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    • 1. 发明授权
    • Housing container for implant fixture
    • 用于植入物夹具的容器容器
    • US07921991B2
    • 2011-04-12
    • US12730391
    • 2010-03-24
    • Kimihiko SatoKinya NiheiMakoto Michiaki
    • Kimihiko SatoKinya NiheiMakoto Michiaki
    • A61C19/02B65D83/10
    • A61C8/0087
    • To minimize titanium materials and accurately and easily fix a dental implant fixture, a housing container includes a glass housing main body, a resin cap, and a resin implant fixture holding member, the cap includes a press part at an inner surface, the implant fixture holding member fits into the bottom side of the housing main body, the implant fixture holding member has, at an upper surface side, three or more groove parts formed radially from a center to an end side, and titanium plate-like guide parts which include, at the center side, projected portions slightly projecting from the upper surface, and include, at the radial end side, erected portions extending up to at least equal to or more than ⅓ of a height from a tip of the dental implant fixture to erect around an outer peripheral surface of the dental implant fixture are inserted in the groove parts.
    • 为了最小化钛材料并且准确且容易地固定牙种植体固定装置,容纳容器包括玻璃外壳主体,树脂盖和树脂植入物固定构件,所述盖在内表面具有加压部,植入物夹具 保持构件配合到壳体主体的底侧,植入物固定构件在上表面侧具有从中心到端部侧径向形成的三个以上的槽部,以及钛板状的引导部, 在中心侧,从上表面略微突出的突出部分,并且在径向端侧包括直立至少等于或大于牙科植入物固定器的尖端的高度的1/3的直立部分直立 围绕牙种植体固定装置的外周表面插入槽部分。
    • 3. 发明申请
    • SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
    • 固态成像装置和成像装置
    • US20100265372A1
    • 2010-10-21
    • US12760237
    • 2010-04-14
    • Kimihiko Sato
    • Kimihiko Sato
    • H04N5/335
    • H04N5/335H01L27/14605H01L27/14632H01L27/14636H04N5/374
    • A solid-state imaging device includes: a semiconductor substrate; photoelectric conversion units formed in array on the semiconductor substrate and forming a light receiving unit; and wiring sections formed in positions among the photoelectric conversion units. The wiring sections include wiring bodies formed by superimposing wiring layers on the light receiving unit and including a bottom wiring body on the semiconductor substrate side, a top wiring body on an uppermost side, and an intermediate wiring body between the bottom wiring body and the top wiring body, and contacts connecting the wiring bodies in order of vertical overlap, and in at least one of the wiring sections, the wiring bodies other than the bottom wiring body are superimposed while being shifted from a position right above the bottom wiring body, and amounts of shift of the intermediate wiring body and the contacts connected to the intermediate wiring body are the same.
    • 固体摄像器件包括:半导体衬底; 光电转换单元阵列形成在半导体衬底上并形成光接收单元; 以及形成在光电转换单元之间的位置的布线部。 布线部分包括通过在光接收单元上叠加布线层而形成的布线体,并且在半导体基板一侧包括底部布线体,最上侧的顶部布线体以及底部布线体和顶部之间的中间布线体 布线体和沿着垂直重叠的顺序连接布线体的触点,并且在至少一个布线部中,除了底布线体以外的布线体重叠,同时从底布线体的正上方位置移位, 中间布线体和连接到中间布线体的触点的移动量相同。
    • 8. 发明授权
    • Process for producing p-xylene
    • 生产对二甲苯的方法
    • US4377718A
    • 1983-03-22
    • US285464
    • 1981-07-21
    • Kimihiko SatoTokuji SakaiYasuo YamasakiTamio OnoderaKoji Sumitani
    • Kimihiko SatoTokuji SakaiYasuo YamasakiTamio OnoderaKoji Sumitani
    • B01J29/00C07C1/00C07C2/86C07C15/08C07C67/00C07C2/68
    • C07C2/864C07C2/865C07C2529/44Y02P20/52Y02P20/584
    • In a process for producing p-xylene which comprises catalytically methylating toluene with a methylating agent in the gaseous phase, the improvement wherein(a) said methylation is carried out continuously in a multi-stage reaction system consisting of a plurality of separate series-connected fixed catalyst layers without separating the resulting xylenes in an intermediate stage,(b) said toluene is fed together with hydrogen gas into only the first-stage fixed catalyst layer and passed successively through the subsequent fixed catalyst layers, the amount of toluene fed being such that the total weight hourly space velocity of toluene is from 1 to 300 hr.sup.-1,(c) said methylating agent is fed into each of said fixed catalyst layers, if desired together with hydrogen gas, the amount of the methylating agent fed into each catalyst layer being 0.01/t moles to 1/t moles, in which t is the number of methyl groups in the methylating agent, per mole of toluene fed into the first-stage catalyst layer, and the total amount of the methylating agent fed into all of the catalyst layers being within the range of 0.1/t moles to 2/t moles, in which t is as defined, per mole of toluene fed into the first-stage catalyst layer, and(d) each fixed catalyst layer is filled with a catalyst composed of a crystalline aluminosilicate containing magnesium oxide or lanthanide oxide.
    • 在一种生产对二甲苯的方法中,其包括在气相中用甲基化剂甲苯化甲苯,其中(a)所述甲基化在多级反应体系中连续进行,所述多级反应体系由多个单独的串联 固定的催化剂层,而不在中间阶段分离所得的二甲苯,(b)将所述甲苯与氢气一起进入第一级固定催化剂层,并依次通过随后的固定催化剂层,进料的甲苯的量 甲苯的总重小时空速为1〜300小时-1,(c)如果需要,将所述甲基化剂与氢气一起进料到每个所述固定催化剂层中,将甲基化剂加入到每个 催化剂层为每摩尔进料到第一阶段催化剂中的甲苯为0.01 / t摩尔至1 / t摩尔,其中t为甲基化剂中的甲基数 并且进料到所有催化剂层中的甲基化剂的总量在0.1 / t摩尔至2 / t摩尔的范围内,其中t定义为每摩尔进料到第一阶段催化剂中的甲苯 层,并且(d)每个固定的催化剂层填充有由含有氧化镁或镧系元素氧化物的结晶硅铝酸盐组成的催化剂。