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1. 发明申请

US20120236582A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件和制造方法
公开(公告)号：US20120236582A1
公开(公告)日：2012-09-20
申请号：US13355754
申请日：2012-01-23
申请人： Takeshi WARAGAYA , Kosaburo ITO , Toshihiro SEKO , Kazuhiko UENO , Soji OWADA
发明人： Takeshi WARAGAYA , Kosaburo ITO , Toshihiro SEKO , Kazuhiko UENO , Soji OWADA
IPC分类号： B60Q1/04 , H01L33/60 , H01L27/15 , F21V29/00 , H01L33/50
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/13 , H01L2224/48091 , H01L2224/48247 , H01L2933/0041 , H01L2924/00014
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.
摘要翻译：半导体发光器件及其制造方法可以包括波长转换层，以便发射包括白光的各种彩色光。该装置可以包括板，位于板上的框架，安装在板上的至少一个发光芯片，位于光学板和芯片外表面之间的波长转换层，使得周边区域的密度低于中间区域，反射材料层至少设置在框架与波长转换层的侧面之间。该装置可以具有由反射体形成的反射材料层，并且能够使用具有不同密度的波长转换层，因此能够从各种小的发光面发射具有高发光效率和均匀色调的波长转换光。

2. 发明授权

US08581287B2 Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing 有权
标题翻译：具有反射材料，波长转换层和具有粗糙和平面表面区域的光学板的半导体发光器件及其制造方法
公开(公告)号：US08581287B2
公开(公告)日：2013-11-12
申请号：US13355754
申请日：2012-01-23
申请人： Takeshi Waragaya , Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
发明人： Takeshi Waragaya , Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/13 , H01L2224/48091 , H01L2224/48247 , H01L2933/0041 , H01L2924/00014
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.
摘要翻译：半导体发光器件及其制造方法可以包括波长转换层，以便发射包括白光的各种彩色光。该装置可以包括板，位于板上的框架，安装在板上的至少一个发光芯片，位于光学板和芯片外表面之间的波长转换层，使得周边区域的密度低于中间区域，反射材料层至少设置在框架与波长转换层的侧面之间。该装置可以具有由反射体形成的反射材料层，并且能够使用具有不同密度的波长转换层，因此能够从各种小的发光面发射具有高发光效率和均匀色调的波长转换光。

3. 发明申请

US20110309388A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件及制造方法
公开(公告)号：US20110309388A1
公开(公告)日：2011-12-22
申请号：US13162151
申请日：2011-06-16
申请人： Kosaburo ITO , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
发明人： Kosaburo ITO , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
IPC分类号： H01L33/08 , H01L33/60 , H01L33/50
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/73253 , H01L2933/0041
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括位于至少一个半导体发光芯片上的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，位于基板上的框架，安装在基板上的芯片，位于波长转换层和芯片的侧表面之间的透明材料层，以朝向波长转换层和至少设置在波长转换层和透明材料层的框架和两个侧表面之间的反射材料层。半导体发光装置可以通过使用反射材料层作为反射器来提高芯片的发光效率，因此可以从小的发光部分发射具有高发光效率的波长转换光表面。

4. 发明申请

US20100155758A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100155758A1
公开(公告)日：2010-06-24
申请号：US12637750
申请日：2009-12-15
申请人： Masami Kumei , Soji Owada , Koichi Takayama , Mitsunori Harada
发明人： Masami Kumei , Soji Owada , Koichi Takayama , Mitsunori Harada
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/56 , H01L33/501 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting device is provided, including a resin which can be manufactured according to a simple process and deliver a desired scattering property. The light emitting device is manufactured according to a step for mixing two or more types of immiscible liquid materials to obtain a composition containing at least two types of materials phase-separated in a sea-island structure, and a step for arranging the composition in proximity to an LED chip, curing the composition with the sea-island structure being maintained, thereby forming an encapsulation resin. Accordingly, it is possible to form an island region which serves as a scattering center, according to a simple step of mixing materials.
摘要翻译：提供了一种发光器件，其包括可以根据简单的工艺制造并提供所需散射特性的树脂。根据用于混合两种或更多种类型的不混溶液体材料的步骤制造发光器件，以获得包含在海岛结构中相分离的至少两种类型的材料的组合物，以及用于将组合物排列在邻近的步骤连接到LED芯片，使保持海岛结构的组合物固化，由此形成封装树脂。因此，根据混合材料的简单步骤，可以形成用作散射中心的岛状区域。

5. 发明授权

US08461610B2 Semiconductor light emitting device having a reflective material with a side slant surface and method of manufacturing 有权
标题翻译：具有具有侧面倾斜表面的反射材料和制造方法的半导体发光器件
公开(公告)号：US08461610B2
公开(公告)日：2013-06-11
申请号：US13162151
申请日：2011-06-16
申请人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
发明人： Kosaburo Ito , Toshihiro Seko , Kazuhiko Ueno , Soji Owada
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/73253 , H01L2933/0041
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括位于至少一个半导体发光芯片上的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，位于基板上的框架，安装在基板上的芯片，位于波长转换层和芯片的侧表面之间的透明材料层，以朝向波长转换层和至少设置在波长转换层和透明材料层的框架和两个侧表面之间的反射材料层。半导体发光装置可以通过使用反射材料层作为反射器来提高芯片的发光效率，因此可以从小的发光部分发射具有高发光效率的波长转换光表面。

6. 发明授权

US08373185B2 Light emitting device including resin and manufacturing method for the same 有权
标题翻译：包括树脂的发光器件及其制造方法
公开(公告)号：US08373185B2
公开(公告)日：2013-02-12
申请号：US12637750
申请日：2009-12-15
申请人： Masami Kumei , Soji Owada , Koichi Takayama , Mitsunori Harada
发明人： Masami Kumei , Soji Owada , Koichi Takayama , Mitsunori Harada
IPC分类号： H01L33/00
CPC分类号： H01L33/56 , H01L33/501 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting device is provided, including a resin which can be manufactured according to a simple process and deliver a desired scattering property. The light emitting device is manufactured according to a step for mixing two or more types of immiscible liquid materials to obtain a composition containing at least two types of materials phase-separated in a sea-island structure, and a step for arranging the composition in proximity to an LED chip, curing the composition with the sea-island structure being maintained, thereby forming an encapsulation resin. Accordingly, it is possible to form an island region which serves as a scattering center, according to a simple step of mixing materials.
摘要翻译：提供了一种发光器件，其包括可以根据简单的工艺制造并提供所需散射特性的树脂。根据用于混合两种或更多种类型的不混溶液体材料的步骤制造发光器件，以获得包含在海岛结构中相分离的至少两种类型的材料的组合物，以及用于将组合物排列在邻近的步骤连接到LED芯片，使保持海岛结构的组合物固化，由此形成封装树脂。因此，根据混合材料的简单步骤，可以形成用作散射中心的岛状区域。

7. 发明授权

US08212277B2 Optical semiconductor device module with power supply through uneven contacts 有权
标题翻译：光电半导体器件模块通过不均匀的接触电源供电
公开(公告)号：US08212277B2
公开(公告)日：2012-07-03
申请号：US12510526
申请日：2009-07-28
申请人： Takaaki Sakai , Norifumi Imazeki , Soji Owada
发明人： Takaaki Sakai , Norifumi Imazeki , Soji Owada
IPC分类号： H01L33/00
CPC分类号： H05K3/325 , H01L2224/48091 , H01L2924/01327 , H01R4/5075 , H01R12/7088 , H01R13/04 , H05K1/056 , H05K1/11 , H05K2201/0311 , H05K2201/0373 , H05K2201/10106 , H05K2201/10409 , H05K2201/10962 , H05K2201/2045 , H01L2924/00014 , H01L2924/00
摘要： In an optical semiconductor device module constructed by an optical semiconductor device having a light emitting portion on its top surface, a mounting substrate adapted to mount the optical semiconductor device thereon, at least one wiring pattern layer formed on a front surface of the mounting substrate, and at least one power supplying portion in contact with the wiring pattern layer, at least one of the power supplying portion and the wiring pattern layer is uneven.
摘要翻译：在由其顶表面上具有发光部分的光半导体器件构成的光学半导体器件模块中，适于将光学半导体器件安装在其上的安装衬底，形成在安装衬底的前表面上的至少一个布线图案层，以及与所述布线图案层接触的至少一个供电部，所述供电部和所述布线图案层中的至少一个是不均匀的。

8. 发明申请

US20100044745A1 OPTICAL SEMICONDUCTOR DEVICE MODULE WITH POWER SUPPLY THROUGH UNEVEN CONTACTS 有权
标题翻译：具有电源的光学半导体器件模块，通过未连接的触点
公开(公告)号：US20100044745A1
公开(公告)日：2010-02-25
申请号：US12510526
申请日：2009-07-28
申请人： Takaaki Sakai , Norifumi Imazeki , Soji Owada
发明人： Takaaki Sakai , Norifumi Imazeki , Soji Owada
IPC分类号： H01L33/00
CPC分类号： H05K3/325 , H01L2224/48091 , H01L2924/01327 , H01R4/5075 , H01R12/7088 , H01R13/04 , H05K1/056 , H05K1/11 , H05K2201/0311 , H05K2201/0373 , H05K2201/10106 , H05K2201/10409 , H05K2201/10962 , H05K2201/2045 , H01L2924/00014 , H01L2924/00
摘要： In an optical semiconductor device module constructed by an optical semiconductor device having a light emitting portion on its top surface, a mounting substrate adapted to mount the optical semiconductor device thereon, at least one wiring pattern layer formed on a front surface of the mounting substrate, and at least one power supplying portion in contact with the wiring pattern layer, at least one of the power supplying portion and the wiring pattern layer is uneven.
摘要翻译：在由其顶表面上具有发光部分的光半导体器件构成的光学半导体器件模块中，适于将光学半导体器件安装在其上的安装衬底，形成在安装衬底的前表面上的至少一个布线图案层，以及与所述布线图案层接触的至少一个供电部，所述供电部和所述布线图案层中的至少一个是不均匀的。

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