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1. 发明申请

US20140030510A1 VAPOR-DEPOSITED FILM HAVING BARRIER PERFORMANCE 有权
标题翻译：具有障碍物性能的蒸汽沉积膜
公开(公告)号：US20140030510A1
公开(公告)日：2014-01-30
申请号：US14008321
申请日：2012-03-29
申请人： Shigeto Kimura , Tooru Hachisuka , Koji Yamauchi , Shigenobu Yoshida
发明人： Shigeto Kimura , Tooru Hachisuka , Koji Yamauchi , Shigenobu Yoshida
IPC分类号： B65D65/42 , B05D1/00
CPC分类号： B65D65/42 , B05D1/00 , C23C14/022 , C23C14/10 , C23C14/562 , C23C14/584 , Y10T428/265
摘要： Such a vapor-deposited barrier film is provided that has a vapor-deposited layer having uniform film quality, a high film density and high barrier performance in the initial stage. The vapor-deposited barrier film contains a substrate having on at least one surface thereof at least one layer of a vapor-deposited layer (a). The vapor-deposited layer (a) contains a metal oxide, has a thickness of from 10 to 500 nm, and has an average value of an elemental ratio of oxygen (O) and the metal (oxygen (O)/metal) of 1.20 or more and 1.90 or less and a difference between the maximum value and the minimum value of the (oxygen (O)/metal) of 0.35 or less on analysis of the vapor-deposited layer in the depth direction thereof by an X-ray photoelectron spectroscopy (ESCA) method.
摘要翻译：提供这样的蒸镀阻挡膜，其具有在初始阶段具有均匀膜质量，高膜密度和高阻隔性能的气相沉积层。气相沉积阻挡膜含有在其至少一个表面上具有至少一层蒸镀层（a）的基板。蒸镀层（a）含有金属氧化物，其厚度为10〜500nm，氧（O）和金属（氧（O）/金属）的元素比的平均值为1.20 以上且1.90以下，并且通过X射线光电子在其深度方向分析气相沉积层时，（氧（O）/金属）的最大值和最小值之间的差为0.35以下光谱学（ESCA）法。

2. 发明授权

US09650191B2 Vapor-deposited film having barrier performance 有权
公开(公告)号：US09650191B2
公开(公告)日：2017-05-16
申请号：US14008321
申请日：2012-03-29
申请人： Shigeto Kimura , Tooru Hachisuka , Koji Yamauchi , Shigenobu Yoshida
发明人： Shigeto Kimura , Tooru Hachisuka , Koji Yamauchi , Shigenobu Yoshida
IPC分类号： B65D65/42 , B05D1/00 , C23C14/10 , C23C14/56 , C23C14/58 , C23C14/02
CPC分类号： B65D65/42 , B05D1/00 , C23C14/022 , C23C14/10 , C23C14/562 , C23C14/584 , Y10T428/265
摘要： Such a vapor-deposited barrier film is provided that has a vapor-deposited layer having uniform film quality, a high film density and high barrier performance in the initial stage. The vapor-deposited barrier film contains a substrate having on at least one surface thereof at least one layer of a vapor-deposited layer (a). The vapor-deposited layer (a) contains a metal oxide, has a thickness of from 10 to 500 nm, and has an average value of an elemental ratio of oxygen (O) and the metal (oxygen (O)/metal) of 1.20 or more and 1.90 or less and a difference between the maximum value and the minimum value of the (oxygen (O)/metal) of 0.35 or less on analysis of the vapor-deposited layer in the depth direction thereof by an X-ray photoelectron spectroscopy (ESCA) method.

3. 发明申请

US20130295359A1 GAS-BARRIER LAMINATE FILM 审中-公开
标题翻译：气体屏障层压膜
公开(公告)号：US20130295359A1
公开(公告)日：2013-11-07
申请号：US13883247
申请日：2011-11-02
申请人： Koji Yamauchi , Shigenobu Yoshida , Tooru Hachisuka , Shigeto Kimura
发明人： Koji Yamauchi , Shigenobu Yoshida , Tooru Hachisuka , Shigeto Kimura
IPC分类号： H05K5/02
CPC分类号： H05K5/0213 , C23C14/10 , C23C16/30 , Y10T428/24975
摘要： Provided are a gas-barrier laminate film which shows good productivity, has high transparency, exhibits high-level gas-barrier properties and has excellent adhesion strength between the constituent layers therein, and which curls little; and a method for producing the film. The gas-barrier laminate film has, on at least one surface of a substrate film thereof, an inorganic thin layer formed by a vacuum vapor deposition, an inorganic thin layer formed by a chemical vapor deposition, and an inorganic thin layer formed by a vacuum vapor deposition in that order thereon, wherein the thickness of the inorganic thin layer formed by vacuum vapor deposition is from 0.1 nm to 500 nm, and the carbon content in the inorganic thin layer formed by chemical vapor deposition is from 0.5 at % to less than 20 at %, and the thickness of the layer is less than 20 nm.
摘要翻译：提供一种阻气性层压膜，其显示出良好的生产率，高透明度，显示高水平的阻气性，并且其中各组成层之间具有优异的粘合强度，并且几乎不卷曲; 以及该膜的制造方法。阻气层压膜在其基材膜的至少一个表面上具有通过真空气相沉积形成的无机薄层，通过化学气相沉积形成的无机薄层和通过真空形成的无机薄层在其上进行气相沉积，其中通过真空气相沉积形成的无机薄层的厚度为0.1nm至500nm，并且通过化学气相沉积形成的无机薄层中的碳含量为0.5at％至小于 20原子％，层的厚度小于20nm。

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