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1. 发明授权

US07662646B2 Plasma processing method and plasma processing apparatus for performing accurate end point detection 有权
标题翻译：用于执行精确终点检测的等离子体处理方法和等离子体处理装置
公开(公告)号：US07662646B2
公开(公告)日：2010-02-16
申请号：US11687428
申请日：2007-03-16
申请人： Kosuke Ogasawara , Susumu Saito , Syuji Nozawa
发明人： Kosuke Ogasawara , Susumu Saito , Syuji Nozawa
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.
摘要翻译：在等离子体处理方法中，通过使用多元分析获得基板类型数据和光学数据之间的相关性; 基于等离子体处理时的相关性，从光学数据获得基板型数据; 并且通过使用所获得的基板类型数据来确定基板类型。此外，从设置数据组中选择与所确定的基板类型相对应的设置数据集，每个设置数据组用于检测等离子体处理的等离子体处理结束点，每个设置数据集被预先存储在数据存储单元中; 基于所选择的设置数据集来检测等离子体处理的终点; 并且在检测到的终点处终止等离子体处理。

2. 发明授权

US08580077B2 Plasma processing apparatus for performing accurate end point detection 有权
标题翻译：用于执行精确终点检测的等离子体处理装置
公开(公告)号：US08580077B2
公开(公告)日：2013-11-12
申请号：US12637955
申请日：2009-12-15
申请人： Kosuke Ogasawara , Susumu Saito , Syuji Nozawa
发明人： Kosuke Ogasawara , Susumu Saito , Syuji Nozawa
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A plasma processing apparatus for generating a plasma of a processing gas by applying a high frequency power to an electrode provided in a processing chamber and processing a substrate using the plasma is provided. The plasma processing apparatus includes an optical data detection unit, a data storage unit and a control unit. The optical data detection unit detects optical data when plasma processing the substrate. The data storage unit stores correlation data representing a correlation between type data corresponding to a plurality of types classified based on a type of a mask or a film to be processed disposed on the substrate and optical data to be detected by the optical data detection unit, and end point detection setting data sets, each of the setting data sets serving to detect a plasma processing end point and corresponding to one of the types.
摘要翻译：提供了一种等离子体处理装置，其通过向设置在处理室中的电极施加高频功率并使用等离子体处理衬底来产生处理气体的等离子体。等离子体处理装置包括光学数据检测单元，数据存储单元和控制单元。光学数据检测单元在等离子体处理衬底时检测光学数据。数据存储单元存储表示与基于掩膜的类型分类的多种类型的类型数据之间的相关性的相关数据，以及由光学数据检测单元检测的要被检测的光学数据，和终点检测设定数据组，每个设定数据组用于检测等离子体处理终点并对应于其中一种类型。

3. 发明申请

US20060191877A1 Plasma processing method and post-processing method 有权
标题翻译：等离子体处理方法和后处理方法
公开(公告)号：US20060191877A1
公开(公告)日：2006-08-31
申请号：US11354836
申请日：2006-02-16
申请人： Akitaka Shimizu , Kosuke Ogasawara , Susumu Saito
发明人： Akitaka Shimizu , Kosuke Ogasawara , Susumu Saito
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01L21/02057 , H01J37/32477 , H01L21/02071 , H01L21/28123 , H01L21/67069 , H01L21/67207
摘要： A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a second plasma process, subsequent to the first plasma process, of supplying a gas containing oxygen into the chamber to generate second plasma, thereby processing the chamber and the target object; and a third plasma process, subsequent to the second plasma process, of turning a gas containing at least fluorine into plasma to generate third plasma, thereby processing the target object.
摘要翻译：用于对放置在腔室中的目标物体进行等离子体处理的等离子体处理方法包括：将至少含有卤素元素的气体转换成等离子体以产生第一等离子体的第一等离子体处理，从而处理目标物体; 在第一等离子体处理之后的第二等离子体工艺，将含氧气体供应到室中以产生第二等离子体，由此处理室和目标物体; 以及在第二等离子体处理之后的第三等离子体处理将至少含有氟的气体转化为等离子体以产生第三等离子体，由此处理目标物体。

4. 发明授权

US07871532B2 Plasma processing method and post-processing method 有权
标题翻译：等离子体处理方法和后处理方法
公开(公告)号：US07871532B2
公开(公告)日：2011-01-18
申请号：US11354836
申请日：2006-02-16
申请人： Akitaka Shimizu , Kosuke Ogasawara , Susumu Saito
发明人： Akitaka Shimizu , Kosuke Ogasawara , Susumu Saito
IPC分类号： B23K9/02
CPC分类号： H01L21/02057 , H01J37/32477 , H01L21/02071 , H01L21/28123 , H01L21/67069 , H01L21/67207
摘要： A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a second plasma process, subsequent to the first plasma process, of supplying a gas containing oxygen into the chamber to generate second plasma, thereby processing the chamber and the target object; and a third plasma process, subsequent to the second plasma process, of turning a gas containing at least fluorine into plasma to generate third plasma, thereby processing the target object.
摘要翻译：用于对放置在腔室中的目标物体进行等离子体处理的等离子体处理方法包括：将至少含有卤素元素的气体转换成等离子体以产生第一等离子体的第一等离子体处理，从而处理目标物体; 在第一等离子体处理之后的第二等离子体工艺，将含氧气体供应到室中以产生第二等离子体，由此处理室和目标物体; 以及在第二等离子体处理之后的第三等离子体处理将至少含有氟的气体转化为等离子体以产生第三等离子体，由此处理目标物体。

5. 发明授权

US08232207B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08232207B2
公开(公告)日：2012-07-31
申请号：US12647206
申请日：2009-12-24
申请人： Kosuke Ogasawara , Kiyohito Ito
发明人： Kosuke Ogasawara , Kiyohito Ito
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3085
摘要： In a substrate processing method of processing a substrate that includes an oxide layer as a mask layer and a silicon layer as a target layer to be processed, the silicon layer is etched while depositing a deposit on a surface of the oxide layer by a plasma generated from a mixed gas of a fluorine-based gas, a bromine-based gas, O2 gas, and SiCl4 gas to secure a thickness of the mask layer.
摘要翻译：在处理包括作为掩模层的氧化物层和作为被处理的目标层的硅层的衬底的衬底处理方法中，蚀刻硅层，同时通过产生的等离子体沉积在氧化物层的表面上来自氟系气体，溴系气体，O 2气体和SiCl 4气体的混合气体，以确保掩模层的厚度。

6. 发明授权

US08187980B2 Etching method, etching apparatus and storage medium 有权
标题翻译：蚀刻方法，蚀刻装置和存储介质
公开(公告)号：US08187980B2
公开(公告)日：2012-05-29
申请号：US12021452
申请日：2008-01-29
申请人： Kosuke Ogasawara
发明人： Kosuke Ogasawara
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/32091 , H01L21/32137
摘要： An etching method for forming a groove by etching a silicon layer of a substrate by using a mask which has a first region where an opening with a first opening width is formed and a second region where an opening with a second opening width larger than the first opening width is formed, the method includes: mounting the substrate on a mounting table in a processing chamber; converting a processing gas containing Cl2 gas, HBr gas, and one of CO gas and CO2 gas into a plasma; and etching the silicon layer by the plasma.
摘要翻译：一种用于通过使用具有形成有第一开口宽度的开口的第一区域的掩模蚀刻衬底的硅层并形成具有第二开口宽度大于第一开口宽度的开口的第二区域来形成沟槽的蚀刻方法形成开口宽度，该方法包括：将基板安装在处理室中的安装台上; 将含有Cl 2气体，HBr气体和CO气体和CO 2气体中的一种的处理气体转化为等离子体; 并通过等离子体蚀刻硅层。

7. 发明申请

US20080216957A1 PLASMA PROCESSING APPARATUS, CLEANING METHOD THEREOF, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理设备，其清洁方法，控制程序和计算机存储介质
公开(公告)号：US20080216957A1
公开(公告)日：2008-09-11
申请号：US12040222
申请日：2008-02-29
申请人： Kosuke Ogasawara , Takamichi Kikuchi
发明人： Kosuke Ogasawara , Takamichi Kikuchi
IPC分类号： H01L21/306 , B08B7/00
CPC分类号： B08B7/0035 , H01J37/32091 , H01J37/3244 , H01J37/32862
摘要： A cleaning method for a plasma processing apparatus includes introducing a cleaning gas containing Cl2 and N2 into the processing chamber by the gas supply mechanism; and removing aluminum-based deposits adhered to the inside of the processing chamber by generating a plasma of the cleaning gas by the plasma generating mechanism. The plasma processing apparatus includes a processing chamber for accommodating and processing a target substrate therein; a gas supply mechanism for supplying a gas into the processing chamber; a gas exhaust mechanism for evacuating the processing chamber; and a plasma generating mechanism for generating a plasma of the gas supplied in to the processing chamber.
摘要翻译：等离子体处理装置的清洗方法包括：通过气体供给机构将含有Cl 2 N 2和N 2 N的清洗气体引入处理室; 以及通过等离子体产生机构产生清洁气体的等离子体来去除附着在处理室内部的铝基沉积物。等离子体处理装置包括：处理室，用于在其中容纳和处理目标基板; 用于将气体供给到所述处理室中的气体供给机构; 用于排出处理室的排气机构; 以及用于产生供应到处理室的气体的等离子体的等离子体产生机构。

8. 发明申请

US20070102399A1 Method and apparatus for manufacturing a semiconductor device, control program and computer-readable storage medium 审中-公开
标题翻译：用于制造半导体器件，控制程序和计算机可读存储介质的方法和装置
公开(公告)号：US20070102399A1
公开(公告)日：2007-05-10
申请号：US11505353
申请日：2006-08-17
申请人： Kosuke Ogasawara
发明人： Kosuke Ogasawara
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3065 , H01L21/308
摘要： A method for manufacturing a semiconductor device, includes a plasma etching process for performing a plasma etching on a substrate to be processed at least having a silicon nitride film, an antireflection film and a photo resist with an opening laminated on a silicon substrate in said order from the lower side, to thereby form in the silicon substrate a trench corresponding to the opening. The etchings of the antireflection film, the silicon nitride film and the silicon substrate are successively performed by using an etching gas at least containing an NF3 gas, an SF6 gas or a gaseous mixture of NF3 and SF6.
摘要翻译：一种用于制造半导体器件的方法包括：等离子体蚀刻工艺，用于在至少具有氮化硅膜的基板上执行等离子体蚀刻，具有防反射膜和具有开口的光致抗蚀剂从而在硅衬底中形成与开口对应的沟槽。通过使用至少含有NF 3气体，SF 6气体的蚀刻气体或SF 6气体的连续进行防反射膜，氮化硅膜和硅衬底的蚀刻， NF 3和SF 6的气体混合物。

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