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    • 2. 发明授权
    • Thin-film magnetic head having magnetic layer with non-magnetic portion
    • 具有非磁性部分的磁性层的薄膜磁头
    • US07817376B2
    • 2010-10-19
    • US11738686
    • 2007-04-23
    • Hiraku HirabayashiKenkichi Anagawa
    • Hiraku HirabayashiKenkichi Anagawa
    • G11B5/127G11B5/147
    • G11B5/3116G11B5/1872G11B5/314
    • Provided is a thin-film magnetic head capable of suppressing ATE while ensuring sufficient controllability of the magnetic pole width and sufficient write field intensity. The head includes an electromagnetic coil element comprising: upper and lower magnetic layers; a write gap layer; and a write coil layer, the lower magnetic layer comprising: a lower yoke layer, a non-magnetic portion formed on an end portion on the ABS side of the lower yoke layer and extending to a head end surface on the ABS side; and a lower magnetic pole layer, an upper surface of the lower magnetic pole layer being in contact with the write gap layer, and an end surface in the head end surface of the lower magnetic pole layer having a shape whose width along a track width direction is defined by a predetermined magnetic pole width.
    • 提供一种能够抑制ATE的薄膜磁头,同时确保磁极宽度的足够可控性和足够的写入场强度。 头部包括电磁线圈元件,包括:上和下磁性层; 写间隙层; 以及写入线圈层,所述下磁性层包括:下磁轭层,形成在所述下轭铁层的ABS侧的端部上并延伸到所述ABS侧的头端面的非磁性部; 和下磁极层,下磁极层的上表面与写间隙层接触,下磁极层的头端面的端面具有沿着磁道宽度方向的宽度的形状 由预定的磁极宽度限定。
    • 3. 发明授权
    • Thin-film magnetic head having laminate shields for tolerating external magnetic field
    • 具有用于耐受外部磁场的层压屏蔽的薄膜磁头
    • US07813085B2
    • 2010-10-12
    • US11694310
    • 2007-03-30
    • Kenkichi AnagawaHiraku Hirabayashi
    • Kenkichi AnagawaHiraku Hirabayashi
    • G11B5/17
    • G11B5/3146G11B5/11G11B5/1278G11B5/3116G11B5/3912
    • A thin-film magnetic head having an MR element in which the tolerance of external magnetic field is improved even under the condition that shields have smaller areas. The head includes: an MR element includes lower and upper shield layers provided so as to sandwich an MR multilayer, one of edges of each of the layers reaching a head end surface on an ABS side; and an electromagnetic transducer including main and auxiliary magnetic pole layers, one of edges of each of the layers reaching the head end surface, wherein at least one laminate shield layer for tolerating an external magnetic field is provided adjacently on one side or on both sides in a track width direction of at least one layer out of the upper and lower shield layers and the auxiliary magnetic pole layer, and one edge of the at least one laminate shield layer reaching the head end surface.
    • 具有MR元件的薄膜磁头,其中即使在屏蔽具有较小面积的条件下,外部磁场的公差也得到改善。 磁头包括:MR元件包括设置成夹着MR多层的下屏蔽层和上屏蔽层,每层的一个边缘到达ABS侧的头端表面; 以及电磁换能器,其包括主磁极层和辅助磁极层,每个层的边缘中的一个到达头端表面,其中至少一个用于容忍外部磁场的层压屏蔽层相邻地设置在一侧或两侧 上下屏蔽层和辅助磁极层中的至少一层的磁道宽度方向,以及至少一层叠屏蔽层的一个边缘到达磁头端面。
    • 4. 发明申请
    • THIN-FILM MAGNETIC HEAD HAVING LAMINATE SHIELDS FOR TOLERATING EXTERNAL MAGNETIC FIELD
    • 具有外延磁场的层压板的薄膜磁头
    • US20080239584A1
    • 2008-10-02
    • US11694310
    • 2007-03-30
    • Kenkichi ANAGAWAHiraku Hirabayashi
    • Kenkichi ANAGAWAHiraku Hirabayashi
    • G11B5/33
    • G11B5/3146G11B5/11G11B5/1278G11B5/3116G11B5/3912
    • Provided is a thin-film magnetic head having an MR element in which the tolerance of external magnetic field is improved even under the condition that shields have smaller areas. The head comprises: an MR element comprising lower and upper shield layers provided so as to sandwich an MR multilayer, one edges of the layers reaching a head end surface on an ABS side; and an electromagnetic transducer comprising main and auxiliary magnetic pole layers, one edges of the layers reaching the head end surface, wherein at least one laminate shield layer for tolerating external magnetic field is provided adjacently on one side or on both sides in a track width direction of at least one layer out of the upper and lower shield layers and the auxiliary magnetic pole layer, and one edge of the at least one laminate shield layer reaching the head end surface.
    • 提供一种具有MR元件的薄膜磁头,其中即使在屏蔽具有较小面积的条件下,外部磁场的公差也得到改善。 头包括:MR元件,包括设置成夹住MR多层的下屏蔽层和上屏蔽层,所述层的一个边缘到达ABS侧上的头端表面; 以及包括主磁极层和辅助磁极层的电磁换能器,所述层的一个边缘到达所述头端面,其中,在轨道宽度方向的一侧或两侧相邻地设置有用于容纳外部磁场的至少一个层叠屏蔽层 的上下屏蔽层和辅助磁极层中的至少一层,并且至少一层压屏蔽层的一个边缘到达头端表面。
    • 5. 发明授权
    • Magnetic sensor having magneto-resistive elements on a substrate
    • 磁传感器在基片上具有磁阻元件
    • US08451003B2
    • 2013-05-28
    • US12844091
    • 2010-07-27
    • Hiroshi YamazakiHiraku HirabayashiNaoki Ohta
    • Hiroshi YamazakiHiraku HirabayashiNaoki Ohta
    • G01R33/09
    • G01R33/091G01D5/145
    • A magnetic sensor having first to fourth magneto-resistive elements, where the first and second magneto-resistive elements are connected at respective ends through a first connecting portion in a central region, and the third and fourth magneto-resistive elements are connected at respective ends through a second connecting portion that is parallel to the first connecting portion. The first and fourth magneto-resistive elements are connected at respective other ends through a third connecting portion, and the second and third magneto-resistive elements are connected at respective other ends through a fourth connecting portion. Depending on an external signal magnetic field, resistance values of the first and third magneto-resistive elements change in a same increasing or decreasing direction, whereas resistance values of the second and fourth magneto-resistive elements change in an increasing or decreasing direction opposite to the direction of the first and third magneto-resistive elements.
    • 一种具有第一至第四磁阻元件的磁传感器,其中第一和第二磁阻元件通过中心区域中的第一连接部分在各自的端部连接,第三和第四磁阻元件在各自的端部连接 通过与第一连接部分平行的第二连接部分。 第一和第四磁阻元件在相应的另一端通过第三连接部连接,并且第二和第三磁阻元件通过第四连接部在相应的另一端连接。 取决于外部信号磁场,第一和第三磁阻元件的电阻值以相同的增加或减小的方向变化,而第二和第四磁阻元件的电阻值在与 第一和第三磁阻元件的方向。
    • 7. 发明申请
    • Magnetic Sensor
    • 磁传感器
    • US20110031965A1
    • 2011-02-10
    • US12816725
    • 2010-06-16
    • Shunji SARUKIHiraku Hirabayashi
    • Shunji SARUKIHiraku Hirabayashi
    • G01B7/30
    • G01D3/036G01D5/24476
    • A magnetic sensor includes a first detection unit and a second detection unit. The first detection unit calculates a first detection angle which is a detected value of a first angle that a direction of an external magnetic field in a first position forms with respect to a first direction. The second detection unit calculates a second detection angle which is a detected value of a second angle that the direction of the external magnetic field in a second position forms with respect to a second direction. The first detection angle includes a first angular error. The second detection angle includes a second angular error. The first angular error and the second angular error differ in phase by an odd number of times ½ of the error period.
    • 磁传感器包括第一检测单元和第二检测单元。 第一检测单元计算作为相对于第一方向形成第一位置的外部磁场的方向的第一角度的检测值的第一检测角度。 第二检测单元计算作为相对于第二方向形成第二位置的外部磁场的方向的第二角度的检测值的第二检测角度。 第一检测角度包括第一角度误差。 第二检测角度包括第二角度误差。 第一个角度误差和第二个角度误差的相位差异为误差周期的1/2倍。
    • 8. 发明申请
    • MAGNETIC SENSOR INCLUDING A BRIDGE CIRCUIT
    • 磁传感器包括一个桥接电路
    • US20110025319A1
    • 2011-02-03
    • US12841501
    • 2010-07-22
    • Shunji SARUKIHiraku Hirabayashi
    • Shunji SARUKIHiraku Hirabayashi
    • G01R33/02
    • G01R33/0029G01R33/091
    • A magnetic sensor includes a bridge circuit with a first, a second, a third, and a fourth resistor annularly and electrically connected together in this order, and a compensation resistor. The compensation resistor is connected to a first point between the fourth resistor and the first resistor. The first to fourth resistors include a first to fourth tunnel magneto-resistance element, respectively. Each of the magnetization directions in the magnetization fixed layers in the second and fourth magneto resistance elements is opposite to the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The magnetization direction in the magnetization fixed layer in the third magneto resistance element is the same as the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The resistance of the compensation resistor varies with a period of 180 degrees with respect to a rotation angle of the external field.
    • 磁传感器包括具有依次环形并电连接在一起的第一,第二,第三和第四电阻器的桥式电路和补偿电阻器。 补偿电阻器连接到第四电阻器和第一电阻器之间的第一点。 第一至第四电阻器分别包括第一至第四隧道磁阻元件。 第二和第四磁阻元件中的磁化固定层中的每个磁化方向与第一磁阻元件中的磁化固定层中的磁化方向相反。 第三磁阻元件的磁化固定层的磁化方向与第一磁阻元件的磁化固定层的磁化方向相同。 补偿电阻的电阻相对于外部场的旋转角度为180度的周期而变化。
    • 9. 发明授权
    • Method of producing thin film magnetic head
    • 制造薄膜磁头的方法
    • US07828985B2
    • 2010-11-09
    • US11892773
    • 2007-08-27
    • Yuji ItoHiraku HirabayashiYoshiyuki MizoguchiNobuya Oyama
    • Yuji ItoHiraku HirabayashiYoshiyuki MizoguchiNobuya Oyama
    • C23F1/00B44C1/22H01L21/00H01L21/302
    • G11B5/3163G11B5/00826
    • A method of producing a thin film magnetic head includes the steps of: forming a second lower magnetic pole layer in a part on a first lower magnetic pole layer; forming, over the entire wafer surface, an insulating layer so as to be thicker than the thickness of the second lower magnetic pole layer in the stacking direction, the insulating layer being less likely to be etched than the second lower magnetic pole layer; carrying out a planarizing process by CMP on the entire wafer surface until the second lower magnetic pole layer is exposed; forming a concave portion including the second lower magnetic pole layer and the insulating layer by ion beam etching on the entire wafer surface; forming a recording gap layer over the entire wafer surface; and forming a first upper magnetic pole layer in the upper magnetic pole layer so as to fill the concave portion.
    • 一种制造薄膜磁头的方法包括以下步骤:在第一下磁极层的一部分上形成第二下磁极层; 在整个晶片表面上形成绝缘层,以便比层叠方向上的第二下磁极层的厚度厚,绝缘层比第二下磁极层更不易蚀刻; 在整个晶片表面上通过CMP进行平坦化处理,直到第二下磁极层露出; 在整个晶片表面上通过离子束蚀刻形成包括第二下磁极层和绝缘层的凹部; 在整个晶片表面上形成记录间隙层; 以及在所述上磁极层中形成第一上磁极层以填充所述凹部。