专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5491348A Highly-oriented diamond film field-effect transistor 失效
标题翻译：高取向金刚石膜场效应晶体管
公开(公告)号：US5491348A
公开(公告)日：1996-02-13
申请号：US313986
申请日：1994-09-28
申请人： Hisasi Koyamao , Koichi Miyata , Kimitsugu Saito , David L. Dreifus , Brian R. Stoner
发明人： Hisasi Koyamao , Koichi Miyata , Kimitsugu Saito , David L. Dreifus , Brian R. Stoner
IPC分类号： H01L21/314 , H01L21/338 , H01L29/04 , H01L29/16 , H01L29/812
CPC分类号： H01L29/1602 , H01L29/045 , H01L29/812
摘要： A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.
摘要翻译：在第一半导体金刚石膜上形成源电极，在第二半导体金刚石膜上形成漏电极。在第一和第二半导体金刚石膜之间放置厚度在10埃至1毫米至10欧姆或更大的电阻之间的高度耐磨的金刚石薄膜。在耐高压金刚石膜上形成栅电极。因此，通过这些第一和第二半导体金刚石膜以及高度耐磨的金刚石膜形成沟道区。所述第一和第二半导体金刚石膜的全部或至少一部分和高度耐金刚石膜由高取向金刚石膜制成，金刚石的（100）或（111）晶面覆盖至少80％的膜表面，并且表示晶面取向的欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}满足| DELTAα| <10°，| DELTA beta | <10°，| DELTA gamma | <10°，同时在相邻的晶面之间。

2. 发明授权

US5371383A Highly oriented diamond film field-effect transistor 失效
标题翻译：高取向金刚石膜场效应晶体管
公开(公告)号：US5371383A
公开(公告)日：1994-12-06
申请号：US62052
申请日：1993-05-14
申请人： Koichi Miyata , Kimitsugu Saito , David L. Dreifus , Brian R. Stoner
发明人： Koichi Miyata , Kimitsugu Saito , David L. Dreifus , Brian R. Stoner
IPC分类号： C30B29/04 , H01L21/04 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312 , H01L29/04 , H01L29/12 , H01L31/036
CPC分类号： H01L29/1602 , H01L29/1079 , H01L29/66045 , H01L29/78 , Y10T428/30
摘要： A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..
摘要翻译：根据本发明的金刚石膜FET包括半导体金刚石层，栅极，源极和漏极，其中所述半导体金刚石层包括通过化学气相沉积生长的半导体高取向金刚石膜，并且至少80％的所述金刚石膜的表面积由（100）或（111）晶面构成，并且欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}代表两者的取向（100）或（111）晶面，同时满足相邻晶面之间的以下关系：| DELTA alpha |

3. 发明授权

US5493131A Diamond rectifying element 失效
标题翻译：钻石矫正元件
公开(公告)号：US5493131A
公开(公告)日：1996-02-20
申请号：US314548
申请日：1994-09-28
申请人： Koichi Miyata , Kimitsugu Saito , David L. Dreifus
发明人： Koichi Miyata , Kimitsugu Saito , David L. Dreifus
IPC分类号： H01L21/314 , H01L29/04 , H01L29/16 , H01L29/861
CPC分类号： H01L29/1602 , H01L29/045 , H01L29/861
摘要： The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least 80% of the surface area consists of (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent crystal planes. The diamond rectifying element thus constructed have an excellent electrical characteristics, and multiple of the elements can be produced on a large area at low cost. The diamond rectifying elements can be used for heat-resistant and high-power rectifying elements.
摘要翻译：整流元件由两个电极，未掺杂的金刚石膜和B掺杂的p型金刚石膜组成。金刚石膜由高度取向的金刚石膜形成，其中至少80％的表面积由（100）或（111）晶面组成，并且欧拉角的差异{DELTAα，DELTAβ，DELTAγ} 表示晶面取向的{α，β，γ}同时满足| DELTA alpha |

4. 发明授权

US5173761A Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer 失效
标题翻译：使用绝缘金刚石层的半导体多晶金刚石电子器件
公开(公告)号：US5173761A
公开(公告)日：1992-12-22
申请号：US646848
申请日：1991-01-28
申请人： David L. Dreifus , Kumar Das , Koichi Miyata , Koji Kobashi
发明人： David L. Dreifus , Kumar Das , Koichi Miyata , Koji Kobashi
IPC分类号： C23C14/06 , C30B29/04 , H01L21/04 , H01L21/205 , H01L21/265 , H01L29/16 , H01L29/78 , H01L29/80 , H01L29/861
CPC分类号： H01L29/1602 , H01L29/6603 , H01L29/66045 , Y10S257/921
摘要： A method and apparatus for contructing diamond semiconductor structures made of polycrystalline diamond thin films is disclosed. The use of a polycrystalline diamond deposition on a substrate material provides an advantage that any substrate material may be used and the ability to use polycrystalline diamond as a material is brought about through the use of an undoped diamond layer acting as an insulating layer which is formed on a boron-doped layer. Because of the structure, ion implantation can be employed to reduce the ohmic contact resistance. The ion implantation also provides that the entire structure can be made using a deep implant to form a channel layer which allows the insulating gate structure to be formed as an integral part of the device. The buried channel can be doped through the use of several implantation steps through the insulating undoped layer. As a result, the process and device is able to provide active polycrystallline diamond devices which have excellent resistance and reverse voltage characteristics while having an increased temperature capacity and increased range of operational environmental conditions when contrasted with the silicon technology. Furthermore with the disclosed process and devices, there is no requirement for a single crystal diamond substrate.
摘要翻译：公开了一种用于构造由多晶金刚石薄膜制成的金刚石半导体结构的方法和装置。在衬底材料上使用多晶金刚石沉积提供了可以使用任何衬底材料的优点，并且通过使用形成绝缘层的未掺杂的金刚石层来形成使用多晶金刚石作为材料的能力在硼掺杂层上。由于结构，可以使用离子注入来降低欧姆接触电阻。离子注入还提供了整个结构可以使用深度注入来形成沟道层，其允许绝缘栅极结构形成为器件的组成部分。可以通过使用几个注入步骤穿过绝缘未掺杂层来掺杂掩埋沟道。因此，与硅技术相比，该工艺和器件能够提供具有优异的电阻和反向电压特性的活性多晶金刚石器件，同时具有增加的温度容量和增加的操作环境条件的范围。此外，通过公开的方法和装置，不需要单晶金刚石基底。

5. 发明申请

US20100306580A1 Systems and Methods for Governing the Life Cycle of a Solid State Drive 有权
标题翻译：用于实施固态硬盘生命周期的系统和方法
公开(公告)号：US20100306580A1
公开(公告)日：2010-12-02
申请号：US12473437
申请日：2009-05-28
申请人： Brian D. McKean , David L. Dreifus , Robert W. Warren
发明人： Brian D. McKean , David L. Dreifus , Robert W. Warren
IPC分类号： G06F11/20 , G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1036 , G11C16/349 , G11C29/76
摘要： Various embodiments of the present invention provide systems and methods for data storage. As an example, storage devices are disclosed that include a plurality of memory blocks, an unreliable block identification circuit, and a partial failure indication circuit. Each of the plurality of memory blocks includes a plurality of memory cells that decrease in reliability over time as they are accessed. The unreliable block identification circuit is operable to determine that one or more of the plurality of memory blocks is unreliable, and the partial failure indication circuit is operable to disallow write access to the plurality of memory blocks upon determination that an insufficient number of the plurality of memory blocks remain reliable.
摘要翻译：本发明的各种实施例提供用于数据存储的系统和方法。作为示例，公开了包括多个存储块，不可靠块识别电路和部分故障指示电路的存储设备。多个存储块中的每一个包括多个存储单元，随着访问时存储单元的可靠性随着时间的推移而降低。所述不可靠块识别电路可操作以确定所述多个存储器块中的一个或多个不可靠，并且所述部分故障指示电路可操作以在确定所述多个存储块中的数量不足的情况下不允许对所述多个存储器块的写入访问内存块保持可靠。

6. 发明授权

US5506422A MOIS junction for use in a diamond electronic device 失效
标题翻译：用于钻石电子设备的MOIS接头
公开(公告)号：US5506422A
公开(公告)日：1996-04-09
申请号：US348485
申请日：1994-12-02
申请人： David L. Dreifus , Michelle L. Hartsell
发明人： David L. Dreifus , Michelle L. Hartsell
IPC分类号： C30B29/04 , H01L21/04 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1079 , H01L29/66045 , H01L29/78 , Y10T428/30
摘要： A junction suitable for incorporation in diamond electronic devices, such as field effect transistors, U-V photodetectors, capacitors, charge-coupled devices, etc., comprising a double layer structure deposited on the semiconducting diamond film of the electronic device, wherein the double layer structure consists of a layer of intrinsic diamond and a layer of a carrier blocking material. The carrier blocking materials is characterized by a band structure discontinuous with that of diamond resulting in the formation of a depletion layer at the interface. A contact is then formed on this double layer structure.
摘要翻译：包括沉积在电子器件的半导体金刚石膜上的双层结构的金刚石电子器件中诸如场效应晶体管，紫外光电检测器，电容器，电荷耦合器件等的接合点，其中双层结构由一层本征金刚石和一层载体阻挡材料组成。载体阻挡材料的特征在于与金刚石不同的带结构，其特征在于在界面处形成耗尽层。然后在该双层结构上形成接触。

7. 发明申请

US20100306577A1 Systems and Methods for Managing End of Life in a Solid State Drive 有权
标题翻译：用于管理固态硬盘中终止生命的系统和方法
公开(公告)号：US20100306577A1
公开(公告)日：2010-12-02
申请号：US12473454
申请日：2009-05-28
申请人： David L. Dreifus , Robert W. Warren , Brian McKean
发明人： David L. Dreifus , Robert W. Warren , Brian McKean
IPC分类号： G06F12/16 , G06F11/14 , G06F11/16 , G06F12/00 , G06F12/02
CPC分类号： G11C29/76 , G06F12/0246 , G06F2212/7208 , G11C16/349
摘要： Various embodiments of the present invention provide systems and methods for managing solid state drives. As an example, a storage system is described that include at least a first flash memory block and a second flash memory block, and a control circuit. The first flash memory block and the second flash memory block are addressable in the storage system. The control circuit is operable to identify the first flash memory block as partially failed, receive a write request directed to the first flash memory block; and direct the write request to the second flash memory block.
摘要翻译：本发明的各种实施例提供了用于管理固态驱动器的系统和方法。作为示例，描述了包括至少第一闪存块和第二闪存块以及控制电路的存储系统。第一个闪存块和第二个闪存块在存储系统中是可寻址的。控制电路可操作以将第一闪存块识别为部分故障，接收针对第一闪存块的写入请求; 并将写请求定向到第二闪存块。

8. 发明授权

US5652436A Smooth diamond based mesa structures 失效
标题翻译：平滑钻石的台面结构
公开(公告)号：US5652436A
公开(公告)日：1997-07-29
申请号：US514656
申请日：1995-08-14
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L31/0312
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译：基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

9. 发明授权

US5382808A Metal boride ohmic contact on diamond and method for making same 失效
标题翻译：金属硼化物欧姆接触金刚石及其制造方法
公开(公告)号：US5382808A
公开(公告)日：1995-01-17
申请号：US62350
申请日：1993-05-14
申请人： David L. Dreifus , Gary A. Ruggles
发明人： David L. Dreifus , Gary A. Ruggles
IPC分类号： H01L21/04 , H01L29/16 , H01L29/45 , H01L23/48
CPC分类号： H01L29/1602 , H01L21/043 , H01L29/45
摘要： An ohmic contact includes a metal boride layer on a semiconducting diamond layer. The metal boride preferably includes boron and a transition metal and, more preferably, a refractory metal. Heating of the metal boride layer and diamond during fabrication forms a highly boron-doped surface portion of the semiconductor diamond by boron diffusion. Alternately, the highly doped surface portion may be formed by selective ion implantation, annealing to form a graphitized surface portion, and removing the graphitized surface portion by etching to thereby expose the highly doped surface portion. The highly doped surface portion lowers the electrical resistivity of the contact. In addition, an interface region of a carbide may also be readily formed by heating. The carbide interface region enhances mechanical adhesion of the metal boride and also serves to lower the electrical resistance of the contact. The ohmic contact may be incorporated into many semiconductor devices including, for example, transistors, diodes, and other devices.
摘要翻译：欧姆接触包括半导体金刚石层上的金属硼化物层。金属硼化物优选包括硼和过渡金属，更优选地包括难熔金属。在制造过程中金属硼化物层和金刚石的加热通过硼扩散形成半导体金刚石的高硼掺杂表面部分。或者，可以通过选择性离子注入，退火以形成石墨化表面部分，并且通过蚀刻去除石墨化表面部分从而暴露高度掺杂的表面部分来形成高度掺杂的表面部分。高度掺杂的表面部分降低了触点的电阻率。此外，也可以通过加热容易地形成碳化物的界面区域。碳化物界面区域增强金属硼化物的机械粘附性，并且还用于降低接触的电阻。欧姆接触可以并入许多半导体器件，包括例如晶体管，二极管和其它器件。

10. 发明授权

US08745449B2 Systems and methods for managing end of life in a solid state drive 有权
标题翻译：用于管理固态驱动器中的生命终止的系统和方法
公开(公告)号：US08745449B2
公开(公告)日：2014-06-03
申请号：US13347827
申请日：2012-01-11
申请人： David L. Dreifus , Robert W. Warren , Brian McKean
发明人： David L. Dreifus , Robert W. Warren , Brian McKean
IPC分类号： G06F11/00
CPC分类号： G11C29/76 , G06F12/0246 , G06F2212/7208 , G11C16/349
摘要： Various embodiments of the present invention provide systems and methods for managing solid state drives. As an example, a storage system is described that include at least a first flash memory block and a second flash memory block, and a control circuit. The first flash memory block and the second flash memory block are addressable in the storage system. The control circuit is operable to identify the first flash memory block as partially failed, receive a write request directed to the first flash memory block; and direct the write request to the second flash memory block.
摘要翻译：本发明的各种实施例提供了用于管理固态驱动器的系统和方法。作为示例，描述了包括至少第一闪存块和第二闪存块以及控制电路的存储系统。第一个闪存块和第二个闪存块在存储系统中是可寻址的。控制电路可操作以将第一闪存块识别为部分故障，接收针对第一闪存块的写入请求; 并将写请求定向到第二闪存块。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式