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1. 发明授权

US07964241B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07964241B2
公开(公告)日：2011-06-21
申请号：US11892948
申请日：2007-08-28
申请人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
发明人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译：通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体和含有碳氢化合物气体的第四工艺气体。第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体。第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

2. 发明申请

US20080063791A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20080063791A1
公开(公告)日：2008-03-13
申请号：US11892948
申请日：2007-08-28
申请人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
发明人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译：通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体和含有碳氢化合物气体的第四工艺气体。第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体。第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

3. 发明申请

US20090263975A1 FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL 有权
标题翻译：用于形成含金属的含硅绝缘膜的膜形成方法和装置
公开(公告)号：US20090263975A1
公开(公告)日：2009-10-22
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

4. 发明授权

US08034673B2 Film formation method and apparatus for forming silicon-containing insulating film doped with metal 有权
标题翻译：用于形成掺杂有金属的含硅绝缘膜的成膜方法和装置
公开(公告)号：US08034673B2
公开(公告)日：2011-10-11
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

5. 发明申请

US20080311760A1 Film formation method and apparatus for semiconductor process 审中-公开
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20080311760A1
公开(公告)日：2008-12-18
申请号：US12155678
申请日：2008-06-06
申请人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Kota Umezawa , Pao-Hwa Chou
发明人： Nobutake Nodera , Masanobu Matsunaga , Kazuhide Hasebe , Kota Umezawa , Pao-Hwa Chou
IPC分类号： H01L21/31 , B05C11/10
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.
摘要翻译：在被配置为选择性地供给包含硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体的工艺过程中进行多个循环，在目标衬底上形成氮化硅膜。每个循环包括在保持第二处理气体的供给关闭状态的同时进行第一处理气体的供给的第一供给步骤和在保持关闭的同时进行第二处理气体的供给的第二供给步骤 - 第一工艺气体的供给状态。该方法被布置为重复第一循环集合，其中第二供给步骤包括激发第二处理气体的激发周期，以及第二循环，其中第二供给步骤不包括激发第二处理气体的周期。

6. 发明授权

US08383522B2 Micro pattern forming method 有权
标题翻译：微型成型方法
公开(公告)号：US08383522B2
公开(公告)日：2013-02-26
申请号：US13154728
申请日：2011-06-07
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
摘要翻译：提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。

7. 发明授权

US08025931B2 Film formation apparatus for semiconductor process and method for using the same 有权
标题翻译：用于半导体工艺的成膜装置及其使用方法
公开(公告)号：US08025931B2
公开(公告)日：2011-09-27
申请号：US11822979
申请日：2007-07-11
申请人： Pao-Hwa Chou , Kazuhide Hasebe
发明人： Pao-Hwa Chou , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/4405
摘要： A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.
摘要翻译：使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。

8. 发明申请

US20100130015A1 PATTERNING METHOD 有权
标题翻译：绘图方法
公开(公告)号：US20100130015A1
公开(公告)日：2010-05-27
申请号：US12441754
申请日：2008-06-06
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/32
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
摘要翻译：公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过向所述基板交替地供给含有有机硅的第一气体和含有活性氧的第二气体，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。

9. 发明申请

US20090191722A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20090191722A1
公开(公告)日：2009-07-30
申请号：US12320018
申请日：2009-01-14
申请人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译：使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

10. 发明授权

US07300885B2 Film formation apparatus and method for semiconductor process 有权
标题翻译：用于半导体工艺的成膜装置和方法
公开(公告)号：US07300885B2
公开(公告)日：2007-11-27
申请号：US11166073
申请日：2005-06-27
申请人： Kazuhide Hasebe , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Pao-Hwa Chou
IPC分类号： H01L21/31
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45523 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01J37/3244 , H01J2237/3321 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/3185
摘要： A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.
摘要翻译：半导体工艺的成膜方法被布置成通过CVD在目标衬底上形成薄膜，同时提供用于成膜的第一工艺气体和用于与第一工艺气体反应的第二工艺气体到容纳靶的工艺场基质。该方法交替地包括第一至第四步骤。第一步进行第一和第二工艺气体的供应。第二步停止向工艺场供应第一和第二工艺气体。第三步骤在停止向处理场供应第一处理气体的同时，向处理区域供应第二处理气体。第四步骤停止将第一和第二工艺气体供应到工艺现场。

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