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    • 3. 发明授权
    • Ultracompact Q-switched microlasers and related method
    • 超微型Q开关微型激光器及相关方法
    • US5488619A
    • 1996-01-30
    • US319192
    • 1994-10-06
    • Hagop InjeyanTerry L. Holcomb
    • Hagop InjeyanTerry L. Holcomb
    • G02F1/015G02F1/37G02F1/39H01S3/06H01S3/0941H01S3/106H01S3/109H01S3/11H01S3/115H01S3/23H01S5/00H01S5/42
    • H01S3/0627H01S3/2383H01S3/025H01S3/0604H01S3/0941H01S3/1063H01S3/109H01S3/115H01S5/42
    • An ultracompact array of microlasers in which Q-switching is performed by intracavity electroabsorptive modulators, to provide an array of relatively high-power beams with good beam quality and other beam characteristics. The microlasers are optically pumped by light beams from an array of semiconductor diode lasers, each of which is individually controlled by a separate electrode. Light from the diode lasers is coupled directly into a slab of solid-state crystal material, such as Nd:YVO.sub.4 (neodymium:yttrium vanadate), in which laser action takes place. The solid state material in part defines an array of laser cavities and an array of individually controllable Q-switching elements is integrated into the cavities, permitting Q-switching of each of the array elements. The Q-switching elements are electroabsorptive modulators that permit extremely rapid switching of the microlaser elements and provide output pulses of relatively high peak powers.
    • 通过腔内电吸收调制器进行Q切换的微型激光器的超小型阵列,以提供具有良好光束质量和其他光束特性的相对高功率光束的阵列。 微型激光器由来自半导体二极管激光器阵列的光束光学泵浦,每个半导体激光器由单独的电极单独控制。 来自二极管激光器的光直接耦合到诸如Nd:YVO4(钕:钒酸钇)的固态晶体材料的板中,其中发生激光作用。 固体材料部分地限定了激光腔的阵列,并且可独立控制的Q开关元件的阵列集成到空腔中,从而允许每个阵列元件的Q开关。 Q开关元件是电吸收调制器,其允许微激光器元件的极快切换并提供具有相对较高峰值功率的输出脉冲。