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    • 1. 发明授权
    • Method of controlling diaphragm driving in electronic still camera and
device therefor
    • 电子静态照相机中的光圈驱动控制方法及其装置
    • US4806964A
    • 1989-02-21
    • US134115
    • 1987-12-17
    • Kazukiyo TamadaMotohiko HorioKiyotaka Sato
    • Kazukiyo TamadaMotohiko HorioKiyotaka Sato
    • G03B7/095G03B9/02G03B19/00H04N5/235H04N5/238
    • H04N5/238H04N5/2351
    • A method of controlling diaphragm driving in an electronic still camera, wherein a diaphragm is controlled such that an exposure value of a subject on an image forming screen can become a proper exposure value, and a device therefore. In this control of diaphragm driving, the photometric values obtained from every times of photometry are determined to be higher or lower than the proper exposure value. When the photometric values are determined to be higher than the proper exposure value continuously given times, the diaphragm is closed until the photometric values are determined to be lower than the proper exposure value. When the photometric values are determined to be lower than the proper exposure value continuously the given times, the diaphragm is opened until the photometric values are determined to be higher than the proper exposure value.
    • 一种控制电子静态照相机中的光圈驱动的方法,其中控制光阑使得成像屏幕上的被摄体的曝光值能够变成适当的曝光值,因此可以实现该装置。 在光圈驱动的这种控制中,将从每次光度测定得到的光度值确定为高于或低于正确的曝光值。 当光度值被确定为高于连续给定次数的适当曝光值时,隔膜被关闭,直到测光值被确定为低于适当的曝光值。 当将测光值连续确定为低于适当的曝光值时,打开光阑,直到测光值确定为高于适当的曝光值。
    • 6. 发明授权
    • Method of producing a semiconductor laser
    • 半导体激光器的制造方法
    • US5365537A
    • 1994-11-15
    • US1462
    • 1993-01-07
    • Kiyotaka SatoKenji Togura
    • Kiyotaka SatoKenji Togura
    • H01S5/02H01S5/022H01S5/028H01S5/18H01S5/20H01S5/227H01S3/19
    • H01S5/18H01S5/028H01S5/0202H01S5/2059H01S5/2272
    • A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45.degree. mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.
    • 半导体衬底被涂覆有绝缘掩模。 使用光刻在掩模中切割窗口,在限定激光腔的长度的位置处留下应力梯度。 在暴露的衬底上选择性地生长多个半导体膜层,以形成pin二极管并注入必要的杂质。 膜的本征层形成激光激发层并且响应于激发发射激光束。 经热处理后,器件迅速冷却,使来自面罩的应力梯度的区域中的应力接合半导体膜。 当器件达到室温时,半导​​体膜被裂解面分离并分离。 半导体激光器件输出光束的对准通过各向异性蚀刻裂解面而形成45°镜面。 传统的光刻技术允许以亚微米级的精度形成激光谐振器。