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1. 发明授权

US08461610B2 Semiconductor light emitting device having a reflective material with a side slant surface and method of manufacturing 有权
标题翻译：具有具有侧面倾斜表面的反射材料和制造方法的半导体发光器件
公开(公告)号：US08461610B2
公开(公告)日：2013-06-11
申请号：US13162151
申请日：2011-06-16
申请人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
发明人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/73253 , H01L2933/0041
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括位于至少一个半导体发光芯片上的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，位于基板上的框架，安装在基板上的芯片，位于波长转换层和芯片的侧表面之间的透明材料层，以朝向波长转换层和至少设置在波长转换层和透明材料层的框架和两个侧表面之间的反射材料层。半导体发光装置可以通过使用反射材料层作为反射器来提高芯片的发光效率，因此可以从小的发光部分发射具有高发光效率的波长转换光表面。

2. 发明授权

US08581287B2 Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing 有权
标题翻译：具有反射材料，波长转换层和具有粗糙和平面表面区域的光学板的半导体发光器件及其制造方法
公开(公告)号：US08581287B2
公开(公告)日：2013-11-12
申请号：US13355754
申请日：2012-01-23
申请人： Takeshi Waragaya , Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
发明人： Takeshi Waragaya , Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/13 , H01L2224/48091 , H01L2224/48247 , H01L2933/0041 , H01L2924/00014
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.
摘要翻译：半导体发光器件及其制造方法可以包括波长转换层，以便发射包括白光的各种彩色光。该装置可以包括板，位于板上的框架，安装在板上的至少一个发光芯片，位于光学板和芯片外表面之间的波长转换层，使得周边区域的密度低于中间区域，反射材料层至少设置在框架与波长转换层的侧面之间。该装置可以具有由反射体形成的反射材料层，并且能够使用具有不同密度的波长转换层，因此能够从各种小的发光面发射具有高发光效率和均匀色调的波长转换光。

3. 发明申请

US20110309388A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件及制造方法
公开(公告)号：US20110309388A1
公开(公告)日：2011-12-22
申请号：US13162151
申请日：2011-06-16
申请人： Kosaburo ITO , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
发明人： Kosaburo ITO , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
IPC分类号： H01L33/08 , H01L33/60 , H01L33/50
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/73253 , H01L2933/0041
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括位于至少一个半导体发光芯片上的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，位于基板上的框架，安装在基板上的芯片，位于波长转换层和芯片的侧表面之间的透明材料层，以朝向波长转换层和至少设置在波长转换层和透明材料层的框架和两个侧表面之间的反射材料层。半导体发光装置可以通过使用反射材料层作为反射器来提高芯片的发光效率，因此可以从小的发光部分发射具有高发光效率的波长转换光表面。

4. 发明申请

US20120025218A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件及制造方法
公开(公告)号：US20120025218A1
公开(公告)日：2012-02-02
申请号：US13196868
申请日：2011-08-02
申请人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
发明人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
IPC分类号： H01L33/50
CPC分类号： H01L33/505 , H01L33/48 , H01L2224/73253 , H01L2933/0041
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括位于至少一个半导体发光芯片上的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，安装在基板上的芯片和布置在波长转换层上的透明板，该透明板包括间隔物和具有高密度的荧光体。波长转换层可以使用间隔物在透明板和芯片的顶表面之间以均匀的厚度形成，以朝向透明板延伸。半导体发光器件可以通过使用包括具有高密度的荧光体的薄波长转换层来提高芯片的发光效率，因此可以发射具有高发光效率的波长转换光一个小的发光面。

5. 发明授权

US08896199B2 Light-emitting device having fluorescent substance particles and spacer particles, and method for manufacturing the same 有权
标题翻译：具有荧光物质颗粒和间隔物颗粒的发光装置及其制造方法
公开(公告)号：US08896199B2
公开(公告)日：2014-11-25
申请号：US13567031
申请日：2012-08-04
申请人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
发明人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
IPC分类号： H01J1/62 , H01J9/00 , H01L33/54 , H01L33/50 , H01L33/60
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/54 , H01L33/56 , H01L33/60 , H01L2224/16225 , H01L2224/73253 , H01L2224/92225 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method for producing a light emitting device having a small light emitting area and showing high light extraction efficiency. An uncured resin 13′ is dropped on either one or both of a light emitting element 11 and a tabular member 14 in such an amount that the resin is maintained on them by surface tension, the light emitting element 11 and the tabular member 14 are piled up with the uncured resin 13′ maintained between them and on a side of the light emitting element by surface tension of the uncured resin 13′ to form an uncured resin layer 13′ having an inclined side 130, and then the resin layer 13 is cured. The tabular member is constituted with a material having an alkali metal oxide content of 0.2% by weight or lower.
摘要翻译：提供一种具有小的发光面积并且显示出高的光提取效率的发光器件的制造方法。将未固化的树脂13'落在发光元件11和板状构件14的一个或两个上，其量使得树脂通过表面张力保持在其上，发光元件11和平板状构件14被堆叠通过未固化树脂13'的表面张力保持在它们之间和发光元件的侧面上的未固化树脂13'，形成具有倾斜侧130的未固化树脂层13'，然后树脂层13固化。板状构件由碱金属氧化物含量为0.2重量％以下的材料构成。

6. 发明授权

US08921877B2 Semiconductor light-emitting device for producing wavelength-converted light and method for manufacturing the same 有权
标题翻译：用于生产波长转换光的半导体发光器件及其制造方法
公开(公告)号：US08921877B2
公开(公告)日：2014-12-30
申请号：US13196868
申请日：2011-08-02
申请人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
发明人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
IPC分类号： H01L33/00 , H01L33/50 , H01L33/48
CPC分类号： H01L33/505 , H01L33/48 , H01L2224/73253 , H01L2933/0041
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括位于至少一个半导体发光芯片上的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，安装在基板上的芯片和布置在波长转换层上的透明板，该透明板包括间隔物和具有高密度的荧光体。波长转换层可以使用间隔物在透明板和芯片的顶表面之间以均匀的厚度形成，以朝向透明板延伸。半导体发光器件可以通过使用包括具有高密度的荧光体的薄波长转换层来提高芯片的发光效率，因此可以发射具有高发光效率的波长转换光一个小的发光面。

7. 发明申请

US20130033169A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130033169A1
公开(公告)日：2013-02-07
申请号：US13567031
申请日：2012-08-04
申请人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
发明人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Naoto Suzuki
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L33/505 , H01L25/0753 , H01L33/54 , H01L33/56 , H01L33/60 , H01L2224/16225 , H01L2224/73253 , H01L2224/92225 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method for producing a light emitting device having a small light emitting area and showing high light extraction efficiency. An uncured resin 13′ is dropped on either one or both of a light emitting element 11 and a tabular member 14 in such an amount that the resin is maintained on them by surface tension, the light emitting element 11 and the tabular member 14 are piled up with the uncured resin 13′ maintained between them and on a side of the light emitting element by surface tension of the uncured resin 13′ to form an uncured resin layer 13′ having an inclined side 130, and then the resin layer 13 is cured. The tabular member is constituted with a material having an alkali metal oxide content of 0.2% by weight or lower.
摘要翻译：提供一种具有小的发光面积并且显示出高的光提取效率的发光器件的制造方法。将未固化的树脂13'落在发光元件11和板状构件14的一个或两个上，其量使得树脂通过表面张力保持在其上，发光元件11和平板状构件14被堆叠通过未固化树脂13'的表面张力保持在它们之间和发光元件的侧面上的未固化树脂13'，形成具有倾斜侧130的未固化树脂层13'，然后树脂层13固化。板状构件由碱金属氧化物含量为0.2重量％以下的材料构成。

8. 发明授权

US08373182B2 Semiconductor light-emitting device and manufacturing method 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08373182B2
公开(公告)日：2013-02-12
申请号：US13229663
申请日：2011-09-09
申请人： Toshihiro Seko , Kosaburo Ito
发明人： Toshihiro Seko , Kosaburo Ito
IPC分类号： H01L33/62
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/504 , H01L33/56 , H01L33/58 , H01L2224/48091 , H01L2224/48465 , H01L2924/3025 , H01L2933/005 , H01L2933/0058 , H01L2924/00
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括封装至少一个半导体发光芯片以发射包括白光的各种彩色光的波长转换层。半导体发光装置可以包括其上安装有芯片的基板，位于基板上的框架，位于波长转换层上的透明板，设置在框架和波长的两个侧面之间的反射材料层转换层和透明板，以及位于反射材料层上的光吸收层。半导体发光装置可以通过使用透明材料和光吸收层来提高发光效率和发光面与非发光面之间的对比度。发射的波长转换的光可以在小的发光表面上具有高的发光效率和发光和非发光表面之间的高对比度。

9. 发明授权

US08446611B2 Image forming apparatus, computer readable recording medium, and method for improving the detection of input image data formats 失效
标题翻译：图像形成装置，计算机可读记录介质和用于改进输入图像数据格式的检测的方法
公开(公告)号：US08446611B2
公开(公告)日：2013-05-21
申请号：US12887153
申请日：2010-09-21
申请人： Toshihiro Seko
发明人： Toshihiro Seko
IPC分类号： G06K15/00
CPC分类号： G06K15/1822 , G06F3/1206 , G06F3/1248 , G06F3/1285 , G06K15/1831
摘要： An image forming apparatus includes data analyzing units configured to respectively interpret image data in accordance with different corresponding data formats, a drawing processing unit configured to execute a drawing process on the basis of a result of the interpretation, a data format determining unit configured to determine the data format of input image data, to cause a particular data analyzing unit corresponding to the data format to interpret the input image data, and to cause another data analyzing unit to interpret the input image data responsive to a format error being generated while the input image data is being processed using the particular data analyzing unit or the drawing processing unit.
摘要翻译：图像形成装置包括被配置为根据不同的相应数据格式分别解释图像数据的数据分析单元，被配置为基于解释结果执行绘图处理的绘图处理单元，被配置为确定输入图像数据的数据格式，使得与数据格式相对应的特定数据分析单元解释输入图像数据，并使另一数据分析单元响应于在输入期间产生的格式错误来解释输入图像数据使用特定数据分析单元或绘图处理单元正在处理图像数据。

10. 发明授权

US08288868B2 Substrate bonding method and semiconductor device 有权
标题翻译：基板接合方法和半导体器件
公开(公告)号：US08288868B2
公开(公告)日：2012-10-16
申请号：US13418037
申请日：2012-03-12
申请人： Toshihiro Seko
发明人： Toshihiro Seko
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： B23K1/19 , B23K2101/40 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29111 , H01L2224/743 , H01L2224/83191 , H01L2224/83193 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/10349 , H01L2924/12036 , H01L2924/00 , H01L2924/01028 , H01L2924/01032 , H01L2924/00014
摘要： A first Sn absorption layer is formed on a principal surface of a first substrate, the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A second Sn absorption layer is formed on a principal surface of a second substrate, the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A solder layer made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.
摘要翻译：第一Sn吸收层形成在第一基板的主表面上，第一Sn吸收层由AuSn合金吸收Sn的金属制成，并降低AuSn合金中的Sn的相对比例。第二Sn吸收层形成在第二基板的主表面上，第二Sn吸收层由AuSn合金的金属吸收Sn制成，并降低AuSn合金中Sn的相对比例。由AuSn合金制成的焊料层形成在第一和第二Sn吸收层的至少一个Sn吸收层上。第一和第二基板通过在第一和第二基板彼此接触的状态下熔化焊料层而结合在一起，第一和第二基板的主表面彼此面对。

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