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1. 发明授权

US5365537A Method of producing a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5365537A
公开(公告)日：1994-11-15
申请号：US1462
申请日：1993-01-07
申请人： Kiyotaka Sato , Kenji Togura
发明人： Kiyotaka Sato , Kenji Togura
IPC分类号： H01S5/02 , H01S5/022 , H01S5/028 , H01S5/18 , H01S5/20 , H01S5/227 , H01S3/19
CPC分类号： H01S5/18 , H01S5/028 , H01S5/0202 , H01S5/2059 , H01S5/2272
摘要： A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45.degree. mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.
摘要翻译：半导体衬底被涂覆有绝缘掩模。使用光刻在掩模中切割窗口，在限定激光腔的长度的位置处留下应力梯度。在暴露的衬底上选择性地生长多个半导体膜层，以形成pin二极管并注入必要的杂质。膜的本征层形成激光激发层并且响应于激发发射激光束。经热处理后，器件迅速冷却，使来自面罩的应力梯度的区域中的应力接合半导体膜。当器件达到室温时，半导体膜被裂解面分离并分离。半导体激光器件输出光束的对准通过各向异性蚀刻裂解面而形成45°镜面。传统的光刻技术允许以亚微米级的精度形成激光谐振器。

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