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1. 发明授权

US4952839A Photoconductive device and method of operating the same 失效
标题翻译：光导元件及其操作方法
公开(公告)号：US4952839A
公开(公告)日：1990-08-28
申请号：US420773
申请日：1989-10-12
申请人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
IPC分类号： H01J29/45
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

2. 发明授权

US4888521A Photoconductive device and method of operating the same 失效
标题翻译：光导元件及其操作方法
公开(公告)号：US4888521A
公开(公告)日：1989-12-19
申请号：US69156
申请日：1987-07-02
申请人： Kenkichi Tanioka , Keiichi Shidara , Tatsuro Kawamura , Junichi Yamazaki , Eikyuu Hiruma , Kazuhisa Taketoshi , Shiro Suzuki , Takashi Yamashita , Mitsuo Kosugi , Yochizumi Ikeda , Masaaki Aiba , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Keiichi Shidara , Tatsuro Kawamura , Junichi Yamazaki , Eikyuu Hiruma , Kazuhisa Taketoshi , Shiro Suzuki , Takashi Yamashita , Mitsuo Kosugi , Yochizumi Ikeda , Masaaki Aiba , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01J31/38
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
摘要翻译：公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层。还公开了操作这种光电导器件的方法。通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

3. 发明授权

US5233265A Photoconductive imaging apparatus 失效
标题翻译：光电成像设备
公开(公告)号：US5233265A
公开(公告)日：1993-08-03
申请号：US561678
申请日：1990-08-01
申请人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi , Mitsuo Kosugi , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yoshizumi Ikeda , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Hirofumi Ogawa
发明人： Yukio Takasaki , Kazutaka Tsuji , Tatsuo Makishima , Tadaaki Hirai , Sachio Ishioka , Tatsuro Kawamura , Keiichi Shidara , Eikyu Hiruma , Kenkichi Tanioka , Junichi Yamazaki , Kenji Sameshima , Hirokazu Matsubara , Kazuhisa Taketoshi , Mitsuo Kosugi , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yoshizumi Ikeda , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01L31/0376 , H01L31/09 , H01L31/107 , H01L31/20
CPC分类号： H01J29/456 , H01L31/03765 , H01L31/095 , H01L31/107 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.
摘要翻译：公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层。还公开了操作这种光电导器件的方法。通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。在本发明的一个方面，非晶半导体层是非晶态Se。在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。

4. 发明授权

US4900975A Target of image pickup tube having an amorphous semiconductor laminate 失效
标题翻译：具有非晶半导体层叠体的图像拾取管的目标
公开(公告)号：US4900975A
公开(公告)日：1990-02-13
申请号：US67229
申请日：1987-06-29
申请人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
发明人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
IPC分类号： H01L31/08 , H01J29/45 , H01J31/38
CPC分类号： H01J29/456
摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.
摘要翻译：图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

5. 发明授权

US5568343A Circuit for protecting switching power source from overloads and shot circuits 失效
标题翻译：保护开关电源免受过载和射击电路的电路
公开(公告)号：US5568343A
公开(公告)日：1996-10-22
申请号：US325591
申请日：1994-10-19
申请人： Mitsuo Kosugi
发明人： Mitsuo Kosugi
IPC分类号： H02H7/12 , H02M3/28 , H02M3/335 , H03K17/082 , H02H7/04
CPC分类号： H02M1/32 , H02M3/33507 , H03K17/0822
摘要： A protective circuit is used in conjunction with a switching power source for protecting the latter from overload and from short circuits. It is detected whether the current at the primary winding current of a switching power source transformer, the load current of the switching power source, or both exceed predetermined reference voltages. If so, supply of power to the switching power source is interrupted for a predetermined period of time, thereby bringing the switching power source into inoperable condition in this duration.
摘要翻译：保护电路与开关电源结合使用，用于保护电路免于过载和短路。检测开关电源变压器的初级绕组电流的电流，开关电源的负载电流是否超过预定的参考电压。如果是这样，则将开关电源的电力供给中断预定的时间段，从而使开关电源在该持续时间内成为不可操作的状态。

6. 发明授权

US5548502A Push-pull, resonant type switching power supply circuit 失效
标题翻译：推挽式谐振型开关电源电路
公开(公告)号：US5548502A
公开(公告)日：1996-08-20
申请号：US297044
申请日：1994-08-29
申请人： Mitsuo Kosugi
发明人： Mitsuo Kosugi
IPC分类号： H02M3/28 , H02M3/337 , H02M3/335 , H02M7/538
CPC分类号： H02M3/337 , Y02B70/1433
摘要： To provide a resonant switching power supply switch with a simple structure and little noise, a push-pull resonant switching power supply circuit includes a transformer 104, a capacitor 105, two transistors 106a and 106b (bipolar transistors or field-effect transistors), and a bias circuit 201. The transformer 104 has a rectification circuit 340 connected to its secondary winding. The capacitor 105 forms a parallel resonant circuit in combination with the transformer 104. The transistors 106a and 106b are push-pull connected to the primary winding of the transformer 104 and the bases of which are connected to a feedback winding 104 of transformer. The bias circuit 201 applies a variable bias voltage to the base of the transistors.
摘要翻译：为了提供结构简单，噪声小的谐振开关电源开关，推挽谐振开关电源电路包括变压器104，电容器105，两个晶体管106a和106b（双极晶体管或场效应晶体管），以及偏置电路201.变压器104具有连接到其次级绕组的整流电路340。电容器105与变压器104组合形成并联谐振电路。晶体管106a和106b被推挽连接到变压器104的初级绕组，其基极连接到变压器的反馈绕组104。偏置电路201将可变偏置电压施加到晶体管的基极。

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