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1. 发明申请

US20090073158A1 SEMICONDUCTOR ELEMENT AND DEVICE USING THE SAME 审中-公开
标题翻译：使用相同的半导体元件和器件
公开(公告)号：US20090073158A1
公开(公告)日：2009-03-19
申请号：US12212303
申请日：2008-09-17
申请人： Kotaro Kataoka , Hiroshi Iwata , Yoshiji Ohta , Kenji Kimoto , Kenji Komiya , Kouichiro Adachi , Akihide Shibata , Masatomi Harada
发明人： Kotaro Kataoka , Hiroshi Iwata , Yoshiji Ohta , Kenji Kimoto , Kenji Komiya , Kouichiro Adachi , Akihide Shibata , Masatomi Harada
IPC分类号： G09G5/00 , H01L29/792 , G05F1/10
CPC分类号： H01L29/792 , H01L29/66833
摘要： A memory element having a large memory window and a high reliability is provided at low cost by performing high speed write and erase operations at a relatively low voltage and suppressing rewrite degradation. A memory element includes a semiconductor layer arranged on an insulating substrate, a first diffusion layer region and a second diffusion layer region having a conductivity type of P-type, a charge accumulating film for covering a channel region between the first diffusion layer region and the second diffusion layer region and being injected with charges from the channel region, and a gate electrode positioned on a side opposite to the channel region with the charge accumulating film in between.
摘要翻译：通过在相对低的电压下执行高速写入和擦除操作并且抑制重写劣化，以低成本提供具有大存储器窗口和高可靠性的存储元件。存储元件包括布置在绝缘基板上的半导体层，具有P型导电类型的第一扩散层区域和第二扩散层区域，用于覆盖第一扩散层区域和第二扩散层区域之间的沟道区域的电荷累积膜第二扩散层区域，并且从沟道区域注入电荷，以及位于与沟道区相反的一侧的栅电极，电荷积聚膜在其间。

2. 发明授权

US09079501B2 Vehicle driving device, vehicle charging system, and automobile 有权
标题翻译：车辆驱动装置，车辆充电系统和汽车
公开(公告)号：US09079501B2
公开(公告)日：2015-07-14
申请号：US13595661
申请日：2012-08-27
申请人： Kenji Komiya , Akihide Shibata , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata
发明人： Kenji Komiya , Akihide Shibata , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata
IPC分类号： G05D1/00 , B60L1/00 , B60L1/06 , B60L1/16 , B60L3/00 , B60L3/04 , B60L8/00 , B60L11/18 , B60L15/00
CPC分类号： B60L1/003 , B60L1/06 , B60L1/16 , B60L3/0046 , B60L3/04 , B60L8/003 , B60L11/1859 , B60L11/1868 , B60L15/007 , B60L2200/26 , B60L2210/10 , B60L2240/34 , B60L2240/36 , B60L2240/547 , B60L2240/549 , Y02T10/645 , Y02T10/7005 , Y02T10/7011 , Y02T10/7066 , Y02T10/7083 , Y02T10/7216 , Y02T90/16
摘要： A vehicle driving device is arranged such that in accordance with an instruction signal from the outside, a first battery managing section outputs, to the outside, a signal related to charging/discharging control for a first battery.
摘要翻译：车辆驱动装置被布置成使得根据来自外部的指令信号，第一电池管理部分向外部输出与第一电池的充电/放电控制相关的信号。

3. 发明授权

US06825528B2 Semiconductor device, method of manufacture thereof, and information processing device 失效
标题翻译：半导体装置及其制造方法以及信息处理装置
公开(公告)号：US06825528B2
公开(公告)日：2004-11-30
申请号：US10149255
申请日：2002-08-12
申请人： Hiroshi Iwata , Akihide Shibata , Seizo Kakimoto , Kouichiro Adachi , Masayuki Nakano
发明人： Hiroshi Iwata , Akihide Shibata , Seizo Kakimoto , Kouichiro Adachi , Masayuki Nakano
IPC分类号： H01L2976
CPC分类号： H01L29/66628 , H01L21/2251 , H01L21/823814 , H01L21/823864 , H01L21/823878 , H01L29/41783 , H01L29/665 , H01L29/66545 , H01L29/7834 , H01L29/78657
摘要： A semiconductor device 1910 comprises a semiconductor substrate 100 including an isolation region 101 and an active region 102, a gate electrode 104 provided on the active region 102 via a gate insulating film 103, part of a side of the gate electrode 104 being covered with a gate electrode side wall insulating film 105, and a source region 106 and a drain region 106 provided on opposite sides of the gate electrode 104 via the gate electrode side wall insulating film 105. At least one of the source region 106 and the drain region 106 has a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A-A′. An angle between the second surface and a surface of the isolation region is 80 degrees or less.
摘要翻译：半导体器件1910包括包括隔离区域101和有源区域102的半导体衬底100，经由栅极绝缘膜103设置在有源区域102上的栅电极104，栅电极104的一侧的一部分被覆盖有栅电极侧壁绝缘膜105，以及经由栅电极侧壁绝缘膜105设置在栅极电极104的相对侧上的源极区域106和漏极区域106.源极区域106和漏极区域106中的至少一个具有用于接触接触导体的第二表面。第二表面相对于第一表面A-A'倾斜。第二表面与隔离区域的表面之间的角度为80度以下。

4. 发明授权

US07176526B2 Semiconductor device, method for producing the same, and information processing apparatus 有权
标题翻译：半导体装置及其制造方法以及信息处理装置
公开(公告)号：US07176526B2
公开(公告)日：2007-02-13
申请号：US10899183
申请日：2004-07-27
申请人： Hiroshi Iwata , Akihide Shibata , Seizo Kakimoto , Kouichiro Adachi , Masayuki Nakano
发明人： Hiroshi Iwata , Akihide Shibata , Seizo Kakimoto , Kouichiro Adachi , Masayuki Nakano
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66628 , H01L21/2251 , H01L21/823814 , H01L21/823864 , H01L21/823878 , H01L29/41783 , H01L29/665 , H01L29/66545 , H01L29/7834 , H01L29/78657
摘要： A semiconductor device 1910 comprises a semiconductor substrate 100 including an isolation region 101 and an active region 102, a gate electrode 104 provided on the active region 102 via a gate insulating film 103, part of a side of the gate electrode 104 being covered with a gate electrode side wall insulating film 105, and a source region 106 and a drain region 106 provided on opposite sides of the gate electrode 104 via the gate electrode side wall insulating film 105. At least one of the source region 106 and the drain region 106 has a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A–A′. An angle between the second surface and a surface of the isolation region is 80 degrees or less.
摘要翻译：半导体器件1910包括包括隔离区域101和有源区域102的半导体衬底100，经由栅极绝缘膜103设置在有源区域102上的栅电极104，栅电极104的一侧的一部分被覆盖有栅极侧壁绝缘膜105，以及经由栅电极侧壁绝缘膜105设置在栅极电极104的相对侧上的源极区域106和漏极区域106。源极区域106和漏极区域106中的至少一个具有用于接触接触导体的第二表面。第二表面相对于第一表面A-A'倾斜。第二表面与隔离区域的表面之间的角度为80度以下。

5. 发明授权

US07095077B2 Semiconductor memory having two charge storage sections 有权
标题翻译：具有两个电荷存储部分的半导体存储器
公开(公告)号：US07095077B2
公开(公告)日：2006-08-22
申请号：US10824394
申请日：2004-04-15
申请人： Kotaro Kataoka , Hiroshi Iwata , Akihide Shibata
发明人： Kotaro Kataoka , Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/792
CPC分类号： H01L29/66833 , H01L21/28282 , H01L29/7923
摘要： A semiconductor memory includes: a p-type semiconductor (p-type semiconductor film on a substrate, a p-type well region in a semiconductor substrate, or an insulator); a gate insulating film formed on the p-type semiconductor; a gate electrode formed on the gate insulating film; two charge storage sections formed on side walls of the gate electrode; a channel region provided below the gate electrode; and a first n-type diffusion layer region and a second n-type diffusion layer region provided to sides of the channel region, wherein: the charge storage sections are arranged to change an electric current flow between the first n-type diffusion layer region and the second n-type diffusion layer region under application of a voltage to the gate electrode according to the quantity of electric charges stored in the charge storage sections; and the first n-type diffusion layer region is set to a reference voltage, the other n-type diffusion layer region is set to a voltage greater than the reference voltage, and the gate electrode is set to a voltage greater than the reference voltage. Thus, the semiconductor memory obtained is capable of 2 bit operation and easy to miniaturize.
摘要翻译：半导体存储器包括：p型半导体（衬底上的p型半导体膜，半导体衬底中的p型阱区或绝缘体）; 形成在p型半导体上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 形成在栅电极的侧壁上的两个电荷存储部分; 设置在栅电极下方的沟道区; 以及设置在沟道区域的侧面的第一n型扩散层区域和第二n型扩散层区域，其中：电荷存储部分被布置成改变第一n型扩散层区域和根据存储在电荷存储部中的电荷量，向栅电极施加电压的第二n型扩散层区域; 并且将第一n型扩散层区域设定为基准电压，将另一n型扩散层区域设定为大于基准电压的电压，将栅极电极设定为大于基准电压的电压。因此，所获得的半导体存储器能够进行2位操作并且容易小型化。

6. 发明授权

US07315060B2 Semiconductor storage device, manufacturing method therefor and portable electronic equipment 有权
标题翻译：半导体存储装置及其制造方法及便携式电子设备
公开(公告)号：US07315060B2
公开(公告)日：2008-01-01
申请号：US11142770
申请日：2005-06-02
申请人： Hiroshi Iwata , Akihide Shibata , Kotaro Kataoka , Masayuki Nakano
发明人： Hiroshi Iwata , Akihide Shibata , Kotaro Kataoka , Masayuki Nakano
IPC分类号： H01L29/792
CPC分类号： H01L29/6684 , G11C16/0475 , H01L21/28273 , H01L21/28282 , H01L21/28291 , H01L21/84 , H01L27/1203 , H01L29/66825 , H01L29/66833 , H01L29/7923
摘要： A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the gate electrode. A P-type channel region is formed in a surface of the substrate on the side of the gate electrode. N-type first and second diffusion regions are formed on both sides of the channel region. The channel region is composed of an offset region located under the first and second memory function bodies and a gate electrode beneath region located under the gate electrode. The concentration of a dopant which imparts a P-type conductivity to the offset region is effectively lower than the concentration of a dopant which imparts the P-type conductivity to the gate electrode beneath region. This makes it possible to provide the semiconductor storage device which is easily shrunk in scale.
摘要翻译：半导体存储器件具有通过栅极绝缘膜形成在半导体衬底上的单个栅电极。形成在栅电极两侧的第一和第二记忆功能体。在栅极侧的基板的表面形成P型沟道区。在沟道区域的两侧形成N型第一和第二扩散区域。沟道区域由位于第一和第二存储器功能体下面的偏移区域和位于栅电极下方的栅极电极构成。赋予偏移区域的P型导电性的掺杂剂的浓度有效地低于向区域下方的栅电极施加P型导电性的掺杂剂的浓度。这使得可以提供容易缩小的半导体存储装置。

7. 发明申请

US20050280065A1 Semiconductor storage device, manufacturing method therefor and portable electronic equipment 有权
标题翻译：半导体存储装置及其制造方法及便携式电子设备
公开(公告)号：US20050280065A1
公开(公告)日：2005-12-22
申请号：US11142770
申请日：2005-06-02
申请人： Hiroshi Iwata , Akihide Shibata , Kotaro Kataoka , Masayuki Nakano
发明人： Hiroshi Iwata , Akihide Shibata , Kotaro Kataoka , Masayuki Nakano
IPC分类号： G11C16/04 , H01L21/28 , H01L21/336 , H01L21/84 , H01L27/108 , H01L27/12 , H01L29/792
CPC分类号： H01L29/6684 , G11C16/0475 , H01L21/28273 , H01L21/28282 , H01L21/28291 , H01L21/84 , H01L27/1203 , H01L29/66825 , H01L29/66833 , H01L29/7923
摘要： A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the gate electrode. A P-type channel region is formed in a surface of the substrate on the side of the gate electrode. N-type first and second diffusion regions are formed on both sides of the channel region. The channel region is composed of an offset region located under the first and second memory function bodies and a gate electrode beneath region located under the gate electrode. The concentration of a dopant which imparts a P-type conductivity to the offset region is effectively lower than the concentration of a dopant which imparts the P-type conductivity to the gate electrode beneath region. This makes it possible to provide the semiconductor storage device which is easily shrunk in scale.
摘要翻译：半导体存储器件具有通过栅极绝缘膜形成在半导体衬底上的单个栅电极。形成在栅电极两侧的第一和第二记忆功能体。在栅极侧的基板的表面形成P型沟道区。在沟道区域的两侧形成N型第一和第二扩散区域。沟道区域由位于第一和第二存储器功能体之下的偏移区域和位于栅电极下方的栅极电极构成。赋予偏移区域的P型导电性的掺杂剂的浓度有效地低于向区域下方的栅电极施加P型导电性的掺杂剂的浓度。这使得可以提供容易缩小的半导体存储装置。

8. 发明授权

US09181630B2 Method for disposing fine objects, apparatus for arranging fine objects, illuminating apparatus and display apparatus 有权
标题翻译：微细物体的配置方法，微细物体的配置装置，照明装置和显示装置
公开(公告)号：US09181630B2
公开(公告)日：2015-11-10
申请号：US13809433
申请日：2011-06-14
申请人： Akihide Shibata , Tetsu Negishi , Kenji Komiya , Yoshifumi Yaoi , Takeshi Shiomi , Hiroshi Iwata , Akira Takahashi
发明人： Akihide Shibata , Tetsu Negishi , Kenji Komiya , Yoshifumi Yaoi , Takeshi Shiomi , Hiroshi Iwata , Akira Takahashi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36 , C25D13/00 , H01L21/479 , H01L25/075 , H01L23/00 , H01L33/24 , H01L27/15 , H01L33/18 , H01L33/32
CPC分类号： C25D13/00 , H01L21/479 , H01L24/75 , H01L24/80 , H01L24/95 , H01L24/97 , H01L25/0753 , H01L27/156 , H01L33/18 , H01L33/24 , H01L33/32 , H01L2224/08238 , H01L2224/75655 , H01L2224/75723 , H01L2224/7598 , H01L2224/80143 , H01L2224/95101 , H01L2224/95145 , H01L2224/97 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： This method for disposing fine objects, in a substrate preparing step, prepares a substrate having specified positions where fine objects (120) are to be disposed in an area where a first electrode (111) and a second electrode (112) face each other, and in a fluid introducing step, a fluid (121) is introduced on the substrate (110). The fluid (121) contains a plurality of the fine objects (120). The fine objects (120) are diode elements, each of which has, as an alignment structure, a front side layer (130) composed of a dielectric material, and a rear side layer (131) composed of a semiconductor. In the fine object disposing step, by applying an AC voltage to between the first electrode (111) and the second electrode (112), the fine objects (120) are disposed by dielectrophoresis with the front side layer (130) facing up at the predetermined positions in the area (A) where the first electrode (111) and the second electrode (112) face each other.
摘要翻译：用于配置细小物体的方法在基板准备步骤中，准备在第一电极（111）和第二电极（112）彼此面对的区域中具有细微物体（120）的特定位置的基板，并且在流体引入步骤中，将流体（121）引入到所述基板（110）上。流体（121）包含多个精细物体（120）。精细物体（120）是二极管元件，每个二极管元件具有作为对准结构的由电介质材料构成的前侧层（130）和由半导体构成的后侧层（131）。在微细物体设置步骤中，通过在第一电极（111）和第二电极（112）之间施加AC电压，通过介电电泳设置微细物体（120），其中前侧层（130）面向上在第一电极（111）和第二电极（112）彼此面对的区域（A）中的预定位置。

9. 发明授权

US08872214B2 Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device 有权
标题翻译：棒状发光装置，棒状发光装置的制造方法，背光源，照明装置以及显示装置
公开(公告)号：US08872214B2
公开(公告)日：2014-10-28
申请号：US12904773
申请日：2010-10-14
申请人： Tetsu Negishi , Akihide Shibata , Satoshi Morishita , Kenji Komiya , Hiroshi Iwata , Akira Takahashi
发明人： Tetsu Negishi , Akihide Shibata , Satoshi Morishita , Kenji Komiya , Hiroshi Iwata , Akira Takahashi
IPC分类号： H01L33/00 , H01L33/20 , H01L33/38 , H01L33/62 , H01L33/32
CPC分类号： H01L33/20 , H01L33/007 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2224/48463 , H01L2924/3025 , H01L2924/00
摘要： To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.
摘要翻译：为了促进电极连接并实现高发光效率，棒状发光器件包括具有棒状的第一导电类型的半导体芯和形成为覆盖半导体芯的第二导电类型的半导体层。露出半导体芯的一部分的外周面。

10. 发明申请

US20130168708A1 METHOD FOR DISPOSING FINE OBJECTS, APPARATUS FOR ARRANGING FINE OBJECTS, ILLUMINATING APPARATUS AND DISPLAY APPARATUS 有权
标题翻译：处理精细物体的方法，安装精细物体的装置，照明装置和显示装置
公开(公告)号：US20130168708A1
公开(公告)日：2013-07-04
申请号：US13809433
申请日：2011-06-14
申请人： Akihide Shibata , Tetsu Negishi , Kenji Komiya , Yoshifumi Yaoi , Takeshi Shiomi , Hiroshi Iwata , Akira Takahashi
发明人： Akihide Shibata , Tetsu Negishi , Kenji Komiya , Yoshifumi Yaoi , Takeshi Shiomi , Hiroshi Iwata , Akira Takahashi
IPC分类号： C25D13/00 , H01L27/15 , H01L21/479
CPC分类号： C25D13/00 , H01L21/479 , H01L24/75 , H01L24/80 , H01L24/95 , H01L24/97 , H01L25/0753 , H01L27/156 , H01L33/18 , H01L33/24 , H01L33/32 , H01L2224/08238 , H01L2224/75655 , H01L2224/75723 , H01L2224/7598 , H01L2224/80143 , H01L2224/95101 , H01L2224/95145 , H01L2224/97 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： This method for disposing fine objects, in a substrate preparing step, prepares a substrate having specified positions where fine objects (120) are to be disposed in an area where a first electrode (111) and a second electrode (112) face each other, and in a fluid introducing step, a fluid (121) is introduced on the substrate (110). The fluid (121) contains a plurality of the fine objects (120). The fine objects (120) are diode elements, each of which has, as an alignment structure, a front side layer (130) composed of a dielectric material, and a rear side layer (131) composed of a semiconductor. In the fine object disposing step, by applying an AC voltage to between the first electrode (111) and the second electrode (112), the fine objects (120) are disposed by dielectrophoresis with the front side layer (130) facing up at the predetermined positions in the area (A) where the first electrode (111) and the second electrode (112) face each other.
摘要翻译：用于配置细小物体的方法在基板准备步骤中，准备在第一电极（111）和第二电极（112）彼此面对的区域中具有细微物体（120）的特定位置的基板，并且在流体引入步骤中，将流体（121）引入到所述基板（110）上。流体（121）包含多个精细物体（120）。精细物体（120）是二极管元件，每个二极管元件具有作为对准结构的由电介质材料构成的前侧层（130）和由半导体构成的后侧层（131）。在微细物体设置步骤中，通过在第一电极（111）和第二电极（112）之间施加AC电压，通过介电电泳设置微细物体（120），其中前侧层（130）面向上在第一电极（111）和第二电极（112）彼此面对的区域（A）中的预定位置。

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