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1. 发明申请

US20110038236A1 Near-Field Light Transducer Comprising Propagation Edge With Predetermined Curvature Radius 有权
标题翻译：近场光传感器包括具有预定曲率半径的传播边
公开(公告)号：US20110038236A1
公开(公告)日：2011-02-17
申请号：US12540752
申请日：2009-08-13
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B11/00 , G11B5/02
CPC分类号： G11B5/314 , G11B5/6088 , G11B2005/001
摘要： Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir.
摘要翻译：提供了具有传播边缘的近场光传感器，其中抑制了缺陷的产生。传感器由Ag合金形成并且包括边缘，边缘包括要与表面等离子体激元模式的光耦合的部分，边缘从该部分延伸到近场光产生端表面，并且该边缘是配置为传播由光激发的表面等离子体激元。此外，圆角边缘的曲率半径设定在6.25nm至20nm的范围内。在边缘及其附近，抑制诸如破裂和碎裂的缺陷的产生。从而改进了表面等离子体激元的传播效率和传感器的光利用效率。 Ag合金优选含有选自Pd，Au，Cu，Ru，Rh和Ir中的至少一种元素。

2. 发明授权

US07782575B2 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer 有权
标题翻译：具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
公开(公告)号：US07782575B2
公开(公告)日：2010-08-24
申请号：US11698180
申请日：2007-01-26
申请人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/59683 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Ω·Ω·cm 2，间隔层的导电率为133〜432S / cm。

3. 发明授权

US07672092B2 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
标题翻译：利用金属扩散制造磁场检测元件的方法
公开(公告)号：US07672092B2
公开(公告)日：2010-03-02
申请号：US11708537
申请日：2007-02-21
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/12 , Y10T428/1121
摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.
摘要翻译：一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或由其合金。

4. 发明授权

US07672085B2 CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system 有权
标题翻译：具有半导体氧化物间隔层和磁盘系统的CPP型磁阻效应器件
公开(公告)号：US07672085B2
公开(公告)日：2010-03-02
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3）制成，或者半导体氧化物层包含氧化铟（In 2 O 3）作为其主要成分，并且包含含有SnO 4的四价阳离子的氧化物作为主要成分的氧化铟。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

5. 发明申请

US20090067099A1 Magnetoresistive element including layered film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括层间膜接触间隔层的周边
公开(公告)号：US20090067099A1
公开(公告)日：2009-03-12
申请号：US11898335
申请日：2007-09-11
申请人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.
摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。磁阻元件还包括接触间隔层的周边的层状膜。间隔层包括使用氧化物半导体作为材料形成的半导体层。层叠膜包括依次堆叠的第一层，第二层和第三层。第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。第三层是绝缘层。

6. 发明申请

US20080100968A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080100968A1
公开(公告)日：2008-05-01
申请号：US11870097
申请日：2007-10-10
申请人： Koji SHIMAZAWA , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji SHIMAZAWA , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3272 , H01F41/305 , Y10T29/49044 , Y10T29/49048
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The free layer functions such that the direction of magnetization changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer. It is thus possible to achieve very favorable advantages of obtaining high MR performance without increasing the head noise, and holding back variations of device's area resistivity (AR), thereby making much more improvements in the reliability of film characteristics.
摘要翻译：本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，以及固定磁化层和自由层，间隔层介于它们具有沿堆叠方向施加的感测电流。自由层起着使得磁化方向取决于外部磁场的作用。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。半导体层是n型氧化物半导体。当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一和半导体层之间形成抗氧化层。抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。因此，可以获得非常有利的优点，即不增加磁头噪声，并且抑制器件面积电阻率（AR）的变化，从而在膜特性的可靠性方面进一步提高，从而获得高MR性能。

7. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

8. 发明授权

US08085512B2 CPP-type magnetoresistance effect element having a pair of free layers 有权
标题翻译： CPP型磁阻效应元件具有一对自由层
公开(公告)号：US08085512B2
公开(公告)日：2011-12-27
申请号：US12045927
申请日：2008-03-11
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.
摘要翻译：磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。

9. 发明授权

US07881025B2 Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
标题翻译：具有介于第一和第二非磁性金属层之间的半导体层的间隔层的磁阻效应器件和用于可用于硬盘系统中的头部万向节组件中的薄膜磁头的功函数控制层
公开(公告)号：US07881025B2
公开(公告)日：2011-02-01
申请号：US11931219
申请日：2007-10-31
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/306 , H01L43/08
摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.
摘要翻译：本发明提供一种包括间隔层的CPP-GMR装置。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。因此可以获得更多改进的优点。

10. 发明申请

US20100097722A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20100097722A1
公开(公告)日：2010-04-22
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/48 , G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译：在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有由至少一种选自以下的金属元素所赋予的掺杂剂：的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

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