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1. 发明授权

US5724041A Spread spectrum radar device using pseudorandom noise signal for detection of an object 失效
标题翻译：扩频雷达装置使用伪随机噪声信号检测物体
公开(公告)号：US5724041A
公开(公告)日：1998-03-03
申请号：US561985
申请日：1995-11-22
申请人： Kiyoshi Inoue , Haruhiko Ishizu , Ryuji Kohno
发明人： Kiyoshi Inoue , Haruhiko Ishizu , Ryuji Kohno
IPC分类号： G01S7/02 , G01S7/285 , G01S13/28 , G01S13/34 , G01S13/58 , G01S13/93
CPC分类号： G01S13/931 , G01S13/346 , G01S13/584 , G01S7/285 , G01S13/284 , G01S2013/9375
摘要： A radar device transmits by a transmitting part a wave whose band is spread by a PN code from a PN generator, receives at a receiving part a reflected wave from an object based on the wave and detects the object by detecting correlation between the received signal and the PN code. In this radar device, the received signal which is spread to a wide range is converted to a low-frequency band which is easy to be measured by a down converter so that a signal is generated when correlation is made by a delay of the PN code from a delay circuit, and generates a pulse signal through waveform shaping of the signal to detect the object and to measure its relative speed and distance at a processing part according to the pulse signal and the delay time.
摘要翻译：雷达装置由发射部分发送波段，其波段由PN发生器通过PN码扩展，在接收部分接收基于波的对象的反射波，并通过检测接收信号和 PN码。在该雷达装置中，扩展到宽范围的接收信号被转换为易于由下变频器测量的低频带，使得当通过PN码的延迟进行相关时产生信号并且通过信号的波形整形产生脉冲信号，以检测物体，并根据脉冲信号和延迟时间测量处理部分的相对速度和距离。

2. 发明授权

US5959571A Radar device 失效
标题翻译：雷达设备
公开(公告)号：US5959571A
公开(公告)日：1999-09-28
申请号：US981054
申请日：1997-12-11
申请人： Yasushi Aoyagi , Toshihide Fukuchi , Kiyoshi Inoue , Ryuji Kohno
发明人： Yasushi Aoyagi , Toshihide Fukuchi , Kiyoshi Inoue , Ryuji Kohno
IPC分类号： G01S7/02 , G01S13/32 , G01S13/42 , G01S13/93
CPC分类号： G01S13/325 , G01S13/42 , G01S2013/9375
摘要： A radar device transmits an electric wave whose band is spread by a PN code, receives a reflected wave of the electric wave from an object 10, detects correlation between a received signal and a PN code which is delayed, and thereby detects the object. A receiving part 18 connects three receiving antennas 16a.about.16c sequentially one by one, thereby to receive a reflected wave from an object. The three receiving antennas are arranged having their directions so staggered that their antenna beam patterns partly overlap with each other. A correlation detection circuit 19 detects such a slide width that a value of correlation between a received signal received by each of the antennas and the PN code exceeds a predetermined threshold. An operation part 12 obtains an azimuth of an object based on the detected slide width and beam pattern characteristics of the antennas.
摘要翻译： PCT No.PCT / JP97 / 10372 Sec。 371 1997年12月11日第 102（e）日期1997年12月11日PCT 1997年4月22日提交PCT公布。公开号WO97 / 40400 PCT 日期1997年10月30日雷达装置发送带宽由PN码扩展的电波，从对象10接收电波的反射波，检测接收信号与被延迟的PN码之间的相关性，从而检测物体。接收部分18依次连接三个接收天线16a差分16c，从而接收来自物体的反射波。三个接收天线被布置成具有如此交错的方向，使得它们的天线波束图案彼此部分重叠。相关检测电路19检测由每个天线接收的接收信号与PN码之间的相关值超过预定阈值的滑动宽度。操作部分12基于检测到的天线的滑动宽度和波束图案特性来获得对象的方位角。

3. 发明授权

US09535383B2 Image forming apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US09535383B2
公开(公告)日：2017-01-03
申请号：US13087482
申请日：2011-04-15
申请人： Kiyoshi Inoue
发明人： Kiyoshi Inoue
IPC分类号： G03G15/36 , H04N1/00 , H04N1/38 , H04N1/387 , G03G15/00
CPC分类号： B41J13/0009 , G03G15/36 , G03G15/50 , G03G15/502 , G03G2215/00569 , G03G2215/00582 , G06F3/1218 , G06F3/1219 , H04N1/00002 , H04N1/00015 , H04N1/00031 , H04N1/00053 , H04N1/00063 , H04N1/3873 , H04N2201/0094
摘要： When trial printing is executed in a repeat printing mode, trial printing is performed in size of an image of one piece in a layout in which a plurality of images are supposed to be printed in the repeat printing mode normally. A user who has checked a finished state of the trial printing sets, when the finished state is in a desired state, the recording paper on which the trial printing is performed to the paper feed portion again and executes the repeat printing. Thereby, in a blank space excluding a print image which is printed with a first time trial printing, a scheduled quantity of a plurality of images are repeatedly printed.
摘要翻译：当在重复打印模式下执行试打印时，在重复打印模式中正常地应该以多张图像被打印的布局中的一个图像的大小执行试打印。当完成状态处于期望状态时，已经检查了试纸打印的完成状态的用户再次对进纸部分进行了试纸打印的记录纸，并执行了重复打印。由此，除了在第一次试打印上打印的打印图像之外的空白空间中，重复打印多张图像的调度量。

4. 发明申请

US20120127792A1 SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS 有权
标题翻译：具有电可擦除和可编程半导体存储器单元的半导体存储器
公开(公告)号：US20120127792A1
公开(公告)日：2012-05-24
申请号：US13363400
申请日：2012-02-01
申请人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/10
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： In a nonvolatile memory apparatus, a system bus receives address, command, and/or control signals. Memory cells store bits of data by shifting a threshold voltage to one of plural ranges. In writing a first page, the threshold voltage of a first memory cell remains in a first range or shifts into a second range. In writing a second page, the threshold voltage remains in the first or second voltages, or shifts into a third range from the first range or into a fourth range from the second range. Before writing the second page, the memory reads data from the first memory cell for generating the second page writing data. A shifting direction of the threshold voltage from the first to the second range is the same as a shifting direction from the first to the third range.
摘要翻译：在非易失性存储装置中，系统总线接收地址，命令和/或控制信号。存储单元通过将阈值电压移位到多个范围之一来存储数据位。在写入第一页时，第一存储器单元的阈值电压保持在第一范围或者移位到第二范围。在写第二页时，阈值电压保持在第一或第二电压中，或者从第二范围移动到从第一范围到第四范围的第三范围。在写入第二页之前，存储器从第一存储器单元读取用于生成第二页写入数据的数据。从第一到第二范围的阈值电压的移动方向与从第一到第三范围的移动方向相同。

5. 发明申请

US20110122701A1 SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS 有权
公开(公告)号：US20110122701A1
公开(公告)日：2011-05-26
申请号：US13019048
申请日：2011-02-01
申请人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.

6. 发明授权

US07881111B2 Semiconductor memory having electrically erasable and programmable semiconductor memory cells 有权
标题翻译：具有电可擦除和可编程的半导体存储器单元的半导体存储器
公开(公告)号：US07881111B2
公开(公告)日：2011-02-01
申请号：US12504307
申请日：2009-07-16
申请人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
摘要翻译：一种可电气可变的非易失性多级存储器件和操作这种器件的方法，其包括将至少一个存储器单元的状态设置为从包括至少第一至第四电平状态的多个状态中选择的一种状态响应于要存储在一个存储器单元中的信息，并且通过利用在第二和第二电平状态之间设置的第一参考电平来读取存储单元的状态来确定读出状态是否对应于第一至第四电平状态之一第三电平状态，在第一和第二电平状态之间设置的第二参考电平和在第三和第四电平状态之间设置的第三参考电平。

7. 发明申请

US20100014351A1 SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS 有权
标题翻译：具有电可擦除和可编程半导体存储器单元的半导体存储器
公开(公告)号：US20100014351A1
公开(公告)日：2010-01-21
申请号：US12504307
申请日：2009-07-16
申请人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/04 , G11C7/00
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
摘要翻译：一种可电气可变的非易失性多级存储器件和操作这种器件的方法，其包括将至少一个存储器单元的状态设置为从包括至少第一至第四电平状态的多个状态中选择的一种状态响应于要存储在一个存储器单元中的信息，并且通过利用在第二和第二电平状态之间设置的第一参考电平来读取存储单元的状态来确定读出状态是否对应于第一至第四电平状态之一第三电平状态，在第一和第二电平状态之间设置的第二参考电平和在第三和第四电平状态之间设置的第三参考电平。

8. 发明授权

US07346425B2 Control device for use in injection molding machine 有权
标题翻译：用于注塑机的控制装置
公开(公告)号：US07346425B2
公开(公告)日：2008-03-18
申请号：US11410855
申请日：2006-04-26
申请人： Makoto Nishizawa , Yutaka Yamaguchi , Ryoji Tominaga , Yasumasa Sugiyama , Hiroshi Katsuta , Kunihiko Noda , Kiyoshi Inoue , Hirotaka Sekino
发明人： Makoto Nishizawa , Yutaka Yamaguchi , Ryoji Tominaga , Yasumasa Sugiyama , Hiroshi Katsuta , Kunihiko Noda , Kiyoshi Inoue , Hirotaka Sekino
IPC分类号： B29C45/00
CPC分类号： B29C45/76 , B29C2045/7606 , B29C2945/76033 , B29C2945/76083 , B29C2945/76187 , B29C2945/76498 , B29C2945/76531 , B29C2945/76551 , B29C2945/76595 , B29C2945/76668 , B29C2945/76939
摘要： A control device of an injection molding machine which injects a molten resin from an injection nozzle is provided with a display section in which a touch panel is disposed, and a human-machine interface section equipped with a general-purpose operating system, and the human-machine interface section is provided with at least a storage section to store set values which are various molding conditions for each mold article and a control section which controls the display of the display section. The interface section displays, on the display section, a main screen to change settings for the molding conditions stored in the storage section and a subscreen to display indications such as monitors, and also constantly displays a change switch for a change of the screen in a fixed region of the display section.
摘要翻译：从注射喷嘴喷射熔融树脂的注射成型机的控制装置设置有设置有触摸面板的显示部和配备有通用操作系统的人机界面部，人体机械接口部分设置有至少一个存储部分，用于存储用于每个模具制品的各种模制条件的设定值和控制显示部分的显示的控制部分。接口部分在显示部分上显示主屏幕，以改变存储在存储部分中的成型条件的设置和子屏幕以显示诸如监视器的指示，并且还不断地显示用于改变屏幕的改变开关显示部分的固定区域。

9. 发明授权

US07002847B2 Electrically alterable non-volatile multi-level memory device and method of operating such a device 失效
标题翻译：电动式可变非易失性多级存储装置及其操作方法
公开(公告)号：US07002847B2
公开(公告)日：2006-02-21
申请号：US11043114
申请日：2005-01-27
申请人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cell to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
摘要翻译：一种可电气可变的非易失性多级存储器件和操作这种器件的方法，其包括将存储器单元中的至少一个的状态设置为从包括至少第一至第四电平状态的多个状态中选择的一种状态响应于要存储在一个存储器单元中的信息，并且通过利用在第二和第二电平状态之间设置的第一参考电平来读取存储单元的状态来确定读出状态是否对应于第一至第四电平状态之一第三电平状态，在第一和第二电平状态之间设置的第二参考电平和在第三和第四电平状态之间设置的第三参考电平。

10. 发明授权

US06934141B2 Power supply device preventing inrush current 有权
标题翻译：电源装置防止浪涌电流
公开(公告)号：US06934141B2
公开(公告)日：2005-08-23
申请号：US10421693
申请日：2003-04-24
申请人： Yoshiomi Hamano , Kiyoshi Inoue , Junichi Kajiwara , Takao Horiuchi , Koichi Sumida , Akira Tamagaki , Akihiko Taniguchi , Hiroki Kai
发明人： Yoshiomi Hamano , Kiyoshi Inoue , Junichi Kajiwara , Takao Horiuchi , Koichi Sumida , Akira Tamagaki , Akihiko Taniguchi , Hiroki Kai
IPC分类号： H02H9/02 , H01H9/54 , H02H9/00 , H02J1/00 , H02M3/00 , H01H47/00
CPC分类号： H02H9/001 , H01H9/542
摘要： A power supply device 3 including: a current source 31 for supplying current to a load circuit 4 which operates on the supplied current, and a power switch unit 32 between the current source 31 and the load circuit 4 to control passage of current, wherein: the power switch unit 32 includes a switching element 323 connected in parallel with the open-close element 321, a power supply controller 33 including an open-close element controller 31 which controls operation of the open-close element 321 and a switching element controller 332 which controls operation of the switching element 323, and a voltage detector 34 which detects terminal voltage of the load circuit 4; and the power switch unit 32 turns on the switching element before supplying current to the load circuit and closes the open-close element when the terminal voltage of the load circuit becomes almost equal to supply voltage.
摘要翻译：一种电源装置3，包括：电流源31，用于向负载电路4提供电流，该负载电路4对所提供的电流进行操作，以及电流源31和负载电路4之间的电源开关单元32，用于控制电流的通过，其中：电源开关单元32包括与开闭元件321并联连接的开关元件323，电源控制器33，其包括控制开闭元件321的动作的开闭元件控制器31以及开关元件控制器332 控制开关元件323的动作以及检测负载电路4的端子电压的电压检测器34; 并且当负载电路的端子电压变得几乎等于电源电压时，电源开关单元32在向负载电路供电之前接通开关元件并闭合开 - 闭元件。

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