会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Image pickup module with improved flatness of image sensor and via electrodes
    • 图像拾取模块,具有改善图像传感器和通孔电极的平面度
    • US08823872B2
    • 2014-09-02
    • US13212935
    • 2011-08-18
    • Koji TsudukiShin HasegawaTadashi KosakaYasuhiro MatsukiTakanori SuzukiAkiya Nakayama
    • Koji TsudukiShin HasegawaTadashi KosakaYasuhiro MatsukiTakanori SuzukiAkiya Nakayama
    • H04N5/225
    • H01L27/14618H01L27/14636H01L2224/13H04N5/2253
    • An image pickup module includes a cover member, an image pickup device chip including photodiodes, a fixing member which is arranged around the image pickup device chip and which connects the cover member and the image pickup device chip together, a rewiring substrate arranged on the side opposite to the cover member of the image pickup device chip, connection members for connecting the image pickup device chip with the rewiring substrate, and a space surrounded by the cover member, the image pickup device chip, and the fixing member. The image pickup device chip includes a semiconductor substrate. The semiconductor substrate includes through-hole electrodes penetrating the substrate. When an area corresponding to the fixing member in the orthogonal projection of the image pickup module with respect to the cover module is defined as a fixed area, the through-hole electrodes and the connection members are arranged in the fixed area.
    • 图像拾取模块包括盖构件,包括光电二极管的图像拾取装置芯片,布置在图像拾取装置芯片周围并将盖构件和图像拾取装置芯片连接在一起的固定构件,布置在侧面的重新布线基板 与图像拾取装置芯片的盖构件相对的连接构件,用于将图像拾取装置芯片与重新布线基板连接的连接构件以及由盖构件,图像拾取装置芯片和固定构件包围的空间。 图像拾取器件芯片包括半导体衬底。 半导体衬底包括穿透衬底的通孔电极。 当将图像拾取模块相对于盖模块的正交投影中的固定构件对应的区域定义为固定区域时,通孔电极和连接构件布置在固定区域中。
    • 3. 发明申请
    • IMAGE PICKUP MODULE AND CAMERA
    • 图像拾取模块和摄像机
    • US20120044415A1
    • 2012-02-23
    • US13212935
    • 2011-08-18
    • Koji TsudukiShin HasegawaTadashi KosakaYasuhiro MatsukiTakanori SuzukiAkiya Nakayama
    • Koji TsudukiShin HasegawaTadashi KosakaYasuhiro MatsukiTakanori SuzukiAkiya Nakayama
    • H04N5/225H01L27/146
    • H01L27/14618H01L27/14636H01L2224/13H04N5/2253
    • An image pickup module includes a cover member, an image pickup device chip including photodiodes, a fixing member which is arranged around the image pickup device chip and which connects the cover member and the image pickup device chip together, a rewiring substrate arranged on the side opposite to the cover member of the image pickup device chip, connection members for connecting the image pickup device chip with the rewiring substrate, and a space surrounded by the cover member, the image pickup device chip, and the fixing member. The image pickup device chip includes a semiconductor substrate. The semiconductor substrate includes through-hole electrodes penetrating the substrate. When an area corresponding to the fixing member in the orthogonal projection of the image pickup module with respect to the cover module is defined as a fixed area, the through-hole electrodes and the connection members are arranged in the fixed area.
    • 图像拾取模块包括盖构件,包括光电二极管的图像拾取装置芯片,布置在图像拾取装置芯片周围并将盖构件和图像拾取装置芯片连接在一起的固定构件,布置在侧面的重新布线基板 与图像拾取装置芯片的盖构件相对的连接构件,用于将图像拾取装置芯片与重新布线基板连接的连接构件以及由盖构件,图像拾取装置芯片和固定构件包围的空间。 图像拾取器件芯片包括半导体衬底。 半导体衬底包括穿透衬底的通孔电极。 当将图像拾取模块相对于盖模块的正交投影中的固定构件对应的区域定义为固定区域时,通孔电极和连接构件布置在固定区域中。
    • 10. 发明授权
    • Back reflector layer, method for forming it, and photovoltaic element
using it
    • 背反射层,其形成方法和使用它的光电元件
    • US5620530A
    • 1997-04-15
    • US515296
    • 1995-08-15
    • Akiya Nakayama
    • Akiya Nakayama
    • H01L31/04H01L31/0236H01L31/0392H01L31/052H01L31/18H01L31/20C23C14/34
    • H01L31/0236H01L31/03921H01L31/056H01L31/1884H01L31/206Y02E10/52Y02P70/521
    • An object of the present invention is to provide a back reflector layer having a texture structure with a high reflectivity by preventing oxidation of a metal or alloy base layer, and a method for forming it. A further object is to provide a photovoltaic element with excellent characteristics such as a conversion efficiency, and a process for fabricating it. The back reflector layer has a metal or alloy (hereinafter referred to as a first metal) base layer, and a transparent oxide of a second metal, formed on the first metal. A photovoltaic element is formed by forming a semiconductor junction on the back reflector layer. In the back reflector layer and the photovoltaic element, the electron affinity of the second metal is at least 0.46 eV smaller than that of the first metal, and the transparent oxide is formed by a sputtering method in an atmosphere comprising at least H.sub.2 O and an inert gas and with a target having a composition ratio of the second metal of 1.06 to 1.2 times the stoichiometric composition thereof.
    • 本发明的目的是提供一种通过防止金属或合金基层的氧化而具有具有高反射率的织构结构的背反射层及其形成方法。 另一个目的是提供一种具有优异特性的转换效率的光电元件及其制造方法。 后反射层在第一金属上形成有金属或合金(以下称为第一金属)基层和第二金属的透明氧化物。 通过在后反射层上形成半导体结形成光电元件。 在后反射层和光电元件中,第二金属的电子亲和力比第一金属的电子亲和力小至少为0.46eV,透明氧化物通过溅射法在至少包含H 2 O和惰性的气氛中形成 气体并且具有第二金属的组成比为其化学计量组成的1.06至1.2倍的靶。