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1. 发明申请

US20070045655A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070045655A1
公开(公告)日：2007-03-01
申请号：US11508145
申请日：2006-08-23
申请人： Keun Song , Dong Lee , Sun Kim , Je Kim
发明人： Keun Song , Dong Lee , Sun Kim , Je Kim
IPC分类号： H01L29/00
CPC分类号： H01L33/32 , H01L33/04 , H01L33/14 , H01S5/305 , H01S5/3215 , H01S5/3216 , H01S5/32341
摘要： The invention relates to a high-output, high-efficiency nitride semiconductor light emitting device with low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-contact layer formed on a substrate and a current spreading layer formed on the n-contact layer. The nitride semiconductor light emitting device also includes an active layer formed on the current spreading layer and a p-clad layer formed on the active layer. The current spreading layer comprises at least three multiple layers composed of at least one first nitride semiconductor layer made of InxGa(1−x)N, where 0
摘要翻译：本发明涉及一种具有低工作电压和高静电放电性的高输出，高效氮化物半导体发光器件。氮化物半导体发光器件包括形成在衬底上的n接触层和形成在n接触层上的电流扩散层。氮化物半导体发光器件还包括形成在电流扩散层上的有源层和形成在有源层上的p覆盖层。电流扩展层包括由至少一个由In x Ga（1-x）N制成的至少一个第一氮化物半导体层组成的至少三个多层，其中0

2. 发明申请

US20070096143A1 Nitride semiconductor light emitting device and method for manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20070096143A1
公开(公告)日：2007-05-03
申请号：US11517337
申请日：2006-09-08
申请人： Sun Kim , Je Kim , Pil Kang , Keun Song
发明人： Sun Kim , Je Kim , Pil Kang , Keun Song
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/42 , H01L33/32
摘要： The invention relates to a nitride semiconductor light emitting device having a high light emission efficiency, low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer formed in their order on a substrate. The device also includes a transparent conductive oxide multi-layer formed on the p-type nitride semiconductor layer. The transparent conductive oxide multi-layer includes two or more layers or transparent conductive oxide layers having different levels of conductivity.
摘要翻译：本发明涉及一种具有高发光效率，低工作电压和高抗静电放电性能的氮化物半导体发光器件。氮化物半导体发光器件包括在衬底上依次形成的n型氮化物半导体层，有源层和p型氮化物半导体层。该器件还包括在p型氮化物半导体层上形成的透明导电氧化物多层。透明导电氧化物多层包括具有不同导电性水平的两层或更多层或透明导电氧化物层。

3. 发明申请

US20070085097A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070085097A1
公开(公告)日：2007-04-19
申请号：US11581335
申请日：2006-10-17
申请人： Sun Kim , Je Kim , Sang Kang , Keun Song , Bang Oh
发明人： Sun Kim , Je Kim , Sang Kang , Keun Song , Bang Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

4. 发明申请

US20070090339A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070090339A1
公开(公告)日：2007-04-26
申请号：US11584504
申请日：2006-10-23
申请人： Dong Lee , Sang Kang , Keun Song , Je Kim , Sang Hong
发明人： Dong Lee , Sang Kang , Keun Song , Je Kim , Sang Hong
IPC分类号： H01L31/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
摘要翻译：氮化物半导体发光器件具有高的内部量子效率，但是工作电压低。氮化物半导体发光器件包括氮化物半导体层; 形成在氮化物半导体层上的具有多个量子阱层和多个量子势垒层的多量子阱结构的有源层; 以及形成在有源层上的p型氮化物半导体层。与氮化物半导体层相邻的量子阱层中的一个具有大于与p氮化物半导体层相邻的另一个量子阱层的能带隙。

5. 发明授权

US08617171B2 Preoperatively planning an arthroplasty procedure and generating a corresponding patient specific arthroplasty resection guide 有权
标题翻译：术前规划关节置换手术并产生相应的患者特异性关节成形术切除指南
公开(公告)号：US08617171B2
公开(公告)日：2013-12-31
申请号：US13086275
申请日：2011-04-13
申请人： Ilwhan Park , Keun Song , Oleg Mishin , Michael Santarella
发明人： Ilwhan Park , Keun Song , Oleg Mishin , Michael Santarella
IPC分类号： A61B17/58 , A61B17/60 , A61F2/00 , A61F5/00
CPC分类号： A61B34/10 , A61B6/505 , A61B17/1675 , A61B17/1764 , A61B2034/102 , A61B2034/105 , A61B2034/108 , A61F2/3859 , A61F2/389 , A61F2/4657 , A61F2002/4633 , A61F2002/4658 , A61F2002/4668 , B33Y80/00 , G06K9/2063 , G06K9/6201 , G06K9/6202 , G06K2209/05 , G06K2209/055 , G06T5/50 , G06T7/0012 , G06T7/33 , G06T17/00 , G06T19/00 , G06T19/20 , G06T2207/10004 , G06T2207/10088 , G06T2207/20221 , G06T2207/30008 , G06T2207/30052 , G06T2210/41 , G06T2219/008 , G06T2219/2004 , Y10T29/49
摘要： Methods of manufacturing a custom arthroplasty resection guide or jig are disclosed herein. For example, one method may include: generating MRI knee coil two dimensional images, wherein the knee coil images include a knee region of a patient; generating MRI body coil two dimensional images, wherein the body coil images include a hip region of the patient, the knee region of the patient and an ankle region of the patient; in the knee coil images, identifying first locations of knee landmarks; in the body coil images, identifying second locations of the knee landmarks; run a transformation with the first and second locations, causing the knee coil images and body coil images to generally correspond with each other with respect to location and orientation.
摘要翻译：本文公开了制造定制关节成形术切除引导件或夹具的方法。例如，一种方法可以包括：产生MRI膝盖线圈二维图像，其中膝盖线圈图像包括患者的膝盖区域; 产生MRI体线圈二维图像，其中身体线圈图像包括患者的臀部区域，患者的膝部区域和患者的踝部区域; 在膝盖线圈图像中，识别膝盖地标的第一个位置; 在身体线圈图像中，识别膝盖地标的第二位置; 运行与第一和第二位置的变换，使得膝盖线圈图像和身体线圈图像相对于位置和取向一般对应。

6. 发明申请

US20060194356A1 Method for manufacturing multi-wavelength semiconductor laser device 审中-公开
标题翻译：制造多波长半导体激光器件的方法
公开(公告)号：US20060194356A1
公开(公告)日：2006-08-31
申请号：US11238319
申请日：2005-09-29
申请人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
发明人： Keun Song , Su Lee , Jin Kim , Tae Kim , Chang Kim , Sang Han
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译：本发明提供一种形成多波长半导体激光器件的方法。该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn（1-xy）P（0≤x≤1,0<= y <= 1）组成的蚀刻停止层）在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后，在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。

7. 发明申请

US20070188242A1 Phase locked loop for stably operating in a matter that is insensitive to variation in process, voltage and temperature and method of operating the same 有权
标题翻译：用于在对工艺，电压和温度变化不敏感的事项中稳定操作的锁相环以及操作该方法的方法
公开(公告)号：US20070188242A1
公开(公告)日：2007-08-16
申请号：US11486136
申请日：2006-07-14
申请人： Keun Song
发明人： Keun Song
IPC分类号： H03L7/00
CPC分类号： H03L7/0898 , H03L7/107 , H03L7/1072 , H03L7/18
摘要： A phase locked loop for stably operating in a matter that is insensitive to variation in PVT and a method of operating the same. The PLL according to the present invention includes a PFD, a charge pump circuit, a loop filter, a VCO, and a peak voltage detector. The PFD compares a phase or frequency of a reference signal with a phase or frequency of an output signal and outputs an up signal or a down signal based on the comparison result. The charge pump circuit generates a pumping current in response to the up signal or the down signal and increases or decreases the pumping current in response to a detection signal. The loop filter outputs control voltage according to the pumping current. The VCO outputs the output signal having a frequency determined based on the control voltage. The peak voltage detector detects the peak value of the control voltage and outputs the detection signal based on the detection result. The PLL detects the peak value of control voltage and controls the operation of a charge pump circuit based on the detection result thereby decreasing the peaking and ringing phenomena of the control voltage and then stably operating in a manner that is insensitive to variation in PVT.
摘要翻译：用于在对PVT变化不敏感的物质中稳定操作的锁相环及其操作方法。根据本发明的PLL包括PFD，电荷泵电路，环路滤波器，VCO和峰值电压检测器。 PFD将参考信号的相位或频率与输出信号的相位或频率进行比较，并根据比较结果输出上行信号或下降信号。电荷泵电路响应于上升信号或下降信号产生泵浦电流，并响应于检测信号增加或减少泵浦电流。环路滤波器根据泵浦电流输出控制电压。 VCO输出具有基于控制电压确定的频率的输出信号。峰值电压检测器检测控制电压的峰值，并根据检测结果输出检测信号。 PLL检测控制电压的峰值，并根据检测结果控制电荷泵电路的运行，从而降低控制电压的峰值和振铃现象，然后以对PVT变化不敏感的方式稳定工作。

8. 发明申请

US20050155694A1 Wear-resistant mechanical component and method of producing the same 审中-公开
标题翻译：耐磨机械部件及其制造方法
公开(公告)号：US20050155694A1
公开(公告)日：2005-07-21
申请号：US11019182
申请日：2004-12-23
申请人： Dong Sim , Kyung Kim , Keun Song
发明人： Dong Sim , Kyung Kim , Keun Song
IPC分类号： C23C24/08 , C23C26/00 , C23C26/02 , B22F3/00 , B32B1/06
CPC分类号： C23C26/02 , C23C24/08 , C23C26/00 , Y10T428/12007 , Y10T428/12507 , Y10T428/12535 , Y10T428/12576
摘要： A wear-resist mechanical component used in a frictional contact area requiring wear-resistance and a method of producing the same is provided. The method comprises the steps of: depositing hard particles of one or more substances selected from the group consisting of carbides, nitrides and borides on an iron-based metal body to a predetermined thickness; depositing binder powders atop of the hard particle layer to a predetermined thickness; and heating the hard particles, the binder powders and the iron-based metal body, so that the iron-base metal body and the hard particles are bonded together. This can obtain a wear-resistant mechanical component having high hardness and excellent wear resistance without having to go through the step of mixing hard particles with binder to form the mixture. The super-hard alloy can be bonded to the base metal body regardless of the shape of the base metal body.
摘要翻译：提供了在需要耐磨性的摩擦接触区域中使用的耐磨机械部件及其制造方法。该方法包括以下步骤：将选自碳化物，氮化物和硼化物的一种或多种物质的硬质颗粒沉积在铁基金属体上至预定厚度; 将硬质颗粒层顶部的粘合剂粉末沉积到预定厚度; 并加热硬质粒子，粘合剂粉末和铁基金属体，使铁基金属体和硬质粒子结合在一起。这可以获得具有高硬度和优异的耐磨性的耐磨机械组件，而不必经过将硬颗粒与粘合剂混合以形成混合物的步骤。无论贱金属体的形状如何，超硬合金均可与基体金属体接合。

9. 发明授权

US08737700B2 Preoperatively planning an arthroplasty procedure and generating a corresponding patient specific arthroplasty resection guide 有权
标题翻译：术前规划关节置换手术并产生相应的患者特异性关节成形术切除指南
公开(公告)号：US08737700B2
公开(公告)日：2014-05-27
申请号：US12760388
申请日：2010-04-14
申请人： Ilwhan Park , Keun Song , Oleg Mishin , Michael Santarella
发明人： Ilwhan Park , Keun Song , Oleg Mishin , Michael Santarella
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： A61B5/055 , A61B5/4528 , A61B5/4851 , A61B6/03 , A61B17/15 , A61B17/155 , A61B17/157 , A61B17/1703 , A61B17/1725 , A61B17/1739 , A61B17/1742 , A61B17/1757 , A61B17/1764 , A61B2034/108 , B33Y50/00 , B33Y80/00
摘要： Methods of manufacturing a custom arthroplasty resection guide or jig are disclosed herein. For example, one method may include: generating MRI knee coil two dimensional images, wherein the knee coil images include a knee region of a patient; generating MRI body coil two dimensional images, wherein the body coil images include a hip region of the patient, the knee region of the patient and an ankle region of the patient; in the knee coil images, identifying first locations of knee landmarks; in the body coil images, identifying second locations of the knee landmarks; run a transformation with the first and second locations, causing the knee coil images and body coil images to generally correspond with each other with respect to location and orientation.
摘要翻译：本文公开了制造定制关节成形术切除引导件或夹具的方法。例如，一种方法可以包括：产生MRI膝盖线圈二维图像，其中膝盖线圈图像包括患者的膝盖区域; 产生MRI体线圈二维图像，其中身体线圈图像包括患者的臀部区域，患者的膝部区域和患者的踝部区域; 在膝盖线圈图像中，识别膝盖地标的第一个位置; 在身体线圈图像中，识别膝盖地标的第二位置; 运行与第一和第二位置的变换，使得膝盖线圈图像和身体线圈图像相对于位置和取向一般对应。

10. 发明申请

US20110214279A1 PREOPERATIVELY PLANNING AN ARTHROPLASTY PROCEDURE AND GENERATING A CORRESPONDING PATIENT SPECIFIC ARTHROPLASTY RESECTION GUIDE 有权
标题翻译：预先计划生殖细胞程序并产生相应的患者特异性ARTHROPLASTY RESECTION指南
公开(公告)号：US20110214279A1
公开(公告)日：2011-09-08
申请号：US13086275
申请日：2011-04-13
申请人： Ilwhan Park , Keun Song , Oleg Mishin , Michael Santarella
发明人： Ilwhan Park , Keun Song , Oleg Mishin , Michael Santarella
IPC分类号： B23P17/04
CPC分类号： A61B34/10 , A61B6/505 , A61B17/1675 , A61B17/1764 , A61B2034/102 , A61B2034/105 , A61B2034/108 , A61F2/3859 , A61F2/389 , A61F2/4657 , A61F2002/4633 , A61F2002/4658 , A61F2002/4668 , B33Y80/00 , G06K9/2063 , G06K9/6201 , G06K9/6202 , G06K2209/05 , G06K2209/055 , G06T5/50 , G06T7/0012 , G06T7/33 , G06T17/00 , G06T19/00 , G06T19/20 , G06T2207/10004 , G06T2207/10088 , G06T2207/20221 , G06T2207/30008 , G06T2207/30052 , G06T2210/41 , G06T2219/008 , G06T2219/2004 , Y10T29/49
摘要： Methods of manufacturing a custom arthroplasty resection guide or jig are disclosed herein. For example, one method may include: generating MRI knee coil two dimensional images, wherein the knee coil images include a knee region of a patient; generating MRI body coil two dimensional images, wherein the body coil images include a hip region of the patient, the knee region of the patient and an ankle region of the patient; in the knee coil images, identifying first locations of knee landmarks; in the body coil images, identifying second locations of the knee landmarks; run a transformation with the first and second locations, causing the knee coil images and body coil images to generally correspond with each other with respect to location and orientation.
摘要翻译：本文公开了制造定制关节成形术切除引导件或夹具的方法。例如，一种方法可以包括：产生MRI膝盖线圈二维图像，其中膝盖线圈图像包括患者的膝盖区域; 产生MRI体线圈二维图像，其中身体线圈图像包括患者的臀部区域，患者的膝部区域和患者的踝部区域; 在膝盖线圈图像中，识别膝盖地标的第一个位置; 在身体线圈图像中，识别膝盖地标的第二位置; 运行与第一和第二位置的变换，使得膝盖线圈图像和身体线圈图像相对于位置和取向一般对应。

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