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    • 9. 发明授权
    • Chip shaping for flip-chip light emitting diode
    • 倒装芯片发光二极管芯片整形
    • US06784460B2
    • 2004-08-31
    • US10268223
    • 2002-10-10
    • Kee Yean NgYew Cheong Kuan
    • Kee Yean NgYew Cheong Kuan
    • H01L29267
    • H01L33/20
    • A LED of flip-chip design comprises a light emitting region and one or more transparent substrates overlying the light emitting region. The light emitting region includes a negatively doped layer, a positively doped layer, and an active p-n junction layer between the negatively doped layer and the positively doped layer. At least one of the substrates has a pyramidal shape determined by (1) the composition of electrically conductive or electrically non-conductive material, (2) the number of side surfaces, (3) the degree of offset of an apex or top surface, and (4) the slope angle of each side surface relative to a bottom surface.
    • 倒装芯片设计的LED包括发光区域和覆盖发光区域的一个或多个透明基板。 发光区域包括负掺杂层,正掺杂层和负掺杂层和正掺杂层之间的有源p-n结层。 至少一个基板具有通过(1)导电或非导电材料的组成确定的锥体形状,(2)侧表面的数量,(3)顶点或顶表面的偏移度, 和(4)每个侧面相对于底面的倾斜角。