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1. 发明申请

US20120305069A1 PHOTOELECTRODE INCLUDING ZINC OXIDE HEMISPHERE, METHOD OF FABRICATING THE SAME AND DYE-SENSITIZED SOLAR CELL USING THE SAME 有权
标题翻译：包含氧化锌催化剂的光电子，其制造方法和使用其的透明的太阳能电池
公开(公告)号：US20120305069A1
公开(公告)日：2012-12-06
申请号：US13484695
申请日：2012-05-31
申请人： Ki Seok Kim , Sang Hoon Nam , Hui Su Jeong , Hui Song , Sang-Mook Kim , Won Bae Kim , Gun-Young Jung
发明人： Ki Seok Kim , Sang Hoon Nam , Hui Su Jeong , Hui Song , Sang-Mook Kim , Won Bae Kim , Gun-Young Jung
IPC分类号： H01L31/0224 , H01L31/0264 , B82Y99/00
CPC分类号： B82Y30/00 , B82Y20/00 , B82Y40/00 , H01G9/2036 , H01G9/2059 , Y02E10/542
摘要： Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.
摘要翻译：提供了包括氧化锌半球的光电极，其制造方法和使用其的染料敏化太阳能电池。光电极包括导电基板，设置在导电基板上的氧化锌半球，以及覆盖氧化锌半球的多孔金属氧化物层。可以增加光电极的光散射效应，并且可以最小化电子的复合损耗以改善光伏特性。

2. 发明授权

US09452929B2 Photoelectrode including zinc oxide hemisphere, method of fabricating the same and dye-sensitized solar cell using the same 有权
标题翻译：包括氧化锌半球的光电极，其制造方法和使用其的染料敏化太阳能电池
公开(公告)号：US09452929B2
公开(公告)日：2016-09-27
申请号：US13484695
申请日：2012-05-31
申请人： Ki Seok Kim , Sang Hoon Nam , Hui Su Jeong , Hui Song , Sang-Mook Kim , Won Bae Kim , Gun Young Jung
发明人： Ki Seok Kim , Sang Hoon Nam , Hui Su Jeong , Hui Song , Sang-Mook Kim , Won Bae Kim , Gun Young Jung
IPC分类号： H01L31/0224 , B82Y30/00 , B82Y40/00 , H01G9/20 , B82Y20/00
CPC分类号： B82Y30/00 , B82Y20/00 , B82Y40/00 , H01G9/2036 , H01G9/2059 , Y02E10/542
摘要： Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.
摘要翻译：提供了包括氧化锌半球的光电极，其制造方法和使用其的染料敏化太阳能电池。光电极包括导电基板，设置在导电基板上的氧化锌半球，以及覆盖氧化锌半球的多孔金属氧化物层。可以增加光电极的光散射效应，并且可以最小化电子的复合损耗以改善光伏特性。

3. 发明申请

US20110260191A1 LIGHT-EMITTING DIODE HAVING ZINC OXIDE NANORODS AND METHOD OF FABRICATING THE SAME 失效
标题翻译：具有氧化锌纳米粒子的发光二极管及其制造方法
公开(公告)号：US20110260191A1
公开(公告)日：2011-10-27
申请号：US13094338
申请日：2011-04-26
申请人： Ki-Seok Kim , Gun-Young Jung , Sang-Mook Kim , Mun-Seok Jeong , Hyun Jeong
发明人： Ki-Seok Kim , Gun-Young Jung , Sang-Mook Kim , Mun-Seok Jeong , Hyun Jeong
IPC分类号： H01L33/60 , H01L33/58 , B82Y99/00
CPC分类号： B82Y40/00 , B82Y30/00 , H01L33/14 , H01L33/22
摘要： The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).
摘要翻译：典型的发光二极管（LED）的光提取效率通过掺入一维ZnO纳米棒得到改善。与没有纳米棒的LED相比，由于ZnO亚微米的波导效应，光提取效率提高了约31％。使用简单的非催化湿化学生长法在不含种子层的铟锡氧化物（ITO）顶部接触层上，在低温下制备其他形状的ZnO微晶棒和纳米棒。通过控制pH值和生长时间，可以容易地改变针状或平顶六边形结构的晶体形态以及ZnO微结构和纳米棒的密度和尺寸。使用共聚焦扫描电致发光显微镜（CSEM）和微电致发光光谱（MES）观察每个ZnO棒中的波导现象。

4. 发明授权

US08614452B2 Light-emitting diode having zinc oxide nanorods and method of fabricating the same 失效
标题翻译：具有氧化锌纳米棒的发光二极管及其制造方法
公开(公告)号：US08614452B2
公开(公告)日：2013-12-24
申请号：US13094338
申请日：2011-04-26
申请人： Ki-Seok Kim , Gun-Young Jung , Sang-Mook Kim , Mun-Seok Jeong , Hyun Jeong
发明人： Ki-Seok Kim , Gun-Young Jung , Sang-Mook Kim , Mun-Seok Jeong , Hyun Jeong
IPC分类号： H01L33/00
CPC分类号： B82Y40/00 , B82Y30/00 , H01L33/14 , H01L33/22
摘要： The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).
摘要翻译：典型的发光二极管（LED）的光提取效率通过掺入一维ZnO纳米棒得到改善。与没有纳米棒的LED相比，由于ZnO亚微米的波导效应，光提取效率提高了约31％。使用简单的非催化湿化学生长法在不含种子层的铟锡氧化物（ITO）顶部接触层上，在低温下制备其他形状的ZnO微晶棒和纳米棒。通过控制pH值和生长时间，可以容易地改变针状或平顶六边形结构的晶体形态以及ZnO微结构和纳米棒的密度和尺寸。使用共焦扫描电致发光显微镜（CSEM）和微电致发光光谱（MES）观察每个ZnO棒中的波导现象。

5. 发明申请

US20100295087A1 Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US20100295087A1
公开(公告)日：2010-11-25
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/02 , H01L33/42 , H01L33/62
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

6. 发明申请

US20130134462A1 Light emitting diode having multi-cell structure and method of manufacturing the same 有权
标题翻译：具有多单元结构的发光二极管及其制造方法
公开(公告)号：US20130134462A1
公开(公告)日：2013-05-30
申请号：US13504522
申请日：2010-11-02
申请人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
发明人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
IPC分类号： H01L33/60 , H01L33/36
CPC分类号： H01L33/60 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2933/0016
摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.
摘要翻译：公开了具有包括多个单电池的多单元结构的发光二极管。发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率。即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

7. 发明申请

US20120086040A1 LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME 审中-公开
标题翻译：具有波长转换材料层的发光二极管及其制造方法
公开(公告)号：US20120086040A1
公开(公告)日：2012-04-12
申请号：US13376714
申请日：2010-06-10
申请人： Kwang-Cheol Lee , Jae-Pil Kim , Sang-Bin Song , Sang-Mook Kim
发明人： Kwang-Cheol Lee , Jae-Pil Kim , Sang-Bin Song , Sang-Mook Kim
IPC分类号： H01L33/50
CPC分类号： H01L33/507 , H01L33/501 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.
摘要翻译：提供一种具有波长转换材料的发光二极管及其制造方法。发光二极管包括：基座结构; 布置在基底结构上的发光二极管芯片; 以及布置在发光二极管芯片上的波长转换材料层，使得与发光二极管芯片的上表面相邻的区域比与发光二极管芯片的侧表面相邻的区域更厚。此外，制造发光二极管的方法包括：将发光二极管芯片布置在基底结构上的步骤; 以及在发光二极管芯片上布置含有透光性光固化性材料的波长转换材料层的步骤，使得其与发光二极管芯片的上表面相邻的面积比邻近发光二极管芯片的面积厚发光二极管芯片的侧面。

8. 发明申请

US20140138613A1 LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES 有权
标题翻译：具有异质结构的发光二极管
公开(公告)号：US20140138613A1
公开(公告)日：2014-05-22
申请号：US13679698
申请日：2012-11-16
申请人： Sang-Mook Kim , Jong-Hyeob Baek
发明人： Sang-Mook Kim , Jong-Hyeob Baek
IPC分类号： H01L33/22 , H01L33/00
CPC分类号： H01L33/22 , H01L33/005 , H01L33/24
摘要： An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.
摘要翻译：本发明的目的是提供一种具有不均匀材料结构的发光二极管及其制造方法，其中通过在之前或之后形成由彼此不同的异质材料构成的凹陷和突出物来改善向外部提取光的效率，在衬底上形成半导体材料的中间，以提高光提取效率。

9. 发明授权

US08710520B2 Light emitting diode having multi-cell structure and method of manufacturing the same 有权
标题翻译：具有多单元结构的发光二极管及其制造方法
公开(公告)号：US08710520B2
公开(公告)日：2014-04-29
申请号：US13504522
申请日：2010-11-02
申请人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
发明人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
IPC分类号： H01L33/36
CPC分类号： H01L33/60 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2933/0016
摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.
摘要翻译：公开了具有包括多个单电池的多单元结构的发光二极管。发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率。即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

10. 发明授权

US08294167B2 Light emitting diode with high electrostatic discharge and fabrication method thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US08294167B2
公开(公告)日：2012-10-23
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/00
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

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