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1. 发明申请

US20080216957A1 PLASMA PROCESSING APPARATUS, CLEANING METHOD THEREOF, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理设备，其清洁方法，控制程序和计算机存储介质
公开(公告)号：US20080216957A1
公开(公告)日：2008-09-11
申请号：US12040222
申请日：2008-02-29
申请人： Kosuke Ogasawara , Takamichi Kikuchi
发明人： Kosuke Ogasawara , Takamichi Kikuchi
IPC分类号： H01L21/306 , B08B7/00
CPC分类号： B08B7/0035 , H01J37/32091 , H01J37/3244 , H01J37/32862
摘要： A cleaning method for a plasma processing apparatus includes introducing a cleaning gas containing Cl2 and N2 into the processing chamber by the gas supply mechanism; and removing aluminum-based deposits adhered to the inside of the processing chamber by generating a plasma of the cleaning gas by the plasma generating mechanism. The plasma processing apparatus includes a processing chamber for accommodating and processing a target substrate therein; a gas supply mechanism for supplying a gas into the processing chamber; a gas exhaust mechanism for evacuating the processing chamber; and a plasma generating mechanism for generating a plasma of the gas supplied in to the processing chamber.
摘要翻译：等离子体处理装置的清洗方法包括：通过气体供给机构将含有Cl 2 N 2和N 2 N的清洗气体引入处理室; 以及通过等离子体产生机构产生清洁气体的等离子体来去除附着在处理室内部的铝基沉积物。等离子体处理装置包括：处理室，用于在其中容纳和处理目标基板; 用于将气体供给到所述处理室中的气体供给机构; 用于排出处理室的排气机构; 以及用于产生供应到处理室的气体的等离子体的等离子体产生机构。

2. 发明申请

US20070175393A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD 审中-公开
标题翻译：基板处理装置，基板处理方法以及用于实施方法的存储介质存储程序
公开(公告)号：US20070175393A1
公开(公告)日：2007-08-02
申请号：US11668684
申请日：2007-01-30
申请人： Eiichi NISHIMURA , Takamichi Kikuchi
发明人： Eiichi NISHIMURA , Takamichi Kikuchi
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32192 , H01L21/67017 , H01L21/67109 , H01L21/67196 , H01L21/67201
摘要： A substrate processing apparatus that enables an oxide layer and an organic layer to be removed efficiently. A substrate formed at its surface with an organic layer covered with the oxide layer is housed in a chemical reaction processing apparatus of the substrate processing apparatus, in which the oxide layer is subjected to chemical reaction with gas molecules, and thus a product is produced on the substrate surface. The substrate is heated in a chamber of a heat treatment apparatus of the substrate processing apparatus, whereby the product is vaporized and the organic layer is exposed. Microwaves are then introduced into the chamber into which oxygen gas is supplied, whereby there are produced oxygen radicals that decompose and remove the organic layer.
摘要翻译：能够有效地除去氧化物层和有机层的基板处理装置。在其表面上形成有覆盖有氧化物层的有机层的基板被容纳在基板处理装置的化学反应处理装置中，其中氧化物层与气体分子进行化学反应，因此产物在基材表面。在基板处理装置的热处理装置的室中对基板进行加热，由此使产物蒸发，有机层露出。然后将微波引入供应氧气的室中，由此产生分解和去除有机层的氧自由基。

3. 发明申请

US20120132367A1 PROCESSING APPARATUS 审中-公开
标题翻译：加工设备
公开(公告)号：US20120132367A1
公开(公告)日：2012-05-31
申请号：US13303392
申请日：2011-11-23
申请人： Kazuyuki Tezuka , Kenichi Kato , Atsushi Sawachi , Takamichi Kikuchi , Takanori Mimura
发明人： Kazuyuki Tezuka , Kenichi Kato , Atsushi Sawachi , Takamichi Kikuchi , Takanori Mimura
IPC分类号： H01L21/306 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/5096 , H01J37/32091 , H01J37/32366 , H01J37/32385 , H01J37/3244
摘要： There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.
摘要翻译：提供了一种处理装置，其包括：处理气体排出单元，设置在处理室内，以面对安装台并构造成将处理气体排放到处理室中; 对应于处理目标对象的中心部分的第一空间; 对应于处理目标对象的边缘部分的第二空间; 形成在所述第一空间和所述第二空间之间的至少一个第三空间; 以及包括处理气体分配管和阀的处理气体分配单元。这些空间设置在处理气体排出单元内并由分隔壁分隔开。在空间处，形成有用于排出处理气体的排出孔。处理气体分配管与空间连通，并且阀被打开或关闭以允许相邻处理气体分配管彼此连通或彼此隔离。

4. 发明申请

US20110033636A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD 审中-公开
标题翻译：基板处理装置，基板处理方法以及用于实施方法的存储介质存储程序
公开(公告)号：US20110033636A1
公开(公告)日：2011-02-10
申请号：US12909277
申请日：2010-10-21
申请人： Eiichi Nishimura , Takamichi Kikuchi
发明人： Eiichi Nishimura , Takamichi Kikuchi
IPC分类号： B05D3/06
CPC分类号： H01L21/6719 , H01J37/32192 , H01L21/67017 , H01L21/67109 , H01L21/67196 , H01L21/67201
摘要： A substrate processing apparatus that enables an oxide layer and an organic layer to be removed efficiently. A substrate formed at its surface with an organic layer covered with the oxide layer is housed in a chemical reaction processing apparatus of the substrate processing apparatus, in which the oxide layer is subjected to chemical reaction with gas molecules, and thus a product is produced on the substrate surface. The substrate is heated in a chamber of a heat treatment apparatus of the substrate processing apparatus, whereby the product is vaporized and the organic layer is exposed. Microwaves are then introduced into the chamber into which oxygen gas is supplied, whereby there are produced oxygen radicals that decompose and remove the organic layer.
摘要翻译：能够有效地除去氧化物层和有机层的基板处理装置。在其表面上形成有覆盖有氧化物层的有机层的基板被容纳在基板处理装置的化学反应处理装置中，其中氧化物层与气体分子进行化学反应，因此产物在基材表面。在基板处理装置的热处理装置的室中对基板进行加热，由此使产物蒸发，有机层露出。然后将微波引入供应氧气的室中，由此产生分解和去除有机层的氧自由基。

5. 发明授权

US07736942B2 Substrate processing apparatus, substrate processing method and storage medium 失效
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US07736942B2
公开(公告)日：2010-06-15
申请号：US12191041
申请日：2008-08-13
申请人： Eiichi Nishimura , Takamichi Kikuchi
发明人： Eiichi Nishimura , Takamichi Kikuchi
IPC分类号： H01L51/40
CPC分类号： H01L21/6719 , H01L21/02063 , H01L21/02071 , H01L21/67017
摘要： A substrate processing apparatus is provided to enable to efficiently remove an oxide layer and an organic material layer. A third process unit (36) of a substrate processing apparatus (10) includes a box-shaped process vessel (chamber) (50), a nitrogen gas supply system (190) and an ozone gas supply system (191). The ozone gas supply system (191) includes an ozone gas supply unit (195) and an ozone gas supply pipe (196) connected to the ozone gas supply unit (195). The ozone gas supply pipe (196) has an ozone gas supply hole (197) having an opening arranged opposite to a wafer (W). The ozone gas supply unit (195) supplies an ozone (O3) gas into the chamber (50) through the ozone gas supply hole (197) via the ozone gas supply pipe (196).
摘要翻译：提供了一种能够有效地去除氧化物层和有机材料层的衬底处理装置。基板处理装置（10）的第三处理单元（36）包括箱状处理容器（室）（50），氮气供给系统（190）和臭氧气体供给系统（191）。臭氧气体供给系统（191）包括与臭氧气体供给部（195）连接的臭氧气体供给部（195）和臭氧气体供给管（196）。臭氧气体供给管196具有与晶片W相对设置的开口的臭氧气体供给孔197。臭氧气体供给单元（195）经由臭氧气体供给管（196）通过臭氧气体供给孔（197）向室（50）供给臭氧（O3）。

6. 发明申请

US20080305632A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM 失效
标题翻译：基板加工设备，基板加工方法和储存介质
公开(公告)号：US20080305632A1
公开(公告)日：2008-12-11
申请号：US12191041
申请日：2008-08-13
申请人： Eiichi NISHIMURA , Takamichi Kikuchi
发明人： Eiichi NISHIMURA , Takamichi Kikuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/6719 , H01L21/02063 , H01L21/02071 , H01L21/67017
摘要： A substrate processing apparatus is provided to enable to efficiently remove an oxide layer and an organic material layer. A third process unit (36) of a substrate processing apparatus (10) includes a box-shaped process vessel (chamber) (50), a nitrogen gas supply system (190) and an ozone gas supply system (191). The ozone gas supply system (191) includes an ozone gas supply unit (195) and an ozone gas supply pipe (196) connected to the ozone gas supply unit (195). The ozone gas supply pipe (196) has an ozone gas supply hole (197) having an opening arranged opposite to a wafer (W). The ozone gas supply unit (195) supplies an ozone (O3) gas into the chamber (50) through the ozone gas supply hole (197) via the ozone gas supply pipe (196).
摘要翻译：提供了一种能够有效地去除氧化物层和有机材料层的衬底处理装置。基板处理装置（10）的第三处理单元（36）包括箱状处理容器（室）（50），氮气供给系统（190）和臭氧气体供给系统（191）。臭氧气体供给系统（191）包括与臭氧气体供给部（195）连接的臭氧气体供给部（195）和臭氧气体供给管（196）。臭氧气体供给管196具有与晶片W相对设置的开口的臭氧气体供给孔197。臭氧气体供给单元（195）经由臭氧气体供给管（196）通过臭氧气体供给孔（197）向室（50）供给臭氧（O3）。

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