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1. 发明授权

US4902486A Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom 失效
标题翻译：新型砷化镓前体和低温砷化镓的制备方法
公开(公告)号：US4902486A
公开(公告)日：1990-02-20
申请号：US307995
申请日：1989-02-09
申请人： Klaus H. Theopold , Erin K. Byrne
发明人： Klaus H. Theopold , Erin K. Byrne
IPC分类号： C07F9/70 , C22C1/00
CPC分类号： C07F9/703 , C22C1/007
摘要： A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and byproducts which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.
摘要翻译：一种新型的砷化镓前体具有式R2GaAs（SiR'）2，其中R选自烷基取代的脂环族基团和烷基取代的芳族基团，R'是烷基。优选地，R是五甲基环戊二烯基，R'是甲基。在无水条件下，将该前体与醇，优选乙醇或叔丁醇在-20至60℃，优选室温下反应，形成固体砷化镓和在反应下为液体的副产物条件。可以通过提供量的被认为与过量醇反应物反应以产生催化量的HCl，例如（CH 3）3 SiCl或[R（Cl）GaAs（SiR'3）]的物质来辅助形成砷化镓的反应）2] n其中R是五甲基环戊二烯基，R'是甲基，在苯n的溶液中是1和3。

2. 发明授权

US4879397A Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom 失效
标题翻译：新型砷化镓前体和低温砷化镓的制备方法
公开(公告)号：US4879397A
公开(公告)日：1989-11-07
申请号：US116212
申请日：1987-11-03
申请人： Klaus H. Theopold , Erin K. Byrne
发明人： Klaus H. Theopold , Erin K. Byrne
IPC分类号： C07F9/70 , C22C1/00
CPC分类号： C22C1/007 , C07F9/703
摘要： A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions.
摘要翻译：一种新型的砷化镓前体具有式R2GaAs（SiR'）2，其中R选自烷基取代的脂环族基团和烷基取代的芳族基团，R'是烷基。优选地，R是五甲基戊二烯基，R'是甲基。在无水条件下，将前体与醇，优选乙醇或叔丁醇在-20℃至60℃的温度下反应，优选在室温下反应，形成固体砷化镓和副产物，液体在反应条件下。

3. 发明授权

US4980490A [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n 失效
标题翻译： [R（Cl）GaAs（SiR'3）2] n
公开(公告)号：US4980490A
公开(公告)日：1990-12-25
申请号：US445035
申请日：1989-12-04
申请人： Klaus H. Theopold , Erin K. Byrne
发明人： Klaus H. Theopold , Erin K. Byrne
IPC分类号： C07F9/70 , C22C1/00
CPC分类号： C07F9/703 , C22C1/007
摘要： A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.
摘要翻译：一种新型的砷化镓前体具有式R2GaAs（SiR'）2，其中R选自烷基取代的脂环族基团和烷基取代的芳族基团，R'是烷基。优选地，R是五甲基环戊二烯基，R'是甲基。在无水条件下，将前体与醇，优选乙醇或叔丁醇在-20℃至60℃的温度下反应，优选在室温下反应，形成固体砷化镓和副产物，液体在反应条件下。可以通过提供量的被认为与过量醇反应物反应以产生催化量的HCl，例如（CH 3）3 SiCl或[R（Cl）GaAs（SiR'3）]的物质来辅助形成砷化镓的反应）2] n其中R是五甲基环戊二烯基，R'是甲基，在苯n的溶液中是1和3。

4. 发明授权

US5346855A Method of making an INP-based DFB laser 失效
标题翻译：制造基于INP的DFB激光器的方法
公开(公告)号：US5346855A
公开(公告)日：1994-09-13
申请号：US6352
申请日：1993-01-19
申请人： Erin K. Byrne , Utpal K. Chakrabarti , Todd R. Hayes
发明人： Erin K. Byrne , Utpal K. Chakrabarti , Todd R. Hayes
IPC分类号： H01L21/314 , H01S5/12 , H01S5/323 , H01L21/20
CPC分类号： H01L21/314 , H01S5/12 , H01S5/1231 , H01S5/32391 , Y10S148/072 , Y10S148/095
摘要： Disclosed is a method of making InP-based DFB lasers that can reliably mitigate or substantially prevent erosion of the grating during overgrowth. The method comprises contacting, prior to overgrowth, the grating with a sulfurcontaining aqueous medium, e.g., 80 parts by weight H.sub.2 O/20 parts by weight ammonium sulfide.
摘要翻译：公开了一种制造基于InP的DFB激光器的方法，其可以可靠地减轻或基本上防止在过度生长期间光栅的侵蚀。该方法包括在过度生长之前使光栅与含硫的水性介质接触，例如80重量份的H 2 O / 20重量份的硫化铵。

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