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1. 发明授权

US08637163B2 Alloy with high glass forming ability and alloy-plated metal material using same 有权
标题翻译：具有高玻璃形成能力的合金和使用其的合金镀金属材料
公开(公告)号：US08637163B2
公开(公告)日：2014-01-28
申请号：US12309391
申请日：2007-07-19
申请人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
发明人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
IPC分类号： B32B15/00 , B32B15/18 , C22C18/00
CPC分类号： C23C30/00 , C22C1/002 , C22C18/00 , C22C21/06 , C22C21/12 , C22C45/00 , C22C45/001 , C22C45/005 , C22C45/08 , C23C2/04 , C23C2/06 , C23C2/12 , C23C4/123 , Y10T428/12493 , Y10T428/12799
摘要： An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.
摘要翻译：具有高玻璃形成能力的合金，其特征在于含有一组元素A，原子半径小于0.145nm，总数为20至85atm％的元素A，原子半径为0.145nm至小于0.17nm的元素B 总计为10〜79.7atm％，原子半径为0.17nm以上的元素C为0.3〜15atm％的组合; 当元素A，元素组B和元素C组中具有最大含量的元素分别被指定为“元素a”，“元素b”和“元素c”时，以元素A（例如Zn和/或Al）中的元素a的含量，元素B的元素B的含量（例如Mg）的含量与含量的比例元素C（例如Ca）中的元素c全部为70atm％以上; 并且通过在从元件a，元件b和元件c中选择的任何两个元件之间的液体形成焓是负的。

2. 发明申请

US20090246070A1 ALLOY WITH HIGH GLASS FORMING ABILITY AND ALLOY-PLATED METAL MATERIAL USING SAME 有权
标题翻译：合金与高玻璃形成能力和合金镀金属材料使用相同
公开(公告)号：US20090246070A1
公开(公告)日：2009-10-01
申请号：US12309391
申请日：2007-07-19
申请人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
发明人： Kohei Tokuda , Koichi Nose , Yuichi Sato , Makoto Nakazawa
IPC分类号： C22C23/02 , C22C18/00 , C22C21/06 , C22C23/04
CPC分类号： C23C30/00 , C22C1/002 , C22C18/00 , C22C21/06 , C22C21/12 , C22C45/00 , C22C45/001 , C22C45/005 , C22C45/08 , C23C2/04 , C23C2/06 , C23C2/12 , C23C4/123 , Y10T428/12493 , Y10T428/12799
摘要： An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.
摘要翻译：具有高玻璃形成能力的合金，其特征在于含有一组元素A，原子半径小于0.145nm，总数为20至85atm％的元素A，原子半径为0.145nm至小于0.17nm的元素B 总计为10〜79.7atm％，原子半径为0.17nm以上的元素C为0.3〜15atm％的组合; 当元素A，元素组B和元素C组中具有最大含量的元素分别被指定为“元素a”，“元素b”和“元素c”时，以元素A（例如Zn和/或Al）中的元素a的含量，元素B的元素B的含量（例如Mg）的含量与含量的比例元素C（例如Ca）中的元素c全部为70atm％以上; 并且通过在从元件a，元件b和元件c中选择的任何两个元件之间的液体形成焓是负的。

3. 发明授权

US08663818B2 High corrosion resistance hot dip galvanized steel material 有权
标题翻译：高耐腐蚀热浸镀锌钢材
公开(公告)号：US08663818B2
公开(公告)日：2014-03-04
申请号：US12224967
申请日：2007-03-14
申请人： Koichi Nose , Kohei Tokuda , Yuichi Sato , Makoto Nakazawa
发明人： Koichi Nose , Kohei Tokuda , Yuichi Sato , Makoto Nakazawa
IPC分类号： B32B15/00 , B32B15/01
CPC分类号： C23C2/06 , B32B15/013 , C22C18/00 , C22C18/04 , C22C21/06 , C22C21/08 , C22C23/02 , C22C23/04 , C22C30/06 , C22C45/00 , C22C45/005 , C23C2/28 , Y10T428/12757 , Y10T428/12771 , Y10T428/12792 , Y10T428/12799 , Y10T428/12951
摘要： The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si.
摘要翻译：本发明提供一种耐腐蚀性高的浸镀热镀锌钢材，其由Zn基热浸镀钢材组成，通过添加的元素实现镀层本身的较高的耐腐蚀性，并通过镀层牺牲铁金属的牺牲保护，或不含添加元素形成金属间化合物的劣化的可加工性，即耐腐蚀性高的镀锌钢材，其特征在于，含有Zn：35质量％以上，优选为40质量％以上的合金镀层，含有通过差示扫描量热法测定的热容量为1J / g以上的非平衡相。此外，以体积％计为5％以上，优选为50％以上是非晶相。合金层可以以质量％计含有Mg：1〜60％，Al：0.07〜59％，还可以含有选自Cr，Mn，Fe，Co，Ni和Cu中的一种或多种元素，总计0.1 〜10％，另外可以含有0.1〜10％的La，0.1〜10％的Ce，0.1〜10％的Ca，0.1〜10％的Sn，0.005〜2％的P，以及 0.02〜7％的Si。

4. 发明申请

US20090053555A1 High Corrosion Resistance Hot dip Galvanized Steel Material 有权
标题翻译：耐腐蚀性高浸镀锌钢材料
公开(公告)号：US20090053555A1
公开(公告)日：2009-02-26
申请号：US12224967
申请日：2007-03-14
申请人： Koichi Nose , Kohei Tokuda , Yuichi Sato , Makoto Nakazawa
发明人： Koichi Nose , Kohei Tokuda , Yuichi Sato , Makoto Nakazawa
IPC分类号： B32B15/20 , B32B15/01 , B32B15/18
CPC分类号： C23C2/06 , B32B15/013 , C22C18/00 , C22C18/04 , C22C21/06 , C22C21/08 , C22C23/02 , C22C23/04 , C22C30/06 , C22C45/00 , C22C45/005 , C23C2/28 , Y10T428/12757 , Y10T428/12771 , Y10T428/12792 , Y10T428/12799 , Y10T428/12951
摘要： The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si.
摘要翻译：本发明提供一种耐腐蚀性高的浸镀热镀锌钢材，其由Zn基热浸镀钢材组成，通过添加的元素实现镀层本身的较高的耐腐蚀性，并通过镀层牺牲铁金属的牺牲保护，或不含添加元素形成金属间化合物的劣化的可加工性，即耐腐蚀性高的镀锌钢材，其特征在于，含有Zn：35质量％以上，优选为40质量％以上的合金镀层，含有通过差示扫描量热法测定的热容量为1J / g以上的非平衡相。此外，以体积％计为5％以上，优选为50％以上是非晶相。合金层可以以质量％计含有Mg：1〜60％，Al：0.07〜59％，还可以含有选自Cr，Mn，Fe，Co，Ni和Cu中的一种或多种元素，总计0.1 〜10％，另外可以含有0.1〜10％的La，0.1〜10％的Ce，0.1〜10％的Ca，0.1〜10％的Sn，0.005〜2％的P，以及 0.02〜7％的Si。

5. 发明申请

US20220110934A1 PHARMACEUTICAL COMPOSITION 有权
公开(公告)号：US20220110934A1
公开(公告)日：2022-04-14
申请号：US17645509
申请日：2021-12-22
申请人： Takashi SATO , Takeshi Shimosato , Tatsuru Moritani , Tadahiko Morinaga , Yuichi Sato , Akihiro Kotsugai
发明人： Takashi SATO , Takeshi Shimosato , Tatsuru Moritani , Tadahiko Morinaga , Yuichi Sato , Akihiro Kotsugai
IPC分类号： A61K31/496 , A61K9/16
摘要： A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.

6. 发明授权

US08927982B2 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device 有权
标题翻译：氧化物半导体膜，半导体器件以及半导体器件的制造方法
公开(公告)号：US08927982B2
公开(公告)日：2015-01-06
申请号：US13415080
申请日：2012-03-08
申请人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/78618 , G02F1/136204 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L21/02565 , H01L21/0259 , H01L21/265 , H01L27/1052 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
摘要翻译：通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

7. 发明授权

US08859330B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08859330B2
公开(公告)日：2014-10-14
申请号：US13419468
申请日：2012-03-14
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
IPC分类号： H01L21/00 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L21/425 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.
摘要翻译：提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

8. 发明授权

US08716073B2 Method for processing oxide semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：氧化物半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08716073B2
公开(公告)日：2014-05-06
申请号：US13547451
申请日：2012-07-12
申请人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
发明人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L27/1225
摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.
摘要翻译：提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。提供可以高速执行的包括氧化物半导体膜的晶体管。提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。在氧化物半导体膜上形成具有还原性的膜。接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

9. 发明授权

US08418277B2 Flush toilet 有权
标题翻译：抽水马桶
公开(公告)号：US08418277B2
公开(公告)日：2013-04-16
申请号：US12438965
申请日：2007-08-29
申请人： Mayu Okubo , Yoshikazu Ushijima , Yuichi Sato , Yoshinobu Kato , Ryosuke Hayashi , Ayako Harada
发明人： Mayu Okubo , Yoshikazu Ushijima , Yuichi Sato , Yoshinobu Kato , Ryosuke Hayashi , Ayako Harada
IPC分类号： E03D11/00
CPC分类号： E03D5/01 , E03D5/10 , E03D2201/30
摘要： A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low. The flush toilet is flushed with pressurized flush water and has a flush toilet body having a bowl and a drain trap pipe path; a pressurizing pump for pressurizing flush water to be jetted out; a water storage tank for storing flush water to be pressurized; flush control means for causing rim water discharge to be performed for a predetermined rim water discharge time by water supply pressure of running water and also causing jet water discharge to be made to flush the bowl; flush water replenishing means for replenishing, after the bowl is flushed, flush water to the water storage tank from the running water to thereby return the amount of flush water stored in the water storage tank to a specified level; timing means for measuring a water replenishing time after the flush water replenishing is started until the amount of flush water stored in the water storage tank return to the specified level; and water discharge time regulation means for regulating the rim water discharge time based on the water replenishing time.
摘要翻译：一种冲水马桶，其中供应适量的水，并且可以安装在水压较低的区域。冲水马桶用加压冲洗水冲洗，并具有带有碗和排水管道通道的抽水马桶主体; 用于对冲洗水进行加压以加压的加压泵; 用于储存冲洗水以加压的储水箱; 冲洗控制装置，用于通过自来水的供水压力使预定的轮辋排水时间进行轮辋排水，并且还引起喷射水排出以冲洗碗; 冲洗水补充装置，在碗被冲洗后，从自来水冲洗水到储水箱，从而将存储在储水箱中的冲洗水量返回到指定水平; 定时装置，用于在开始冲洗水补充之后测量补水时间，直到储存在储水箱中的冲洗水量达到指定水平; 和排水时间调节装置，用于根据补水时间调节轮辋排水时间。

10. 发明申请

US20120228544A1 POSITIVE ELECTRODE MATERIAL FOR ELECTRICAL DEVICE, AND ELECTRICAL DEVICE PRODUCED USING SAME 有权
标题翻译：用于电气设备的正极电极材料和使用其制造的电气设备
公开(公告)号：US20120228544A1
公开(公告)日：2012-09-13
申请号：US13513051
申请日：2010-12-02
申请人： Atsushi Ito , Yasuhiko Ohsawa , Yuichi Sato
发明人： Atsushi Ito , Yasuhiko Ohsawa , Yuichi Sato
IPC分类号： H01M4/525
CPC分类号： H01M4/525 , H01M4/505
摘要： [Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency.[Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1−a)Li[NixCoyMn1-x-y]O2 (1) (wherein, 0
摘要翻译： [待解决的问题]提供一种具有高容量，提高初期充放电效率的电气装置用正极材料。解决问题的手段公开了由式（1）表示的电气装置用正极材料：aLi [Li1 / 3Mn2 / 3] O2。（1-a）Li [NixCoyMn1-xy] O2 （1）（其中0

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