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1. 发明授权

US08653502B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08653502B2
公开(公告)日：2014-02-18
申请号：US13433195
申请日：2012-03-28
申请人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
发明人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/20 , H01L33/42 , H01L33/46 , H01L2933/0083
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics.
摘要翻译：本发明提供了在特定方向上显示高强度光输出并且提高光提取性能的III族氮化物半导体发光器件。 III族氮化物半导体发光器件包括蓝宝石衬底和具有设置在蓝宝石衬底上并由III族氮化物半导体形成的发光层的层状结构。在蓝宝石衬底的层状结构侧的表面上，以从发光层发出的光产生光强度干涉图案的周期形成台面的二维周期结构。由二维周期结构反射或透射的光具有干涉图案。因此，聚焦在干涉图案中的光强度高的区域的光可以有效地输出到外部，导致光提取性能的提高以及实现期望的方向特性。

2. 发明申请

US20120248406A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20120248406A1
公开(公告)日：2012-10-04
申请号：US13433195
申请日：2012-03-28
申请人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
发明人： Kosuke Yahata , Naoki Nakajo , Koichi Goshonoo , Yuya Ishiguro
IPC分类号： H01L33/06
CPC分类号： H01L33/20 , H01L33/42 , H01L33/46 , H01L2933/0083
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics.
摘要翻译：本发明提供了在特定方向上显示高强度光输出并且提高光提取性能的III族氮化物半导体发光器件。 III族氮化物半导体发光器件包括蓝宝石衬底和具有设置在蓝宝石衬底上并由III族氮化物半导体形成的发光层的层状结构。在蓝宝石衬底的层状结构侧的表面上，以从发光层发出的光产生光强度干涉图案的周期形成台面的二维周期结构。由二维周期结构反射或透射的光具有干涉图案。因此，聚焦在干涉图案中的光强度高的区域的光可以有效地输出到外部，导致光提取性能的提高以及实现期望的方向特性。

3. 发明授权

US07723743B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07723743B2
公开(公告)日：2010-05-25
申请号：US11730565
申请日：2007-04-02
申请人： Kosuke Yahata , Koichi Goshonoo , Miki Moriyama
发明人： Kosuke Yahata , Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/44 , H01L2224/05573 , H01L2224/16245 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.
摘要翻译：半导体发光元件具有形成在半导体层上的电极，覆盖电极顶面的一部分的钝化膜和形成在电极上的多层膜。多层膜具有至少一对Ti层和Ni层，Ti层和Ni层交替堆叠在多层膜中。

4. 发明申请

US20070246735A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20070246735A1
公开(公告)日：2007-10-25
申请号：US11730565
申请日：2007-04-02
申请人： Kosuke Yahata , Koichi Goshonoo , Miki Moriyama
发明人： Kosuke Yahata , Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/44 , H01L2224/05573 , H01L2224/16245 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.
摘要翻译：半导体发光元件具有形成在半导体层上的电极，覆盖电极顶面的一部分的钝化膜和形成在电极上的多层膜。多层膜具有至少一对Ti层和Ni层，Ti层和Ni层交替堆叠在多层膜中。

5. 发明授权

US07947521B2 Method for forming electrode for group-III nitride compound semiconductor light-emitting devices 有权
标题翻译：用于形成III族氮化物化合物半导体发光器件的电极的方法
公开(公告)号：US07947521B2
公开(公告)日：2011-05-24
申请号：US12078066
申请日：2008-03-26
申请人： Koichi Goshonoo , Miki Moriyama
发明人： Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L21/0254 , H01L21/0262 , H01L33/32
摘要： A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.
摘要翻译：用于形成III族氮化物化合物半导体发光器件的电极的方法包括在III族氮化物化合物半导体层上形成平均厚度小于1nm的第一电极层的步骤，第一电极层为由与III族氮化物化合物半导体层具有高粘附性的材料或与III族氮化物化合物半导体层具有低接触电阻的材料制成，并且还包括在第一层上形成由高反射性金属材料制成的第二电极层的步骤电极层。

6. 发明申请

US20100078660A1 Group III Nitride compound semiconductor light-emitting device and method for producing the same 失效
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US20100078660A1
公开(公告)日：2010-04-01
申请号：US12585938
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32
摘要： An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.
摘要翻译：发光器件的n型层具有这样的结构，其中第一n型层，第二n型层和第三n型层依次层叠在蓝宝石衬底上，并且n 由V / Al构成的电极形成在第二n型层上。第一n型层和第二n型层是n-GaN，第三n型层是n-InGaN。第二n型层的n型杂质浓度高于第一n型层和第三n型层的n型杂质浓度。

7. 发明授权

US08716047B2 Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer 有权
标题翻译：用于制造包含TIO2的透明导电层的方法和利用所述透明导电层的制造方法制造半导体发光元件的方法
公开(公告)号：US08716047B2
公开(公告)日：2014-05-06
申请号：US12585015
申请日：2009-08-31
申请人： Koichi Goshonoo , Miki Moriyama , Taro Hitosugi , Tetsuya Hasegawa , Junpei Kasai
发明人： Koichi Goshonoo , Miki Moriyama , Taro Hitosugi , Tetsuya Hasegawa , Junpei Kasai
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/44 , H01L33/0095
摘要： When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10−3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.
摘要翻译：当由氮化镓组成的p层4保持在常温下并通过RF磁控溅射法溅射TNO时，层压TNO层5处于非晶态。然后，包括在减压气氛中热处理无定形TNO层的步骤，其中基本上不存在氢气，从而使TNO层结晶。在溅射时，惰性气体与氧气一起通过，所通过的气体中所含的氧气的体积％为0.10〜0.15％。在这方面，氧分压为5×10 -3 Pa以下。热处理温度为500℃约1小时。

8. 发明授权

US08350284B2 Light emitting element and light emitting device 有权
标题翻译：发光元件和发光元件
公开(公告)号：US08350284B2
公开(公告)日：2013-01-08
申请号：US12585937
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/32 , H01L2224/73265
摘要： A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1Ω; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1Ω.
摘要翻译：发射波长的光的发光元件包括对发射光的波长透明的基板，并且包括第一表面和第二表面; 堆叠在所述第一表面上的半导体层; 第一电极，其反射于所述发射光的波长并形成在所述半导体层的表面上，其中所述第一电极在最远距离处的电阻等于或小于1Ω。以及第二电极，其对所发射的光的波长反射并形成在所述第二表面上，其中所述第二电极在最远距离处的电阻等于或小于1°。

9. 发明申请

US20100078649A1 Light emitting element and light emitting device 有权
标题翻译：发光元件和发光元件
公开(公告)号：US20100078649A1
公开(公告)日：2010-04-01
申请号：US12585937
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/32 , H01L2224/73265
摘要： A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1Ω; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1Ω.
摘要翻译：发射波长的光的发光元件包括对发射光的波长透明的基板，并且包括第一表面和第二表面; 堆叠在所述第一表面上的半导体层; 第一电极，其反射于所述发射光的波长并形成在所述半导体层的表面上，其中所述第一电极在最远距离处的电阻等于或小于1Ω。以及第二电极，其对所发射的光的波长反射并形成在所述第二表面上，其中所述第二电极在最远距离处的电阻等于或小于1°。

10. 发明申请

US20090200563A1 Group III nitride semiconductor light-emitting device and production method therefor 审中-公开
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US20090200563A1
公开(公告)日：2009-08-13
申请号：US12320980
申请日：2009-02-10
申请人： Koichi Goshonoo , Miki Moriyama
发明人： Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L21/30617 , H01L33/32
摘要： Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method facilitates tapering of a bottom portion of the GaN substrate. In the production method, firstly, a Group III nitride semiconductor layer, an ITO electrode, a p-electrode, and an n-electrode are formed on the top surface of a GaN substrate through MOCVD. Thereafter, the GaN substrate is thinned through mechanical polishing of the bottom surface thereof, and then scratches formed by mechanical polishing are removed through chemical mechanical polishing, to thereby planarize the bottom surface. Subsequently, a mask is formed on the bottom surface of the GaN substrate, followed by wet etching with phosphoric acid. By virtue of anisotropy in etching of GaN with phosphoric acid, a tapered surface is exposed so as to be inclined by about 60° with respect to the GaN substrate.
摘要翻译：提供一种用于制造包括用作生长衬底的GaN衬底的III族氮化物半导体发光器件的方法，该方法有助于GaN衬底的底部的锥形化。在制造方法中，首先，通过MOCVD在GaN基板的顶面上形成III族氮化物半导体层，ITO电极，p电极和n电极。此后，通过机械抛光，通过机械抛光形成的GaN底板被机械抛光而减薄，然后通过化学机械抛光去除划痕，从而平坦化底面。随后，在GaN衬底的底表面上形成掩模，然后用磷酸进行湿蚀刻。由于利用磷酸蚀刻GaN的各向异性，使得锥形表面相对于GaN衬底倾斜约60°。

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