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1. 发明授权

US06275041B1 Combustion state detecting apparatus for internal combustion engine 有权
标题翻译：内燃机燃烧状态检测装置
公开(公告)号：US06275041B1
公开(公告)日：2001-08-14
申请号：US09500477
申请日：2000-02-09
申请人： Koichi Okamura , Yasuyoshi Hatazawa , Shu Sasaki , Mitsuru Koiwa , Yutaka Ohashi , Hisanori Nobe
发明人： Koichi Okamura , Yasuyoshi Hatazawa , Shu Sasaki , Mitsuru Koiwa , Yutaka Ohashi , Hisanori Nobe
IPC分类号： F02B1700
CPC分类号： F02P17/12 , F02P2017/125
摘要： A combustion state detecting apparatus for an internal combustion engine is imparted with facility for determining discriminatively the causes for non-occurrence of combustion. The apparatus includes a spark plug (4) for generating a spark discharge upon application of a high voltage generated by an ignition coil (1) in response to an ignition signal (X1) to thereby fire an air-fuel mixture within a cylinder of the internal combustion engine, an ion current detecting means (6A) for detecting as ion current detection signals (X2a; X2) an ion current corresponding to an amount of ions produced within the cylinder immediately after combustion of the air-fuel mixture, a signal detecting means (7A; 7B; 9) for comparing the ion current detection signal (X2a) outputted from the ion current detecting means (6A) with a first reference voltage (Vth1) to thereby output a first decision signal (X3) while comparing the ion current detection signal (X2) with a second reference voltage (Vth2) to thereby output a second decision signal (X4) while invalidating output of the second decision signal (X4) during a predetermine time period from a time point at which the comparison of the ion current detection signal (X2) with the second reference voltage (Vth2) is started, and an estimating logic unit (9, 10; 112) for estimating a cause for nongeneration of a combustion signal on the basis of output statuses of the first decision signal (X3) and the second decision signal (X4).
摘要翻译：用于内燃机的燃烧状态检测装置被赋予用于确定不发生燃烧的原因的设备。该装置包括火花塞（4），用于在施加由点火线圈（1）响应于点火信号（X1）产生的高电压时产生火花放电，从而使位于所述火花塞内的气缸内的空气燃料混合物内燃机，用于检测作为离子电流检测信号（X2a; X2）的离子电流检测装置，其中所述离子电流对应于在所述空气 - 燃料混合物燃烧后立即产生的气缸内产生的离子的量，用于将从离子电流检测装置（6A）输出的离子电流检测信号（X2a）与第一参考电压（Vth1）进行比较的装置（7A; 7B; 9），从而输出第一判定信号（X3），同时比较离子具有第二参考电压（Vth2）的电流检测信号（X2），从而在从比较的时间点起的预定时间段期间使第二判定信号（X4）的输出无效的同时输出第二判定信号（X4）开始具有第二参考电压（Vth2）的离子电流检测信号（X2），估计逻辑单元（9,10; 112），用于基于第一判定信号（X3）和第二判定信号（X4）的输出状态来估计燃烧信号的非燃性原因。

2. 发明授权

US06336355B1 Combustion condition detecting apparatus for an internal combustion engine 有权
标题翻译：用于内燃机的燃烧条件检测装置
公开(公告)号：US06336355B1
公开(公告)日：2002-01-08
申请号：US09496277
申请日：2000-02-01
申请人： Shu Sasaki , Koichi Okamura , Yasuyoshi Hatazawa , Mitsuru Koiwa , Hisanori Nobe
发明人： Shu Sasaki , Koichi Okamura , Yasuyoshi Hatazawa , Mitsuru Koiwa , Hisanori Nobe
IPC分类号： G01M1500
CPC分类号： G01L23/225 , F02B77/08 , F02D35/021 , F02D41/009 , F02P17/12 , F02P2017/128 , G01L23/221
摘要： To provide a combustion condition detecting apparatus for an internal combustion engine, which may well detect the combustion conditions such as discrimination of a combustion cylinder and knock generating condition and may reduce a circuit scale therefor, there are provided an ignition coil 21 provided for each cylinder; an ignition plug 20 for discharging by the application of the ignition high tension voltage to ignite mixture within the cylinder; a bias circuit 1 provided for each cylinder for applying a bias voltage to the ignition plug 20; an ionic current detection circuit 2 provided for each cylinder for detecting as an ionic current detection signal an ionic current 6 generated in the cylinder that is immediately after the combustion of the mixture; a knock signal processing circuit 4 provided one for a combination of a plurality of cylinders that are every two or more cylinders in ignition order on the basis of a sum of the ionic current detection signals; and an ECU 5 for detecting the combustion condition of the ignition plug on the basis of the knock signal.
摘要翻译：为了提供一种用于内燃机的燃烧条件检测装置，其可以很好地检测诸如识别燃烧气缸和爆震发生状况的燃烧条件，并且可以减小其电路规模，设置有用于每个气缸的点火线圈21 ; 火花塞20，用于通过施加点火高压电压进行放电以点燃气缸内的混合物; 为每个气缸设置的偏置电路1，用于向火花塞20施加偏置电压; 为每个气缸设置的离子电流检测电路2，用于检测作为离子电流检测信号的离子电流6，其在混合物燃烧之后立即在汽缸中产生; 爆震信号处理电路4，其基于离子电流检测信号的总和，以点火顺序设置每个两个或更多个气缸的多个气缸的组合; 以及用于基于爆震信号检测火花塞的燃烧状态的ECU5。

3. 发明授权

US5728946A Karman vortex flow meter 失效
公开(公告)号：US5728946A
公开(公告)日：1998-03-17
申请号：US805053
申请日：1997-02-24
申请人： Shu Sasaki , Sakae Kiguchi , Toru Hashimoto , Shoji Hashimoto , Hiroshi Tanaka
发明人： Shu Sasaki , Sakae Kiguchi , Toru Hashimoto , Shoji Hashimoto , Hiroshi Tanaka
IPC分类号： G01F1/32
CPC分类号： G01F1/3272 , G01F1/3218
摘要： In a Karman vortex flow meter, a first space section is provided between a detection section and an inflow opening, and a second space section is provided between the detection section and an outflow opening. The first space and the second space have cross-sectional areas larger than a cross-sectional area of the detection passage. Accordingly, a disorder of a fluid coming in the inflow opening of the detection passage and pulsation components coming from the outflow opening are reduced by the first and second spaces.

4. 发明授权

US07718460B2 Solid state imaging apparatus 失效
标题翻译：固态成像装置
公开(公告)号：US07718460B2
公开(公告)日：2010-05-18
申请号：US12130057
申请日：2008-05-30
申请人： Shu Sasaki
发明人： Shu Sasaki
IPC分类号： H01L21/00
CPC分类号： H01L21/26513 , H01L27/14683
摘要： A method for manufacturing a solid state imaging device includes steps of forming a photodiode layer buried in a semiconductor substrate by ion injection and of forming a shielding layer buried in the photodiode layer by ion injection. At least in the ion injection process in the step of forming the shielding layer, an ion injection pause period is provided at least one time during whole ion injection step. According to the method, crystal defects are prevented from generating even if ion injection is performed with high energy, thereby suppressing dark current without complexity in manufacturing process.
摘要翻译：一种制造固态成像装置的方法包括以下步骤：通过离子注入形成掩埋在半导体衬底中的光电二极管层，并通过离子注入形成掩埋在光电二极管层中的屏蔽层。至少在形成屏蔽层的步骤中的离子注入工艺中，在整个离子注入步骤期间至少提供一次离子注入暂停时段。根据该方法，即使以高能量进行离子注入，也能够防止晶体缺陷的产生，从而在制造过程中不产生复杂性而抑制暗电流。

5. 发明授权

US07838344B2 Method for manufacturing a charge coupled device 失效
标题翻译：电荷耦合器件的制造方法
公开(公告)号：US07838344B2
公开(公告)日：2010-11-23
申请号：US12352799
申请日：2009-01-13
申请人： Hirokazu Sekine , Shu Sasaki
发明人： Hirokazu Sekine , Shu Sasaki
IPC分类号： H01L21/339
CPC分类号： H01L21/2652 , H01L29/76816 , H01L29/76875
摘要： A method for manufacturing a semiconductor device includes steps of forming an embedded channel 12 in a semiconductor substrate 11, forming a resist layer on the embedded channel 12 through an oxide film 14, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity region 13 having a concentration gradient by injecting ions into the embedded channel 12 through the resist mask, and arranging transfer electrodes 15 at prescribed positions on the first impurity region 13 through the oxide film 14 after removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底11中形成嵌入沟道12，通过氧化物膜14在嵌入沟道12上形成抗蚀剂层，使用其透光率变化的光栅掩模曝光抗蚀剂层显影电荷的转移方向，显影曝光的抗蚀剂层以形成具有梯度的抗蚀剂掩模，通过通过抗蚀剂掩模将离子注入到嵌入通道12中形成具有浓度梯度的第一杂质区域13，并将转移电极15设置在在除去抗蚀剂掩模之后通过氧化膜14在第一杂质区13上的规定位置，其中电位分布朝向电荷的传送方向变深。

6. 发明申请

US20080299696A1 SOLID STATE IMAGING APPARATUS 失效
标题翻译：固态成像装置
公开(公告)号：US20080299696A1
公开(公告)日：2008-12-04
申请号：US12130057
申请日：2008-05-30
申请人： Shu Sasaki
发明人： Shu Sasaki
IPC分类号： H01L21/265 , H01L31/0288
CPC分类号： H01L21/26513 , H01L27/14683
摘要： A method for manufacturing a solid state imaging device includes steps of forming a photodiode layer buried in a semiconductor substrate by ion injection and of forming a shielding layer buried in the photodiode layer by ion injection. At least in the ion injection process in the step of forming the shielding layer, an ion injection pause period is provided at least one time during whole ion injection step. According to the method, crystal defects are prevented from generating even if ion injection is performed with high energy, thereby suppressing dark current without complexity in manufacturing process.
摘要翻译：一种制造固态成像装置的方法包括以下步骤：通过离子注入形成掩埋在半导体衬底中的光电二极管层，并通过离子注入形成掩埋在光电二极管层中的屏蔽层。至少在形成屏蔽层的步骤中的离子注入工艺中，在整个离子注入步骤期间至少提供一次离子注入暂停时段。根据该方法，即使以高能量进行离子注入，也能够防止晶体缺陷的产生，从而在制造过程中不产生复杂性而抑制暗电流。

7. 发明授权

US08323860B2 Solid-state imaging device producing method and exposure mask 失效
标题翻译：固态成像装置的制造方法和曝光掩模
公开(公告)号：US08323860B2
公开(公告)日：2012-12-04
申请号：US12796065
申请日：2010-06-08
申请人： Shu Sasaki
发明人： Shu Sasaki
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/14806
摘要： A solid-state imaging device producing method includes the steps of: applying a resist material onto a substrate in which a channel region is formed; forming a resist layer by exposure and development of the resist material using a mask, the resist layer having an opening and a thin-film portion, the mask having a first region through which light is transmitted and a second region through which a smaller quantity of light than that the light transmitted through the first region is transmitted; subjecting the substrate to ion implantation using the resist layer as a mask to form an impurity region; etching the substrate using the resist layer as a mask after the ion implantation to form an alignment mark; and forming an electrode on the impurity region and part of the channel region using the alignment mark as a reference.
摘要翻译：一种固态成像器件的制造方法，其特征在于，包括以下步骤：在形成有沟道区域的衬底上涂敷抗蚀剂材料; 通过使用掩模曝光和显影抗蚀剂材料形成抗蚀剂层，所述抗蚀剂层具有开口和薄膜部分，所述掩模具有透射光的第一区域和第二区域，通过该第二区域，少量的比通过第一区域透射的光透过; 使用抗蚀剂层作为掩模对衬底进行离子注入以形成杂质区; 在离子注入之后使用抗蚀剂层作为掩模蚀刻基板以形成对准标记; 并使用对准标记作为基准，在杂质区域和沟道区域的一部分上形成电极。

8. 发明授权

US08530994B2 Method for producing solid state imaging device and solid-state imaging device 失效
标题翻译：固态成像装置和固态成像装置的制造方法
公开(公告)号：US08530994B2
公开(公告)日：2013-09-10
申请号：US13172037
申请日：2011-06-29
申请人： Shu Sasaki
发明人： Shu Sasaki
IPC分类号： H01L31/02
CPC分类号： H01L27/14685 , H01L27/14625 , H01L27/14636 , H01L27/14645
摘要： Certain embodiments provide a method for producing a solid-state imaging device including the steps of forming an interconnection layer, forming a passivation film, forming a resist layer, forming a plurality of protruding portions and an opening, and forming an electrode pad. In the step of forming the interconnection layer, the interconnection layer is formed on the surface of the semiconductor substrate having a photodiode. In the step of forming the resist layer, the resist layer is formed on the passivation film such that the resist layer has a plurality of first openings above the photodiode and has a second opening above the interconnection of the interconnection layer. In the step of forming the plurality of protruding portions and the opening, the plurality of protruding portions and the opening are formed by etching the passivation film via the resist layer.
摘要翻译：某些实施例提供了一种制造固态成像装置的方法，包括形成互连层，形成钝化膜，形成抗蚀剂层，形成多个突出部分和开口以及形成电极焊盘的步骤。在形成互连层的步骤中，在具有光电二极管的半导体衬底的表面上形成互连层。在形成抗蚀剂层的步骤中，抗蚀剂层形成在钝化膜上，使得抗蚀剂层在光电二极管上方具有多个第一开口，并且在互连层互连之上具有第二开口。在形成多个突出部分和开口的步骤中，通过经由抗蚀剂层蚀刻钝化膜形成多个突出部分和开口。

9. 发明申请

US20090181501A1 METHOD FOR MANUFACTURING A CHARGE COUPLED DEVICE 失效
标题翻译：制造充电耦合器件的方法
公开(公告)号：US20090181501A1
公开(公告)日：2009-07-16
申请号：US12352799
申请日：2009-01-13
申请人： Hirokazu Sekine , Shu Sasaki
发明人： Hirokazu Sekine , Shu Sasaki
IPC分类号： H01L21/77 , H01L21/266
CPC分类号： H01L21/2652 , H01L29/76816 , H01L29/76875
摘要： A method for manufacturing a semiconductor device includes steps of forming an embedded channel 12 in a semiconductor substrate 11, forming a resist layer on the embedded channel 12 through an oxide film 14, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity region 13 having a concentration gradient by injecting ions into the embedded channel 12 through the resist mask, and arranging transfer electrodes 15 at prescribed positions on the first impurity region 13 through the oxide film 14 after removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底11中形成嵌入沟道12，通过氧化物膜14在嵌入沟道12上形成抗蚀剂层，使用其透光率变化的光栅掩模曝光抗蚀剂层显影电荷的转移方向，显影曝光的抗蚀剂层以形成具有梯度的抗蚀剂掩模，通过通过抗蚀剂掩模将离子注入到嵌入通道12中形成具有浓度梯度的第一杂质区域13，并将转移电极15设置在在除去抗蚀剂掩模之后通过氧化膜14在第一杂质区13上的规定位置，其中电位分布朝向电荷的传送方向变深。

10. 发明授权

US5908991A Karman vortex flow meter 失效
标题翻译：卡曼涡流流量计
公开(公告)号：US5908991A
公开(公告)日：1999-06-01
申请号：US970392
申请日：1997-11-14
申请人： Shu Sasaki , Sakae Kiguchi , Toru Hashimoto , Shoji Hashimoto , Hiroshi Tanaka
发明人： Shu Sasaki , Sakae Kiguchi , Toru Hashimoto , Shoji Hashimoto , Hiroshi Tanaka
IPC分类号： G01F1/32
CPC分类号： G01F1/3272 , G01F1/3218
摘要： In a Karman vortex flow meter, a first space section is provided between a detection section and an inflow opening, and a second space section is provided between the detection section and an outflow opening. The first space and the second space have cross-sectional areas larger than a cross-sectional area of the detection passage. Accordingly, a disorder of a fluid coming in the inflow opening of the detection passage and pulsation components coming from the outflow opening are reduced by the first and second spaces.
摘要翻译：在卡曼涡流流量计中，在检测部和流入口之间设置有第一空间部，在检测部与流出口之间设置有第二空间部。第一空间和第二空间的横截面积大于检测通道的横截面面积。因此，通过第一空间和第二空间减少了来自检测通道的流入口的流体和来自流出口的脉动成分的紊乱。

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