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1. 发明授权

US5294387A Method of producing fiber-reinforced and particle-dispersion reinforced mullite composite material 失效
标题翻译：生产纤维增强和颗粒分散增强莫来石复合材料的方法
公开(公告)号：US5294387A
公开(公告)日：1994-03-15
申请号：US761657
申请日：1991-09-18
申请人： Kikuo Nakano , Kenji Oshima , Misao Iwata , Takao Yamada
发明人： Kikuo Nakano , Kenji Oshima , Misao Iwata , Takao Yamada
IPC分类号： C04B35/18 , C04B35/80 , C04B33/34 , C04B33/36
CPC分类号： C04B35/18 , C04B35/803
摘要： A fiber-reinforced ceramic composite material reinforced by particle dispersion with improved fracture toughness comprised of a mullite matrix, and fibers and same or different kind of ceramic fine particles both dispersed within the mullite matrix is produced by a method comprising: dispersing mullite particles forming a matrix in a solution dissolving an organometallic macromolecular substance to prepare an impregnating solution, continuously passing fibers through said impregnating solution to uniformly impregnate the fibers with said impregnating solution, laminating said fibers to provide a laminated body, converting the organometallic macromolecular substance within said laminated body into a nonmeltable state, and performing sintering (or press sintering) of said laminated body in an inert gas and/or nitrogen gas. By press sintering K.sub.Ic of 10 MN/m.sup.3/2 or more is achieved.
摘要翻译：通过包含分散在莫来石基质内的纤维和相同或不同种类的陶瓷细颗粒，通过具有改善的断裂韧性增强的颗粒分散体增强的纤维增强陶瓷复合材料通过包括：分散形成在溶解有机金属高分子物质的溶液中制备浸渍溶液，将纤维连续通过所述浸渍溶液，用所述浸渍溶液均匀浸渍纤维，层压所述纤维以提供层压体，将所述层压体内的有机金属高分子物质进入不可熔化状态，并且在惰性气体和/或氮气中进行所述层压体的烧结（或压制烧结）。通过压力烧结实现10MN / m3 / 2以上的KIc。

2. 发明授权

US5077243A Fiber-reinforced and particle-dispersion reinforced mullite composite material and method of producing the same 失效
标题翻译：纤维增强和颗粒分散增强复合材料及其生产方法
公开(公告)号：US5077243A
公开(公告)日：1991-12-31
申请号：US668676
申请日：1991-03-07
申请人： Kikuo Nakano , Kenji Oshima , Misao Iwata , Takao Yamada
发明人： Kikuo Nakano , Kenji Oshima , Misao Iwata , Takao Yamada
IPC分类号： C04B35/18 , C04B35/80
CPC分类号： C04B35/18 , C04B35/803
摘要： A fiber-reinforced ceramic composite material reinforced by particle dispersion with improved fracture toughness comprised of a mullite matrix, and fibers and same or different kind of ceramic fine particles both dispersed within the mullite matrix is produced by a method comprising: dispersing mullite particles forming a matrix in a solution dissolving an organometallic macromolecular substance to prepare an impregnating solution, continuously passing fibers through said impregnating solution to uniformly impregnate the fibers with said impregnating solution, laminating said fibers to provide a laminated body, converting the organometallic macromolecular substance within said laminated body into a nonmeltable state, and performing sintering (or press sintering) of said laminated body in an inert gas and/or nitrogen gas. By press sintering K.sub.Ic of 10 MN/m.sub.3/2 or more is achieved.
摘要翻译：通过包含分散在莫来石基质内的纤维和相同或不同种类的陶瓷细颗粒，通过具有改善的断裂韧性增强的颗粒分散体增强的纤维增强陶瓷复合材料通过包括：分散形成在溶解有机金属高分子物质的溶液中制备浸渍溶液，将纤维连续通过所述浸渍溶液，用所述浸渍溶液均匀浸渍纤维，层压所述纤维以提供层压体，将所述层压体内的有机金属高分子物质进入不可熔化状态，并且在惰性气体和/或氮气中进行所述层压体的烧结（或压制烧结）。通过压力烧结实现10MN / m3 / 2以上的KIc。

3. 发明授权

US09093356B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09093356B2
公开(公告)日：2015-07-28
申请号：US13336667
申请日：2011-12-23
申请人： Nobuhiko Ubahara , Kouichiroh Deguchi , Takao Yamada
发明人： Nobuhiko Ubahara , Kouichiroh Deguchi , Takao Yamada
IPC分类号： H01L33/20 , H01L27/15 , H01L33/00 , H01L33/08 , H01L33/38 , H01L33/40
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/405 , H01L2224/48463
摘要： A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.
摘要翻译：半导体发光元件包括依次层叠的包括p型半导体层，有源层和n型半导体层的半导体层叠体; 以及与半导体层叠体的p型半导体层侧接合的导电性支撑基板。通过穿透p型半导体层，有源层和n型半导体层的沟槽将半导体层叠体分成至少两个半导体区域。

4. 发明申请

US20120161184A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120161184A1
公开(公告)日：2012-06-28
申请号：US13338128
申请日：2011-12-27
申请人： Nobuhiro Ubahara , Kouichiroh Deguchi , Takao Yamada
发明人： Nobuhiro Ubahara , Kouichiroh Deguchi , Takao Yamada
IPC分类号： H01L33/50
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.
摘要翻译：半导体发光器件包括半导体发光元件，该半导体发光元件包括依次层叠的p型半导体层，有源层和n型半导体层的半导体层叠体和与p型半导体连接的导电性支撑基板半导体层叠体的层侧。半导体层叠体通过沟槽分成至少两个半导体区域。半导体发光器件还包括覆盖半导体发光元件的至少一部分的第一透明密封树脂，第一透明密封树脂包括多个第一荧光颗粒，每个第一荧光颗粒具有单独的平均粒径。沟槽的宽度小于第一荧光颗粒的各个平均粒径的总平均值。

5. 发明授权

US07205220B2 Gallium nitride based III-V group compound semiconductor device and method of producing the same 失效
标题翻译：基于氮化镓的III-V族化合物半导体器件及其制造方法
公开(公告)号：US07205220B2
公开(公告)日：2007-04-17
申请号：US11198465
申请日：2005-08-08
申请人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
发明人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
IPC分类号： H01L21/3205
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L31/1884 , H01L33/32 , H01L33/325 , H01L33/38 , H01L33/42 , H01L33/44 , H01L2224/04042 , H01L2224/05082 , H01L2224/05124 , H01L2224/05166 , H01L2224/05582 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05671 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48463 , H01L2224/49107 , H01L2224/49109 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/3011 , H01L2933/0016 , Y02E10/50 , H01L2924/00014 , H01L2924/00
摘要： A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要翻译：基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。欧姆电极由金属材料形成，并被退火。

6. 发明授权

US07042830B2 Phase-change optical information recording medium, and optical information recording and reproducing apparatus and method for the same 失效
公开(公告)号：US07042830B2
公开(公告)日：2006-05-09
申请号：US10192246
申请日：2002-07-09
申请人： Michiaki Shinotsuka , Hiroyuki Iwasa , Takao Yamada , Toshio Matsushita , Yasuo Kanbara , Shigeki Okauchi
发明人： Michiaki Shinotsuka , Hiroyuki Iwasa , Takao Yamada , Toshio Matsushita , Yasuo Kanbara , Shigeki Okauchi
IPC分类号： G11B7/24
CPC分类号： G11B7/257 , G11B7/0045 , G11B7/005 , G11B7/24 , G11B7/243 , G11B2007/25706 , G11B2007/2571 , G11B2007/25713 , G11B2007/25715
摘要： The present invention relates to a phase-change optical information recording medium comprising a recording layer which reversibly phase-changes between the crystalline phase and the amorphous phase by irradiation of a light having a recording wavelength of 390 to 430 nm, and a light transmittance thermally controllable layer showing a light transmittance varying according to temperature, in which the light transmittance increases at a rate of 0.2 to 0.7% /10° C.

7. 发明授权

US06904003B2 Information reproducing apparatus having cue point setting function 失效
标题翻译：具有提示点设定功能的信息再生装置
公开(公告)号：US06904003B2
公开(公告)日：2005-06-07
申请号：US10059356
申请日：2002-01-31
申请人： Masahiko Miyashita , Nobuo Ohyama , Takao Yamada , Hiroyasu Eguchi
发明人： Masahiko Miyashita , Nobuo Ohyama , Takao Yamada , Hiroyasu Eguchi
IPC分类号： G11B20/12 , G11B7/004 , G11B19/02 , G11B27/02 , G11B27/032 , G11B27/034 , G11B27/10 , G11B27/11 , G11B27/32 , G11B27/34 , G11B17/22
CPC分类号： G11B27/34 , G11B19/02 , G11B27/034 , G11B27/105 , G11B27/11 , G11B2220/2545 , G11B2220/2562 , G11B2220/65
摘要： An information reproducing apparatus is provided, which has a new cue point setting function with excellent operability for enabling new application form. Specifically, a cue point for specifying a start position for playing back a disc, and additional information or disc identification information corresponding to the cue point are stored in a backup memory. The additional information or the disc identification information is associated with the cue point and shown on a display according to a proper operation of operation buttons and a turning member. When the operation buttons and the turning member are properly operated, a system controller edits and adds the additional information, or edits the disc identification information in the backup memory. When the operation buttons and the turning member are properly operated to enter retrieval information, information stored in the backup memory is compared and retrieved, and the retrieved information associated with a cue point is shown on the display.
摘要翻译：提供了一种信息再现装置，其具有新的提示点设置功能，具有优异的可操作性，以实现新的应用形式。特别地，用于指定用于播放盘的开始位置的提示点以及与提示点相对应的附加信息或盘识别信息被存储在备份存储器中。根据操作按钮和转动构件的适当操作，附加信息或盘识别信息与提示点相关联并显示在显示器上。当操作按钮和转动构件被正确地操作时，系统控制器编辑并添加附加信息，或者将盘识别信息编辑在备用存储器中。当操作按钮和转动构件被正确地操作以输入检索信息时，比较和检索存储在备用存储器中的信息，并且在显示器上显示与提示点相关联的检索信息。

8. 发明申请

US20050100323A1 Signal processor 审中-公开
标题翻译：信号处理器
公开(公告)号：US20050100323A1
公开(公告)日：2005-05-12
申请号：US10950684
申请日：2004-09-28
申请人： Masahiko Miyashita , Takao Yamada , Nobuo Ohyama , Yoshitaka Nojima
发明人： Masahiko Miyashita , Takao Yamada , Nobuo Ohyama , Yoshitaka Nojima
IPC分类号： H04N5/93 , G11B20/10 , G11B27/00 , G11B27/10 , H04N5/783 , H04N5/85 , H04N9/804 , H04N5/781
CPC分类号： H04N5/783 , G11B27/005 , G11B27/105 , G11B2220/2529 , G11B2220/2545 , G11B2220/2562 , H04N5/85 , H04N9/8042
摘要： A signal processor comprises: a first buffer memory for outputting an image signal after storage; a second buffer memory for outputting an audio signal after storage; and a playback control section. The play back control section variably adjusts the playback progress speed of at least one of the image signal and the audio signal by individually controlling the output timings of the image signal and the audio signal from the first and second buffer memories in response to a given command.
摘要翻译：信号处理器包括：第一缓冲存储器，用于在存储之后输出图像信号; 用于在存储之后输出音频信号的第二缓冲存储器; 和播放控制部。回放控制部分通过响应于给定的命令单独地控制来自第一和第二缓冲存储器的图像信号和音频信号的输出定时来可变地调整图像信号和音频信号中的至少一个的播放进度速度。

9. 发明授权

US06838259B2 Process for producing kiss-1 peptide 失效
标题翻译：生产亲-1肽的方法
公开(公告)号：US06838259B2
公开(公告)日：2005-01-04
申请号：US10168050
申请日：2000-12-14
申请人： Masato Suenaga , Takao Yamada , Osamu Nishimura
发明人： Masato Suenaga , Takao Yamada , Osamu Nishimura
IPC分类号： C07K5/083 , C07K14/47 , C12N1/21 , C12N15/12 , C12N15/62 , C12P21/02 , C12P21/06 , C07K19/00
CPC分类号： C12P21/02 , C07K5/081 , C07K14/4703 , C07K2319/00 , C07K2319/75 , C12N15/62 , C12P21/06
摘要： A KiSS-1 peptide or a salt thereof can be produced in a large scale by subjecting a fusion protein or peptide in which a KiSS-1 peptide is ligated to the N-terminal of a protein or peptide having cysteine at the N-terminal, to the reaction of cleaving the peptide bond on the amino acid side of the cysteine residue.
摘要翻译：可以通过使连接有KiSS-1肽的融合蛋白或肽与N-半胱氨酸的蛋白质或N-肽的N-末端进行连接而大规模制备KiSS-1肽或其盐，涉及切割半胱氨酸残基的氨基酸侧上的肽键的反应。

10. 发明授权

US06610995B2 Gallium nitride-based III-V group compound semiconductor 失效
标题翻译：基于氮化镓的III-V族化合物半导体
公开(公告)号：US06610995B2
公开(公告)日：2003-08-26
申请号：US10292583
申请日：2002-11-13
申请人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
发明人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
IPC分类号： H01L2972
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L31/1884 , H01L33/32 , H01L33/325 , H01L33/38 , H01L33/42 , H01L33/44 , H01L2224/04042 , H01L2224/05082 , H01L2224/05124 , H01L2224/05166 , H01L2224/05582 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05671 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48463 , H01L2224/49107 , H01L2224/49109 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/3011 , H01L2933/0016 , Y02E10/50 , H01L2924/00014 , H01L2924/00
摘要： A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要翻译：基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。欧姆电极由金属材料形成，并被退火。

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