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1. 发明授权

US07288485B2 Device and method for anisotropic plasma etching of a substrate, particularly a silicon element 有权
标题翻译：衬底，特别是硅元件的各向异性等离子体蚀刻的装置和方法
公开(公告)号：US07288485B2
公开(公告)日：2007-10-30
申请号：US10691108
申请日：2003-10-22
申请人： Klaus Breitschwerdt , Bernd Kutsch , Franz Laermer
发明人： Klaus Breitschwerdt , Bernd Kutsch , Franz Laermer
IPC分类号： H01L21/302
CPC分类号： H01L21/67069
摘要： A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species inside the chamber, the reactive species being created by the action of the alternating field upon an etching gas, and a passivating gas that is especially simultaneously introduced but spatially separated from it. Furthermore, an arrangement is provided, by the use of which, in the reaction region, at least a first zone that has etching gas applied to it, and at least a second zone that has passivating gas applied to it, are defined. In addition to this, the device has a mixing region downstream from the reaction region, using which, reactive species generated from the etching gas in the first zone and reactive species generated from the passivating gas in the second zone are intermixed with each other before acting upon the substrate.
摘要翻译：提供适用于其执行的方法和装置用于衬底，特别是硅元件的各向异性等离子体蚀刻。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于在室内产生具有反应性物质的等离子体的反应区域，反应性物质是由蚀刻气体上的交变场的作用产生的，以及特别同时引入但与其空间分离的钝化气体。此外，通过使用在反应区域中使用至少具有施加到其上的蚀刻气体的第一区域和至少施加有钝化气体的第二区域来进行布置。除此之外，该装置具有从反应区域下游的混合区域，利用该混合区域，从第一区域中的蚀刻气体产生的活性物质和由第二区域中的钝化气体产生的活性物质在作用之前相互混合在基板上。

2. 发明授权

US07285228B2 Device and method for anisotropic plasma etching of a substrate, a silicon body in particular 有权
标题翻译：特别是用于各向异性等离子体蚀刻衬底，硅体的装置和方法
公开(公告)号：US07285228B2
公开(公告)日：2007-10-23
申请号：US10506457
申请日：2003-03-05
申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
发明人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
IPC分类号： C23F1/00
CPC分类号： H01L21/67069
摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
摘要翻译：一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生同时又与之空间分离。排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

3. 发明申请

US20050126710A1 Device and method for anisotropically plasma etching of a substrate, particularly a silicon body 有权
标题翻译：用于各向异性等离子体蚀刻衬底，特别是硅体的装置和方法
公开(公告)号：US20050126710A1
公开(公告)日：2005-06-16
申请号：US10506457
申请日：2003-03-05
申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
发明人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/67069
摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
摘要翻译：一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生同时又与之空间分离。排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

4. 发明授权

US07642545B2 Layer and system with a silicon layer and a passivation layer, method for production of a passivation layer on a silicon layer and use thereof 有权
标题翻译：具有硅层和钝化层的层和系统，在硅层上制造钝化层的方法及其用途
公开(公告)号：US07642545B2
公开(公告)日：2010-01-05
申请号：US10520886
申请日：2003-05-06
申请人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt
发明人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt
IPC分类号： H01L21/00
CPC分类号： B81C1/00571 , B81B2203/033 , B81C2201/016 , H01L21/0332
摘要： A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.
摘要翻译：提供了一种用于制造层系统的层系统和方法，所述层系统具有硅层，其上至少区域地表面钝化钝化层，所述钝化层具有第一至少大部分无机部分层和第二层，至少主要是聚合物部分层。该方法包括在硅层上制备第一无机部分层，并在该第一部分层上制备形成钝化层的第二聚合物部分层。中间层的制造以与第一部分层相邻的表面区域的中间层构成为第一部分层的方式发生，并且与其邻接的第二部分层的表面区域中的中间层构成为第二部分层部分层。中间层的组成可以从对应于第一部分层的组合物连续地或逐步地转变成对应于第二部分层的组合物。

5. 发明授权

US06974709B2 Method and device for providing a semiconductor etching end point and for detecting the end point 失效
标题翻译：用于提供半导体蚀刻终点并用于检测终点的方法和装置
公开(公告)号：US06974709B2
公开(公告)日：2005-12-13
申请号：US10407015
申请日：2003-04-03
申请人： Klaus Breitschwerdt , Franz Laermer
发明人： Klaus Breitschwerdt , Franz Laermer
IPC分类号： H01J37/32 , H01L21/00 , G01R31/26 , H01L21/66
CPC分类号： H01L21/67069 , H01J37/32935
摘要： A method is provided for detecting an end point, a material transition or a boundary surface during the etching of a semiconductor element, a zone of the semiconductor element having non-homogeneous load carrier density and/or non-homogeneous load carrier polarity, particularly a p-n junction, which has an electrical voltage applied to it during etching, and an electrical current induced by it in this zone is measured, and reaching of this zone during etching is determined from a change in the electrical current. This method is suitable for the detection of the etching end point in gas phase etching, in particular with the aid of the etching gases ClF3 and/or BrF3, or in the anisotropic plasma etching of silicon substrates. In addition, a method is provided for etching a semiconductor element using a gaseous etching medium, during which the speed of removal of the semiconductor element is set or changed via a setting of the polarity and/or the density of free load carriers in the semiconductor element. In addition, a device for etching a semiconductor element, which device is suitable for carrying out the two methods described above, is provided.
摘要翻译：提供一种用于在半导体元件的蚀刻期间检测端点，材料转变或边界表面的方法，具有非均匀负载载流子密度和/或非均匀负载载流子极性的半导体元件的区域，特别是 pn结，其在蚀刻期间具有施加到其上的电压，并且测量在该区域中由其感生的电流，并且根据电流的变化来确定蚀刻期间该区域的到达。该方法适用于在气相蚀刻中特别是借助于蚀刻气体ClF 3 3和/或BrF 3 3的蚀刻终点的检测，或者在硅衬底的各向异性等离子体蚀刻。此外，提供了一种使用气体蚀刻介质蚀刻半导体元件的方法，在该方法中，通过设置半导体中的自由载流子的极性和/或密度来设定或改变半导体元件的移除速度元件。此外，提供了一种用于蚀刻半导体元件的装置，该装置适合于执行上述两种方法。

6. 发明授权

US07149070B2 Holding device, in particular for fixing a semiconductor wafer in a plasma etching device, and method for supplying heat to or dissipating heat from a substrate 有权
标题翻译：保持装置，特别是用于将半导体晶片固定在等离子体蚀刻装置中，以及用于向基板供热或散热的方法
公开(公告)号：US07149070B2
公开(公告)日：2006-12-12
申请号：US10495648
申请日：2002-10-04
申请人： Klaus Breitschwerdt , Franz Laermer , Andrea Urban
发明人： Klaus Breitschwerdt , Franz Laermer , Andrea Urban
IPC分类号： H02H23/00
CPC分类号： H01L21/68785 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H01L21/6833
摘要： A holding device including a holding element, on which a substrate is electrostatically fixed, positioned on a substrate electrode. In one configuration, a load body on the substrate electrode presses the holding element onto it, and is connected via a clamping device, which presses the former onto the substrate electrode, with a base, which supports the substrate electrode, the load body and the base being electrically insulated from the substrate electrode. In another configuration, the side of the holding element faces the substrate as an electrically insulating ferroelectric or piezoelectric material. Another configuration includes a device via which a liquid convection medium is feedable into a space formed by the holding element and substrate or is removable from there again. A method for supplying heat or dissipating heat from the back of a substrate to which heat is applied from the front, and which is held by the holding device.
摘要翻译：一种保持装置，其包括保持元件，基板静电固定在该保持元件上，位于基板电极上。在一种构造中，基板电极上的负载体将保持元件按压在其上，并且通过将基板压在基板电极上的夹持装置连接，基座支撑基板电极，负载体和基底与基底电极电绝缘。在另一构造中，保持元件的侧面作为电绝缘铁电体或压电材料的基板。另一种配置包括一种装置，通过该装置，液体对流介质可以被供给到由保持元件和基底形成的空间中，或者可以再次从该装置移除。一种用于从基板背面向供热或散热的方法，该基板从前部施加热量，并由保持装置保持。

7. 发明申请

US20060068510A1 Layer system with a silicon layer and a passivation layer, method for production of a passivation layer on a silicon layer and use thereof 有权
标题翻译：具有硅层和钝化层的层系统，在硅层上制造钝化层的方法及其用途
公开(公告)号：US20060068510A1
公开(公告)日：2006-03-30
申请号：US10520886
申请日：2003-05-06
申请人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt
发明人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt
IPC分类号： H01L21/00
CPC分类号： B81C1/00571 , B81B2203/033 , B81C2201/016 , H01L21/0332
摘要： A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.
摘要翻译：提供了一种用于制造层系统的层系统和方法，所述层系统具有硅层，其上至少区域地表面钝化钝化层，所述钝化层具有第一至少大部分无机部分层和第二层，至少主要是聚合物部分层。该方法包括在硅层上制备第一无机部分层，并在该第一部分层上制备形成钝化层的第二聚合物部分层。中间层的制造以与第一部分层相邻的表面区域的中间层构成为第一部分层的方式发生，并且与其邻接的第二部分层的表面区域中的中间层构成为第二部分层部分层。中间层的组成可以从对应于第一部分层的组合物连续地或逐步地转变成对应于第二部分层的组合物。

8. 发明授权

US07785486B2 Method of etching structures into an etching body using a plasma 有权
标题翻译：使用等离子体将结构刻蚀成蚀刻体的方法
公开(公告)号：US07785486B2
公开(公告)日：2010-08-31
申请号：US10676295
申请日：2003-09-30
申请人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt , Volker Becker
发明人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt , Volker Becker
IPC分类号： G01L21/30 , B44C1/22 , C23F1/00
CPC分类号： B81C1/00579 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/3065
摘要： Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.
摘要翻译：描述了使用等离子体将结构蚀刻到蚀刻体中，特别是通过蚀刻掩模以精确方式侧向限定的硅体中的凹陷的方法的附加变型。另外，描述了将介电层或电介质基体和硅层中的结构（特别是具有高纵横比的沟槽）引入到这种方法中，各向同性的不均匀和/或各向同性，在由硅制成的层的情况下在至少一些区域中制造结构之后进行层蚀刻，特别是使用氟基或高度氧化性的氟化合物如ClF 3。

9. 发明授权

US07094706B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
公开(公告)号：US07094706B2
公开(公告)日：2006-08-22
申请号：US10763010
申请日：2004-01-21
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

10. 发明授权

US06709546B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
标题翻译：通过使用电感耦合等离子体蚀刻衬底的装置和方法
公开(公告)号：US06709546B2
公开(公告)日：2004-03-23
申请号：US09871224
申请日：2001-05-31
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21306
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.
摘要翻译：通过使用电感耦合等离子体来蚀刻衬底，特别是硅体的器件和方法。使用ICP源产生高频电磁交变场，通过反应气体中的高频电磁交变场的作用产生由反应性粒子构成的感应耦合等离子体。此外，在基板和ICP源之间产生静态或时间可变的磁场，为此目的提供了一个彼此排列的至少两个磁场线圈。所得磁场的方向也大致平行于连接衬底和电感耦合等离子体的连接线限定的方向。最后，利用第一磁场线圈产生第一分量磁场，并且利用第二磁场线圈产生同等强度的第二分量磁场，所述双分量磁场取向为相反方向。

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