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    • 1. 发明授权
    • Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same
    • 通过使用该有机半导体/绝缘聚合物和有机薄膜晶体管的共混物的相分离制造多层薄膜的方法
    • US08828793B2
    • 2014-09-09
    • US13140740
    • 2009-04-16
    • Kil Won ChoWi Hyoung Lee
    • Kil Won ChoWi Hyoung Lee
    • H01L51/40H01L51/00H01L51/05
    • H01L51/0558H01L51/0028H01L51/052
    • Disclosed is a method of manufacturing a multilayered thin film including a crystalline small molecular organic semiconductor layer and an insulating polymer layer for use in an organic thin film transistor through phase separation and annealing. The method includes applying a blend solution of organic semiconductor and insulating polymer on a substrate thus forming a vertically phase-separated thin film, which is then annealed so that the organic semiconductor contained in the insulating polymer layer is crystallized while being transferred to the surface layer. A high-performance organic thin film transistor fabricated using the same is also provided. The multilayered thin film in which the crystalline organic semiconductor layer is located on the insulating polymer layer through transfer and crystallization of the organic semiconductor can be used to fabricate the high-performance organic thin film transistor.
    • 公开了一种通过相分离和退火制造用于有机薄膜晶体管的结晶小分子有机半导体层和绝缘聚合物层的多层薄膜的制造方法。 该方法包括将有机半导体和绝缘聚合物的共混溶液施加在基底上,从而形成垂直相分离的薄膜,然后将其退火,使得包含在绝缘聚合物层中的有机半导体在被转移到表面层的同时被结晶 。 还提供了使用其制造的高性能有机薄膜晶体管。 结晶有机半导体层通过有机半导体的转移和结晶位于绝缘聚合物层上的多层薄膜可用于制造高性能有机薄膜晶体管。
    • 2. 发明授权
    • Method of manufacturing organic semiconductor nanofibrillar network dispersed in insulating polymer using a blend of organic semiconductor/insulating polymer and organic thin film transistor using the same
    • 使用有机半导体/绝缘聚合物和使用其的有机薄膜晶体管的混合物制造分散在绝缘聚合物中的有机半导体纳米纤维网络的方法
    • US08692236B2
    • 2014-04-08
    • US13140612
    • 2009-04-13
    • Kil Won ChoLong Zhen QiuWi Hyoung Lee
    • Kil Won ChoLong Zhen QiuWi Hyoung Lee
    • H01L35/24
    • H01L51/0036H01L51/0558
    • Disclosed is a method of manufacturing an organic semiconductor thin film for an organic thin film transistor from a blend of organic semiconductor/insulating polymer. The organic semiconductor thin film is configured such that organic semiconductor nanofibrils are dispersed in the form of a network in the insulating polymer layer. This organic semiconductor thin film is formed by dissolving the blend of organic semiconductor/insulating polymer in a marginal solvent of the organic semiconductor or mixed solvent thus preparing a blend solution, which is then applied while adjusting the solubility of the solution. An organic thin film transistor using the organic semiconductor thin film is also provided. The blend thin film of organic semiconductor/insulating polymer containing only about 3 wt % of the organic semiconductor exhibits electrical properties equal to those of a thin film composed exclusively of an organic semiconductor. The insulating polymer acts as a protective layer of the organic thin film transistor, thus obviating a need for forming the protective layer.
    • 公开了从有机半导体/绝缘聚合物的共混物制造有机薄膜晶体管的有机半导体薄膜的方法。 有机半导体薄膜被构造成使得有机半导体纳米原纤维以网状形式分散在绝缘聚合物层中。 该有机半导体薄膜通过将有机半导体/绝缘聚合物的共混物溶解在有机半导体或混合溶剂的边缘溶剂中而形成,由此制备共混溶液,然后在调节溶液的溶解度的同时施加。 还提供了使用有机半导体薄膜的有机薄膜晶体管。 仅含有约3重量%有机半导体的有机半导体/绝缘聚合物的共混薄膜具有与仅由有机半导体构成的薄膜的电性能相等的电性能。 绝缘聚合物作为有机薄膜晶体管的保护层,从而避免了形成保护层的需要。
    • 6. 发明申请
    • METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR NANOFIBRILLAR NETWORK DISPERSED IN INSULATING POLYMER USING A BLEND OF ORGANIC SEMICONDUCTOR/INSULATING POLYMER AND ORGANIC THIN FILM TRANSISTOR USING THE SAME
    • 使用有机半导体/绝缘聚合物和有机薄膜晶体管混合使用绝缘聚合物制造有机半导体纳米纤维网络的方法
    • US20120018708A1
    • 2012-01-26
    • US13140612
    • 2009-04-13
    • Kil Won ChoLong Zhen QiuWi Hyoung Lee
    • Kil Won ChoLong Zhen QiuWi Hyoung Lee
    • H01L51/30H01B1/12H01L51/40
    • H01L51/0036H01L51/0558
    • Disclosed is a method of manufacturing an organic semiconductor thin film for an organic thin film transistor from a blend of organic semiconductor/insulating polymer. The organic semiconductor thin film is configured such that organic semiconductor nanofibrils are dispersed in the form of a network in the insulating polymer layer. This organic semiconductor thin film is formed by dissolving the blend of organic semiconductor/insulating polymer in a marginal solvent of the organic semiconductor or mixed solvent thus preparing a blend solution, which is then applied while adjusting the solubility of the solution. An organic thin film transistor using the organic semiconductor thin film is also provided. The blend thin film of organic semiconductor/insulating polymer containing only about 3 wt % of the organic semiconductor exhibits electrical properties equal to those of a thin film composed exclusively of an organic semiconductor. The insulating polymer acts as a protective layer of the organic thin film transistor, thus obviating a need for forming the protective layer.
    • 公开了从有机半导体/绝缘聚合物的共混物制造有机薄膜晶体管的有机半导体薄膜的方法。 有机半导体薄膜被构造成使得有机半导体纳米原纤维以网状形式分散在绝缘聚合物层中。 该有机半导体薄膜通过将有机半导体/绝缘聚合物的共混物溶解在有机半导体或混合溶剂的边缘溶剂中而形成,由此制备共混溶液,然后在调节溶液的溶解度的同时施加。 还提供了使用有机半导体薄膜的有机薄膜晶体管。 仅含有约3重量%有机半导体的有机半导体/绝缘聚合物的共混薄膜具有与仅由有机半导体构成的薄膜的电性能相等的电性能。 绝缘聚合物作为有机薄膜晶体管的保护层,从而避免了形成保护层的需要。