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1. 发明授权

US06900439B2 Gas leakage detection system, gas leakage detection method and semiconductor manufacturing apparatus 有权
标题翻译：气体泄漏检测系统，气体泄漏检测方法和半导体制造装置
公开(公告)号：US06900439B2
公开(公告)日：2005-05-31
申请号：US10204322
申请日：2001-02-23
申请人： Kiyoshi Komiyama , Shinichi Watanabe , Kazunori Gotoda
发明人： Kiyoshi Komiyama , Shinichi Watanabe , Kazunori Gotoda
IPC分类号： G01N21/35 , G01N21/3504 , G01J5/02
CPC分类号： G01N21/3504 , G01N2021/3595
摘要： Components of sampled gases are analyzed by a Fourier transform infrared spectrophotometer 28. It is determined whether or not the analyzed gases include at least one kind of specific gases equal to or more than a predetermined quantity. In a case where mixed gases include at least one kind of the specific gases equal to or more than the predetermined quantity, a controller 30 supplies an operation display monitor 31 with a signal indicating leakage of the kind of the specific gases. Hence, it is possible to realize detection by kind of the gases with high accuracy irrespective of the kind of leaked gas.
摘要翻译：取样气体的成分由傅里叶变换红外分光光度计28分析。确定所分析的气体是否包括等于或大于预定量的至少一种特定气体。在混合气体包括等于或大于预定量的特定气体中的至少一种的情况下，控制器30向操作显示监视器31提供表示特定气体种类的泄漏的信号。因此，无论泄漏气体的种类如何，都可以高精度地实现气体的种类的检测。

2. 发明授权

US06942891B2 Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device 有权
标题翻译：用于监控工艺废气的装置和方法，半导体制造装置以及用于控制半导体制造装置的系统和方法
公开(公告)号：US06942891B2
公开(公告)日：2005-09-13
申请号：US10760581
申请日：2004-01-21
申请人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
发明人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
IPC分类号： C23C16/44 , C23C16/52 , H01L21/205 , H01L21/302 , H01L21/3065 , B05D5/12
CPC分类号： C23C16/52 , C23C16/44 , C23C16/4412
摘要： Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.
摘要翻译：对工艺废气进行采样，并通过傅里叶变换红外分光仪（FT-IR）（26）分析工艺废气的成分。将分析结果与通过在参考工艺条件下执行的操作中产生的工艺废气的分析获得的参考分析结果进行比较。如果气体组分的量变化到围绕从参考分析结果获得的参考值设定的预定范围之外的量，则输出指示处理误差的信号。代替输出指示过程错误的信号，可以自动调整过程条件。

3. 发明授权

US06582296B2 Ventilating method and ventilating system for semiconductor manufacturing apparatuses 失效
标题翻译：半导体制造装置的通风方法及通风系统
公开(公告)号：US06582296B2
公开(公告)日：2003-06-24
申请号：US09873101
申请日：2000-12-20
申请人： Kiyoshi Komiyama
发明人： Kiyoshi Komiyama
IPC分类号： F24F316
CPC分类号： F24F7/00 , F24F3/161 , Y10S414/135
摘要： A semiconductor manufacturing apparatus ventilating system can reduce energy consumption with respect to air-conditioning and a power spent for transporting air in a clean room by minimizing an amount of circulating air in a clean room. The clean room air, which is supplied to the clean room, is introduced into an air circulating system including the semiconductor manufacturing apparatus. The air circulating system is separated from an atmosphere in the clean room. The clean room air in the air circulating system is circulated within the air circulating system.
摘要翻译：半导体制造装置通风系统可以减少空调方面的能量消耗，并且通过最小化洁净室中的循环空气的量来消耗在洁净室中运送空气的功率。供应到洁净室的洁净室空气被引入到包括半导体制造装置的空气循环系统中。空气循环系统与洁净室中的大气分离。空气循环系统中的洁净室空气在空气循环系统内循环。

4. 发明授权

US08261762B2 Processing gas supplying system and processing gas supplying method 有权
标题翻译：加工气体供应系统和加工气体供应方法
公开(公告)号：US08261762B2
公开(公告)日：2012-09-11
申请号：US12093491
申请日：2007-08-10
申请人： Kiyoshi Komiyama , Akitoshi Tsuji , Takuya Fujiwara
发明人： Kiyoshi Komiyama , Akitoshi Tsuji , Takuya Fujiwara
IPC分类号： H01L21/30 , B05C11/00
CPC分类号： F17C7/00 , F17C5/06 , F17C2205/0326 , F17C2205/0335 , F17C2205/0352 , F17C2221/016 , F17C2223/0123 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/0443 , F17C2250/0626 , F17C2250/0636 , F17C2250/0673 , F17C2260/044 , F17C2260/053 , F17C2270/0518 , Y10T137/0419 , Y10T137/4259
摘要： A gas supplying system includes a processing gas supply pipe for supplying a processing gas from a gas cylinder 210 into a processing apparatus and a nonreactive gas supply source 230 for supplying a nonreactive gas into the gas supply pipe. While the system is in operation, the gas supply pipe is charged with the nonreactive gas and a control unit is in a standby state. If a processing gas use start signal is received from the processing apparatus, the system exhausts the nonreactive gas from the gas supply pipe to create a vacuum therein; charges the gas supply pipe with the processing gas; and starts a supply of the processing gas from the processing gas supply source. If a processing gas use finish signal is received from the processing apparatus, the system stops the supply of the processing gas from the processing gas supply source; exhausts the processing gas from the gas supply pipe to create a vacuum therein; and charges the gas supply pipe with the nonreactive gas. Accordingly, the gas pipe from the processing gas supply source to the processing apparatus can be kept charged with the nonreactive gas when the processing gas is not used in the processing apparatus. Therefore, a deposit generation inside the gas pipe can be prevented during that period.
摘要翻译：气体供给系统包括用于将来自气瓶210的处理气体供给到处理装置中的处理气体供给管和用于向气体供给管供给非反应性气体的非反应性气体供给源230。当系统运行时，气体供给管上装有非反应气体，控制单元处于待机状态。如果从处理装置接收到处理气体使用开始信号，则系统从气体供给管排出非反应性气体，以在其中产生真空; 用加气处理供气管; 并开始从处理气体供应源供应处理气体。如果从处理装置接收到处理气体使用完成信号，则系统停止从处理气体供应源供应处理气体; 从气体供给管排出处理气体以在其中产生真空; 并用非反应性气体对气体供给管进行充电。因此，当在处理装置中不使用处理气体时，从处理气体供给源到处理装置的气体管道可以保持充满非反应性气体。因此，能够防止在该期间内的气体管内的沉积物。

5. 发明授权

US06716477B1 Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device 有权
标题翻译：用于监控工艺废气的方法和装置，半导体制造装置以及用于管理半导体制造装置的方法和系统
公开(公告)号：US06716477B1
公开(公告)日：2004-04-06
申请号：US10111481
申请日：2002-04-25
申请人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
发明人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
IPC分类号： B05D512
CPC分类号： C23C16/52 , C23C16/44 , C23C16/4412
摘要： Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.
摘要翻译：对工艺废气进行采样，并通过傅里叶变换红外分光仪（FT-IR）（26）分析工艺废气的成分。将分析结果与通过在参考工艺条件下执行的操作中产生的工艺废气的分析获得的参考分析结果进行比较。如果气体组分的量变化到围绕从参考分析结果获得的参考值设定的预定范围之外的量，则输出指示处理误差的信号。代替输出指示过程错误的信号，可以自动调整过程条件。

6. 发明授权

US06530136B1 Method for transporting and installing a semiconductor manufacturing apparatus 有权
标题翻译：运输和安装半导体制造装置的方法
公开(公告)号：US06530136B1
公开(公告)日：2003-03-11
申请号：US09658500
申请日：2000-09-08
申请人： Kiyoshi Komiyama
发明人： Kiyoshi Komiyama
IPC分类号： B23Q300
CPC分类号： H01L21/67196 , H01L21/67017 , Y10T29/49758 , Y10T29/4981 , Y10T29/49895
摘要： An apparatus substitute is carried and installed in a clean room prior to installation of a semiconductor manufacturing apparatus. The apparatus substitute is composed of separate assembling boxes and is provided with tentative utility connection parts having the same specifications with respect to utility connection parts of the semiconductor manufacturing apparatus. Each of the utility connection parts is temporarily connected to one of a utility line via respective joint pipes. In the utility connection works or temporary connection, an apparatus installation position can be adjusted; a position or a size of a support plate of a floor can be corrected; a route of a utility line or a position can be corrected; or an inspection with respect to each utility line can be performed. After the completion of the inspection of the temporary connection, the utility lines are disconnected from the respective utility connection parts, and the apparatus substitute is divided into the individual boxes and removed from the clean room.
摘要翻译：装置替代品在安装半导体制造装置之前被运送并安装在洁净室中。设备替代品由单独的组装箱组成，并且具有相对于半导体制造装置的公用连接部件具有相同规格的临时公用连接部件。每个公用设施连接部分经由各自的连接管道临时连接到公用线路之一。在实用连接工程或临时连接中，可以调整设备安装位置; 可以校正地板的支撑板的位置或尺寸; 公用线路或位置的路线可以被校正; 或者可以执行关于每条公用事业线的检查。在临时连接检查完成后，将公用设施线路与相应的公用设施连接部分断开，将设备替代品分成各个箱体，并从洁净室中取出。

7. 发明申请

US20090170332A1 PROCESSING GAS SUPPLYING SYSTEM AND PROCESSING GAS SUPPLYING METHOD 有权
标题翻译：加工气体供应系统和加工气体供应方法
公开(公告)号：US20090170332A1
公开(公告)日：2009-07-02
申请号：US12093491
申请日：2007-08-10
申请人： Kiyoshi Komiyama , Akitoshi Tsuji , Takuya Fujiwara
发明人： Kiyoshi Komiyama , Akitoshi Tsuji , Takuya Fujiwara
IPC分类号： H01L21/306 , B05C11/00 , H01L21/30
CPC分类号： F17C7/00 , F17C5/06 , F17C2205/0326 , F17C2205/0335 , F17C2205/0352 , F17C2221/016 , F17C2223/0123 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/0443 , F17C2250/0626 , F17C2250/0636 , F17C2250/0673 , F17C2260/044 , F17C2260/053 , F17C2270/0518 , Y10T137/0419 , Y10T137/4259
摘要： A gas supplying system includes a processing gas supply pipe for supplying a processing gas from a gas cylinder 210 into a processing apparatus and a nonreactive gas supply source 230 for supplying a nonreactive gas into the gas supply pipe. While the system is in operation, the gas supply pipe is charged with the nonreactive gas and a control unit is in a standby state. If a processing gas use start signal is received from the processing apparatus, the system exhausts the nonreactive gas from the gas supply pipe to create a vacuum therein; charges the gas supply pipe with the processing gas; and starts a supply of the processing gas from the processing gas supply source. If a processing gas use finish signal is received from the processing apparatus, the system stops the supply of the processing gas from the processing gas supply source; exhausts the processing gas from the gas supply pipe to create a vacuum therein; and charges the gas supply pipe with the nonreactive gas. Accordingly, the gas pipe from the processing gas supply source to the processing apparatus can be kept charged with the nonreactive gas when the processing gas is not used in the processing apparatus. Therefore, a deposit generation inside the gas pipe can be prevented during that period.
摘要翻译：气体供给系统包括用于将来自气瓶210的处理气体供给到处理装置中的处理气体供给管和用于向气体供给管供给非反应性气体的非反应性气体供给源230。当系统运行时，气体供给管上装有非反应气体，控制单元处于待机状态。如果从处理装置接收到处理气体使用开始信号，则系统从气体供给管排出非反应性气体，以在其中产生真空; 用加气处理供气管; 并开始从处理气体供应源供应处理气体。如果从处理装置接收到处理气体使用完成信号，则系统停止从处理气体供应源供应处理气体; 从气体供给管排出处理气体以在其中产生真空; 并用非反应性气体对气体供给管进行充电。因此，当在处理装置中不使用处理气体时，从处理气体供给源到处理装置的气体管道可以保持充满非反应性气体。因此，能够防止在该期间内的气体管内的沉积物。

8. 发明授权

US07229843B2 Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device 有权
标题翻译：用于监控工艺废气的装置和方法，半导体制造装置以及用于控制半导体制造装置的系统和方法
公开(公告)号：US07229843B2
公开(公告)日：2007-06-12
申请号：US11062470
申请日：2005-02-22
申请人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
发明人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
IPC分类号： H01L21/00
CPC分类号： C23C16/52 , C23C16/44 , C23C16/4412
摘要： Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.
摘要翻译：对工艺废气进行采样，并通过傅里叶变换红外分光仪（FT-IR）（26）分析工艺废气的成分。将分析结果与通过在参考工艺条件下执行的操作中产生的工艺废气的分析获得的参考分析结果进行比较。如果气体组分的量变化到围绕从参考分析结果获得的参考值设定的预定范围之外的量，则输出指示处理误差的信号。代替输出指示过程错误的信号，可以自动调整过程条件。

9. 发明授权

US07212977B2 Managing apparatus and managing method of a semiconductor manufacturing apparatus 有权
标题翻译：管理半导体制造装置的装置和管理方法
公开(公告)号：US07212977B2
公开(公告)日：2007-05-01
申请号：US09886475
申请日：2001-06-22
申请人： Akitoshi Tsuji , Osamu Suenaga , Kiyoshi Komiyama
发明人： Akitoshi Tsuji , Osamu Suenaga , Kiyoshi Komiyama
IPC分类号： G06Q99/00
CPC分类号： H01L21/67276 , G06Q30/0283 , G06Q50/06 , H01L21/67242 , H01L21/67253 , Y02A20/22 , Y02P90/84
摘要： Power consumption of electric equipment used in a semiconductor manufacturing apparatus (100) is obtained and the total amount is displayed as calories by a display means. The semiconductor manufacturing apparatus is configured so that the equipment is set up inside a housing (10). The amount of heat discharged from the inside to the outside (a clean room) via the housing is obtained, and further, the amount of heat removed by exhaust from the interior of the housing and the amount of heat removed by cooling water that cools the equipment is also obtained, and the total amount of heat is displayed. Additionally, factors pertaining to operating costs such as power consumption are measured and their cost obtained, the amount of power consumed is multiplied by a crude oil conversion coefficient to obtain the amount of CO2 generated, and the result is displayed. The factors to be measured are measured by a thermocouple, an anemometer and an power meter, and the measurements are input to a personal computer (6) via a conversion module (7).
摘要翻译：获得半导体制造装置（100）中使用的电气设备的功耗，并且通过显示装置将总量显示为卡路里。半导体制造装置被配置为使得设备被设置在壳体（10）内。通过外壳从内向外（洁净室）排出的热量得到，另外，从壳体内部排出的热量以及冷却水的冷却水除去的热量也可获得设备，并显示总热量。此外，测量与运行成本（如功耗）相关的因素，并获得其成本，消耗的功率量乘以原油转化系数以获得产生的CO 2的量，结果被展示。待测量的因素由热电偶，风速计和功率计测量，测量通过转换模块（7）输入个人计算机（6）。

10. 发明申请

US20050159899A1 Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device 有权
公开(公告)号：US20050159899A1
公开(公告)日：2005-07-21
申请号：US11062470
申请日：2005-02-22
申请人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
发明人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
IPC分类号： C23C16/44 , C23C16/52 , H01L21/205 , H01L21/302 , H01L21/3065 , G06F19/00
CPC分类号： C23C16/52 , C23C16/44 , C23C16/4412
摘要： Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.

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