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1. 发明授权

US06323133B1 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor 失效
标题翻译：用于控制处理反应器中的气体分配板的温度的方法和装置
公开(公告)号：US06323133B1
公开(公告)日：2001-11-27
申请号：US09514820
申请日：2000-02-28
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： H01L2100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45508 , C23C16/4558 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01L21/67109
摘要： A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.
摘要翻译：公开了一种等离子体处理反应器，其允许在改变用于增强半导体加工和反应器清洁的功能温度范围方面的更大控制。通过将来自单个气体歧管的工艺气体流分解为将气体分配板后面的工艺气体喷射到两个流中来控制温度，其中第一流在气体分配板后面并且第二流直接注入到腔室中。通过减少在气体分配板后面注入的流量分数，可以增加气体分配板的温度。气体分配板的温度升高导致来自气体分配板的沉积材料的较高的O 2等离子体去除速率。此外，更高的等离子体温度有助于在固定温度反应器中不可能在高温下操作的其它过程。

2. 发明授权

US06277759B1 Plasma etching methods 有权
标题翻译：等离子体蚀刻方法
公开(公告)号：US06277759B1
公开(公告)日：2001-08-21
申请号：US09141775
申请日：1998-08-27
申请人： Guy T. Blalock , David S. Becker , Kevin G. Donohoe
发明人： Guy T. Blalock , David S. Becker , Kevin G. Donohoe
IPC分类号： H01L213065
CPC分类号： H01J37/32862 , H01L21/31116
摘要： A plasma etching method includes forming a polymer comprising carbon and a halogen over at least some internal surfaces of a plasma etch chamber. After forming the polymer, plasma etching is conducted using a gas which is effective to etch polymer from chamber internal surfaces. In one implementation, the gas has a hydrogen component effective to form a gaseous hydrogen halide from halogen liberated from the polymer. In one implementation, the gas comprises a carbon component effective to getter the halogen from the etched polymer. In another implementation, a plasma etching method includes positioning a semiconductor wafer on a wafer receiver within a plasma etch chamber. First plasma etching of material on the semiconductor wafer occurs with a gas comprising carbon and a halogen. A polymer comprising carbon and the halogen forms over at least some internal surfaces of the plasma etch chamber during the first plasma etching. After the first plasma etching and with the wafer on the wafer receiver, second plasma etching is conducted using a gas effective to etch polymer from chamber internal surfaces and getter halogen liberated from the polymer to restrict further etching of the material on the semiconductor wafer during the second plasma etching. The first and second plasma etchings are ideally conducted at subatmospheric pressure with the wafer remaining in situ on the receiver intermediate the first and second etchings, and with the chamber maintained at some subatmospheric pressure at all time intermediate the first and second plasma etchings.
摘要翻译：等离子体蚀刻方法包括在等离子体蚀刻室的至少一些内表面上形成包含碳和卤素的聚合物。在形成聚合物之后，使用有效地从室内表面蚀刻聚合物的气体进行等离子体蚀刻。在一个实施方案中，气体具有有效地从从聚合物释放的卤素形成气态卤化氢的氢组分。在一个实施方案中，气体包括有效地从蚀刻的聚合物中吸收卤素的碳组分。在另一个实施方案中，等离子体蚀刻方法包括将半导体晶片定位在等离子体蚀刻室内的晶片接收器上。半导体晶片上的材料的等离子体蚀刻首先用包含碳和卤素的气体进行。在第一等离子体蚀刻期间，包含碳和卤素的聚合物在等离子体蚀刻室的至少一些内表面上形成。在第一等离子体蚀刻和晶片接收器上的晶片之后，使用有效地从腔室内表面蚀刻聚合物的气体和从聚合物释放的吸气剂卤素来进行第二等离子体蚀刻，以限制在半导体晶片期间进一步蚀刻半导体晶片上的材料第二等离子体蚀刻。第一和第二等离子体蚀刻理想地在低于大气压的压力下进行，晶片在接收器上原位保留在第一和第二蚀刻物的中间，并且室在所有时间保持在一些低于大气压的压力下，介于第一和第二等离子体蚀刻之间。

3. 发明授权

US6114252A Plasma processing tools, dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers 有权
标题翻译：等离子体处理工具，双源等离子体蚀刻器，双源等离子体蚀刻方法和形成平面线圈双源等离子体蚀刻器的方法
公开(公告)号：US6114252A
公开(公告)日：2000-09-05
申请号：US435237
申请日：1999-11-05
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： B01J19/08 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32477 , H01J37/321
摘要： Plasma processing tools, dual-source plasma etchers, and etching methods are described. In one embodiment, a processing chamber is provided having an interior base and an interior sidewall joined with the base. A generally planar inductive source is mounted proximate the chamber. A dielectric liner is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.
摘要翻译：描述了等离子体处理工具，双源等离子体蚀刻器和蚀刻方法。在一个实施例中，提供处理室，其具有与基部连接的内部基部和内部侧壁。大致平面的感应源安装在腔室附近。电介质衬垫设置在腔室内部的内侧壁上，衬垫被接纳在小于内侧壁的整体上。在优选实施例中，内侧壁具有可磨削部分，并且电介质衬垫具有定位成暴露可磨削内侧壁部分的通道。随后，在室内展开的等离子体沿着延伸到暴露的内侧壁的接地路径设置。在另一个优选实施例中，电介质衬垫可移除地安装在处理室内。

4. 发明授权

US06617256B2 Method for controlling the temperature of a gas distribution plate in a process reactor 失效
标题翻译：控制工艺反应器中气体分布板温度的方法
公开(公告)号：US06617256B2
公开(公告)日：2003-09-09
申请号：US10127273
申请日：2002-04-22
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： H01L2100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45508 , C23C16/4558 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01L21/67109
摘要： A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.
摘要翻译：公开了一种等离子体处理反应器，其允许在改变用于增强半导体加工和反应器清洁的功能温度范围方面的更大控制。通过将来自单个气体歧管的工艺气体流分解为将气体分配板后面的工艺气体喷射到两个流中来控制温度，其中第一流在气体分配板后面并且第二流直接注入到腔室中。通过减少在气体分配板后面注入的流量分数，可以增加气体分配板的温度。气体分配板的温度升高导致来自气体分配板的沉积材料的较高的O 2等离子体去除速率。此外，更高的等离子体温度有助于在固定温度反应器中不可能在高温下操作的其它过程。

5. 发明授权

US06387816B2 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor 失效
标题翻译：用于控制处理反应器中的气体分配板的温度的方法和装置
公开(公告)号：US06387816B2
公开(公告)日：2002-05-14
申请号：US09944503
申请日：2001-08-30
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： H01L2100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45508 , C23C16/4558 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01L21/67109
摘要： A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.
摘要翻译：公开了一种等离子体处理反应器，其允许在改变用于增强半导体加工和反应器清洁的功能温度范围方面的更大控制。通过将来自单个气体歧管的工艺气体流分解为将气体分配板后面的工艺气体喷射到两个流中来控制温度，其中第一流在气体分配板后面并且第二流直接注入到腔室中。通过减少在气体分配板后面注入的流量分数，可以增加气体分配板的温度。气体分配板的温度升高导致来自气体分配板的沉积材料的较高的O 2等离子体去除速率。此外，更高的等离子体温度有助于在固定温度反应器中不可能在高温下操作的其它过程。

6. 发明授权

US06184146B2 Plasma producing tools, dual-source plasma etchers, dual-source plasma etching methods, and method of forming planar coil dual-source plasma etchers 有权
标题翻译：等离子体处理工具，双源等离子体蚀刻器，双源等离子体蚀刻方法和形成平面线圈双源等离子体蚀刻器的方法
公开(公告)号：US06184146B2
公开(公告)日：2001-02-06
申请号：US09598589
申请日：2000-06-20
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： H01L2100
CPC分类号： H01J37/32477 , H01J37/321
摘要： Plasma processing tools, dual-source plasma etchers, and etching methods are described. In one embodiment, a processing chamber is provided having an interior base and an interior sidewall joined with the base. A generally planar inductive source is mounted proximate the chamber. A dielectric liner is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.
摘要翻译：描述了等离子体处理工具，双源等离子体蚀刻器和蚀刻方法。在一个实施例中，提供处理室，其具有与基部连接的内部基部和内部侧壁。大致平面的感应源安装在腔室附近。电介质衬垫设置在腔室内部的内侧壁上，衬垫被接纳在小于内侧壁的整体上。在优选实施例中，内侧壁具有可磨削部分，并且电介质衬垫具有定位成暴露可磨削内侧壁部分的通道。随后，在室内展开的等离子体沿着延伸到暴露的内侧壁的接地路径设置。在另一个优选实施例中，电介质衬垫可移除地安装在处理室内。

7. 发明授权

US07183220B1 Plasma etching methods 有权
标题翻译：等离子体蚀刻方法
公开(公告)号：US07183220B1
公开(公告)日：2007-02-27
申请号：US09677478
申请日：2000-10-02
申请人： Guy T. Blalock , David S. Becker , Kevin G. Donohoe
发明人： Guy T. Blalock , David S. Becker , Kevin G. Donohoe
IPC分类号： H01L21/302
CPC分类号： H01J37/32862 , H01L21/31116
摘要： A plasma etching method includes forming a polymer comprising carbon and a halogen over at least some internal surfaces of a plasma etch chamber. After forming the polymer, plasma etching is conducted using a gas which is effective to etch polymer from chamber internal surfaces. In one implementation, the gas has a hydrogen component effective to form a gaseous hydrogen halide from halogen liberated from the polymer. In one implementation, the gas comprises a carbon component effective to getter the halogen from the etched polymer. In another implementation, a plasma etching method includes positioning a semiconductor wafer on a wafer receiver within a plasma etch chamber. First plasma etching of material on the semiconductor wafer occurs with a gas comprising carbon and a halogen. A polymer comprising carbon and the halogen forms over at least some internal surfaces of the plasma etch chamber during the first plasma etching. After the first plasma etching and with the wafer on the wafer receiver, second plasma etching is conducted using a gas effective to etch polymer from chamber internal surfaces and getter halogen liberated from the polymer to restrict further etching of the material on the semiconductor wafer during the second plasma etching. The first and second plasma etchings are ideally conducted at subatmospheric pressure with the wafer remaining in situ on the receiver intermediate the first and second etchings, and with the chamber maintained at some subatmospheric pressure at all time intermediate the first and second plasma etchings.
摘要翻译：等离子体蚀刻方法包括在等离子体蚀刻室的至少一些内表面上形成包含碳和卤素的聚合物。在形成聚合物之后，使用有效地从室内表面蚀刻聚合物的气体进行等离子体蚀刻。在一个实施方案中，气体具有有效地从从聚合物释放的卤素形成气态卤化氢的氢组分。在一个实施方案中，气体包括有效地从蚀刻的聚合物中吸收卤素的碳组分。在另一个实施方案中，等离子体蚀刻方法包括将半导体晶片定位在等离子体蚀刻室内的晶片接收器上。半导体晶片上的材料的等离子体蚀刻首先用包含碳和卤素的气体进行。在第一等离子体蚀刻期间，包含碳和卤素的聚合物在等离子体蚀刻室的至少一些内表面上形成。在第一等离子体蚀刻和晶片接收器上的晶片之后，使用有效地从腔室内表面蚀刻聚合物的气体和从聚合物释放的吸气剂卤素来进行第二等离子体蚀刻，以限制在半导体晶片期间进一步蚀刻半导体晶片上的材料第二等离子体蚀刻。第一和第二等离子体蚀刻理想地在低于大气压的压力下进行，晶片在接收器上原位保留在第一和第二蚀刻物的中间，并且室在所有时间保持在一些低于大气压的压力下，介于第一和第二等离子体蚀刻之间。

8. 发明授权

US06516742B1 Apparatus for improved low pressure inductively coupled high density plasma reactor 失效
标题翻译：用于改进的低压感应耦合高密度等离子体反应器的装置
公开(公告)号：US06516742B1
公开(公告)日：2003-02-11
申请号：US09031400
申请日：1998-02-26
申请人： Guy T. Blalock , Kevin G. Donohoe
发明人： Guy T. Blalock , Kevin G. Donohoe
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/32183 , H05H1/46
摘要： A plasma reactor comprises an electromagnetic energy source coupled to a radiator through first and second variable impedance networks. The plasma reactor includes a chamber having a dielectric window that is proximate to the radiator. A shield is positioned between the radiator and the dielectric window. The shield substantially covers a surface of the radiator near the dielectric window. A portion of the radiator that is not covered by the shield is proximate to a conductive wall of the chamber. Plasma reactor operation includes the following steps. A plasma is ignited in a chamber with substantially capacitive electric energy coupled from the radiator. A variable impedance network is tuned so that the capacitive electric energy coupled into the chamber is diminished. The plasma is then powered with substantially magnetic energy.
摘要翻译：等离子体反应器包括通过第一和第二可变阻抗网络耦合到散热器的电磁能量源。等离子体反应器包括具有靠近散热器的电介质窗口的室。屏蔽件位于散热器和电介质窗口之间。屏蔽件基本上覆盖在电介质窗口附近的散热器的表面。辐射体未被屏蔽物覆盖的部分靠近腔室的导电壁。等离子体反应器操作包括以下步骤。等离子体在具有从散热器耦合的基本上电容的电能的室中点燃。调整可变阻抗网络，使得耦合到腔室中的电容性电能减弱。然后等离子体用大体上的磁能驱动。

9. 发明授权

US06383334B1 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor 失效
公开(公告)号：US06383334B1
公开(公告)日：2002-05-07
申请号：US09924628
申请日：2001-08-08
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45508 , C23C16/4558 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32522 , H01L21/67109
摘要： A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber.

10. 发明授权

US6136720A Plasma processing tools dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers 有权
标题翻译：等离子体处理工具的双源等离子体蚀刻器，双源等离子体蚀刻方法，以及形成平面线圈双源等离子体蚀刻器的方法
公开(公告)号：US6136720A
公开(公告)日：2000-10-24
申请号：US515362
申请日：2000-02-29
申请人： Kevin G. Donohoe , Guy T. Blalock
发明人： Kevin G. Donohoe , Guy T. Blalock
IPC分类号： B01J19/08 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32477 , H01J37/321
摘要： Plasma processing tools, dual-source plasma etchers, and etching methods are described. In one embodiment, a processing chamber is provided having an interior base and an interior sidewall joined with the base. A generally planar inductive source is mounted proximate the chamber. A dielectric liner is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.
摘要翻译：描述了等离子体处理工具，双源等离子体蚀刻器和蚀刻方法。在一个实施例中，提供处理室，其具有与基部连接的内部基部和内部侧壁。大致平面的感应源安装在腔室附近。电介质衬垫设置在腔室内部的内侧壁上，衬垫被接纳在小于内侧壁的整体上。在优选实施例中，内侧壁具有可磨削部分，并且电介质衬垫具有定位成暴露可磨削内侧壁部分的通道。随后，在室内展开的等离子体沿着延伸到暴露的内侧壁的接地路径设置。在另一个优选实施例中，电介质衬垫可移除地安装在处理室内。

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