专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100062558A1 Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer 有权
标题翻译：用于制造包含TIO2的透明导电层的方法和利用所述透明导电层的制造方法制造半导体发光元件的方法
公开(公告)号：US20100062558A1
公开(公告)日：2010-03-11
申请号：US12585015
申请日：2009-08-31
申请人： Koichi Goshonoo , Miki Moriyama , Taro Hitosugi , Tetsuya Hasegawa , Junpei Kasai
发明人： Koichi Goshonoo , Miki Moriyama , Taro Hitosugi , Tetsuya Hasegawa , Junpei Kasai
IPC分类号： H01L21/283
CPC分类号： H01L33/44 , H01L33/0095
摘要： When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10−3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.
摘要翻译：当由氮化镓组成的p层4保持在常温下并通过RF磁控溅射法溅射TNO时，层压TNO层5处于非晶态。然后，包括在减压气氛中热处理无定形TNO层的步骤，其中基本上不存在氢气，从而使TNO层结晶。在溅射时，惰性气体与氧气一起通过，所通过的气体中所含的氧气的体积％为0.10〜0.15％。在这方面，氧分压为5×10 -3 Pa以下。热处理温度为500℃约1小时。

2. 发明授权

US08716047B2 Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer 有权
标题翻译：用于制造包含TIO2的透明导电层的方法和利用所述透明导电层的制造方法制造半导体发光元件的方法
公开(公告)号：US08716047B2
公开(公告)日：2014-05-06
申请号：US12585015
申请日：2009-08-31
申请人： Koichi Goshonoo , Miki Moriyama , Taro Hitosugi , Tetsuya Hasegawa , Junpei Kasai
发明人： Koichi Goshonoo , Miki Moriyama , Taro Hitosugi , Tetsuya Hasegawa , Junpei Kasai
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/44 , H01L33/0095
摘要： When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10−3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.
摘要翻译：当由氮化镓组成的p层4保持在常温下并通过RF磁控溅射法溅射TNO时，层压TNO层5处于非晶态。然后，包括在减压气氛中热处理无定形TNO层的步骤，其中基本上不存在氢气，从而使TNO层结晶。在溅射时，惰性气体与氧气一起通过，所通过的气体中所含的氧气的体积％为0.10〜0.15％。在这方面，氧分压为5×10 -3 Pa以下。热处理温度为500℃约1小时。

3. 发明申请

US20080308833A1 Group III nitride-based compound semiconductor light-emitting device 审中-公开
标题翻译： III族氮化物系化合物半导体发光元件
公开(公告)号：US20080308833A1
公开(公告)日：2008-12-18
申请号：US12153787
申请日：2008-05-23
申请人： Miki Moriyama , Koichi Goshonoo , Taro Hitosugi , Tetsuya Hasegawa
发明人： Miki Moriyama , Koichi Goshonoo , Taro Hitosugi , Tetsuya Hasegawa
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L2933/0091
摘要： The refractive index of a titanium oxide layer is modified by adding an impurity (e.g., niobium (Nb)) thereto within a range where good electrical conductivity is obtained. The Group III nitride-based compound semiconductor light-emitting device of the invention includes a sapphire substrate, an aluminum nitride (AlN) buffer layer, an n-contact layer, an n-cladding layer, a multiple quantum well layer (emission wavelength: 470 nm), a p-cladding layer, and a p-contact layer. On the p-contact layer is provided a transparent electrode made of niobium titanium oxide and having an embossment. An electrode is provided on the n-contact layer. An electrode pad is provided on a portion of the transparent electrode. Since the transparent electrode is formed from titanium oxide containing 3% niobium, the refractive index with respect to light (wavelength: 470 nm) becomes almost equal to that of the p-contact layer. Thus, the total reflection at the interface between the p-contact layer and the transparent electrode can be avoided to the smallest possible extent. In addition, by virtue of the embossment, light extraction performance is increased by 30%.
摘要翻译：通过在获得良好的导电性的范围内添加杂质（例如铌（Nb））来改变氧化钛层的折射率。本发明的III族氮化物系化合物半导体发光元件包括蓝宝石衬底，氮化铝（AlN）缓冲层，n接触层，n包层，多量子阱层（发射波长： 470nm），p包覆层和p接触层。在p接触层上设置由氧化钛铌构成的透明电极，并具有压纹。电极设置在n接触层上。电极焊盘设置在透明电极的一部分上。由于透明电极由含有3％铌的氧化钛形成，相对于光（波长：470nm）的折射率变得几乎等于p接触层的折射率。因此，可以尽可能小的程度地避免p-接触层和透明电极之间的界面处的全反射。此外，由于压花，光提取性能提高了30％。

4. 发明授权

US07947521B2 Method for forming electrode for group-III nitride compound semiconductor light-emitting devices 有权
标题翻译：用于形成III族氮化物化合物半导体发光器件的电极的方法
公开(公告)号：US07947521B2
公开(公告)日：2011-05-24
申请号：US12078066
申请日：2008-03-26
申请人： Koichi Goshonoo , Miki Moriyama
发明人： Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L21/0254 , H01L21/0262 , H01L33/32
摘要： A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.
摘要翻译：用于形成III族氮化物化合物半导体发光器件的电极的方法包括在III族氮化物化合物半导体层上形成平均厚度小于1nm的第一电极层的步骤，第一电极层为由与III族氮化物化合物半导体层具有高粘附性的材料或与III族氮化物化合物半导体层具有低接触电阻的材料制成，并且还包括在第一层上形成由高反射性金属材料制成的第二电极层的步骤电极层。

5. 发明申请

US20100078660A1 Group III Nitride compound semiconductor light-emitting device and method for producing the same 失效
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US20100078660A1
公开(公告)日：2010-04-01
申请号：US12585938
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32
摘要： An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.
摘要翻译：发光器件的n型层具有这样的结构，其中第一n型层，第二n型层和第三n型层依次层叠在蓝宝石衬底上，并且n 由V / Al构成的电极形成在第二n型层上。第一n型层和第二n型层是n-GaN，第三n型层是n-InGaN。第二n型层的n型杂质浓度高于第一n型层和第三n型层的n型杂质浓度。

6. 发明授权

US08350284B2 Light emitting element and light emitting device 有权
标题翻译：发光元件和发光元件
公开(公告)号：US08350284B2
公开(公告)日：2013-01-08
申请号：US12585937
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/32 , H01L2224/73265
摘要： A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1Ω; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1Ω.
摘要翻译：发射波长的光的发光元件包括对发射光的波长透明的基板，并且包括第一表面和第二表面; 堆叠在所述第一表面上的半导体层; 第一电极，其反射于所述发射光的波长并形成在所述半导体层的表面上，其中所述第一电极在最远距离处的电阻等于或小于1Ω。以及第二电极，其对所发射的光的波长反射并形成在所述第二表面上，其中所述第二电极在最远距离处的电阻等于或小于1°。

7. 发明申请

US20100078649A1 Light emitting element and light emitting device 有权
标题翻译：发光元件和发光元件
公开(公告)号：US20100078649A1
公开(公告)日：2010-04-01
申请号：US12585937
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/32 , H01L2224/73265
摘要： A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1Ω; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1Ω.
摘要翻译：发射波长的光的发光元件包括对发射光的波长透明的基板，并且包括第一表面和第二表面; 堆叠在所述第一表面上的半导体层; 第一电极，其反射于所述发射光的波长并形成在所述半导体层的表面上，其中所述第一电极在最远距离处的电阻等于或小于1Ω。以及第二电极，其对所发射的光的波长反射并形成在所述第二表面上，其中所述第二电极在最远距离处的电阻等于或小于1°。

8. 发明申请

US20090200563A1 Group III nitride semiconductor light-emitting device and production method therefor 审中-公开
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US20090200563A1
公开(公告)日：2009-08-13
申请号：US12320980
申请日：2009-02-10
申请人： Koichi Goshonoo , Miki Moriyama
发明人： Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L21/30617 , H01L33/32
摘要： Provided is a method for producing a Group III nitride semiconductor light-emitting device including a GaN substrate serving as a growth substrate, which method facilitates tapering of a bottom portion of the GaN substrate. In the production method, firstly, a Group III nitride semiconductor layer, an ITO electrode, a p-electrode, and an n-electrode are formed on the top surface of a GaN substrate through MOCVD. Thereafter, the GaN substrate is thinned through mechanical polishing of the bottom surface thereof, and then scratches formed by mechanical polishing are removed through chemical mechanical polishing, to thereby planarize the bottom surface. Subsequently, a mask is formed on the bottom surface of the GaN substrate, followed by wet etching with phosphoric acid. By virtue of anisotropy in etching of GaN with phosphoric acid, a tapered surface is exposed so as to be inclined by about 60° with respect to the GaN substrate.
摘要翻译：提供一种用于制造包括用作生长衬底的GaN衬底的III族氮化物半导体发光器件的方法，该方法有助于GaN衬底的底部的锥形化。在制造方法中，首先，通过MOCVD在GaN基板的顶面上形成III族氮化物半导体层，ITO电极，p电极和n电极。此后，通过机械抛光，通过机械抛光形成的GaN底板被机械抛光而减薄，然后通过化学机械抛光去除划痕，从而平坦化底面。随后，在GaN衬底的底表面上形成掩模，然后用磷酸进行湿蚀刻。由于利用磷酸蚀刻GaN的各向异性，使得锥形表面相对于GaN衬底倾斜约60°。

9. 发明申请

US20090072267A1 Group III nitride-based compound semiconductor light-emitting device 审中-公开
标题翻译： III族氮化物系化合物半导体发光元件
公开(公告)号：US20090072267A1
公开(公告)日：2009-03-19
申请号：US12232320
申请日：2008-09-15
申请人： Koichi Goshonoo , Miki Moriyama
发明人： Koichi Goshonoo , Miki Moriyama
IPC分类号： H01L33/00
CPC分类号： H01L27/15
摘要： Provided is a GaN-based semiconductor light-emitting device which does not require an external constant-current circuit. The light-emitting device of the present invention includes a sapphire substrate; an AlN buffer layer formed on the substrate; and an HEMT structure formed on the buffer layer, the HEMT structure including a GaN layer and an Al0.2Ga0.8N layer. On the Al0.2Ga0.8N layer are sequentially formed an n-GaN layer, an MQW light-emitting layer including an InGaN well layer and an AlGaN barrier layer, and a p-GaN layer. A source electrode and an HEMT/LED connection electrode are formed on an exposed portion of the Al0.2Ga0.8N layer. The HEMT/LED connection electrode serves as both the corresponding drain electrode and an electrode for injecting electrons into the n-GaN layer. An ITO transparent electrode is formed on the top surface of the p-GaN layer, and a gold pad electrode is formed on a portion of the top surface of the transparent electrode.
摘要翻译：提供了不需要外部恒流电路的GaN系半导体发光装置。本发明的发光装置包括：蓝宝石基板; 形成在所述基板上的AlN缓冲层; 以及形成在缓冲层上的HEMT结构，所述HEMT结构包括GaN层和Al0.2Ga0.8N层。在Al0.2Ga0.8N层依次形成n-GaN层，包含InGaN阱层和AlGaN阻挡层的MQW发光层和p-GaN层。源极和HEMT / LED连接电极形成在Al0.2Ga0.8N层的暴露部分上。 HEMT / LED连接电极用作相应的漏电极和用于将电子注入到n-GaN层中的电极。在p-GaN层的顶表面上形成ITO透明电极，并且在透明电极的顶表面的一部分上形成金焊盘电极。

10. 发明授权

US08610167B2 Group III nitride compound semiconductor light-emitting device and method for producing the same 失效
标题翻译： III族氮化物化合物半导体发光器件及其制造方法
公开(公告)号：US08610167B2
公开(公告)日：2013-12-17
申请号：US12585938
申请日：2009-09-29
申请人： Miki Moriyama , Koichi Goshonoo
发明人： Miki Moriyama , Koichi Goshonoo
IPC分类号： H01L33/02
CPC分类号： H01L33/14 , H01L33/32
摘要： An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.
摘要翻译：发光器件的n型层具有这样的结构，其中第一n型层，第二n型层和第三n型层依次层叠在蓝宝石衬底上，并且n 由V / Al构成的电极形成在第二n型层上。第一n型层和第二n型层是n-GaN，第三n型层是n-InGaN。第二n型层的n型杂质浓度高于第一n型层和第三n型层的n型杂质浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式