专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06642559B1 Structure and process for improving high frequency isolation in semiconductor substrates 失效
标题翻译：用于改善半导体衬底中的高频隔离的结构和工艺
公开(公告)号：US06642559B1
公开(公告)日：2003-11-04
申请号：US09291494
申请日：1999-04-14
申请人： Kenneth Vern Buer , Anthony Francis Quaglietta , Allen Hanson
发明人： Kenneth Vern Buer , Anthony Francis Quaglietta , Allen Hanson
IPC分类号： H01L2980
CPC分类号： H01L21/76 , H01L21/7605 , H01L23/481 , H01L23/66 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An isolation structure for high frequency integrated circuits is a conductive material disposed over a region of active gallium arsenide substrate. The conductive material over the active region creates a lossy RF path to reduce undesired coupling between adjacent conductors. In one case, two RF signal lines (1,2) terminated at the same via pad (3) have weaker coupling than in prior art via structures due to the lossy RF structure disposed on isolating fractional portions (10,11) of the via pad (3). The isolating fractional portion (10,11) are intermediate terminating fractional portions (8,9) of the via pad (3) to which the signal lines (1,2) are connected. In another case, two parallel bias lines (12,13) are disposed over an active layer region (6) increasing the RF loss between them and advantageously reducing the RF coupling. The reduced RF coupling improves RF isolation and permits increased miniaturization.
摘要翻译：用于高频集成电路的隔离结构是设置在有源砷化镓衬底的区域上的导电材料。有源区域上的导电材料产生有损的RF路径以减少相邻导体之间的不期望的耦合。在一种情况下，由于设置在隔离通孔的分数部分（10,11）上的有损RF结构，在相同的通孔焊盘（3）处终止的两个RF信号线（1,2）具有比现有技术的通孔结构更弱的耦合，垫（3）。隔离分数部分（10,11）是信号线（1,2）连接到的通孔焊盘（3）的中间终端部分部分（8,9）。在另一种情况下，两个平行偏置线（12,13）设置在有源层区域（6）上，增加它们之间的RF损耗并且有利地减小RF耦合。减少的射频耦合可提高RF隔离度，并允许增加小型化。

2. 发明授权

US08824983B2 System and method of prebias for rapid power amplifier response correction 有权
标题翻译：用于快速功率放大器响应校正的prebias的系统和方法
公开(公告)号：US08824983B2
公开(公告)日：2014-09-02
申请号：US13536009
申请日：2012-06-28
申请人： Mark M. Doherty , Lui Lam , Chun-Wen Paul Huang , Anthony Francis Quaglietta
发明人： Mark M. Doherty , Lui Lam , Chun-Wen Paul Huang , Anthony Francis Quaglietta
IPC分类号： H04B1/04 , H03F3/21 , H03F1/30 , H03F3/24 , H03G3/30
CPC分类号： H03G3/3047 , H03F1/302 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/408 , H03F2200/447
摘要： A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.
摘要翻译：提供了用于减少用于RF通信的集成电路功率放大器（PA）的动态EVM的系统和方法。在多级PA中，在接收到RF信号数据脉冲串之前，在接收到Tx使能时，最大的放大级被高振幅电流脉冲偏置。高幅度电流脉冲导致多级PA的总ICQ预算的大部分通过最大的放大级，导致整个集成电路快速接近稳态工作条件。在脉冲衰减后，平滑偏置电流被施加到最大放大级，以补偿瞬态偏置电流电平，而标准偏置电路仍然接近稳态温度。

3. 发明授权

US06600179B2 Power amplifier with base and collector straps 失效
标题翻译：功率放大器，带底座和收集带
公开(公告)号：US06600179B2
公开(公告)日：2003-07-29
申请号：US10004309
申请日：2001-11-01
申请人： Anthony Francis Quaglietta , Allen William Hanson , Thomas Aaron Winslow
发明人： Anthony Francis Quaglietta , Allen William Hanson , Thomas Aaron Winslow
IPC分类号： H01L310328
CPC分类号： H03F3/607 , H01L23/4821 , H01L27/0605 , H01L29/41708 , H01L29/42304 , H01L29/73 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector contact pad. Base straps establish base bias and electrically connect a dc current source with bases of the transistors through resistive elements.
摘要翻译：半导体放大器包括在一组晶体管上形成空气桥的收集器带，并且在晶体管和集电极接触焊盘的集电极之间形成并联电连接。基带构建基极偏置，并通过电阻元件将直流电源与晶体管的基极电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式