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2. 发明授权

US06955974B2 Method for forming isolation layer of semiconductor device 失效
标题翻译：形成半导体器件隔离层的方法
公开(公告)号：US06955974B2
公开(公告)日：2005-10-18
申请号：US10877714
申请日：2004-06-25
申请人： Tae Hyeok Lee , Cheol Hwan Park , Dong Su Park , Ho Jin Cho , Eun A Lee
发明人： Tae Hyeok Lee , Cheol Hwan Park , Dong Su Park , Ho Jin Cho , Eun A Lee
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8242
CPC分类号： H01L21/76224 , H01L27/10894
摘要： A method for forming an isolation layer of a semiconductor device, which comprises the steps of: a) sequentially forming a pad oxide layer and a pad nitride layer on a silicon substrate; b) etching the pad nitride layer, the pad oxide layer, and the silicon substrate, thereby forming a trench; c) thermal-oxidizing the resultant substrate to form a sidewall oxide layer on a surface of the trench; d) nitrifying the sidewall oxide layer through the use of NH3 annealing; e) depositing a liner aluminum nitride layer on an entire surface of the silicon substrate inclusive of the nitrated sidewall oxide layer; f) depositing a buried oxide layer on the liner aluminum nitride layer to fill the trench; g) performing a chemical mechanical polishing process with respect to the buried oxide layer; and h) eliminating the pad nitride layer.
摘要翻译：一种用于形成半导体器件的隔离层的方法，包括以下步骤：a）在硅衬底上依次形成焊盘氧化物层和衬垫氮化物层; b）蚀刻衬垫氮化物层，衬垫氧化物层和硅衬底，从而形成沟槽; c）热氧化所得衬底以在沟槽的表面上形成侧壁氧化物层; d）通过使用NH 3退火对侧壁氧化物层进行硝化; e）在包括所述硝化侧壁氧化物层的所述硅衬底的整个表面上沉积衬里氮化铝层; f）在衬里氮化铝层上沉积掩埋氧化物层以填充沟槽; g）对所述掩埋氧化物层进行化学机械抛光工艺; 以及h）消除所述衬垫氮化物层。

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