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1. 发明授权

US08637124B2 Oxide material and sputtering target 有权
标题翻译：氧化物材料和溅射靶
公开(公告)号：US08637124B2
公开(公告)日：2014-01-28
申请号：US12067705
申请日：2006-09-15
申请人： Koki Yano , Kazuyoshi Inoue , Tokie Tanaka
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka
IPC分类号： C09K19/42 , C04B41/52 , C01G19/00
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B35/6262 , C04B35/6455 , C04B2235/3234 , C04B2235/3272 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/662 , C04B2235/664 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/086 , Y10T428/10
摘要： An oxide material including indium (In), tin (Sn), and metal element M, and including an ilmenite structure compound; a sputtering target composed thereof; a transparent conductive film formed by using such a sputtering target; and a transparent electrode composed of such a transparent conductive film.
摘要翻译：包括铟（In），锡（Sn）和金属元素M的氧化物材料，并且包括钛铁矿结构化合物; 由其组成的溅射靶; 使用这样的溅射靶形成的透明导电膜; 以及由这种透明导电膜构成的透明电极。

2. 发明授权

US08263977B2 TFT substrate and TFT substrate manufacturing method 有权
标题翻译： TFT基板和TFT基板的制造方法
公开(公告)号：US08263977B2
公开(公告)日：2012-09-11
申请号：US12095681
申请日：2006-11-30
申请人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka, legal representative
发明人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka
IPC分类号： H01L29/72
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1288
摘要： An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.
摘要翻译：本发明的目的是提供一种TFT基板和TFT基板的制造方法，其能够通过减少制造工序中的工序数和提高生产率而大大降低生产成本。 TFT基板包括：基板; 在基板上形成的第一氧化物层; 形成在所述第一氧化物层上方的第二氧化物层，其间插入有沟道部分; 在所述基板上形成的栅极绝缘膜，所述第一氧化物层和所述第二氧化物层; 形成在栅极绝缘膜上方的栅电极和栅极线。

3. 发明授权

US07998372B2 Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel 有权
标题翻译：半导体薄膜，其制造方法，薄膜晶体管和有源矩阵驱动显示面板
公开(公告)号：US07998372B2
公开(公告)日：2011-08-16
申请号：US12094228
申请日：2006-11-16
申请人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka
IPC分类号： H01B1/08 , H01L29/12
CPC分类号： H01L29/7869 , Y10S977/773
摘要： Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
摘要翻译：公开了即使在柔性树脂基板上也可以在较低温度下形成的半导体薄膜。由于半导体薄膜对于可见光是稳定的并且具有诸如晶体管特性的高的器件特性，所以在使用半导体薄膜作为用于驱动显示器的开关装置的情况下，即使与像素部分重叠，显示面板不会劣化。具体地，通过形成含有氧化锌和氧化铟的非晶体膜然后氧化该膜，使得所得膜的载流子密度为10 + 17cm-3以下，霍尔迁移率为2，制造透明半导体薄膜40 cm2 / V·sec以上，能带隙为2.4EV以上。

4. 发明授权

US07648657B2 In Sm oxide sputtering target 有权
标题翻译：在Sm氧化物溅射靶中
公开(公告)号：US07648657B2
公开(公告)日：2010-01-19
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
发明人： Kazuyoshi Inoue , Nobuo Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
IPC分类号： H01B1/08 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译：溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。相对于所有阳离子元素的总和为％以下。

5. 发明申请

US20090127548A1 SEMICONDUCTOR THIN FILM AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：半导体薄膜及其制造方法
公开(公告)号：US20090127548A1
公开(公告)日：2009-05-21
申请号：US12090731
申请日：2006-08-07
申请人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
发明人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
IPC分类号： H01L29/66 , H01L21/34
CPC分类号： C30B29/06 , C01G15/00 , C01G15/006 , C01P2006/40 , C04B35/01 , C04B2235/3224 , C04B2235/3229 , C04B2235/3286 , C04B2235/6567 , C23C14/086 , C23C14/3414 , C30B29/16 , H01L21/02565 , H01L21/02631 , H01L21/02667
摘要： This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.
摘要翻译：本发明提供了一种透明氧化物半导体，其包括以氧化铟为主要成分的氧化物和氧化铈作为添加剂，并且具有不发生光衍生的故障的特性，因此薄膜的电阻率没有变化通过加热等，迁移率高，以及其制造方法。使用特征在于包含氧化铟和氧化铈并且是结晶并且具有10 + 1至10 +8Ωgmm的电阻率的半导体薄膜。该半导体薄膜的电阻率没有显着变化，迁移率高。因此，可以通过构造使用该半导体薄膜的开关元件来提供具有改善的开关特性的元件。

6. 发明申请

US20090001374A1 Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates 审中-公开
标题翻译： Tft基板，反射Tft基板和制造这些基板的方法
公开(公告)号：US20090001374A1
公开(公告)日：2009-01-01
申请号：US12162545
申请日：2007-01-16
申请人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
发明人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
IPC分类号： H01L21/70 , H01L27/088
CPC分类号： H01L29/78603 , G02F1/133553 , G02F1/1362 , H01L27/1214 , H01L27/1218 , H01L29/7869
摘要： An object of the invention is to propose a TFT substrate and a reflective TFT substrate which can be operated stably for a prolonged period of time, can be prevented from being suffering from crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the number of production steps, as well as to propose the method for producing these substrates.A TFT substrate 1001 comprises: a glass substrate 1010; a gate electrode 1023 and a gate wire 1024 insulated by having their top surfaces covered with a gate insulating film 1030 and by having their side surfaces covered with an interlayer insulating film 1050; an n-type oxide semiconductor layer 1040 formed on the gate insulating film 1030 above the gate electrode 1023; an oxide transparent conductor layer 1060 formed on the n-type oxide semiconductor layer 1040 with a channel part 1044 interposed therebetween; and a channel guard 1500 for protecting the channel part 1044.
摘要翻译：本发明的目的是提出一种能够长时间稳定地操作的TFT基板和反射型TFT基板，可以防止串扰，并且能够通过减少数量来降低制造成本生产步骤，以及提出生产这些基材的方法。 TFT基板1001包括：玻璃基板1010; 栅电极1023和栅极线1024通过使其顶表面被栅极绝缘膜1030覆盖并且通过使它们的侧表面被层间绝缘膜1050覆盖而被绝缘; 形成在栅极电极1023上方的栅极绝缘膜1030上的n型氧化物半导体层1040; 形成在n型氧化物半导体层1040上的氧化物透明导体层1060，其间插入有沟道部1044; 以及用于保护通道部分1044的通道护罩1500。

7. 发明授权

US08030195B2 TFT substrate and method for manufacturing TFT substrate 有权
标题翻译： TFT基板及TFT基板的制造方法
公开(公告)号：US08030195B2
公开(公告)日：2011-10-04
申请号：US12839922
申请日：2010-07-20
申请人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka, legal representative
发明人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , G02F1/136286 , G02F2001/136231 , G02F2001/136236 , G02F2001/13629 , G02F2001/136295 , G02F2201/50 , G02F2203/09 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/45
摘要： An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
摘要翻译：本发明的目的是提供一种TFT基板和TFT基板的制造方法，其能够通过减少制造工序中的工序数和提高生产率而大大降低生产成本。 TFT基板包括：基板; 栅电极和形成在衬底上方的栅极线; 形成在栅极电极和栅极线上方的栅极绝缘膜; 形成在所述栅绝缘膜上方的至少在所述栅电极上方的第一氧化物层; 以及形成在所述第一氧化物层上方的第二氧化物层; 其中至少一个像素电极由第二氧化物层形成。

8. 发明申请

US20100170696A1 SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE 有权
标题翻译：透射目标，透明导电膜和透明电极
公开(公告)号：US20100170696A1
公开(公告)日：2010-07-08
申请号：US12065405
申请日：2006-08-30
申请人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka , Akira Kaijo , Satoshi Umeno
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka , Akira Kaijo , Satoshi Umeno
IPC分类号： H01B5/00 , C23C14/34 , B22F3/12 , H01B13/00 , H01B1/02
CPC分类号： H01B1/02 , C03C17/3644 , C03C2217/94 , C03C2218/33 , C03C2218/34 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B2235/32 , C04B2235/3232 , C04B2235/3241 , C04B2235/3272 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/664 , C04B2235/72 , C04B2235/763 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/086 , C23C14/3414 , H01B13/00 , Y10T428/24777
摘要： A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
摘要翻译：一种溅射靶，其由至少含有铟，锡和锌的氧化物的烧结体构成，并且包括Zn2SnO4的尖晶石结构化合物和In 2 O 3的菱沸石结构化合物。溅射靶包括铟，锡，锌和氧，只有通过X射线衍射（XRD）基本观察到由比克比结构化合物引起的峰。

9. 发明申请

US20100163860A1 SEMICONDUCTOR THIN FILM, METHOD FOR MANUFACTURING THE SAME, THIN FILM TRANSISTOR, AND ACTIVE-MATRIX-DRIVEN DISPLAY PANEL 有权
标题翻译：半导体薄膜，其制造方法，薄膜晶体管和主动矩阵驱动显示面板
公开(公告)号：US20100163860A1
公开(公告)日：2010-07-01
申请号：US12094228
申请日：2006-11-16
申请人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka
IPC分类号： H01L29/26 , H01L21/34
CPC分类号： H01L29/7869 , Y10S977/773
摘要： Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
摘要翻译：公开了即使在柔性树脂基板上也可以在较低温度下形成的半导体薄膜。由于半导体薄膜对于可见光是稳定的并且具有诸如晶体管特性的高的器件特性，所以在使用半导体薄膜作为用于驱动显示器的开关器件的情况下，即使与像素部分重叠，显示面板不会劣化。具体地，通过形成含有氧化锌和氧化铟的非晶体膜，然后氧化该膜，使得所得膜的载流子密度为10 + 17cm-3以下，霍尔迁移率为2，制造透明半导体薄膜40 cm2 / V·sec以上，能带隙为2.4EV以上。

10. 发明申请

US20090308635A1 SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT ELECTRODE FOR TOUCH PANEL 有权
标题翻译：透明导电膜，透明导电膜，触控面板透明电极
公开(公告)号：US20090308635A1
公开(公告)日：2009-12-17
申请号：US12088027
申请日：2006-09-25
申请人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka , Yukio Shimane
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka , Yukio Shimane
IPC分类号： H01B1/02 , C23C14/34
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B35/62645 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/763 , C04B2235/767 , C23C14/086
摘要： A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In2O3(ZnO)m, wherein m is an integer of 3 to 9, and a spinel structure compound shown by Zn2SnO4.
摘要翻译：一种溅射靶，其由以铟，锡和锌为主要成分的氧化物的烧结体组成; In /（In + Sn + Zn）的原子比为0.10〜0.35; Sn /（In + Sn + Zn）的原子比为0.15〜0.35; Zn /（In + Sn + Zn）的原子比为0.50〜0.70; 并含有In2O3（ZnO）m所示的六方层状化合物，m为3〜9的整数，Zn2SnO4所示的尖晶石结构化合物。

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