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1. 发明授权

US5773156A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5773156A
公开(公告)日：1998-06-30
申请号：US591350
申请日：1996-01-25
申请人： Koichiro Inomata , Keiichiro Yusu , Roger Highmore , Shiho Okuno , Yoshiaki Saito
发明人： Koichiro Inomata , Keiichiro Yusu , Roger Highmore , Shiho Okuno , Yoshiaki Saito
IPC分类号： H01L43/10 , H01F10/12 , H01F1/00
CPC分类号： H01L43/10 , H01F1/0063 , Y10T428/12014 , Y10T428/12465 , Y10T428/12528 , Y10T428/12674
摘要： A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.
摘要翻译：磁阻效应元件包括通过将含有选自Fe，Co和Ni中的至少一种磁性元素的磁性金属颗粒分散在半导体基体中而获得的磁体。

2. 发明授权

US5585196A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5585196A
公开(公告)日：1996-12-17
申请号：US208600
申请日：1994-03-11
申请人： Koichiro Inomata , Yoshinori Takahashi , Shiho Okuno , Yoshiaki Saito , Keiichiro Yusu
发明人： Koichiro Inomata , Yoshinori Takahashi , Shiho Okuno , Yoshiaki Saito , Keiichiro Yusu
IPC分类号： G01R33/09 , H01F10/00 , H01F10/32 , H01L43/10 , G11B5/127 , G11B5/66 , G11B5/70 , H01F1/00
CPC分类号： B82Y25/00 , G01R33/093 , H01F10/007 , H01F10/3227 , H01L43/10 , Y10S428/90 , Y10T428/1129 , Y10T428/12097 , Y10T428/12118 , Y10T428/12465 , Y10T428/12493 , Y10T428/12882 , Y10T428/1291 , Y10T428/265 , Y10T428/2982
摘要： There is disclosed a magnetoresistance effect element including a multilayer constituted by a magnetic layers in which fine magnetic metal particles of crystalline or amorphous containing at least one element of Fe, Co, and Ni are dispersed in a matrix containing at least one element selected from the group consisting of noble metals and Cu, and non-magnetic layers containing a noble metal.
摘要翻译：公开了一种磁电阻效应元件，其包括由磁性层构成的多层，其中含有Fe，Co和Ni的至少一种元素的结晶或无定形的细磁性金属颗粒分散在含有至少一种选自由贵金属和Cu组成的组以及含有贵金属的非磁性层。

3. 发明授权

US5723978A Photo-inducible magnetic exchange coupling device 失效
标题翻译：光诱导磁交换耦合器件
公开(公告)号：US5723978A
公开(公告)日：1998-03-03
申请号：US392523
申请日：1995-02-23
申请人： Koichiro Inomata , Roger Highmore , Keiichiro Yusu , Yoshinori Takahashi
发明人： Koichiro Inomata , Roger Highmore , Keiichiro Yusu , Yoshinori Takahashi
IPC分类号： G01J1/42 , G01R33/00 , G01R33/038 , G01R33/12 , G03G5/16 , G11B5/00 , G11B5/33 , G11B11/00 , G11B11/105 , G11B13/04 , H01F7/04 , H01F10/00 , H01F10/32 , H01L43/08
CPC分类号： G01Q60/50 , B82Y10/00 , B82Y15/00 , B82Y25/00 , B82Y35/00 , G01J1/42 , G01R33/0385 , G03G5/16 , G11B11/007 , G11B11/10502 , G11B11/10584 , G11B11/10586 , G11B5/00 , G11B5/332 , H01F10/3254
摘要： A magnetic device, comprises a first magnetic layer; a second magnetic layer on the magnetic layer and having a coercive force smaller than that of the first magnetic layer; a semiconductor layer between the first and second magnetic layers so that photo-induced magnetism occurs between the first and second magnetic layers when the semiconductor layer is irradiated with light, a third magnetic layer on the second magnetic layer, the third magnetic layer having a coercive force larger than the coercive force of the second magnetic layer, and a second semiconductor layer between the second and third magnetic layers, magnetism being induced between the second and third magnetic layers when the second semiconductor layer is irradiated with light.
摘要翻译：一种磁性装置，包括第一磁性层; 磁性层上的第二磁性层，其矫顽力小于第一磁性层的矫顽力; 在第一和第二磁性层之间的半导体层，使得当半导体层被照射时在第一和第二磁性层之间发生光致磁化，第二磁性层上的第三磁性层，具有矫顽力的第三磁性层强度大于第二磁性层的矫顽力，第二和第三磁性层之间的第二半导体层，当第二半导体层被照射时，在第二和第三磁性层之间感应磁性。

4. 发明授权

US5534355A Artificial multilayer and method of manufacturing the same 失效
标题翻译：人造多层及其制造方法
公开(公告)号：US5534355A
公开(公告)日：1996-07-09
申请号：US424082
申请日：1995-04-19
申请人： Shiho Okuno , Susumu Hashimoto , Keiichiro Yusu , Koichiro Inomata
发明人： Shiho Okuno , Susumu Hashimoto , Keiichiro Yusu , Koichiro Inomata
IPC分类号： C22C45/02 , C23C14/34 , G11B5/39 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/26 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/10 , G11B5/66 , B32B15/01
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3281 , H01F41/302 , H01L43/10 , G11B5/3903 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12632 , Y10T428/12819 , Y10T428/12854 , Y10T428/12861 , Y10T428/12889 , Y10T428/12903 , Y10T428/12944 , Y10T428/12951 , Y10T428/24942 , Y10T428/265
摘要： Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要翻译：公开了一种人造层叠体，其中交替地层叠铁磁性层和非磁性层，其中沿预定方向将单轴磁各向异性引入到铁磁层中，从而控制电阻率相对于外部磁场变化的梯度。在形成铁磁层期间，通过在铁磁层的表面施加磁场，将单轴磁各向异性引入铁磁层。

5. 发明授权

US5616370A Artificial multilayer and method of manufacturing the same 失效
标题翻译：人造多层及其制造方法
公开(公告)号：US5616370A
公开(公告)日：1997-04-01
申请号：US636460
申请日：1996-04-23
申请人： Shiho Okuno , Susumu Hashimoto , Keiichiro Yusu , Koichiro Inomata
发明人： Shiho Okuno , Susumu Hashimoto , Keiichiro Yusu , Koichiro Inomata
IPC分类号： C22C45/02 , C23C14/34 , G11B5/39 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/26 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/10 , G11B5/852
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3281 , H01F41/302 , H01L43/10 , G11B5/3903 , Y10S428/90 , Y10S428/928 , Y10T428/1129 , Y10T428/12632 , Y10T428/12819 , Y10T428/12854 , Y10T428/12861 , Y10T428/12889 , Y10T428/12903 , Y10T428/12944 , Y10T428/12951 , Y10T428/24942 , Y10T428/265
摘要： Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要翻译：公开了一种人造层叠体，其中交替地层叠铁磁性层和非磁性层，其中沿预定方向将单轴磁各向异性引入到铁磁层中，从而控制电阻率相对于外部磁场变化的梯度。在形成铁磁层期间，通过在铁磁层的表面施加磁场，将单轴磁各向异性引入铁磁层。

6. 发明授权

US6114056A Magnetic element, and magnetic head and magnetic memory device using thereof 失效
标题翻译：磁性元件，以及使用其的磁头和磁存储器件
公开(公告)号：US6114056A
公开(公告)日：2000-09-05
申请号：US074588
申请日：1998-05-08
申请人： Koichiro Inomata , Yoshiaki Saito , Katsutaro Ichihara , Keiichiro Yusu , Hideo Ogiwara
发明人： Koichiro Inomata , Yoshiaki Saito , Katsutaro Ichihara , Keiichiro Yusu , Hideo Ogiwara
IPC分类号： G11B5/39 , G11C11/16 , G11C11/56 , H01F10/32 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11C11/16 , G11C11/5607 , H01F10/3227 , H01F10/3254 , H01L43/08 , G11B2005/3996 , G11C2211/5615 , Y10S428/90 , Y10T428/1114 , Y10T428/12111
摘要： A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.
摘要翻译：磁性元件包括粒状磁性膜，其具有分散在电介质矩阵中的铁磁细颗粒，并且不显示超顺磁性，并且还具有有限的矫顽力和铁磁膜。粒状磁性膜和铁磁性膜沿着基板的一个表面堆叠或排列，并构成铁磁性隧道结膜。在铁磁隧道结膜中，粒状磁膜用作屏障。在粒状磁性膜和铁磁膜中，通过外部磁场改变一个铁磁膜的自旋方向，显示出巨大的磁阻效应。这种磁性元件的特征在于，磁阻变化率大，饱和磁场小，元件的电阻可以控制在适当的值，其性能变化小，稳定。

7. 发明授权

US5700588A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5700588A
公开(公告)日：1997-12-23
申请号：US613170
申请日：1996-03-08
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
IPC分类号： G01R33/09 , H01L43/10 , G11B5/00
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译：磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。含有Fe，Co和Ni三种磁性元素的磁性层。任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。

8. 发明授权

US5578385A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5578385A
公开(公告)日：1996-11-26
申请号：US364524
申请日：1994-12-27
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
IPC分类号： G01R33/09 , H01L43/10 , G11B5/00
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译：磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。彼此相邻的两个磁性层，其间插入非磁性层之一，在基本不施加磁场的条件下进行反铁磁耦合。

9. 发明授权

US5523172A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5523172A
公开(公告)日：1996-06-04
申请号：US234863
申请日：1994-04-28
申请人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
发明人： Yoshiaki Saito , Shiho Okuno , Koichiro Inomata
IPC分类号： G01R33/09 , H01L43/10 , G11B5/00
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/10 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/12875 , Y10T428/12896 , Y10T428/1291
摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要翻译：磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。

10. 发明授权

US5500633A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5500633A
公开(公告)日：1996-03-19
申请号：US323809
申请日：1994-10-17
申请人： Yoshiaki Saito , Koichiro Inomata , Shiho Okuno , Yoshinori Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Shiho Okuno , Yoshinori Takahashi
IPC分类号： H01L43/10 , H01L43/00
CPC分类号： H01L43/10
摘要： A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.
摘要翻译：磁阻效应元件包括交替的磁性和非磁性层的多层堆叠，并且具有由介于相邻的堆叠的磁性和非磁性层之间的铁磁性元件和非铁磁性元件的混合物构成的混合层，以便表现出磁阻影响。多层堆叠包括至少两个磁性层，至少两个混合层和至少一个非磁性层。 2（X1 / Xn）/ n大于1.1，其中n是混合层的原子层数，X1是最靠近磁层的原子层的铁磁元素的原子浓度（％），Xn是最接近非磁性层的第n个原子层的铁磁性元素的原子浓度（％）。

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