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    • 1. 发明授权
    • Successively biaxial-oriented porous polypropylene film and process for production thereof
    • 接着是双轴取向多孔聚丙烯薄膜及其生产方法
    • US07682689B2
    • 2010-03-23
    • US11802122
    • 2007-05-21
    • Kiyoshi SadamitsuNaoki IkedaManabu HokiKenichiro NagataKoichi Ogino
    • Kiyoshi SadamitsuNaoki IkedaManabu HokiKenichiro NagataKoichi Ogino
    • B32B3/26
    • C08J5/18B29C55/005B29C55/143B29K2023/12B29K2105/0005C08J2323/10H01M2/1653Y10T428/249978Y10T428/249979Y10T428/249986Y10T428/31909
    • Disclosed is a successively biaxially stretched film obtained by successive biaxial stretching method comprising extruding a melt of a β-crystal nucleating agent-containing polypropylene-based resin composition from a T-die, cooling the extruded resin on a chill roll, and stretching the resulting web sheet longitudinally and then transversely, wherein the longitudinally stretched sheet is made to have a degree of β-crystal orientation of less than 0.3 by the following method (I) and/or (II), optionally subjected to annealing treatment, and transversely stretched: method (I): melting the polypropylene-based resin composition containing needle crystals of a specific β-crystal nucleating agent at a temperature not lower than m.p. of the polypropylene-based resin and lower than dissolution temperature of the β-crystal nucleating agent in the polypropylene-based resin melt, and extruding the melt from the T-die at the same temperature, method (II): adjusting neck-in ratio during longitudinal stretching to 25 to 55%. The porous polypropylene film has good breakage resistance during manufacture, excellent thickness uniformity, high porosity and air-permeability, and is useful for battery separators.
    • 公开了通过连续双轴拉伸法获得的连续双轴拉伸膜,包括从T模挤出含有结晶成核剂的聚丙烯基树脂组合物的熔体,将冷却挤出的树脂冷却在冷却辊上, 所得到的纤维网片纵向和横向,其中通过以下方法(I)和/或(II)使纵向拉伸的片材具有小于0.3的程度,任选进行退火处理,以及 横向拉伸:方法(I):在不低于mp的温度下熔化含有特定的结晶成核剂的针状结晶的聚丙烯类树脂组合物 的聚丙烯类树脂,并且比聚丙烯类树脂熔体中的结晶成核剂的溶解温度低,并且在相同温度下从T模挤出熔体,方法(II):调节颈缩 纵向拉伸比为25〜55%。 多孔聚丙烯膜在制造时具有良好的抗破坏性,优异的厚度均匀性,高孔隙率和透气性,并且可用于电池隔板。
    • 2. 发明授权
    • Successively biaxial-oriented porous polypropylene film and process for production thereof
    • 接着是双轴取向多孔聚丙烯薄膜及其生产方法
    • US07235203B2
    • 2007-06-26
    • US10468005
    • 2002-02-15
    • Kiyoshi SadamitsuNaoki IkedaManabu HokiKenichiro NagataKoichi Ogino
    • Kiyoshi SadamitsuNaoki IkedaManabu HokiKenichiro NagataKoichi Ogino
    • B29C55/14
    • C08J5/18B29C55/005B29C55/143B29K2023/12B29K2105/0005C08J2323/10H01M2/1653Y10T428/249978Y10T428/249979Y10T428/249986Y10T428/31909
    • Disclosed is a successively biaxially stretched film obtained by successive biaxial stretching method comprising extruding a melt of a β-crystal nucleating agent-containing polypropylene-based resin composition from a T-die, cooling the extruded resin on a chill roll, and stretching the resulting web sheet longitudinally and then transversely, wherein the longitudinally stretched sheet is made to have a degree of β-crystal orientation of less than 0.3 by the following method (I) and/or (II), optionally subjected to annealing treatment, and transversely stretched: method (I): melting the polypropylene-based resin composition containing needle crystals of a specific β-crystal nucleating agent at a temperature not lower than m.p. of the polypropylene-based resin and lower than dissolution temperature of the β-crystal nucleating agent in the polypropylene-based resin melt, and extruding the melt from the T-die at the same temperature, method (II): adjusting neck-in ratio during longitudinal stretching to 25 to 55%. The porous polypropylene film has good breakage resistance during manufacture, excellent thickness uniformity, high porosity and air-permeability, and is useful for battery separators.
    • 公开了通过连续双轴拉伸法获得的连续双轴拉伸膜,包括从T模挤出含β-结晶成核剂的聚丙烯基树脂组合物的熔体,将挤出的树脂冷却在冷却辊上,并拉伸所得的 网片纵向和横向,其中通过以下方法(I)和/或(II)使纵向拉伸的片材具有小于0.3的β晶取向度,任选进行退火处理,横向拉伸 :方法(I):在不低于mp的温度下熔化含有特定β-晶体成核剂的针状结晶的聚丙烯类树脂组合物 的聚丙烯类树脂,低于聚丙烯类树脂熔融体中的β晶形成核剂的溶解温度,在相同温度下从T模挤出熔融物,方法(II):调节镦粗比 在纵向拉伸至25至55%。 多孔聚丙烯膜在制造时具有良好的抗破坏性,优异的厚度均匀性,高孔隙率和透气性,并且可用于电池隔板。
    • 5. 发明申请
    • Polypropylene-based resin molded article and process for producing the same
    • 聚丙烯系树脂成形体及其制造方法
    • US20060091581A1
    • 2006-05-04
    • US11302329
    • 2005-12-14
    • Kiyoshi SadamitsuManabu HokiNaoki IkedaKoichi Ogino
    • Kiyoshi SadamitsuManabu HokiNaoki IkedaKoichi Ogino
    • D01F1/02
    • C08J5/00C08J2323/12C08K5/20C08L23/10
    • The present invention provides a crystalline polypropylene-based resin molded article having an excellent impact resistance, in particular a remarkably high Izod impact strength, and a process for producing the molded article. A polypropylene-based resin molded article with an excellent impact resistance in which the β crystals of the polypropylene-based resin are unoriented can be produced by a process comprising the steps of: adding 0.01 to 0.1 parts by weight of at least one amide compound to 100 parts by weight of a polypropylene-based resin; kneading the resulting mixture at a temperature not lower than the dissolution temperature of the amide compound in the molten polypropylene-based resin until the compound dissolves in the molten polypropylene-based resin; and injecting and/or extruding the resulting melt in such a state that the amide compound has dissolved in the molten polypropylene-based resin.
    • 本发明提供具有优异的耐冲击性,特别是高度悬臂梁式冲击强度的结晶性聚丙烯系树脂成形体及其制造方法。 聚丙烯类树脂的β晶体为非取向性的耐冲击性优异的聚丙烯系树脂成形体可以通过以下工序来制备,该方法包括:将0.01〜0.1重量份的至少一种酰胺化合物加入到 100重量份的聚丙烯类树脂; 在不低于熔融聚丙烯类树脂中的酰胺化合物的溶解温度的温度下捏合所得混合物,直到化合物溶解在熔融的聚丙烯类树脂中; 并且以使得酰胺化合物溶解在熔融的聚丙烯类树脂中的状态注入和/或挤出所得到的熔体。
    • 7. 发明授权
    • Method for manufacturing epitaxial wafer
    • 外延晶片制造方法
    • US08920560B2
    • 2014-12-30
    • US11934461
    • 2007-11-02
    • Yasuo KoikeToshiaki OnoNaoki IkedaTomokazu Katano
    • Yasuo KoikeToshiaki OnoNaoki IkedaTomokazu Katano
    • C30B15/14C30B15/20C30B25/20C30B29/06C30B33/02H01L21/322
    • C30B15/206C30B25/20C30B29/06C30B33/02H01L21/3225Y10T428/26
    • A method for manufacturing an epitaxial wafer includes: a step of pulling a single crystal from a boron-doped silicon melt in a chamber based on a Czochralski process; and a step of forming an epitaxial layer on a surface of a silicon wafer sliced from the single crystal. The single crystal is allowed to grow while passed through a temperature region of 800 to 600° C. in the chamber in 250 to 180 minutes during the pulling step. The grown single crystal has an oxygen concentration of 10×1017 to 12×1017 atoms/cm3 and a resistivity of 0.03 to 0.01 Ωcm. The silicon wafer is subjected to pre-annealing prior to the step of forming the epitaxial layer on the surface of the silicon wafer, for 10 minutes to 4 hours at a predetermined temperature within a temperature region of 650 to 900° C. in an inert gas atmosphere. The method is to fabricate an epitaxial wafer that has a diameter of 300 mm or more, and that attains a high IG effect, and involves few epitaxial defects.
    • 一种用于制造外延晶片的方法包括:基于切克劳斯(Czochralski)工艺在腔室中从硼掺杂的硅熔体中拉出单晶的步骤; 以及在从单晶切片的硅晶片的表面上形成外延层的步骤。 在拉伸步骤期间,250至180分钟内,使单晶经过室内800〜600℃的温度区域生长。 生长的单晶的氧浓度为10×1017〜12×1017原子/ cm3,电阻率为0.03〜0.01&OHgr; cm。 在硅晶片的表面上形成外延层的步骤之前,在650-900℃的温度范围内,在惰性的温度范围内,将硅晶片进行预退火10分钟至4小时 气体气氛。 该方法是制造直径为300mm以上的外延晶片,其具有高的IG效应,并且涉及很少的外延缺陷。