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1. 发明申请

US20050205515A1 Process for producing structural body and etchant for silicon oxide film 有权
标题翻译：用于生产氧化硅膜结构体和蚀刻剂的方法
公开(公告)号：US20050205515A1
公开(公告)日：2005-09-22
申请号：US11011111
申请日：2004-12-15
申请人： Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
发明人： Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
IPC分类号： H01L21/306 , B81B3/00 , B81C1/00 , C09K13/08 , H01L21/304 , H01L21/308 , H01L21/31 , H01L29/84 , H01L21/302 , B44C1/22
CPC分类号： B81C1/00849 , B81C2201/117
摘要： A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.
摘要翻译：一种结构体，包括通过空气间隙形成在基底上的结构层，其中结构层用作微型可移动元件，是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的氧化膜和基板上的结构层，气隙形成步骤，通过用处理流体蚀刻去除牺牲层，以在基板和结构层之间形成气隙，以及清洁步骤。通过使用含有氟化合物，水溶性有机溶剂和水作为处理液的超临界二氧化碳流体，在短时间内用少量的处理流体去除牺牲层，而不会对结构造成任何损害身体。

2. 发明授权

US07670496B2 Process for producing structural body and etchant for silicon oxide film 有权
标题翻译：用于生产氧化硅膜结构体和蚀刻剂的方法
公开(公告)号：US07670496B2
公开(公告)日：2010-03-02
申请号：US11011111
申请日：2004-12-15
申请人： Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
发明人： Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
IPC分类号： H01L21/302
CPC分类号： B81C1/00849 , B81C2201/117
摘要： A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.
摘要翻译：一种结构体，包括通过空气间隙形成在基底上的结构层，其中结构层用作微型可移动元件，是通过包括依次形成由硅制成的牺牲层的成膜步骤的方法制造的氧化膜和基板上的结构层，气隙形成步骤，通过用处理流体蚀刻去除牺牲层，以在基板和结构层之间形成气隙，以及清洁步骤。通过使用含有氟化合物，水溶性有机溶剂和水作为处理液的超临界二氧化碳流体，在短时间内用少量的处理流体去除牺牲层，而不会对结构造成任何损害身体。

3. 发明申请

US20090221143A1 METHOD OF CLEANING AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：清洁方法和生产半导体器件的方法
公开(公告)号：US20090221143A1
公开(公告)日：2009-09-03
申请号：US12066103
申请日：2006-09-05
申请人： Koichiro Saga , Kenji Yamada , Tomoyuki Azuma , Yuji Murata
发明人： Koichiro Saga , Kenji Yamada , Tomoyuki Azuma , Yuji Murata
IPC分类号： H01L21/3205 , H01L21/306 , C11D7/32
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/76814 , H01L21/76883 , Y10S438/906
摘要： A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.
摘要翻译：一种用于去除附着在基材表面上的金属化合物的清洗方法，其中通过将包含三烯丙基胺和三（3-氨基丙基）胺中的至少一种的二氧化碳的超临界流体供应到基材的表面进行清洗，提供了使用清洗方法制造半导体器件的方法。根据使用该方法的清洗方法和制造半导体器件的方法，从形成导电层的导电材料中选择性地有效地除去含有金属化合物的残留物或抛光残渣。当导电层是布线时，可以抑制由于残留的金属化合物引起的电阻的增加，并且可以防止由金属从金属化合物扩散到绝缘膜的漏电流的增加。因此，能够提高布线的可靠性，能够提高半导体装置的收率。

4. 发明授权

US07767585B2 Method of cleaning and process for producing semiconductor device 有权
标题翻译：用于制造半导体器件的清洁和处理方法
公开(公告)号：US07767585B2
公开(公告)日：2010-08-03
申请号：US12066103
申请日：2006-09-05
申请人： Koichiro Saga , Kenji Yamada , Tomoyuki Azuma , Yuji Murata
发明人： Koichiro Saga , Kenji Yamada , Tomoyuki Azuma , Yuji Murata
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/76814 , H01L21/76883 , Y10S438/906
摘要： A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.
摘要翻译：一种用于去除附着在基材表面上的金属化合物的清洗方法，其中通过将包含三烯丙基胺和三（3-氨基丙基）胺中的至少一种的二氧化碳的超临界流体供应到基材的表面进行清洗，提供了使用清洗方法制造半导体器件的方法。根据使用该方法的清洗方法和制造半导体器件的方法，从形成导电层的导电材料中选择性地有效地除去含有金属化合物的残留物或抛光残渣。当导电层是布线时，可以抑制由于残留的金属化合物引起的电阻的增加，并且可以防止由金属从金属化合物扩散到绝缘膜的漏电流的增加。因此，能够提高布线的可靠性，能够提高半导体装置的收率。

5. 发明授权

US08765002B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08765002B2
公开(公告)日：2014-07-01
申请号：US13409879
申请日：2012-03-01
申请人： Tomoyuki Azuma , Kenji Yamada , Hiroyuki Araki , Koji Ando
发明人： Tomoyuki Azuma , Kenji Yamada , Hiroyuki Araki , Koji Ando
IPC分类号： C03C15/00
CPC分类号： H01L21/67075 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67167 , H01L21/67253
摘要： A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.
摘要翻译：基板处理装置包括第一处理室和第二处理室，第一处理室中保持基板的第一基板保持单元，向所述第一处理室供给含有蚀刻成分和增稠剂的化学溶液的化学溶液供给单元，由第一基板保持单元保持的基板，在将化学溶液保持在基板上的状态下将基板从第一处理室转移到第二处理室的基板转印单元，多个基板，每个基板上的化学溶液保持在第二处理室中。

6. 发明申请

US20090114619A1 WET ETCHING METHOD AND WET ETCHING APPARATUS 审中-公开
标题翻译：湿蚀刻方法和湿蚀刻装置
公开(公告)号：US20090114619A1
公开(公告)日：2009-05-07
申请号：US12094103
申请日：2006-11-17
申请人： Ryuji Sotoaka , Keiichi Tanaka , Tomoyuki Azuma
发明人： Ryuji Sotoaka , Keiichi Tanaka , Tomoyuki Azuma
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： C23F1/02 , C23F1/18 , C23F1/38 , H01J9/025 , H01J9/148 , H01J31/127 , H01L21/32134 , H01L21/67086 , H01L21/67115
摘要： A fine pattern is formed on a surface of a processing object without using photoresist. A wet etching for the processing object in an area to which ultraviolet light is applied is performed by bringing a solution in which nitrous oxide (N2O) is dissolved into contact with the processing object and applying the ultraviolet light to the solution in a vicinity of an area to the processing object other than portions shielded with a mask whereupon a light shielding pattern is formed.
摘要翻译：在不使用光致抗蚀剂的情况下，在加工对象的表面上形成精细图案。在施加紫外线的区域中的处理对象的湿法蚀刻是通过使其中溶解有一氧化二氮（N 2 O）的溶液与处理对象接触并将紫外光施加到溶液附近的除了形成有屏蔽图案的掩模之外的除了部分之外的处理对象的区域。

7. 发明申请

US20080047577A1 Substrate Cleaning Device and Cleaning Method Thereof 审中-公开
标题翻译：基材清洗装置及其清洗方法
公开(公告)号：US20080047577A1
公开(公告)日：2008-02-28
申请号：US11849857
申请日：2007-09-04
申请人： Hideto Goto , Kenji Furusawa , Satoshi Joya , Ryuji Sotoaka , Keiichi Tanaka , Yoshiya Kimura , Tomoyuki Azuma
发明人： Hideto Goto , Kenji Furusawa , Satoshi Joya , Ryuji Sotoaka , Keiichi Tanaka , Yoshiya Kimura , Tomoyuki Azuma
IPC分类号： B08B3/12
CPC分类号： B08B7/0035 , B08B3/10 , H01L21/02052 , H01L21/67051 , H01L21/67115
摘要： A substrate cleaning device includes a rotating table that rotatably holds a silicon substrate. A light irradiation device is capable of irradiating at least a portion of a surface of the held silicon substrate with light. A nozzle is capable of selectively supplying at least N2O water and a hydrofluoric acid solution onto the substrate. A control unit controls the supply of the light irradiation device and the nozzle and enables light irradiation by the light irradiation device when the N2O water is supplied onto the silicon substrate.
摘要翻译：一种基板清洁装置，包括可旋转地保持硅基板的旋转台。光照射装置能够用光照射被保持的硅衬底的表面的至少一部分。喷嘴能够选择性地将至少N 2 O 2 O水和氢氟酸溶液供应到基底上。控制单元控制光照射装置和喷嘴的供给，并且当N 2 O 2水被供应到硅基板上时，能够通过光照射装置进行光照射。

8. 发明申请

US20070175862A1 Anisotropic etching agent composition used for manufacturing of micro-structures of silicon and etching method 审中-公开
标题翻译：用于制造硅微结构的各向异性蚀刻剂组合物和蚀刻方法
公开(公告)号：US20070175862A1
公开(公告)日：2007-08-02
申请号：US11201227
申请日：2005-08-11
申请人： Kenji Yamada , Tomoyuki Azuma
发明人： Kenji Yamada , Tomoyuki Azuma
IPC分类号： C09K13/00 , C09K13/06 , B44C1/22 , H01L29/00
CPC分类号： C09K13/02 , B81C1/00595 , H01L21/30608
摘要： An anisotropic etching agent composition for manufacturing of micro-structures of silicon comprising an alkali compound and hydroxylamines; an anisotropic etching method with the use of the etching agent composition. The alkali compound is preferably tetramethylammonium hydroxide, and the hydroxylamines is preferably at least one kind selected from the group consisting of hydroxylamine, hydroxylamine sulfate, hydroxylamine chloride, hydroxylamine oxalate, dimethyl hydroxylamine hydrochloride and hydroxylamine phosphate. An anisotropic etching property whose etching rate is different in crystal face orientation especially relating with etching technology with the use of manufacturing of micro-structures of silicon used as Micro Electro Mechanical Systems (MEMS) parts, semiconductor materials, etc is provided.
摘要翻译：一种用于制造包含碱性化合物和羟胺的硅微结构的各向异性蚀刻剂组合物; 使用蚀刻剂组合物的各向异性蚀刻方法。碱性化合物优选为氢氧化四甲基铵，羟胺优选为选自羟胺，硫酸羟胺，羟胺氯化物，草酸羟胺，二甲基羟胺盐酸盐和磷酸羟胺中的至少一种。提供了使用微机电系统（MEMS）部件，半导体材料等的微结构的微结构的制造，蚀刻速率在晶面取向上特别是与蚀刻技术有关的各向异性蚀刻性质。

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