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1. 发明授权

US4875284A Process for producing a package for packing semiconductor devices 失效
标题翻译：用于制造用于包装半导体器件的封装的方法
公开(公告)号：US4875284A
公开(公告)日：1989-10-24
申请号：US168056
申请日：1988-03-14
申请人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo , Noriaki Matsumura
发明人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo , Noriaki Matsumura
IPC分类号： H01L21/48 , H01L23/057 , H01L23/14
CPC分类号： H01L21/481 , H01L23/057 , H01L23/142 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/16195 , Y10T29/49126 , Y10T29/49155
摘要： In a package comprising a chip mounting base and a cap to be fitted on the base, the base comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a patterned metal layer formed on the ceramic layer in a selected area thereof, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, and the cap comprises a metal substrate, an electrically insulating ceramic layer formed in at least the marginal portion of the side of the metal substrate which faces the base, and a mixed layer that is formed in an area near the interface between the metal substrate and the ceramic layer.
摘要翻译：在包括芯片安装基座和安装在基座上的盖子的封装中，基座包括金属基板，形成在金属基板上的电绝缘陶瓷层，在其选定区域中形成在陶瓷层上的图案化金属层形成在金属基板和陶瓷层之间的界面附近的区域中的第一混合层，以及形成在陶瓷层和金属层之间的界面附近的区域的第二混合层，并且该盖包括金属基板，至少形成在金属基板的与基板相对的一侧的边缘部分中的电绝缘陶瓷层，以及形成在金属基板和陶瓷层之间的界面附近的区域中的混合层。

2. 发明授权

US4831212A Package for packing semiconductor devices and process for producing the same 失效
标题翻译：用于包装半导体器件的封装及其制造方法
公开(公告)号：US4831212A
公开(公告)日：1989-05-16
申请号：US48357
申请日：1987-05-11
申请人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo , Noriaki Matsumura
发明人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo , Noriaki Matsumura
IPC分类号： H01L21/48 , H01L23/057 , H01L23/14
CPC分类号： H01L21/481 , H01L23/057 , H01L23/142 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/16195 , Y10T29/49126 , Y10T29/49155
摘要： In a package comprising a chip mounting base and a cap to be fitted on the base, the base comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a patterned metal layer formed on the ceramic layer in a selected area thereof, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, and the cap comprises a metal substrate, an electrically insulating ceramic layer formed in at least the marginal portion of the side of the metal substrate which faces the base, and a mixed layer that is formed in an area near the interface between the metal substrate and the cermaic layer.
摘要翻译：在包括芯片安装基座和安装在基座上的盖子的封装中，基座包括金属基板，形成在金属基板上的电绝缘陶瓷层，在其选定区域中形成在陶瓷层上的图案化金属层形成在金属基板和陶瓷层之间的界面附近的区域中的第一混合层，以及形成在陶瓷层和金属层之间的界面附近的区域的第二混合层，并且该盖包括金属基板，至少形成在与金属基板相对的金属基板的边缘的边缘部分中的电绝缘陶瓷层，以及形成在金属基板和皮层之间的界面附近的区域中的混合层。

3. 发明授权

US5250327A Composite substrate and process for producing the same 失效
标题翻译：复合基板及其制造方法
公开(公告)号：US5250327A
公开(公告)日：1993-10-05
申请号：US390001
申请日：1989-08-07
申请人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo
发明人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo
IPC分类号： H01L21/48 , H01L23/14 , B05D3/06 , B05D5/12 , C23C14/00
CPC分类号： H01L23/142 , H01L21/4846 , H01L2924/0002
摘要： A composite substrate comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a metal layer formed on the ceramic layer, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, each of the mixed layers being composed of the materials of the layers situated on both sides thereof. The composite substrate may comprise a plurality of electrically insulating dissimilar ceramic layers between the metal substrate and the metal layer, and a mixed layer formed in an area near the interface between any two of the adjacent ceramic layers.
摘要翻译：复合基板包括金属基板，形成在金属基板上的电绝缘陶瓷层，形成在陶瓷层上的金属层，形成在金属基板和陶瓷层之间的界面附近的区域中的第一混合层，以及第二混合层形成在陶瓷层和金属层之间的界面附近的区域中，每个混合层由位于其两侧的层的材料构成。复合衬底可以包括在金属衬底和金属层之间的多个电绝缘的不同的陶瓷层，以及形成在任何两个相邻的陶瓷层之间的界面附近的区域中的混合层。

4. 发明授权

US5009923A Method of forming diamond film 失效
标题翻译：形成金刚石薄膜的方法
公开(公告)号：US5009923A
公开(公告)日：1991-04-23
申请号：US544800
申请日：1990-06-27
申请人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo
发明人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo
IPC分类号： C23C14/06 , C23C14/22 , C30B23/02
CPC分类号： C23C14/22 , C23C14/0611 , C30B23/02 , C30B29/04
摘要： A method of forming a diamond film on a substrate comprises the steps of depositing carbon on said substrate in vacuum by vapor deposition, and irradiating accelerated ions onto said substrate, said ions being obtained by ionizing a gas composed of at least one of a hydrogen gas, inert gases, hydrocarbon gases, organic compound gases and silicon base gases.

5. 发明授权

US4866746A Coated material and X-ray exposure mask 失效
标题翻译：涂层材料和X射线曝光面膜
公开(公告)号：US4866746A
公开(公告)日：1989-09-12
申请号：US92537
申请日：1987-09-03
申请人： Takahiro Nakahigashi , Yasunori Ando , Eiji Kamijo
发明人： Takahiro Nakahigashi , Yasunori Ando , Eiji Kamijo
IPC分类号： C23C14/06 , C23C16/34 , G21F1/08
CPC分类号： G21F1/08 , C23C14/0641 , C23C14/0647 , C23C16/34
摘要： A coated material comprises: a substrate; and a film containing boron, nitrogen and one selected from a group consisting of silicon and germanium, the film being formed on the substrate. An X-ray exposure mask of the present invention comprises: an X-ray absorbent layer; an X-ray permeable support layer for supporting the absorbent layer; and a mask support member for supporting the support layer; wherein the support layer contains boron and nitrogen and one element selected from a group consisting of silicon and germanium.
摘要翻译：涂覆材料包括：基材; 以及含有硼，氮和选自硅和锗的一种的膜，该膜形成在基板上。本发明的X射线曝光掩模包括：X射线吸收层; 用于支撑吸收层的X射线透过支撑层; 以及用于支撑所述支撑层的掩模支撑构件; 其中所述载体层含有硼和氮，以及一种选自硅和锗的元素。

6. 发明授权

US4828870A Method of forming a thin aluminum film 失效
标题翻译：形成薄铝膜的方法
公开(公告)号：US4828870A
公开(公告)日：1989-05-09
申请号：US126014
申请日：1987-11-27
申请人： Yasunori Ando , Kiyoshi Ogata
发明人： Yasunori Ando , Kiyoshi Ogata
IPC分类号： C23C14/14 , C04B41/51 , C04B41/88 , C23C14/18 , C23C14/22 , C23C14/24
CPC分类号： C04B41/009 , C04B41/51 , C04B41/88 , C23C14/18 , C23C14/22 , C04B2111/00844
摘要： A method for depositing a thin aluminum film in a vacuum on a surface of a substrate which comprises the steps of:(a) Irradiating the surface of the substrate with a beam of ions of an inert gas, having a kinetic energy ranging from 100 eV to 1,000 eV at an angle of incidence ranging from about 0.degree. to 60.degree. to a normal of the surface.(b) Depositing vaporized aluminum on the surface of the substrate, in which the ratio of the amount of ions irradiating the surface to the amount of vapor deposited on the surface ranges from about 0.5% to 30% and wherein the temperature of the substrate ranges from about room temperature to 300.degree. C.
摘要翻译：一种在真空中沉积薄铝膜的方法，该方法包括以下步骤：（a）用具有100eV的动能的惰性气体离子束照射衬底的表面至约1000eV，其入射角为约0°至60°，至表面法线。（b）在基板的表面上沉积蒸发的铝，其中照射表面的离子的量与沉积在表面上的气相的量的比率为约0.5％至30％，并且其中基板的温度范围从约室温到300℃

7. 发明申请

US20130181291A1 SILICON OXYNITRIDE FILM AND METHOD FOR FORMING SAME, AND SEMICONDUCTOR DEVICE 有权
标题翻译：硅氧烷膜及其形成方法和半导体器件
公开(公告)号：US20130181291A1
公开(公告)日：2013-07-18
申请号：US13823108
申请日：2010-12-08
申请人： Yasunori Ando , Eiji Takahashi , Masaki Fujiwara
发明人： Yasunori Ando , Eiji Takahashi , Masaki Fujiwara
IPC分类号： H01L21/02 , H01L29/786
CPC分类号： H01L21/0214 , C23C16/30 , C23C16/308 , H01L21/02274 , H01L29/4908 , H01L29/786 , H01L29/78606 , H01L29/7869
摘要： An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (0), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.
摘要翻译：提供不含氢或游离氟并具有良好膜性能的绝缘膜。氧氮化硅膜包括硅，氮，氧和氟，其中氮（N），氧（0）和氟（N）的总（N + O + F）的总元素（N + O + F）/ Si （F）与硅（Si）的比例在1.93〜1.48的范围内，氮氧化硅膜的元素百分比为0.34〜0.41，氮的元素百分比为0.10〜0.22，元素的比例氧的范围为0.14〜0.38，氟的元素百分比为0.17〜0.24。可以通过感应耦合型等离子体CVD在基板上形成膜，由此通过使用四氟化硅气体，氮气和氧气作为原料气体的感应耦合产生等离子体。

8. 发明授权

US08394232B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08394232B1
公开(公告)日：2013-03-12
申请号：US13592346
申请日：2012-08-23
申请人： Yasunori Ando
发明人： Yasunori Ando
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/3211 , C23C16/402 , C23C16/507
摘要： The plasma processing including an antenna which is substantially straight in a plan view of the antenna is provided. The antenna includes two rectangular conductor plates disposed on a same plane along a surface of a substrate in a manner that the two rectangular conductor plates are parallel to each other with an interval therebetween. An end of a side in a longitudinal direction of each of the two rectangular conductor plates is connected through a conductor so as to form a go-and-return conductor, wherein the high frequency current flows in the two rectangular conductor plates in opposite directions. Notches are formed at the sides of the two rectangular conductor plates adjacent to the interval and the notches facing each other define an opening. The notches form the openings. The openings are separately arranged in the longitudinal direction of the antenna.
摘要翻译：提供包括在天线的平面图中基本上是直的天线的等离子体处理。天线包括沿着基板的表面设置在同一平面上的两个矩形导体板，使得两个矩形导体板之间具有间隔彼此平行。两个矩形导体板中的每一个的纵向方向上的一端通过导体连接，以便形成回流导体，其中高频电流在两个矩形导体板中以相反的方向流动。在与间隔相邻的两个矩形导体板的侧面形成有凹口，并且彼此面对的凹口限定开口。凹口形成开口。开口沿天线的纵向分开设置。

9. 发明授权

US08372239B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08372239B2
公开(公告)日：2013-02-12
申请号：US13449304
申请日：2012-04-17
申请人： Takanori Tsunoda , Yoshio Matsubara , Yasunori Ando , Masayuki Tsuji
发明人： Takanori Tsunoda , Yoshio Matsubara , Yasunori Ando , Masayuki Tsuji
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/3211
摘要： An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.
摘要翻译：提供了一种电感耦合等离子体（ICP）型等离子体处理装置。等离子体处理包括在天线的平面图中基本上是直的天线。当对天线施加高频电流以在真空容器中形成电场时，产生等离子体，以对衬底进行等离子体处理。该天线包括在上下方向上彼此紧密配置的两个去耦导体，其中上下方向垂直于衬底的表面，并且施加高频电流以在相对方向之间流动两个回归导体。间隔由上下方向上的两个去导体之间的距离限定，在天线的纵向方向上变化。

10. 发明授权

US06903039B2 Methods for making microporous ceramic materials 有权
标题翻译：制造微孔陶瓷材料的方法
公开(公告)号：US06903039B2
公开(公告)日：2005-06-07
申请号：US10367713
申请日：2003-02-19
申请人： Balagopal N. Nair , Yasunori Ando , Hisatomi Taguchi , Shigeo Nagaya , Kiyoshi Komura
发明人： Balagopal N. Nair , Yasunori Ando , Hisatomi Taguchi , Shigeo Nagaya , Kiyoshi Komura
IPC分类号： C04B38/00 , B01D71/02 , C01B3/50 , C01B21/068 , C04B35/589
CPC分类号： C04B38/0022 , B01D39/2093 , B01D67/0046 , B01D71/02 , B01D2323/08 , C01B3/503 , C01B2203/0227 , C01B2203/041 , C01B2203/0465 , C04B35/584 , C04B35/589 , C04B35/6264 , C04B35/62655 , C04B35/6267 , C04B35/6268 , C04B2111/00793 , C04B2235/3217 , C04B2235/3225 , C04B2235/3873 , C04B2235/465 , C04B2235/5409 , C04B2235/668 , C04B2235/94 , Y10T428/249969 , C04B38/0054 , C04B41/4582
摘要： The present invention provides a method for making a microporous ceramic material and includes the steps of (a) preparing a starting material for firing comprising a nonoxide ceramic precursor containing silicon as an essential component; (b) heating the starting material for firing in an atmosphere containing at least 1 mol % of hydrogen so as to form microporous ceramic product; and (c) cooling the microporous ceramic product.
摘要翻译：本发明提供一种制造微孔陶瓷材料的方法，包括以下步骤：（a）制备包含以硅为主要成分的非氧化物陶瓷前体的焙烧原料; （b）在含有至少1mol％氢气的气氛中加热焙烧原料以形成微孔陶瓷产品; 和（c）冷却微孔陶瓷产品。

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