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1. 发明授权

US08084845B2 Subresolution silicon features and methods for forming the same 有权
标题翻译：分解硅特征及其形成方法
公开(公告)号：US08084845B2
公开(公告)日：2011-12-27
申请号：US12713125
申请日：2010-02-25
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L29/06
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

2. 发明申请

US20100148234A1 SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME 有权
标题翻译： SUBRASOLUTION SILICON特征及其形成方法
公开(公告)号：US20100148234A1
公开(公告)日：2010-06-17
申请号：US12713125
申请日：2010-02-25
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L27/06 , H01L29/78
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

3. 发明授权

US08981444B2 Subresolution silicon features and methods for forming the same 有权
标题翻译：分解硅特征及其形成方法
公开(公告)号：US08981444B2
公开(公告)日：2015-03-17
申请号：US13302090
申请日：2011-11-22
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L27/06 , H01L29/78 , H01L29/66 , H01L27/108
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

4. 发明授权

US07678648B2 Subresolution silicon features and methods for forming the same 有权
标题翻译：分解硅特征及其形成方法
公开(公告)号：US07678648B2
公开(公告)日：2010-03-16
申请号：US11486800
申请日：2006-07-14
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

5. 发明申请

US20080014699A1 Subresolution silicon features and methods for forming the same 有权
标题翻译：分解硅特征及其形成方法
公开(公告)号：US20080014699A1
公开(公告)日：2008-01-17
申请号：US11486800
申请日：2006-07-14
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L21/336
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

6. 发明申请

US20120061740A1 SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME 有权
标题翻译： SUBRASOLUTION SILICON特征及其形成方法
公开(公告)号：US20120061740A1
公开(公告)日：2012-03-15
申请号：US13302090
申请日：2011-11-22
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L27/06 , H01L29/78
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

7. 发明授权

US08652926B1 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08652926B1
公开(公告)日：2014-02-18
申请号：US13559073
申请日：2012-07-26
申请人： Gurpreet Lugani , Kevin J. Torek
发明人： Gurpreet Lugani , Kevin J. Torek
IPC分类号： H01L21/20 , H01L21/8242 , H01L21/302 , H01L21/461
CPC分类号： H01L27/10852 , H01G4/005 , H01G4/008 , H01G4/06 , H01L21/3065 , H01L21/31116 , H01L21/32137 , H01L27/10894 , H01L28/40 , H01L28/60 , H01L28/75 , H01L28/91
摘要： A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.
摘要翻译：形成电容器的方法包括在支撑材料内提供第一电容器电极。第一电容器电极含有TiN，载体材料含有多晶硅。使用含硫和含氟蚀刻化学法，相对于含TiN的第一电容器电极，选择性地对含多晶硅的支撑材料进行干式各向异性蚀刻。在第一电容器电极的侧壁上形成电容器电介质，并且在电容器电介质上形成第二电容器电极。公开了另外的方法。

8. 发明授权

US06783695B1 Acid blend for removing etch residue 失效
标题翻译：用于去除蚀刻残留物的酸性共混物
公开(公告)号：US06783695B1
公开(公告)日：2004-08-31
申请号：US09643946
申请日：2000-08-23
申请人： Kevin J. Torek , Donald L. Yates
发明人： Kevin J. Torek , Donald L. Yates
IPC分类号： C09K1300
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/426 , H01L21/02063
摘要： A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of a fluorine source, a non-aqueous solvent, a complementary acid, and a surface passivation agent. The fluorine source is typically hydrofluoric acid. The non-aqueous solvent is typically a polyhydric alcohol such as propylene glycol. The complementary acid is typically either phosphoric acid or hydrochloric acid. The surface passivation agent is typically a carboxylic acid such as citric acid. Exposing the substrate to the conditioning solution removes the remaining dry etch residues while minimizing removal of material from desired substrate features.
摘要翻译：从半导体衬底干法蚀刻工艺后残留的有机金属和有机硅酸盐残渣的方法。将基材暴露于氟源，非水溶剂，互补酸和表面钝化剂的调理溶液中。氟源通常是氢氟酸。非水溶剂通常是多元醇如丙二醇。互补酸通常是磷酸或盐酸。表面钝化剂通常是羧酸如柠檬酸。将基材暴露于调理溶液中，除去剩余的干蚀刻残留物，同时最小化从所需基材特征中去除材料。

9. 发明授权

US06645874B1 Delivery of dissolved ozone 失效
标题翻译：交付溶解臭氧
公开(公告)号：US06645874B1
公开(公告)日：2003-11-11
申请号：US09864482
申请日：2001-05-24
申请人： Kevin J. Torek , Jonathan C. Morgan , Paul A. Morgan
发明人： Kevin J. Torek , Jonathan C. Morgan , Paul A. Morgan
IPC分类号： H01L21302
CPC分类号： H01L21/6708 , B08B3/08 , B08B2203/005 , G03F7/427 , H01L21/31133 , H01L21/67051
摘要： An apparatus and method for delivering ozone to a workpiece. In one embodiment, fluid is sprayed onto a workpiece placed in an ozone-rich environment. Alternatively, ozone is mixed with the fluid prior to spraying the fluid onto the workpiece. When spraying the fluid, the invention pulses the fluid at desired rates to create a substantially uniform layer of ozone-rich fluid on the workpiece. In another embodiment, the workpiece is also slowly rotated during at least a portion of the time the layer of ozone-rich fluid is applied to the workpiece.
摘要翻译：一种用于将臭氧输送到工件的装置和方法。在一个实施例中，将流体喷射到位于富臭氧环境中的工件上。或者，在将流体喷射到工件之前，将臭氧与流体混合。当喷射流体时，本发明以所需的速率脉冲流体，以在工件上产生基本均匀的富含臭氧的流体层。在另一个实施例中，工件在至少一部分时间内缓慢地旋转，使得富含臭氧的流体层被施加到工件上。

10. 发明授权

US06599683B1 Photoresist developer with reduced resist toppling and method of using same 有权
标题翻译：具有降低抗蚀剂倾倒的光致抗蚀剂显影剂及其使用方法
公开(公告)号：US06599683B1
公开(公告)日：2003-07-29
申请号：US10074640
申请日：2002-02-13
申请人： Kevin J. Torek , Yoshiki Hishiro
发明人： Kevin J. Torek , Yoshiki Hishiro
IPC分类号： G03F732
CPC分类号： G03F7/327 , G03F7/322
摘要： A developer solution used in the development process of a photoresist is provided. The developer solution reduces or eliminates toppling that occurs during development of the photoresist. The solution contains a polyhydric alcohol, a base compound, and a surfactant. A method for developing a photoresist using the solution is provided.
摘要翻译：提供了用于光致抗蚀剂的显影过程中的显影剂溶液。显影剂溶液减少或消除在光致抗蚀剂显影过程中发生的倒角。该溶液含有多元醇，碱性化合物和表面活性剂。提供了使用该溶液显影光致抗蚀剂的方法。

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