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    • 1. 发明授权
    • Single stripe magnetoresistive (MR) head
    • 单条磁阻(MR)头
    • US06373667B1
    • 2002-04-16
    • US09637208
    • 2000-08-14
    • Cherng-Chyi HanMao-Min ChenCheng Tzong HorngPo-Kang WangChyu Jiuh TorngKochan JuYimin Guo
    • Cherng-Chyi HanMao-Min ChenCheng Tzong HorngPo-Kang WangChyu Jiuh TorngKochan JuYimin Guo
    • G11B5127
    • B82Y25/00G01R33/093G11B5/3903G11B5/3932Y10T29/49048
    • A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
    • 一种用于制造软相邻层(SAL)磁阻(MR)传感器元件和若干软相邻层(SAL)磁阻(MR))传感器元件的方法,其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层,其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻(MR)层。 还在衬底上形成软相邻层(SAL),其中软相邻层(SAL)具有软相邻层(SAL)的第一表面和软相邻层(SAL)的第二表面。 软相邻层(SAL)的第一表面接触电介质层的第二表面。 最后,还在衬底上形成横向磁偏置层,横向磁偏置层接触软相邻层(SAL)的第二表面,并且其中介电层,磁阻(MR)层中的至少一个 ,软相邻层(SAL)和横向磁偏置层是使用蚀刻掩模形成的图案层,其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层(SAL)之间的磁阻(MR)层形成的软相邻层(SAL)磁阻(MR)传感器元件。 类似地,本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层(SAL)磁阻(MR)传感器元件。
    • 2. 发明授权
    • Photoresist frame plated magnetic transducer pole layer employing high
magnetic permeability seed layer
    • 光电阻框架电磁换能器极层采用高磁导率种子层
    • US5843521A
    • 1998-12-01
    • US897796
    • 1997-07-21
    • Kochan JuMao-Min ChenYimin Guo
    • Kochan JuMao-Min ChenYimin Guo
    • G11B5/31G11B5/39B05D5/12
    • G11B5/3967G11B5/3103G11B5/3113G11B5/3146G11B5/3163Y10T428/1186Y10T428/265Y10T428/31678
    • A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.
    • 一种用于形成磁换能器的方法,以及通过该方法形成的磁换能器。 首先提供基板。 然后在衬底上形成第一磁极层。 然后在第一磁极层上形成间隙填充介电层。 然后在填充介电层的间隙上形成种子层。 然后在种子层上形成光致抗蚀剂框架,该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法,其中光致抗蚀剂框架的侧壁的基部具有锥形,其在 电镀第二磁极层的边缘与其种子层的界面处。 然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上,其中籽晶层由厚度形成,并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿 由于镀覆的第二磁极层内的凹口,在第一磁极层和镀覆的第二磁极层之间。 用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。
    • 10. 发明授权
    • GMR configuration with enhanced spin filtering
    • GMR配置与增强的自旋过滤
    • US06770382B1
    • 2004-08-03
    • US09443447
    • 1999-11-22
    • Jei-Wei ChangBernard DienyMao-Min ChenCheng HorngKochan JuSimon Liao
    • Jei-Wei ChangBernard DienyMao-Min ChenCheng HorngKochan JuSimon Liao
    • G11B5127
    • H01F10/30B82Y10/00B82Y25/00G01R33/093G11B5/3133G11B5/3903G11B5/3909H01F10/3272H01L43/08Y10T428/1121Y10T428/1129Y10T428/1157Y10T428/1171Y10T428/12944Y10T428/2495
    • A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.
    • 自旋阀GMR和自旋滤波器SVGMR配置,其中在第一实施例中,重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构 例如FCC,BCC等)。 金属氧化物缓冲层增强了镜面散射。 自旋阀巨磁阻(SVGMR)传感器包括:衬底上的种子层。 种子层上重要的金属氧化物缓冲层(缓冲层)。 金属氧化物层优选由NiO或α-Fe2O3组成。 在金属氧化物层上的自由铁磁层。 在自由铁磁层上的非磁性导体间隔层。 在非磁性导体间隔层上方的钉扎铁磁层(第二个FM被钉住)和钉扎铁磁层上的钉扎材料层。 在第二实施例中,在缓冲层上形成高电导率层(HCL)以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例是由下AP层,间隔层(例如Ru)和上AP层组成的三层结构的钉扎FM层。