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1. 发明申请

US20130034144A1 SYSTEM AND METHOD OF PREBIAS FOR RAPID POWER AMPLIFIER RESPONSE CORRECTION 有权
标题翻译：用于快速放大器响应校正的系统和方法
公开(公告)号：US20130034144A1
公开(公告)日：2013-02-07
申请号：US13536009
申请日：2012-06-28
申请人： Mark Doherty , Lui (Ray) Lam , Chun-Wen Paul Huang
发明人： Mark Doherty , Lui (Ray) Lam , Chun-Wen Paul Huang
IPC分类号： H04L25/49 , H04L27/01
CPC分类号： H03G3/3047 , H03F1/302 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/408 , H03F2200/447
摘要： A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.
摘要翻译：提供了用于减少用于RF通信的集成电路功率放大器（PA）的动态EVM的系统和方法。在多级PA中，在接收到RF信号数据脉冲串之前，在接收到Tx使能时，最大的放大级被高振幅电流脉冲偏置。高幅度电流脉冲导致多级PA的总ICQ预算的大部分通过最大的放大级，导致整个集成电路快速接近稳态工作条件。在脉冲衰减后，平滑偏置电流被施加到最大放大级，以补偿瞬态偏置电流电平，而标准偏置电路仍然接近稳态温度。

2. 发明申请

US20110254614A1 System and Method of Transistor Switch Biasing in a High Power Semiconductor Switch 有权
标题翻译：大功率半导体开关中晶体管开关偏置的系统和方法
公开(公告)号：US20110254614A1
公开(公告)日：2011-10-20
申请号：US12761639
申请日：2010-04-16
申请人： Chun-Wen Paul Huang , Mark Doherty , Philip Michael Antognetti
发明人： Chun-Wen Paul Huang , Mark Doherty , Philip Michael Antognetti
IPC分类号： H03K3/01
CPC分类号： H03K17/693 , H03K17/063 , H03K2217/0054 , H04B1/44
摘要： A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
摘要翻译：提供了一种用于偏置基于半导体的大功率开关中的晶体管开关的系统和方法。关闭晶体管开关的关态Vgsd偏置基于可接受的杂散谐波发射和线性度。

3. 发明申请

US20110128078A1 System and Method of Prebias for Rapid Power Amplifier Response Correction 有权
标题翻译：用于快速功率放大器响应校正的Prebias系统和方法
公开(公告)号：US20110128078A1
公开(公告)日：2011-06-02
申请号：US12629168
申请日：2009-12-02
申请人： Mark Doherty , Lui (Ray) Lam , Chun-Wen Paul Huang
发明人： Mark Doherty , Lui (Ray) Lam , Chun-Wen Paul Huang
IPC分类号： H03G3/30
CPC分类号： H03G3/3047 , H03F1/302 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/408 , H03F2200/447
摘要： A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.
摘要翻译：提供了用于减少用于RF通信的集成电路功率放大器（PA）的动态EVM的系统和方法。在多级PA中，在接收到RF信号数据脉冲串之前，在接收到Tx使能时，最大的放大级被高振幅电流脉冲偏置。高幅度电流脉冲导致多级PA的总ICQ预算的大部分通过最大的放大级，导致整个集成电路快速接近稳态工作条件。在脉冲衰减后，平滑偏置电流被施加到最大放大级，以补偿瞬态偏置电流电平，而标准偏置电路仍然接近稳态温度。

4. 发明授权

US08824983B2 System and method of prebias for rapid power amplifier response correction 有权
标题翻译：用于快速功率放大器响应校正的prebias的系统和方法
公开(公告)号：US08824983B2
公开(公告)日：2014-09-02
申请号：US13536009
申请日：2012-06-28
申请人： Mark M. Doherty , Lui Lam , Chun-Wen Paul Huang , Anthony Francis Quaglietta
发明人： Mark M. Doherty , Lui Lam , Chun-Wen Paul Huang , Anthony Francis Quaglietta
IPC分类号： H04B1/04 , H03F3/21 , H03F1/30 , H03F3/24 , H03G3/30
CPC分类号： H03G3/3047 , H03F1/302 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/408 , H03F2200/447
摘要： A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.
摘要翻译：提供了用于减少用于RF通信的集成电路功率放大器（PA）的动态EVM的系统和方法。在多级PA中，在接收到RF信号数据脉冲串之前，在接收到Tx使能时，最大的放大级被高振幅电流脉冲偏置。高幅度电流脉冲导致多级PA的总ICQ预算的大部分通过最大的放大级，导致整个集成电路快速接近稳态工作条件。在脉冲衰减后，平滑偏置电流被施加到最大放大级，以补偿瞬态偏置电流电平，而标准偏置电路仍然接近稳态温度。

5. 发明授权

US08749032B2 Integrated circuit with improved transmission line structure and electromagnetic shielding between radio frequency circuit paths 有权
标题翻译：集成电路，具有改善的射频线路结构和射频电路之间的电磁屏蔽
公开(公告)号：US08749032B2
公开(公告)日：2014-06-10
申请号：US12628324
申请日：2009-12-01
申请人： Mark Doherty , Michael McPartlin , Chun-Wen Paul Huang
发明人： Mark Doherty , Michael McPartlin , Chun-Wen Paul Huang
IPC分类号： H01L23/552
CPC分类号： H01L23/552 , H01L23/481 , H01L23/5225 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/19032 , H01L2924/3011 , H01L2924/00012 , H01L2924/00
摘要： An integrated circuit is disclosed having through silicon vias spaced apart one from another and conductors, each coupled to one or more of the through silicon vias, the conductors in aggregate in use forming a segmented conductive plane maintained at a same potential and forming an electromagnetic shield.
摘要翻译：公开了一种集成电路，其具有通过彼此间隔开的硅通孔和各自连接到一个或多个通孔硅导体的导体，在使用中的聚集体中的导体形成保持在相同电位的分段导电平面并形成电磁屏蔽。

6. 发明授权

US08451044B2 Switching circuit 有权
标题翻译：开关电路
公开(公告)号：US08451044B2
公开(公告)日：2013-05-28
申请号：US12493437
申请日：2009-06-29
申请人： John Nisbet , Michael McPartlin , Chun-Wen Paul Huang
发明人： John Nisbet , Michael McPartlin , Chun-Wen Paul Huang
IPC分类号： H03K17/16
CPC分类号： H04B1/44 , H03K17/687 , H03K2217/0036
摘要： A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complementary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output.
摘要翻译：公开了一种用于控制基于晶体管的开关的方法。提供了用于将信号从输入端口切换到其输出端口的开关电路。还提供了用于将信号从输入端口切换到地的分流电路。生成用于偏置分流电路的控制端口的控制信号，并且产生大致互补的控制信号以用于偏置开关电路以分流在输入端口接收的信号或将信号切换到输出端口。用于沿着输入端口和输出端之间的信号路径偏置开关电路内的端口的另一个偏置信号。

7. 发明申请

US20120202438A1 SYSTEM AND METHOD OF TRANSISTOR SWITCH BIASING IN A HIGH POWER SEMICONDUCTOR SWITCH 有权
标题翻译：高功率半导体开关中晶体管开关偏置的系统与方法
公开(公告)号：US20120202438A1
公开(公告)日：2012-08-09
申请号：US13345423
申请日：2012-01-06
申请人： Chun-Wen Paul Huang , Mark Doherty , Philip Michael Antognetti
发明人： Chun-Wen Paul Huang , Mark Doherty , Philip Michael Antognetti
IPC分类号： H04B1/44 , H03K17/687 , H03K17/56
CPC分类号： H03K17/693 , H03K17/063 , H03K2217/0054 , H04B1/44
摘要： A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
摘要翻译：提供了一种用于偏置基于半导体的大功率开关中的晶体管开关的系统和方法。关闭晶体管开关的关态Vgsd偏置基于可接受的杂散谐波发射和线性度。

8. 发明申请

US20100140758A1 Integrated Circuit with Improved Transmission Line Structure and Electromagnetic Shielding Between Radio Frequency Circuit Paths 有权
标题翻译：具有改善传输线结构的集成电路和射频电路之间的电磁屏蔽
公开(公告)号：US20100140758A1
公开(公告)日：2010-06-10
申请号：US12628324
申请日：2009-12-01
申请人： Mark Doherty , Michael McPartlin , Chun-Wen Paul Huang
发明人： Mark Doherty , Michael McPartlin , Chun-Wen Paul Huang
IPC分类号： H01L23/552
CPC分类号： H01L23/552 , H01L23/481 , H01L23/5225 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/19032 , H01L2924/3011 , H01L2924/00012 , H01L2924/00
摘要： An integrated circuit is disclosed having through silicon vias spaced apart one from another and conductors, each coupled to one or more of the through silicon vias, the conductors in aggregate in use forming a segmented conductive plane maintained at a same potential and forming an electromagnetic shield.
摘要翻译：公开了一种集成电路，其具有通过彼此间隔开的硅通孔和各自连接到一个或多个通孔硅导体的导体，在使用中的聚集体中的导体形成保持在相同电位的分段导电平面并形成电磁屏蔽。

9. 发明授权

US07359677B2 Device and methods for high isolation and interference suppression switch-filter 有权
标题翻译：高隔离和干扰抑制开关滤波器的设备和方法
公开(公告)号：US07359677B2
公开(公告)日：2008-04-15
申请号：US11149143
申请日：2005-06-10
申请人： Chun-Wen Paul Huang , William Vaillancourt
发明人： Chun-Wen Paul Huang , William Vaillancourt
IPC分类号： H04B1/44
CPC分类号： H04B1/48 , H04B1/525
摘要： Systems and methods are provided for a stacked die configuration of a high isolation switch and a rejection filter where transmit and receive signals are desired to have a high out-of-band rejection and a low loss band-pass region. In some aspects of the invention the high isolation switch is a double pole double throw switch modified to operate as a high isolation single pole double throw (SPDT) switch. In some aspects of the invention the high isolation switch is a conventional high isolation SPDT switch. The switch is mounted on a low profile rejection filter having metallization on a portion of an outer surface of the rejection filter. The metallization on the outer surface of the rejection filter provides an AC ground layer in close proximity to the switch that provides a short coupling path between the switch and the AC ground. The resulting switch-filter component also results in a smaller footprint than if the two devices were mounted individually and/or adjacently. The switch-filter component has applications in devices requiring high isolation between transmit and receive paths, for example use within a front-end module (FEM) of a single antenna, multi-radio device.
摘要翻译：提供了用于高隔离开关和抑制滤波器的堆叠管芯配置的系统和方法，其中希望发射和接收信号具有高的带外抑制和低损耗带通区域。在本发明的一些方面，高隔离开关是双极双掷开关，被修改为作为高隔离单极双掷（SPDT）开关工作。在本发明的一些方面，高隔离开关是传统的高隔离SPDT开关。该开关安装在具有在拒绝滤波器的外表面的一部分上具有金属化的薄型阻挡滤波器。在拒绝滤波器的外表面上的金属化提供了紧邻开关的交流接地层，其在开关和AC地之间提供短的耦合路径。所产生的开关滤波器组件还导致比如果两个装置单独地和/或相邻地安装的更小的占地面积。开关滤波器组件在需要在发射和接收路径之间高隔离的设备中具有应用，例如在单个天线的前端模块（FEM），多无线电设备中使用。

10. 发明授权

US07206731B2 Electromagnetic/circuit co-simulation and co-optimization with parametric layout components 有权
标题翻译：电磁/电路协同仿真和参数布局组件的共同优化
公开(公告)号：US07206731B2
公开(公告)日：2007-04-17
申请号：US10452820
申请日：2003-06-02
申请人： Jeannick Sercu , Filip Demuynck , Hee-Soo Lee , Shihab Al-Kuran , Samir Hammadi , Chun-Wen Paul Huang
发明人： Jeannick Sercu , Filip Demuynck , Hee-Soo Lee , Shihab Al-Kuran , Samir Hammadi , Chun-Wen Paul Huang
IPC分类号： G06F17/50 , H05K9/00
CPC分类号： G06F17/5036
摘要： Simulation of electromagnetic characteristics of an electrical circuit uses netlist data defining component instances, including layout component instances, and their topological interconnection in an electrical circuit. A circuit simulation is performed using the netlist data, involving use of a model for each layout component instance. An attempt is made to retrieve an existing simulation model of the layout component instance from a database of such layout component simulation models. If no suitable simulation model can be found in the database, an attempt is made to interpolate a new simulation model from among existing simulation models in the database. If interpolation is determined not to be feasible, then an electromagnetic simulation of the layout component instance is performed to develop a new electromagnetic simulation model. This new model is used in the circuit simulation, and added to the database for future use.
摘要翻译：模拟电路的电磁特性使用定义组件实例的网表数据，包括布局组件实例及其在电路中的拓扑互连。使用网表数据执行电路仿真，涉及对每个布局组件实例使用模型。尝试从这种布局组件仿真模型的数据库中检索布局组件实例的现有仿真模型。如果在数据库中没有找到合适的仿真模型，则尝试从数据库中的现有仿真模型中插入新的仿真模型。如果确定插值是不可行的，则执行布局组件实例的电磁仿真以开发新的电磁仿真模型。这种新型号用于电路仿真，并添加到数据库中供将来使用。

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