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    • 7. 发明申请
    • Moderate density, low density, and extremely low density single crystal alloys for high AN2 applications
    • 适用于高AN2应用的中等密度,低密度和极低密度单晶合金
    • US20080170961A1
    • 2008-07-17
    • US11638084
    • 2006-12-13
    • Venkatarama K. SeetharamanAlan D. Cetel
    • Venkatarama K. SeetharamanAlan D. Cetel
    • C22C19/05
    • F01D5/28C22C19/05C22C19/056C22C19/057C22F1/10F05D2300/607
    • A single crystal alloy for high AN2 applications has a composition consisting essentially of from 4.0 to 10 wt % chromium, from 1.0 to 2.5 wt % molybdenum, up to 5.0 wt % tungsten, from 3.0 to 8.0 wt % tantalum, from 5.5 to 6.25 wt % aluminum, from 6.0 to 17 wt % cobalt, up to 0.2 wt % hafnium, from 4.0 to 6.0 wt % rhenium, from 1.0 to 3.0 wt % ruthenium, and the balance nickel. Further, these single crystal alloys have a total tungsten and molybdenum content in the range of from 1.0 to 7.5 wt %, preferably from 2.0 to 7.0 wt %, a total refractory element content in the range of from 9.0 to 24.5 wt %, preferably from 13 to 22 wt %, a ratio of rhenium to a total refractory element content in the range of from 0.16 to 0.67, preferably from 0.20 to 0.45, a density in the range of from 0.300 to 0.325 lb/in3, and a specific creep strength in the range from 106×103 to 124×103 inches. These alloys provide (a) increased creep strength for a given density and (b) specific creep strengths as high as or higher than all 2nd generation single crystal alloys with a significant decrease in density.
    • 用于高AN 2应用的单晶合金具有基本上由4.0至10重量%的铬,1.0至2.5重量%的钼,至多5.0重量%的钨,3.0至8.0重量% 的钽,5.5至6.25重量%的铝,6.0至17重量%的钴,至多0.2重量%的铪,4.0至6.0重量%的铼,1.0至3.0重量%的钌,余量为镍。 此外,这些单晶合金的总钨和钼含量范围为1.0-7.5重量%,优选2.0-7.0重量%,总耐火元素含量为9.0-24.5重量%,优选为 13至22重量%,铼与总难熔元素含量的比例在0.16至0.67,优选0.20至0.45的范围内,密度在0.300至0.325lb / in 3范围内, SUP>,并且在106×10 3至124×3×3英寸的范围内的特异性蠕变强度。 这些合金提供(a)给定密度增加的蠕变强度和(b)具有高于或高于密度显着降低的所有第二代和第二代单晶合金的特定蠕变强度。
    • 9. 发明授权
    • Strip process for superalloys
    • 超级合金的剥离工艺
    • US08475598B2
    • 2013-07-02
    • US13331019
    • 2011-12-20
    • Alan D. CetelCurtis Heath RieweDwayne A. Braithwaite
    • Alan D. CetelCurtis Heath RieweDwayne A. Braithwaite
    • C23G1/02C23C16/00
    • C23F1/44C23C10/02C23C10/60C23C28/022C23C28/023C23C28/028F01D5/288F05D2300/132Y10T428/12882
    • A process for forming a coated substrate comprises providing a nickel base alloy substrate, depositing a chromium coating onto the nickel base alloy substrate and diffusing chromium from said coating into the substrate, applying a MCrAlY coating onto the nickel base alloy substrate and heat treating the substrate with the deposited chromium and the MCrAlY coating so that chromium diffuses into an outer region of the substrate. Further, in accordance with the present invention, a strip process for removing a coating from a substrate broadly comprises the steps of providing a nickel base alloy substrate having chromium diffused into an outer region and a MCrAlY coating deposited over the substrate with the diffused chromium and removing the MCrAlY coating by immersing the nickel base alloy substrate in an acid solution containing a sulfuric acid-hydrochloric acid mixture in water.
    • 一种形成涂覆基材的方法包括提供镍基合金基材,在镍基合金基材上沉积铬涂层并将铬从所述涂层扩散到基材中,将MCrAlY涂层施加到镍基合金基底上并热处理基板 与沉积的铬和MCrAlY涂层,使得铬扩散到衬底的外部区域。 此外,根据本发明,用于从基底去除涂层的剥离方法广泛地包括以下步骤:提供具有扩散到外部区域的铬的镍基合金基底和在基底上沉积有扩散的铬的MCrAlY涂层和 通过将镍基合金基材浸入含有硫酸 - 盐酸混合物的水溶液的酸溶液中来除去MCrAlY涂层。