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1. 发明授权

US09773972B1 Magnetic device 有权
公开(公告)号：US09773972B1
公开(公告)日：2017-09-26
申请号：US15420091
申请日：2017-01-30
申请人： Ki-woong Kim , Kee-won Kim , Se-chung Oh , Yong-sung Park , Ju-hyun Kim
发明人： Ki-woong Kim , Kee-won Kim , Se-chung Oh , Yong-sung Park , Ju-hyun Kim
IPC分类号： H01L29/82 , H01L43/10 , H01L43/02 , H01L27/22 , H01L43/12
CPC分类号： H01L43/10 , H01L27/228 , H01L43/08
摘要： A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.

2. 发明授权

US10128433B2 Magnetic memory device 有权
公开(公告)号：US10128433B2
公开(公告)日：2018-11-13
申请号：US15332460
申请日：2016-10-24
申请人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
发明人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
IPC分类号： H01L43/06 , H01L43/04 , H01L43/08 , H01L43/10 , H01L27/22 , G11C11/18
摘要： Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

3. 发明授权

US08218362B2 Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same 有权
标题翻译：磁性随机存取存储器件，驱动方法和数据写入和读取方法相同
公开(公告)号：US08218362B2
公开(公告)日：2012-07-10
申请号：US12385124
申请日：2009-03-31
申请人： In-jun Hwang , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
发明人： In-jun Hwang , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
IPC分类号： G11C11/14 , G11C11/416 , G11C29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.
摘要翻译：磁存储器件包括下结构或反铁磁层，钉扎层，信息存储层和形成在下结构或反铁磁层上的自由层。在操作磁存储器件的方法中，在将自由层的磁化设定为第一磁化方向之后，来自存储信息层的信息被读取或存储。当第一磁化方向与被钉扎层的磁化方向相反时，存储信息，但是当第一磁化方向与被钉扎层的磁化方向相同时被读取。

4. 发明申请

US20100008130A1 Method of operating magnetic random access memory device 有权
标题翻译：操作磁性随机存取存储器件的方法
公开(公告)号：US20100008130A1
公开(公告)日：2010-01-14
申请号：US12458411
申请日：2009-07-10
申请人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
发明人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
IPC分类号： G11C11/00 , G11C7/00 , G11C11/14
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
摘要翻译：提供了一种操作包括开关结构和磁阻结构的磁性随机存取存储器件的方法。根据该方法，当向磁阻结构写入数据时，通过控制开关结构的栅极电压可以减小依赖于电流方向的电流变化。

5. 发明授权

US07554774B2 Magnetic resistance device and method of manufacturing the same 有权
标题翻译：磁阻装置及其制造方法
公开(公告)号：US07554774B2
公开(公告)日：2009-06-30
申请号：US11045106
申请日：2005-01-31
申请人： Tae-wan Kim , Kee-won Kim , Soon-ju Kwon , Sang-jin Park
发明人： Tae-wan Kim , Kee-won Kim , Soon-ju Kwon , Sang-jin Park
IPC分类号： G11B5/39
CPC分类号： H01L43/10 , B82Y25/00 , H01F10/3254 , H01F10/3268
摘要： In a magnetic resistance device, and a method of manufacturing the same, the magnetic resistance device includes a pinning layer, a pinned layer, a nonmagnetic layer, and a free layer stacked on one another, at least one of the pinned layer and the free layer being formed of an intermetallic compound.
摘要翻译：在磁阻器件及其制造方法中，磁阻器件包括钉扎层，钉扎层，非磁性层和彼此堆叠的自由层，所述钉扎层和自由层中的至少一个层由金属间化合物形成。

6. 发明申请

US20080013369A1 Magnetic tunneling junction based logic circuits an methods of operating the same 有权
标题翻译：基于磁隧道结的逻辑电路的操作方法
公开(公告)号：US20080013369A1
公开(公告)日：2008-01-17
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H03K19/18 , H03K19/21
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译：描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

7. 发明申请

US20070195588A1 Magnetic memory devices using magnetic domain motion 有权
标题翻译：使用磁畴运动的磁存储器件
公开(公告)号：US20070195588A1
公开(公告)日：2007-08-23
申请号：US11707002
申请日：2007-02-16
申请人： Tae-wan Kim , Kee-won Kim , Young-Jin Cho , In-Jun Hwang
发明人： Tae-wan Kim , Kee-won Kim , Young-Jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808 , G11C19/0841 , G11C2213/77
摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.
摘要翻译：磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。磁畴对应于参考层的有效尺寸。第一输入部分输入写入信号和读取信号中的至少一个。第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

8. 发明申请

US20070195587A1 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US20070195587A1
公开(公告)日：2007-08-23
申请号：US11706988
申请日：2007-02-16
申请人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
发明人： Tae-wan Kim , Young-jin Cho , Kee-won Kim , In-jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , G11C19/0808 , G11C19/0841
摘要： A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.
摘要翻译：提供磁存储器件。磁存储器件可以包括其中形成多个磁畴的存储器轨道，使得其中每一个可以是磁畴的数据位被存储在阵列中。存储器轨道可以由非晶软磁材料形成。

9. 发明申请

US20050168882A1 Magnetic resistance device and method of manufacturing the same 有权
标题翻译：磁阻装置及其制造方法
公开(公告)号：US20050168882A1
公开(公告)日：2005-08-04
申请号：US11045106
申请日：2005-01-31
申请人： Tae-wan Kim , Kee-won Kim , Soon-ju Kwon , Sang-jin Park
发明人： Tae-wan Kim , Kee-won Kim , Soon-ju Kwon , Sang-jin Park
IPC分类号： G11B5/39 , H01F10/16 , H01F10/18 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , H01F10/3254 , H01F10/3268
摘要： In a magnetic resistance device, and a method of manufacturing the same, the magnetic resistance device includes a pinning layer, a pinned layer, a nonmagnetic layer, and a free layer stacked on one another, at least one of the pinned layer and the free layer being formed of an intermetallic compound.
摘要翻译：在磁阻器件及其制造方法中，磁阻器件包括钉扎层，钉扎层，非磁性层和彼此堆叠的自由层，所述钉扎层和自由层中的至少一个层由金属间化合物形成。

10. 发明授权

US08848432B2 Magnetoresistive elements and memory devices including the same 有权
标题翻译：磁阻元件和包括其的存储器件
公开(公告)号：US08848432B2
公开(公告)日：2014-09-30
申请号：US13591809
申请日：2012-08-22
申请人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
发明人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
IPC分类号： G11C11/16 , G11C11/15 , H01L43/08
CPC分类号： G11C11/161 , G11C11/15 , H01L43/08 , Y10T428/1121
摘要： Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
摘要翻译：磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。

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