面5来制造半导体器件4时然后，如图8所示，然后通过具有低于元件连接层8的熔点的第二部件连接层9将散热器3连接到第二部件连接表面6，半导体阻挡层14可以抑制熔化的焊料从沿着侧表面13爬行，这可以防止已经起伏的焊料短路半导体激光器2并阻挡1a的光通量的缺陷从半导体激光器2的发射表面12发射的光。

6. 发明申请

US20080298024A1 Heat spreader and method for manufacturing the same, and semiconductor device 审中-公开
标题翻译：散热器及其制造方法及半导体器件
公开(公告)号：US20080298024A1
公开(公告)日：2008-12-04
申请号：US12155228
申请日：2008-05-30
申请人： Kouichi Takashima , Shin-ichi Yamagata , Osamu Suwata
发明人： Kouichi Takashima , Shin-ichi Yamagata , Osamu Suwata
IPC分类号： H05K7/20 , B21C37/00 , B05D5/12
CPC分类号： H01L23/42 , H01L23/3732 , H01L23/3735 , H01L2224/16 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/16152 , Y10T428/12438 , H01L2224/0401
摘要： On a connection surface 2 of a base substrate 1 composed of a material including Cu, a heat spreader includes a Ni plating layer 3 having a high Cu region 5 where the content of Cu is not less than 1% by mass, in a range of not more than 2 μm in the thickness direction from an interface with a base substrate 1, and the content of Cu in a foremost surface 6 of the Ni plating layer 3 is less than 0.5% by mass, and the adhesion strength of the Ni plating layer 3 to the base substrate 1 is not less than 90 N/mm2. A semiconductor device includes a semiconductor element, and the heat spreader for removing heat generated when the semiconductor element is operated. In a manufacturing method, a first plating layer to form the high Cu region is formed on the connection surface 2 of the base substrate 1 and heat-treated at a temperature of more than 600° C., and a second plating layer is then formed thereon and heat-treated at a temperature of not more than 600° C.
摘要翻译：在由包含Cu的材料构成的基底基板1的连接表面2上，散热器包括Cu含量高于1质量％的具有高Cu区域5的Ni镀层3，与基底基板1的界面的厚度方向不大于2μm，Ni镀层3的前表面6中的Cu含量小于0.5质量％，Ni镀层的粘合强度层3到基底基板1的厚度不小于90N / mm2。半导体器件包括半导体元件和用于去除半导体元件工作时产生的热量的散热器。在制造方法中，在基底基板1的连接面2上形成形成高Cu区域的第一镀层，并在600℃以上的温度进行热处理，然后形成第二镀层在不高于600℃的温度下进行热处理

7. 发明申请

US20050230819A1 Semiconductor Heat-Dissipating Substrate, and Manufacturing Method and Package Therefor 有权
标题翻译：半导体散热基板及其制造方法和封装
公开(公告)号：US20050230819A1
公开(公告)日：2005-10-20
申请号：US11160691
申请日：2005-07-06
申请人： Kouichi Takashima , Shin-ichi Yamagata , Yugaku Abe , Akira Sasame
发明人： Kouichi Takashima , Shin-ichi Yamagata , Yugaku Abe , Akira Sasame
IPC分类号： H01L23/34 , H01L21/52 , H01L23/36 , H01L23/373 , H01L23/40
CPC分类号： B22F3/26 , B22F7/08 , B22F2998/10 , B22F2999/00 , H01L23/3733 , H01L24/27 , H01L2224/83101 , H01L2924/12041 , H01L2924/12042 , Y10T428/12042 , Y10T428/12479 , B22F1/0059 , B22F3/02 , B22F3/1121 , B22F2207/11 , B22F2207/01 , H01L2924/00
摘要： In a semiconductor heat-dissipating substrate made of a Cu—W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 μm or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 μm or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.
摘要翻译：在由铜孔渗透的Cu-W合金制成的半导体散热基板中，作为特定累积表面积为95μm以上的孔径为0.3μm以上的多孔钨体，其孔径为 5％的特定累积表面积为30μm以下，通过将铁族金属的含量降低至0.02重量％以下，得到210W / mK以上的导热率。同样地，通过利用多轴压机来改变成型物体中渗透的铜的量来改变中间部分和周边部分中的囊泡的量使得以低成本提供半导体散热基板，其在中间部分和周边部分之间由不同的材料制成，没有粘结物质。

8. 发明授权

US4956132A Method for applying mold-releasing agent onto mold surfaces using a mold-releasing sheet 失效
标题翻译：使用脱模片将脱模剂涂布在模具表面上的方法
公开(公告)号：US4956132A
公开(公告)日：1990-09-11
申请号：US268674
申请日：1988-11-07
申请人： Toshihiko Kitaura , Akio Nakamura , Masayuki Sakamoto , Kouichi Takashima , Kiyotaka Hirakawa , Matao Mizota
发明人： Toshihiko Kitaura , Akio Nakamura , Masayuki Sakamoto , Kouichi Takashima , Kiyotaka Hirakawa , Matao Mizota
IPC分类号： B29C33/58 , B29C33/68 , B29C33/72 , C08K5/14 , C08K5/3445 , H01L21/56
CPC分类号： H01L21/565 , B29C33/58 , B29C33/68 , B29C33/72 , C08K5/14 , C08K5/3445 , H01L2924/0002
摘要： A method of applying a mold-releasing agent to the molding surfaces of a mold after cleaning the surface. This method involves inserting a mold-releasing sheet between said molding surfaces of a mold coating the molding surfaces with the mold releasing agent by heating and pressing the mold-releasing sheet to cure it, and removing the cured sheet from the molding surfaces of the mold. This mold-releasing sheet is composed of (i) uncured rubber, (ii) a curing agent, and (iii) a mold releasing agent. The uncured rubber can be selected from a group consisting of chloroprene rubber, butadiene rubber, nitrile rubber, ethylene-propylene terpolymer rubber, styrene-butadiene rubber, polyisoprene rubber, butyl rubber, silicone rubber, and fluoridated rubber.

9. 发明申请

US20120292769A1 SEMICONDUCTOR ELEMENT MOUNTING MEMBER, METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体元件安装部件，其制造方法和半导体器件
公开(公告)号：US20120292769A1
公开(公告)日：2012-11-22
申请号：US13564426
申请日：2012-08-01
申请人： Kouichi Takashima , Yoshifumi Aoi , Eiji Kamijo
发明人： Kouichi Takashima , Yoshifumi Aoi , Eiji Kamijo
IPC分类号： H01L23/498 , B22F3/12 , B29C67/04 , H05K7/20
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor element mounting member is arranged to infiltrate a matrix metal into a porous body that is formed by sintering diamond particles being in direct contact with each other and that has an infiltration auxiliary layer selectively formed only on the exposed surface of each diamond particle. A production method includes a step at which a mixture of diamond particles, a powder of a chemical element out of which the infiltration auxiliary layer is made, and an ammonium chloride powder is compressed and molded, is then heated to 900° C. or more, and is formed into the porous body. A semiconductor device has a semiconductor element mounted on an element mounting surface of the semiconductor element mounting member with a connecting layer therebetween.
摘要翻译：半导体元件安装构件被布置成将基体金属渗入通过烧结彼此直接接触的金刚石颗粒形成的多孔体，并且具有仅在每个金刚石颗粒的暴露表面上选择性地形成的渗透辅助层。制造方法包括将金刚石颗粒，其中形成渗透辅助层的化学元素的粉末和氯化铵粉末压缩和模制的混合物的步骤加热至900℃以上，并形成多孔体。半导体器件具有安装在半导体元件安装构件的元件安装表面上的半导体元件，其间具有连接层。

10. 发明授权

US07470982B2 Substrate for semiconductor device and semiconductor device 失效
标题翻译：半导体器件和半导体器件用基板
公开(公告)号：US07470982B2
公开(公告)日：2008-12-30
申请号：US10593819
申请日：2005-03-07
申请人： Kouichi Takashima , Kazuya Kamitake
发明人： Kouichi Takashima , Kazuya Kamitake
IPC分类号： H01L23/10 , H01L23/34
CPC分类号： H01L23/142 , H01L23/053 , H01L2924/0002 , H01L2924/15311 , H01L2924/1532 , H01L2924/16152 , H01L2924/00
摘要： A configuration for a substrate for a semiconductor device which makes it possible to achieve further stabilization of the voltage for driving a semiconductor element (5) to be mounted is provided. The substrate for a semiconductor device is provided with a base (1) and an electrically insulating film (3) formed on at least a portion of the surface of this base (1). The base (1) is made of one type of material selected from the group consisting of an alloy including copper and tungsten, an alloy including copper and molybdenum, an alloy including copper, tungsten and molybdenum, a composite material including aluminum and silicon carbide, and a composite material including silicon and silicon carbide. The electrically insulating film (3) includes plural layers made of at least one type of film selected from the group consisting of a diamond-like carbon film, an aluminum oxide film and a silicon oxide film.
摘要翻译：提供一种用于半导体器件的衬底的配置，其可以进一步稳定用于驱动要安装的半导体元件（5）的电压。用于半导体器件的衬底设置有形成在该基底（1）的至少一部分表面上的基底（1）和电绝缘膜（3）。基体（1）由选自包括铜和钨的合金，包括铜和钼的合金，包括铜，钨和钼的合金，包括铝和碳化硅的复合材料的一种材料制成，以及包含硅和碳化硅的复合材料。电绝缘膜（3）包括由选自金刚石状碳膜，氧化铝膜和氧化硅膜中的至少一种类型的膜制成的多层。

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