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1. 发明授权

US06847544B1 Magnetic memory which detects changes between first and second resistive states of memory cell 有权
标题翻译：磁存储器，用于检测存储器单元的第一和第二电阻状态之间的变化
公开(公告)号：US06847544B1
公开(公告)日：2005-01-25
申请号：US10689144
申请日：2003-10-20
申请人： Kenneth Kay Smith , Frederick A. Perner , Richard Lee Hilton
发明人： Kenneth Kay Smith , Frederick A. Perner , Richard Lee Hilton
IPC分类号： G11C11/14 , G11C11/00
CPC分类号： G11C11/14
摘要： A magnetic memory which detects changes between resistive states of a memory cell is disclosed. In one embodiment the magnetic memory includes a memory cell which has first and second resistive states. First and second write conductors are configured to conduct first and second currents to change the memory cell between the first and the second resistive states. The first and the second write conductors are routed in first and second directions and intersect the memory cell. First and second sense conductors are configured to conduct a sense current through the memory cell. A sense circuit coupled to the second sense conductor is configured to detect the change between the first and the second resistive states.
摘要翻译：公开了一种用于检测存储器单元的电阻状态之间的变化的磁存储器。在一个实施例中，磁存储器包括具有第一和第二电阻状态的存储单元。第一和第二写入导体被配置为传导第一和第二电流以改变第一和第二电阻状态之间的存储单元。第一和第二写导体在第一和第二方向上布线，并与存储单元相交。第一和第二感测导体被配置为通过存储器单元传导感测电流。耦合到第二感测导体的感测电路被配置为检测第一和第二电阻状态之间的变化。

2. 发明授权

US06617597B2 Circuits and methods for electron-beam control 失效
标题翻译：电子束控制的电路和方法
公开(公告)号：US06617597B2
公开(公告)日：2003-09-09
申请号：US09997185
申请日：2001-11-30
申请人： Richard Lee Hilton
发明人： Richard Lee Hilton
IPC分类号： A61N500
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/1418 , H01J3/00 , H01J2201/308
摘要： An electron-beam controller (EBC) capable of controlling the power in an electron-beam is disclosed. The EBC can be implemented with an emitter, an extractor, a current mirror, and an input current having a magnitude responsive to the desired electron beam current. An EBC suited for low-efficiency emitters is also disclosed. A method for controlling the power intensity of an electron-beam over time is also disclosed. The method includes the steps of: (1) providing an emitter at a first voltage, (2) providing a target at a second voltage, (3) introducing an extractor at a controllable third voltage, (4) estimating the actual electron beam energy by sensing the emitter current; and (5) adjusting the third voltage in response to the sensed emitter current.
摘要翻译：公开了一种能够控制电子束功率的电子束控制器（EBC）。 EBC可以用发射器，提取器，电流镜和具有响应于期望的电子束电流的量级的输入电流来实现。还披露了适用于低效率发射器的EBC。还公开了一种用于随时间控制电子束的功率强度的方法。该方法包括以下步骤：（1）提供第一电压的发射极，（2）以第二电压提供目标，（3）以可控的第三电压引入提取器，（4）估计实际的电子束能量通过感测发射极电流; 和（5）响应感测的发射极电流来调节第三电压。

3. 发明授权

US07542402B2 Contact probe storage FET sensor and write heater arrangements 有权
标题翻译：接触探头存储FET传感器和写加热器布置
公开(公告)号：US07542402B2
公开(公告)日：2009-06-02
申请号：US10827370
申请日：2004-04-20
申请人： Robert Guido Mejia , Richard Lee Hilton
发明人： Robert Guido Mejia , Richard Lee Hilton
IPC分类号： G11B7/00
CPC分类号： G11B9/14 , B82Y10/00 , G11B9/1409 , G11B11/08 , G11B11/16
摘要： A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever. A device which is associated with one of the cantilever and the medium is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever. A heater is disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data. A circuit electrically interconnects both of the device and the heater.
摘要翻译：用于接触探针存储装置等的读/写布置具有悬臂，其布置有可相对于悬臂运动的介质。与悬臂和介质中的一个相关联的装置被配置为响应介质和悬臂之间的距离变化引起的介质和悬臂之间的电场变化。加热器设置在悬臂上用于加热介质并且用于引起表示数据位的局部地形变化。电路将两个器件和加热器互连。

4. 发明授权

US07042783B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US07042783B2
公开(公告)日：2006-05-09
申请号：US10464216
申请日：2003-06-18
申请人： Richard Lee Hilton
发明人： Richard Lee Hilton
IPC分类号： G11C7/02 , G11C11/00 , G11C11/24 , G11C7/00
CPC分类号： G11C11/15 , G11C11/16
摘要： One embodiment of a magnetic memory includes a memory cell configured to provide a first state, and a sensing circuit. The sensing circuit is configured to charge a capacitor through the memory cell in the first state and discharge the capacitor through the memory cell in the first state to determine a state of the memory cell.
摘要翻译：磁存储器的一个实施例包括被配置为提供第一状态的存储单元和感测电路。感测电路被配置为在第一状态下通过存储器单元对电容器充电，并且在第一状态下通过存储单元放电电容器以确定存储器单元的状态。

5. 发明授权

US07460462B2 Contact probe storage fet sensor and write heater arrangements 失效
标题翻译：接触探头存储fet传感器和写加热器布置
公开(公告)号：US07460462B2
公开(公告)日：2008-12-02
申请号：US10736600
申请日：2003-12-17
申请人： Robert G. Mejia , Richard Lee Hilton
发明人： Robert G. Mejia , Richard Lee Hilton
IPC分类号： G11B11/00
CPC分类号： G11B9/14 , B82Y10/00 , G11B9/1409 , G11B11/08 , G11B11/16
摘要： A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever; a device associated with one of the cantilever and the medium which is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever; a heater disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data; and a circuit which electrically interconnects both of the device and the heater.
摘要翻译：用于接触探针存储装置等的读/写装置具有悬臂，其布置有可相对于悬臂运动的介质; 与所述悬臂和所述介质中的一个相关联的装置，其被配置为响应于由所述介质和所述悬臂之间的距离的变化引起的所述介质和所述悬臂之间的电场的变化; 设置在所述悬臂上用于加热所述介质并且用于引起表示数据位的局部地形变化的加热器; 以及将装置和加热器两者电连接的电路。

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