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1. 发明申请

US20110238274A1 SHIFT CONTROL APPARATUS AND TRANSMISSION APPARATUS 有权
标题翻译：移动控制装置和传输装置
公开(公告)号：US20110238274A1
公开(公告)日：2011-09-29
申请号：US13039797
申请日：2011-03-03
申请人： Kohei TSUDA , Yoichi TAJIMA , Tomokazu ITO
发明人： Kohei TSUDA , Yoichi TAJIMA , Tomokazu ITO
IPC分类号： F16H59/00
CPC分类号： F16H61/08 , F16H61/061 , F16H61/686 , F16H2059/702
摘要： A shift control apparatus controlling a stepped transmission. The apparatus is configured with a gear ratio setting unit, and a shift speed change determining unit. A shift speed change predicting unit predicts in advance a change of shift speed by the shift speed change determining unit based on the set gear ratio, a rate of change in the set gear ratio, and an engagement preparation time which is a time needed for engagement preparation of the friction engagement element. A shift control unit controls a hydraulic actuator so that engagement preparation of a friction engagement element to be engaged is performed when a change of shift speed is predicted, and controls the hydraulic actuator so that a hydraulic pressure needed for engaging the friction engagement element is supplied to a hydraulic servo when a change of shift speed is determined by the shift speed change determining unit.
摘要翻译：控制有阶梯式变速器的变速控制装置。该装置配置有齿轮比设定单元和换档速度变更判定单元。换档速度变化预测单元基于所设定的齿轮比，设定的齿轮比的变化率和作为接合所需要的时间的接合准备时间，预先预测换档速度变化确定单元的换档速度的变化制备摩擦接合元件。变速控制单元控制液压致动器，使得当预测换档速度的变化时执行要接合的摩擦接合元件的接合准备，并且控制液压致动器以便提供用于接合摩擦接合元件所需的液压压力当由换档速度变化确定单元确定换档速度的变化时，到液压伺服机构。

2. 发明申请

US20120064237A1 FILM FORMING METHOD 有权
标题翻译：电影制作方法
公开(公告)号：US20120064237A1
公开(公告)日：2012-03-15
申请号：US13230975
申请日：2011-09-13
申请人： Yasutaka NITTA , Tomokazu ITO
发明人： Yasutaka NITTA , Tomokazu ITO
IPC分类号： B05D1/36
CPC分类号： C23C24/04 , B05B13/0442
摘要： There is disclosed a film forming method of spraying an aerosol jetted from a nozzle on a film formation object, while continuously changing a spraying position of the aerosol, to form a film which continuously covers an upper surface, an outer surface and a curved surface, which enables continuous formation of a high-quality film by a simple process. This film forming method includes a first film forming step of continuously spraying the aerosol on an upper surface W01 and a curved surface W03 connected to the upper surface W01, to continuously form a film which covers the upper surface W01 and a film which covers at least part of the curved surface W03; and a second film forming step of continuously forming a film which covers an outer surface W02 and a film which further covers the film formed on the curved surface W03 in the first film forming step.
摘要翻译：公开了一种在连续地改变喷雾位置的同时喷雾从喷嘴喷射到成膜物体上的气溶胶的成膜方法，形成连续地覆盖上表面，外表面和曲面的膜，这使得能够通过简单的工艺连续地形成高质量的膜。这种成膜方法包括：在上表面W01和连接到上表面W01的曲面W03上连续喷雾气溶胶的第一成膜步骤，以连续地形成覆盖上表面W01的膜和至少覆盖上膜部分曲面W03; 以及第二成膜步骤，连续地形成覆盖在第一成膜步骤中覆盖形成在曲面W03上的膜的外表面W02和膜的膜。

3. 发明申请

US20090284340A1 COMMON MODE FILTER 有权
标题翻译：共模滤波器
公开(公告)号：US20090284340A1
公开(公告)日：2009-11-19
申请号：US12463756
申请日：2009-05-11
申请人： Tomonaga NISHIKAWA , Tomokazu ITO , Takeshi OKUMURA , Makoto YOSHIDA , Hiroshi KAMIYAMA , Sho NAKAGOMI , Tatsuya KARAKAME
发明人： Tomonaga NISHIKAWA , Tomokazu ITO , Takeshi OKUMURA , Makoto YOSHIDA , Hiroshi KAMIYAMA , Sho NAKAGOMI , Tatsuya KARAKAME
IPC分类号： H01F5/00
CPC分类号： H01F17/0013 , H01F17/04 , H01F2017/0066 , H01F2017/0093 , H03H7/427 , H03H2001/0085
摘要： A common mode filter is provided as one in a three-layered structure with improved high-frequency characteristics. The common mode filter 1 has the three-layered structure including a first coil layer 14, a second coil layer 18, and a lead layer 16. A first planar coil 21 and a second planar coil 41 of a substantially circular spiral shape are formed in the first and second coil layers 14, 18, respectively. A first lead wire 31 and a second lead wire 32 formed in a lead layer 16 have a first straight portion 31c and a second straight portion 32c, respectively. The first straight portion 31c is located on a straight line L1 perpendicular to a plurality of first tangent lines to spirals 22, 42 at a plurality of respective intersection points with the spirals 22, 42. The second straight portion 32c is located on a straight line L2 perpendicular to a plurality of second tangent lines to the spirals 22, 42 at a plurality of respective intersection points with the spirals 22, 42.
摘要翻译：共模滤波器被提供为具有改进的高频特性的三层结构中的一种。共模滤波器1具有包括第一线圈层14，第二线圈层18和引线层16的三层结构。基本圆形螺旋形状的第一平面线圈21和第二平面线圈41形成在第一和第二线圈层14,18。形成在引线层16中的第一引线31和第二引线32分别具有第一直线部分31c和第二直线部分32c。第一直线部分31c位于与多个第一切线垂直的直线L1上，在与螺旋22,42的多个相交点处的螺线22和42处。第二直线部分32c位于直线 L2在与螺线22,42的多个相应交点处垂直于与螺线22,42的多条第二切线。

4. 发明申请

US20100182724A1 COMPOSITE ELECTRONIC DEVICE AND DIGITAL TRANSMISSION CIRCUIT USING THEREOF 有权
标题翻译：复合电子设备和数字传输电路
公开(公告)号：US20100182724A1
公开(公告)日：2010-07-22
申请号：US12692129
申请日：2010-01-22
申请人： Tomokazu ITO , Yasuhiro Hirobe , Atsushi Hitomi , Yuji Terada , Kensaku Asakura , Takeshi Urano
发明人： Tomokazu ITO , Yasuhiro Hirobe , Atsushi Hitomi , Yuji Terada , Kensaku Asakura , Takeshi Urano
IPC分类号： H02H9/04
CPC分类号： H03H7/0107 , H03H7/427 , H03H2001/0085
摘要： A composite electronic device includes first and second magnetic substrates, and a functional layer sandwiched between these magnetic substrates, and the functional layer is configured by a common-mode filter layer and a ESD protection element layer. An electrostatic capacitance of the ESD protection elements is equal to or lower than 0.35 pF. The common-mode filter layer includes a first spiral conductor formed on an insulation layer, and a second spiral conductor formed on an insulation layer. DC resistance of a common mode filter is equal to or higher than 0.5Ω and equal to or lower than 5Ω, and an electrostatic capacitance of the ESD protection elements is equal to or lower than 0.35 pF. A width W and a length L of the first and second spiral conductors satisfy a relational equation expressed by √(L/W)
摘要翻译：复合电子器件包括第一和第二磁性基板以及夹在这些磁性基板之间的功能层，功能层由共模滤波器层和ESD保护元件层构成。 ESD保护元件的静电电容等于或低于0.35pF。共模滤波器层包括形成在绝缘层上的第一螺旋导体和形成在绝缘层上的第二螺旋导体。共模滤波器的直流电阻等于或高于0.5＆OHgr; 并且等于或低于5＆OHgr;并且ESD保护元件的静电电容等于或低于0.35pF。第一和第二螺旋导体的宽度W和长度L满足由（L / W）<（7.6651-fc）/0.1385表示的关系式。

5. 发明申请

US20120133472A1 ELECTRONIC COMPONENT 有权
标题翻译：电子元件
公开(公告)号：US20120133472A1
公开(公告)日：2012-05-31
申请号：US13294627
申请日：2011-11-11
申请人： Tomonaga NISHIKAWA , Makoto YOSHIDA , Tomokazu ITO , Hiroshi KAMIYAMA , Takeshi OKUMURA , Tsuneo KUWAHARA
发明人： Tomonaga NISHIKAWA , Makoto YOSHIDA , Tomokazu ITO , Hiroshi KAMIYAMA , Takeshi OKUMURA , Tsuneo KUWAHARA
IPC分类号： H01F5/00
CPC分类号： H01F17/04 , H01F27/292 , H01F41/042
摘要： An electronic component is provided with a substrate, a thin-film element layer provided on the substrate, first and second bump electrodes, provided on a surface of the thin-film element layer, and an insulator layer provided between the first bump electrode and the second bump electrode. The thin-film element layer contains a first spiral conductor which is a plane coil pattern. The first bump electrode is connected to an internal peripheral end of the first spiral conductor. The second bump electrode is connected to an external peripheral end of the first spiral conductor. Both of the first and second bump electrodes, have a first exposure surface exposed to a principal surface of the insulator layer and a second exposure surface exposed to an end face of the insulator layer.
摘要翻译：电子部件设置有基板，设置在基板上的薄膜元件层，设置在薄膜元件层的表面上的第一和第二突起电极，以及设置在第一突起电极和第二突起电极之间的绝缘体层第二凸起电极。薄膜元件层包含作为平面线圈图案的第一螺旋导体。第一凸起电极连接到第一螺旋导体的内周端。第二凸起电极连接到第一螺旋导体的外周端。第一和第二凸起电极都具有暴露于绝缘体层的主表面的第一曝光表面和暴露于绝缘体层的端面的第二曝光表面。

6. 发明申请

US20090243121A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND LAYOUT METHOD FOR THE SAME 审中-公开
标题翻译：半导体集成电路及其布局方法
公开(公告)号：US20090243121A1
公开(公告)日：2009-10-01
申请号：US12416492
申请日：2009-04-01
申请人： Tomokazu ITO
发明人： Tomokazu ITO
IPC分类号： H01L23/48 , G06F17/50
CPC分类号： H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A semi conductor integrated circuit includes a first via-contact configured to connect a first interconnection pattern provided for a first interconnection layer and a second interconnection pattern provided for a second interconnection layer, and a second via-contact configured to connect a third interconnection pattern provided for the first interconnection layer and the second interconnection pattern. A redundant interconnection pattern is formed in the first interconnection layer and configured to connect the first interconnection pattern and the third interconnection pattern to overlap above the second interconnection pattern.
摘要翻译：半导体集成电路包括：第一通孔接点，其被配置为连接为第一互连层提供的第一互连图案和为第二互连层提供的第二互连图案;以及第二通孔接点，被配置为连接提供的第三互连图案用于第一互连层和第二互连图案。冗余互连图案形成在第一互连层中并且被配置为将第一互连图案和第三互连图案连接以重叠在第二互连图案之上。

7. 发明申请

US20090066462A1 COMMON MODE CHOKE COIL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：共用模式选择线圈及其制造方法
公开(公告)号：US20090066462A1
公开(公告)日：2009-03-12
申请号：US12196464
申请日：2008-08-22
申请人： Tomokazu ITO , Tomonaga NISHIKAWA
发明人： Tomokazu ITO , Tomonaga NISHIKAWA
IPC分类号： H01F5/00 , H01F7/06
CPC分类号： H01F17/0013 , H01F5/04 , H01F41/042 , H01F41/046 , H01F2017/0093 , Y10T29/4902
摘要： A common mode choke coil includes two extraction conductors formed on a resin insulating layer, and a concave portion is formed in the resin insulating layer in an area between a first portion covered with one of the extraction conductors and a second portion covered with the other extraction conductor. An upper resin insulating layer is embedded inside the concave portion. Accordingly, because the resin insulating layer is not flat in the portion where the extraction conductors are formed, a distance between the extraction conductors along the surface of the resin insulating layer increases. Therefore, a current path generated due to ion migration along the surface of the insulating layer is hardly formed, thereby enabling to obtain high withstand voltage, even if the distance between the extraction conductors is short.
摘要翻译：共模扼流线圈包括形成在树脂绝缘层上的两个引出导体，并且在树脂绝缘层之间的一个区域中形成凹部，该第一部分覆盖有一个引出导体，第二部分覆盖有另一个提取导体。上部树脂绝缘层嵌入凹部内。因此，由于树脂绝缘层在形成提取导体的部分中不是平坦的，所以提取导体之间距树脂绝缘层表面的距离增加。因此，由于沿着绝缘层的表面离子迁移而产生的电流路径几乎不形成，因此即使提取导体之间的距离短，也能获得高的耐受电压。

8. 发明申请

US20110007438A1 COMPOSITE ELECTRONIC DEVICE, MANUFACTURING METHOD THEREOF, AND CONNECTION STRUCTURE OF COMPOSITE ELECTRONIC DEVICE 有权
标题翻译：复合电子器件及其制造方法及复合电子器件的连接结构
公开(公告)号：US20110007438A1
公开(公告)日：2011-01-13
申请号：US12568911
申请日：2009-09-29
申请人： Tomokazu ITO , Yasuhiro Hirobe , Atsushi Hitomi , Yuji Terada , Kensaku Asakura , Takeshi Urano
发明人： Tomokazu ITO , Yasuhiro Hirobe , Atsushi Hitomi , Yuji Terada , Kensaku Asakura , Takeshi Urano
IPC分类号： H02H9/00 , H02H3/22 , H05K3/44
CPC分类号： H01T4/08 , H01F17/0006 , H01F19/00 , H03H7/0107 , H03H7/427 , H03H2001/0085 , H05K1/0254 , H05K1/165 , H05K3/4629 , Y10T29/49124
摘要： The present invention is provided with a composite electronic device comprising an inductor element and an ESD protection element formed between two magnetic substrates, wherein the inductor element includes insulation layers made of a resin, and conductor patterns formed on the insulation layers, the ESD protection element includes a base insulation layer, a pair of electrodes arranged via gap formed therebetween on the base insulation layer, and an ESD absorbing layer arranged at least between the electrodes, and the ESD absorbing layer includes a composite material having an insulation inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulation inorganic material.
摘要翻译：本发明提供一种复合电子器件，其包括形成在两个磁性基片之间的电感器元件和ESD保护元件，其中电感器元件包括由树脂制成的绝缘层，以及形成在绝缘层上的导体图案，ESD保护元件包括基底绝缘层，在基底绝缘层上形成在它们之间的间隙布置的一对电极和至少布置在电极之间的ESD吸收层，并且ESD吸收层包括具有绝缘无机材料和导电性的复合材料无机材料不连续地分散在绝缘无机材料的基体中。

9. 发明申请

US20110002075A1 COMPOSITE ELECTRONIC DEVICE 有权
标题翻译：复合电子设备
公开(公告)号：US20110002075A1
公开(公告)日：2011-01-06
申请号：US12829840
申请日：2010-07-02
申请人： Masao ASAKAWA , Tomokazu ITO , Sho NAKAGOMI , Atsushi HITOMI , Yasuhiro HIROBE , Kensaku ASAKURA
发明人： Masao ASAKAWA , Tomokazu ITO , Sho NAKAGOMI , Atsushi HITOMI , Yasuhiro HIROBE , Kensaku ASAKURA
IPC分类号： H02H3/22
CPC分类号： H03H7/0107 , H03H7/427 , H03H2001/0085
摘要： The present invention is provided with a composite electronic device comprising an inductor element and an ESD protection element formed between two magnetic substrates, wherein the inductor element includes insulation layers made of a resin, and spiral conductors formed on the insulation layers, the ESD protection element includes a base insulation layer, a pair of gap electrodes arranged via gap formed therebetween on the base insulation layer, and an ESD absorbing layer arranged at least between the gap electrodes, and the ESD absorbing layer includes a composite material having an insulation inorganic material and a conductive inorganic material discontinuously dispersed in a matrix of the insulation inorganic material. The gap of the ESD protection element is provided at exterior of the spiral conductor so as not to be overlapped with the spiral conductor in view of a laminating direction.
摘要翻译：本发明提供一种复合电子器件，其包括形成在两个磁性基片之间的电感器元件和ESD保护元件，其中电感器元件包括由树脂制成的绝缘层，以及形成在绝缘层上的螺旋导体，ESD保护元件包括基底绝缘层，在基底绝缘层上形成在其间形成的间隙的一对间隙电极，以及至少设置在间隙电极之间的ESD吸收层，并且所述ESD吸收层包括具有绝缘性无机材料的复合材料，导电无机材料不连续地分散在绝缘无机材料的基体中。考虑到层叠方向，ESD保护元件的间隙设置在螺旋导体的外部，以便不与螺旋导体重叠。

10. 发明申请

US20100216318A1 ROTATING CONNECTOR ATTACHMENT STRUCTURE 有权
标题翻译：旋转连接器附件结构
公开(公告)号：US20100216318A1
公开(公告)日：2010-08-26
申请号：US12709247
申请日：2010-02-19
申请人： Nagao KURODA , Tomokazu ITO
发明人： Nagao KURODA , Tomokazu ITO
IPC分类号： H01R39/00
CPC分类号： B60R16/027 , F16B5/0664
摘要： An attachment structure is provided for attaching a stator member of a rotating connector to a bracket fitted into a steering column while being positioned. The bracket is provided with engaging recess grooves having first and second reference surfaces each orthogonal to each other, which are arranged along the axial direction of a steering shaft, and the stator member is provided with engaging protrusions respectively inserted into the corresponding engaging recess grooves. An elastic tongue piece for elastically urging the engaging protrusions on the first reference surface is formed in the engaging recess groove. Elastic tongue pieces for elastically urging the engaging protrusions on the second reference surfaces are formed on the engaging protrusions.
摘要翻译：提供一种附接结构，用于将旋转连接器的定子构件连接到在定位时装配到转向柱中的支架。支架设置有接合凹槽，其具有沿着转向轴的轴向布置的彼此垂直的第一和第二参考表面，并且定子构件设置有分别插入到相应的接合凹槽中的接合突起。用于弹性地推动第一参考表面上的接合突起的弹性舌片形成在接合凹槽中。用于弹性地推动第二参考表面上的接合突起的弹性舌片形成在接合突起上。

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