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    • 4. 发明申请
    • MAGNETORESISTIVE MEMORY CELL AND METHOD OF MANUFACTURING MEMORY DEVICE INCLUDING THE SAME
    • 磁记忆体单元及其制造方法
    • US20100224920A1
    • 2010-09-09
    • US12643011
    • 2009-12-21
    • Seung Hyun LEE
    • Seung Hyun LEE
    • H01L29/82H01L21/00
    • H01L27/228G11C11/16
    • A magnetoresistive memory cell includes a magnetic tunnel junction element; and a selection transistor, wherein the selection transistor includes a first conductive type semiconductor layer, a gate electrode formed on the first conductive type semiconductor layer with a gate insulation film interposed between the first conductive type semiconductor layer and the gate electrode, and second conductive type first and second diffusion regions formed in the first conductive type semiconductor such that the first and second diffusion regions are spaced apart from each other. The magnetic tunnel junction element includes a free magnetization layer, a fixed magnetization layer, and a tunnel barrier layer interposed between the free magnetization layer and the fixed magnetization layer, and the free magnetization layer of the magnetic tunnel junction element is electrically connected to any one of the first and second diffusion regions of the selection transistor.
    • 磁阻存储单元包括磁性隧道结元件; 以及选择晶体管,其中所述选择晶体管包括第一导电类型半导体层,形成在所述第一导电类型半导体层上的栅电极,其中介于所述第一导电类型半导体层和所述栅极之间的栅极绝缘膜,以及第二导电类型 形成在第一导电型半导体中的第一和第二扩散区域使得第一和第二扩散区域彼此间隔开。 磁性隧道结元件包括自由磁化层,固定磁化层和介于自由磁化层和固定磁化层之间的隧道势垒层,并且磁性隧道结元件的自由磁化层电连接到任何一个 的选择晶体管的第一和第二扩散区域。