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1. 发明申请

US20120161184A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120161184A1
公开(公告)日：2012-06-28
申请号：US13338128
申请日：2011-12-27
申请人： Nobuhiro Ubahara , Kouichiroh Deguchi , Takao Yamada
发明人： Nobuhiro Ubahara , Kouichiroh Deguchi , Takao Yamada
IPC分类号： H01L33/50
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.
摘要翻译：半导体发光器件包括半导体发光元件，该半导体发光元件包括依次层叠的p型半导体层，有源层和n型半导体层的半导体层叠体和与p型半导体连接的导电性支撑基板半导体层叠体的层侧。半导体层叠体通过沟槽分成至少两个半导体区域。半导体发光器件还包括覆盖半导体发光元件的至少一部分的第一透明密封树脂，第一透明密封树脂包括多个第一荧光颗粒，每个第一荧光颗粒具有单独的平均粒径。沟槽的宽度小于第一荧光颗粒的各个平均粒径的总平均值。

2. 发明授权

US08878214B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08878214B2
公开(公告)日：2014-11-04
申请号：US13338128
申请日：2011-12-27
申请人： Nobuhiro Ubahara , Kouichiroh Deguchi , Takao Yamada
发明人： Nobuhiro Ubahara , Kouichiroh Deguchi , Takao Yamada
IPC分类号： H01L33/00 , H01L27/15 , H01L33/50 , H01L33/40
CPC分类号： H01L27/156 , H01L33/405 , H01L33/50 , H01L33/505 , H01L33/508 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2933/0016 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.
摘要翻译：半导体发光器件包括半导体发光元件，该半导体发光元件包括依次层叠的p型半导体层，有源层和n型半导体层的半导体层叠体和与p型半导体连接的导电性支撑基板半导体层叠体的层侧。半导体层叠体通过沟槽分成至少两个半导体区域。半导体发光器件还包括覆盖半导体发光元件的至少一部分的第一透明密封树脂，第一透明密封树脂包括多个第一荧光颗粒，每个第一荧光颗粒具有单独的平均粒径。沟槽的宽度小于第一荧光颗粒的各个平均粒径的总平均值。

3. 发明授权

US08030673B2 Nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：US08030673B2
公开(公告)日：2011-10-04
申请号：US12580030
申请日：2009-10-15
申请人： Nobuhiro Ubahara
发明人： Nobuhiro Ubahara
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/06 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13. The active layer 12 comprises a first well layer 14, second well layers 15 interposing the first well layer 14 and disposed at outermost sides among the well layers, and barrier layers 16, 17 disposed between each of the well layers. The second well layer 15 comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer 14, and the nitride semiconductor light emitting element 1 has peaks in the emission spectrum respectively corresponding to the first well layer 14 and the second well layer 15.
摘要翻译：提供一种氮化物半导体发光元件，其能够产生具有两个具有稳定的发光峰强度比的峰的发射光谱。氮化物半导体发光体1包括设置在n型氮化物半导体层11和p型氮化物半导体层13之间的有源层12.有源层12包括第一阱层14，插入第一阱的第二阱层15 层14并且设置在阱层中的最外侧，以及设置在每个阱层之间的阻挡层16,17。第二阱层15包括具有比构成第一阱层14的氮化物半导体的带隙能量更大的带隙能量的氮化物半导体，并且氮化物半导体发光元件1分别对应于第一阱层14的发射光谱具有峰值。阱层14和第二阱层15。

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