专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090263975A1 FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL 有权
标题翻译：用于形成含金属的含硅绝缘膜的膜形成方法和装置
公开(公告)号：US20090263975A1
公开(公告)日：2009-10-22
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

2. 发明授权

US08034673B2 Film formation method and apparatus for forming silicon-containing insulating film doped with metal 有权
标题翻译：用于形成掺杂有金属的含硅绝缘膜的成膜方法和装置
公开(公告)号：US08034673B2
公开(公告)日：2011-10-11
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

3. 发明授权

US07964241B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07964241B2
公开(公告)日：2011-06-21
申请号：US11892948
申请日：2007-08-28
申请人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
发明人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译：通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体和含有碳氢化合物气体的第四工艺气体。第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体。第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

4. 发明申请

US20080063791A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20080063791A1
公开(公告)日：2008-03-13
申请号：US11892948
申请日：2007-08-28
申请人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
发明人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译：通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体和含有碳氢化合物气体的第四工艺气体。第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体。第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

5. 发明授权

US08591989B2 SiCN film formation method and apparatus 有权
标题翻译： SiCN成膜方法及装置
公开(公告)号：US08591989B2
公开(公告)日：2013-11-26
申请号：US13552844
申请日：2012-07-19
申请人： Pao-Hwa Chou , Kazuhide Hasebe
发明人： Pao-Hwa Chou , Kazuhide Hasebe
IPC分类号： C23C16/36 , C23C16/52
CPC分类号： C23C16/36 , C23C16/45531 , C23C16/45546
摘要： A method for forming an SiCN film on target substrates placed in a process field inside a process container repeats a unit cycle a plurality of times to laminate thin films respectively formed, thereby forming the SiCN film with a predetermined thickness. The unit cycle includes performing and suspending supply of a silicon source gas, a nitriding gas, and a carbon hydride gas respectively from first, second, and third gas distribution nozzles to the process field. The unit cycle does not turn any one of the gases into plasma but heats the process field to a set temperature of 300 to 700° C. with the supply of the carbon hydride gas performed for a time period in total longer than that of the supply of the silicon source gas, so as to provide the SiCN film with a carbon concentration of 15.2% to 28.5%.
摘要翻译：在放置在处理容器内的工艺场中的目标衬底上形成SiCN膜的方法重复多次单元循环以层压分别形成的薄膜，由此形成具有预定厚度的SiCN膜。单位周期包括分别从第一，第二和第三气体分配喷嘴向处理场执行和暂停供应硅源气体，氮化气体和碳氢化合物气体。单位循环不会将任何一种气体转化为等离子体，但是将过程场加热到设定温度为300至700℃，碳氢化合物气体的供应时间总计比供应更长的硅源气体，以提供碳浓度为15.2％至28.5％的SiCN膜。

6. 发明授权

US07758920B2 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US07758920B2
公开(公告)日：2010-07-20
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

7. 发明申请

US20090275150A1 FILM FORMATION APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS 有权
标题翻译：薄膜形成装置和半导体工艺方法
公开(公告)号：US20090275150A1
公开(公告)日：2009-11-05
申请号：US12504454
申请日：2009-07-16
申请人： Kazuhide Hasebe , Pao-Hwa Chou , Chaeho Kim
发明人： Kazuhide Hasebe , Pao-Hwa Chou , Chaeho Kim
IPC分类号： H01L21/66
CPC分类号： C23C16/24 , C23C16/45523 , Y10T117/1024
摘要： A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.
摘要翻译：一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。

8. 发明授权

US07507676B2 Film formation method and apparatus for semiconductor process 失效
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07507676B2
公开(公告)日：2009-03-24
申请号：US11623483
申请日：2007-01-16
申请人： Pao-Hwa Chou , Kazuhide Hasebe
发明人： Pao-Hwa Chou , Kazuhide Hasebe
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/36 , C23C16/452 , C23C16/45531 , C23C16/45546 , H01L21/02167 , H01L21/02211 , H01L21/3148 , H01L21/318
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
摘要翻译：通过CVD在靶基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体的第二工艺气体和含有碳氢化合物气体的第三工艺气体的工艺领域。该方法包括重复地向处理区域供应第一处理气体，向处理区域供应第二处理气体，以及向处理区域供应第三处理气体。第三处理气体的供给包括通过激励机构激励第三处理气体的向处理场供给第三处理气体的激励期间。

9. 发明申请

US20080014758A1 Film formation apparatus for semiconductor process and method for using the same 有权
标题翻译：用于半导体工艺的成膜装置及其使用方法
公开(公告)号：US20080014758A1
公开(公告)日：2008-01-17
申请号：US11822979
申请日：2007-07-11
申请人： Pao-Hwa Chou , Kazuhide Hasebe
发明人： Pao-Hwa Chou , Kazuhide Hasebe
IPC分类号： H01L21/469 , B05C11/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/4405
摘要： A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.
摘要翻译：使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。

10. 发明申请

US20050287775A1 Film formation apparatus and method for semiconductor process 有权
标题翻译：用于半导体工艺的成膜装置和方法
公开(公告)号：US20050287775A1
公开(公告)日：2005-12-29
申请号：US11166073
申请日：2005-06-27
申请人： Kazuhide Hasebe , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Pao-Hwa Chou
IPC分类号： C23C16/34 , C23C16/452 , H01J37/32 , H01L21/20 , H01L21/314 , H01L21/318 , H01L21/36
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45523 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01J37/3244 , H01J2237/3321 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/3185
摘要： A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.
摘要翻译：半导体工艺的成膜方法被布置成通过CVD在目标衬底上形成薄膜，同时提供用于成膜的第一工艺气体和用于与第一工艺气体反应的第二工艺气体到容纳靶的工艺场基质。该方法交替地包括第一至第四步骤。第一步进行第一和第二工艺气体的供应。第二步停止向工艺场供应第一和第二工艺气体。第三步骤在停止向处理场供应第一处理气体的同时，向处理区域供应第二处理气体。第四步骤停止将第一和第二工艺气体供应到工艺现场。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式