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    • 7. 发明申请
    • PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE
    • 光电转换元件,光电转换元件组件和光电转换模块
    • US20110057283A1
    • 2011-03-10
    • US12674967
    • 2008-07-25
    • Akiko TsunemiSatoshi Okamoto
    • Akiko TsunemiSatoshi Okamoto
    • H01L31/042H01L31/04
    • H01L31/022425H01L31/02245H01L31/068Y02E10/547
    • To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer brought into contact with the first semiconductor layer and arranged at least in part on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided so as to be electrically connected to the second semiconductor layer on its light-receiving side; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the photoelectric conversion element.
    • 提供一种光电转换元件,其允许通过廉价的布线构件连接相邻的光电转换元件。 本发明的光电转换元件包括:第一导电类型的第一半导体层; 布置在所述第一半导体层的背侧并电连接到所述第一半导体层的第一电极; 第二导电类型的第二半导体层,第二半导体层与第一半导体层接触并且至少部分地布置在第一半导体层的光接收侧上; 光接收面侧电极,被设置为与其受光侧的第二半导体层电连接; 布置在所述第一半导体层的背面上并与所述第一半导体层电分离但电连接到所述第二半导体层的第二电极; 以及穿透所述第一半导体层的穿透连接部,与所述第一半导体层电分离,但是将所述受光面侧电极与所述第二电极电连接,所述光电转换元件的特征在于,所述第一电极和 第二电极与通过光电转换元件的中心的中心轴线等距离设置。
    • 8. 发明申请
    • Method for Forming Multi-Layer Coating Film
    • 多层涂膜的形成方法
    • US20090266714A1
    • 2009-10-29
    • US11887587
    • 2006-04-07
    • Toshio KanekoSatoshi OkamotoMasanobu FutsuharaMakoto DoiEisaku OkadaTakehiro Nito
    • Toshio KanekoSatoshi OkamotoMasanobu FutsuharaMakoto DoiEisaku OkadaTakehiro Nito
    • C09D5/44C25D9/12
    • C25D13/22C09D5/4492
    • The present invention is to provide a method for forming a multi-layer coating film, which can combine a pre-treating step conducted for a metal substrate, before electrodeposition coating, and an electrodeposition coating step. The method comprises: a step of dipping a material to be coated in an aqueous coating composition comprising (A) a rare earth metal compound, (B) a base resin having a cationic group, and (C) a curing agent, wherein a content of the rare earth metal compound (A) in the aqueous coating composition is limited to specific range; a pre-treating step of applying a voltage of less than 50 V in the aqueous coating composition, wherein the material to be coated is used as a cathode; and an electrodeposition coating of applying a voltage of 50 to 450 V in the aqueous coating composition, wherein the material to be coated is used as a cathode.
    • 本发明提供一种形成多层涂膜的方法,其可以在电沉积涂覆之前组合对金属基材进行的预处理步骤和电沉积涂布步骤。 该方法包括:将待涂覆的材料浸渍在包含(A)稀土金属化合物,(B)具有阳离子基团的基础树脂和(C)固化剂)的水性涂料组合物中,其中含量 的水性涂料组合物中的稀土金属化合物(A)被限制在特定范围内; 在水性涂料组合物中施加小于50V的电压的预处理步骤,其中待涂覆的材料用作阴极; 以及在水性涂料组合物中施加50-450V的电压的电沉积涂层,其中待涂覆的材料用作阴极。